共查询到20条相似文献,搜索用时 312 毫秒
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MEMS毫米波滤波器的设计与制作 总被引:1,自引:1,他引:0
开展了一种基于MEMS工艺的毫米波带通滤波器结构设计和工艺实现,该滤波器结构采用高阻硅作为衬底材料的薄膜支撑结构,选用平行耦合滤波器形式,使用HFSS分析软件对该结构进行了模拟仿真。设计了中心频率为35.0GHz、带内损耗为2.2dB、30dB抑制带宽为2.2GHz的MEMS毫米波滤波器。给出了一套能降低毫米波损耗的MEMS毫米波带通滤波器工艺流程方案,并针对该工艺流程方案进行了关键参数的工艺误差仿真,实现了MEMS毫米波滤波器的工艺制作和测试。测试结果表明,获得的毫米波滤波器的测试结果与仿真结果比较接近。 相似文献
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根据Bore提出的一种MEMS薄膜断裂强度静电测试结构,给出了一种改进的数学模型,根据此数学模型可以很简单地测出MEMS薄膜的断裂强度.对各种不同尺寸的结构用Coventor软件对所给模型进行了验证,结果表明所得出的数学模型比原文中所给出的数学模型更为准确. 相似文献
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MEMS薄膜纵向断裂强度的静电测试结构模型与模拟 总被引:8,自引:2,他引:6
根据Bore提出的一种MEMS薄膜断裂强度静电测试结构,给出了一种改进的数学模型,根据此数学模型可以很简单地测出MEMS薄膜的断裂强度.对各种不同尺寸的结构用Coventor软件对所给模型进行了验证,结果表明所得出的数学模型比原文中所给出的数学模型更为准确 相似文献
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用反应磁控溅射方法在SiO2/Si(100)衬底和Cu薄膜间溅射一层TaN阻挡层,测试不同N气分压及热处理温度下Cu/TaN/SiO2/Si薄膜的显微结构和电阻特性.同时利用微细加工技术加工了镂空的Cu互连叉指测试结构,研究了TaN薄膜在镂空的铜互连结构中的扩散阻挡性能.结果发现,在退火温度不超过400 ℃时,薄膜电阻率均低于80μΩ·cm,而当溅射N分压超过10%,退火温度超过400℃时,薄膜电阻率很快上升.低N气分压下(≤10%)溅射时,即使退火温度达到600 ℃,薄膜电阻基本不变. 相似文献
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《Microelectronics Journal》2007,38(8-9):888-893
This paper describes a novel processing technique for the fabrication of polymer-derived silicone carbonitride (SiCN) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was crosslinked using hot isostatic pressure at 400 °C and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over 1400 °C were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics including shear strength (15.2 N), insulation resistance (2.163×1014 Ω cm), and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers. 相似文献
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Olivier Perroud Renaud Vayrette Olivier Thomas Olivier Ulrich 《Microelectronic Engineering》2010,87(3):394-397
The mechanical properties of simple metals in small dimensions have been the objects of many studies. Average stress measurements clearly show that yield stress increases significantly when the size decreases but local strain measurements indicate considerable grain-to-grain and intra-grain strain variations. The link between the macroscopic behaviour of microstructures and the corresponding local processes is still difficult to analyse.Copper is used in advanced microelectronic interconnects and the mechanical properties of narrow interconnects is a key issue for the reliability of devices. Average strain measurements performed on line arrays show a drastically different behaviour in narrow lines as compared with wide lines. ST microelectronics in Rousset developed a MEMS sensor integrated in the damascene process to follow the stress after processing. This microsystem can be a very efficient tool to monitor the average stress in interconnects on the chip. The gradient of strain in interconnects may lead to failures from void and hillocks and local stress repartition can be obtained through X-ray microdiffraction. Laue microdiffration is a unique non-destructive method to investigate the strain grain-by-grain in microstructures. The diffraction patterns were obtained at ESRF on BM32 beam line. We present the first steps of the investigation of a MEMS investigated by Laue microdiffraction. The sub-micron X-ray-beam allows a mapping of the microstructure with a step of around 1 μm, which is also the value of the estimated grain size. We present results on the orientation and stress at a sub-micron scale obtained from the Laue-diffraction measurements on the MEMS. 相似文献
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许多高性能微传感器和微执行器的实现都离不开高灵敏度的薄膜。使用微机械加工方法制备的薄膜一般有着不可忽视的残余应力。残余应力极大地降低了膜的机械灵敏度。文中提出的纹膜结构 ,可在不改变工艺条件的前提下 ,显著地降低残余应力的不良影响 ,大幅度增加膜的灵敏度。理论分析的结果表明 ,纹膜几何参数的设计是提高灵敏度的关键。文中提出了一种简单实用的纹膜制造工艺 ,并结合此工艺设计出若干实际的结构 ,利用有限元分析 (FEA)工具对结构进行了进一步的模拟和优化 ,得到了各项设计参数的最优值。优化后纹膜的灵敏度较平膜提高了一个数量级 ,可用于各种高性能 MEMS器件的制作 相似文献
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Micro and nano structures of carbonised polymers resulting from the pyrolytic transformation of polymer structures are presented. Polymers have become increasingly popular as materials for micro/nano electromechanical systems (MEMS/NEMS), especially for chemical or biological application. Focus is on the transformation of polymer structures into carbonised structures using a pyrolysis process. Combination of this pyrolysis process with conventional MEMS/NEMS fabrication technology could provide various fine structures of carbonised polymer. Carbonised polymers have advantages over conventional carbon materials, with respect to compatibility with MEMS, because they can be transformed directly from a polymer structure. Three-dimensional micro and nano free-standing structures of carbonised polymer as typical MEMS/NEMS structures are reported. Micro molding process is used to demonstrate a unique polymer structure to be pyrolysed. Furthermore, EB lithography technology is employed for the patterning of polymers in addition to UV photolithography which is used by previous researches. A 100 nm wide bridge structure is designed as nano structures. In addition, the presented structures of carbonised polymer are expected to be applied to micro and nano functional devices such as electrochemical sensors by making the best use of their carbon-like features 相似文献
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微机电系统(MEMS)封装残余应力是在封装工艺过程中芯片上产生的残余应力,它对于MEMS器件的热稳定性和长期贮存稳定性有着十分重大的影响,故而对MEMS封装残余应力的高精确度测量有利于封装应力的研究。由于封装残余应力十分微小,因此无法利用目前的测量手段直接测量封装应力,本文针对这个问题提出了一种基于应力放大结构和拉曼光谱法的封装应力测量方法,可以测量出MEMS器件中封装应力的平均水平。基于理论分析建立了原始封装模型与应力放大结构之间的放大关系,并提出应力放大结构的设计原则。接着采用3D有限元(FEM)仿真对一款高精确度MEMS微加速度计的封装应力测量进行了分析,其结果与理论分析具有很高吻合度。最后,针对该微加速度计的封装应力测量,成功制作了应力放大结构的芯片样片,并进行封装,随后拉曼光谱法被用于测量样片中的最大应力,进而计算出待测微加速度计中平均封装应力大小。实验结果与仿真分析具有很好的吻合度,证明本文所提出的测量方法具有相当的可靠性。 相似文献
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