动态蚁群算法用于洪灾搜救问题

蚁群算法是一种求解最优路径的常用算法,其利用自然界中蚁群的活动规律和正反馈原理。动态的蚁群算法针对基本蚁群算法存在的问题和缺点进行改进,采用动态参数因子,可以有效避免搜索的局部最优和进化停滞现象,并且能够提高搜索效率。通过实验结果对比,该算法在求解最短路径方面具有更高的精确度,为今后的搜救问题提供了一种高效实用的参考方法。     

基于蚁群算法的图像边缘提取技术

蚁群算法是根据真实蚁群的觅食原理提出的一种新兴的启发式智能搜索算法.本文将蚁群算法应用于图像边缘搜索提取中,通过蚂蚁的智能特征,自适应的调整自己的行为,对图像边缘进行搜索提取.同时,引入了"精英蚂蚁"的概念,将精英蚂蚁的概念与蚁群算法想结合,优化了搜索过程,并提高了搜索速度.     

基于改进蚁群算法和互信息的多光谱图像的配准

基于互信息的配准算法有精度高,自动化程度高,不需要对图像进行预处理等优点,已经被大量应用于多光谱图像配准中.但是在计算互信息时,出现了很多局部极值,这就为目标函数的寻优过程带来了很大的困难.提出了一种基于蚁群算法的配准参数寻优方法,改进蚂蚁在每层节点间的转移准则以及全局信息素的更新策略.实验证明,此方法不需要人工干预,对参数的初始值没有依赖性,配准成功率高.     

蚁群算法和Powell法结合的多分辨率三维图像配准

基于互信息的配准方法具有精度高,鲁棒性强的特点,成为近年来图像配准研究的热点.但基于互信息的目标函数存在许多局部极值,为配准的优化过程带来了很大的困难.该文提出了一种蚁群算法和Powell法相结合的多分辨率搜索优化算法.该算法以互信息作为相似性测度,采用基于小波变换的多分辨率策略,将蚁群算法与Powell法结合起来对三维的CT,MR图像进行了配准.实验结果表明,这种方法能够有效地克服互信息函数的局部极值,大大地提高了配准精度,达到亚像素级.     

蚁群算法在PID控制中的应用及其参数影响

鉴于传统PID参数整定方法的不足,提出了一种采用蚁群算法优化选取PID控制参数的方法。通过建立数学模型将PID控制参数选择问题抽象成路径选择问题,从而将蚁群算法成功的应用于PID参数优选,并对寻优过程进行了仿真。将结果与常用的临界比例度法整定的结果进行了比较,发现基于蚁群算法的PID参数优选方案可使系统超调量大幅减小,并明显缩短系统调节时间,具有良好的应用前景。此外,讨论了蚁群算法中的关键参数对算法性能的影响,对比了不同参数下算法的收敛速度和求解质量。     

基于混沌搜索的蚁群优化算法

文中算法将蚁群算法与混沌搜索相结合,蚁群算法陷入局部最优时,利用混沌搜索对局部最优解进行二次寻优;对二次寻优结果再重复利用蚁群算法,扩大了搜索范围,避免了算法易陷入局部最优的特点。最后通过三个TSP问题进行实验对比,结果表明基于混沌搜索的蚁群算法充分利用了混沌搜索的随机性和蚁群算法的并行性,在收敛性和优化性方面得到了提高。     

基于蚁群算法的景象匹配定位

景象匹配定位是精确制导的重要技术,通过对景象匹配定位和蚁群算法的研究,提出一种基于蚁群算法的匹配定位方法,蚁群算法具有快速全局寻优能力,应用蚁群算法计算模版图像在基准图像中的匹配位置,根据匹配定位参数的特点,建立二维的蚁群搜索空间,定义图像的归一化积相关作为相似性度量并更新蚁群的信息素,利用信息素及启发信息来计算状态转移概率,蚁群最终聚集到适应度函数最大的路径上。实验结果表明：蚁群算法可以准确有效地估计匹配位置。     

基于遗传因子的自适应蚁群算法最优PID控制

蚁群算法是一种新型的模拟进化算法,重点始于组合优化问题的求解.作者运用该算法优化PID控制参数,但在基本蚁群算法中,存在收敛速度较慢,易出现停滞,以及全局搜索能力较低的缺陷.论文提出了一种具有遗传因子的自适应蚁群算法最优PID控制参数的方法,设计出参数优化图.该方法克服了基本蚁群算法的不足,能够满意地实现PID控制参数优化.仿真结果与Z-N法、遗传算法、基本蚁群算法相比较,优化效果明显得到改善.实验表明,该方法对于控制其他对象和过程也具有应用价值.     

侧抑制在红外噪声图像配准中应用

图像特征配准主要使用边缘,而红外图像边缘呈渐变性,且信噪比低.首先提出了使用非循环侧抑制网络对图像进行增强处理,并改善了侧抑制模板系数矩阵,提高了红外图像信噪比.其次对使用欧氏距离进行相似度度量函数进行了改进,最后使用了蚁群算法对配准参数寻优.仿真试验表明了算法的有效性.     

基于SIFT的超大图像配准

SIFT算法在仿射变换、噪声、一定程度的光照条件下具有良好的匹配性能，星上宽波段相机成像尺寸都非常大，超大尺寸图像直接利用SIFT算法，在构建高斯金字塔时空间占用大，同时导致计算用时长。通过研究仿射变换矩阵，提出可以通过计算超大尺寸图像的降采样图像之间的配准系数间接获取超大尺寸图像的配准系数的方法。经过实验验证，具有一定的可行性，对于图像配准从空间上减少计算量从而节约计算时间具有一定指导意义。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its