电子束纵向泵浦准分子激光器

本文描述一电子束纵向泵浦准分子激光器。分析了螺旋管产生的磁场和它对电子束的影响。用 CVR 和探针线圈研究了磁场,用法拉弟探头和重氮化铬薄膜检测了电子束的位置和空间 FWHM 值。测量了整个电子束的能量。得到了可调谐 XeF(C→A)激光输出。     

测量摄象管分辨率用的RCA P-200型测试卡

为消除测试电视摄象管分辨率过程中许多可变因素,研制了RCA P-200型测试卡.用这种测试卡测量分辨率,与视频放大器的频率响应无关,而且消除了信号变化或亮度变化对测量的影响.该测试卡便于电子束聚焦,以确保象散最小,而且可分析最好聚焦情况下电子光学系统存在的象散.利用带有这种测试卡的窄频带视频放大器的响应特性,可大大地降低噪声和提高测量的精确废.P-200型测试卡也可用来精确测量高分辨率管予的分辨率.     

半导体器件物理量的测定

一、引言 扫描电子显微镜的电子束感生电流技术广泛地用于测量半导体的物理量。本文主要介绍利用这种电子束感生电流信息确定PN结的位置,测量平面器件PN结的结深,测量半导体表面载流子的复合速度,确定材料局部区域少数载流子的扩散长度和寿命,测量PN结的耗尽区宽度,研究PN结耗尽区宽度与偏置电压的关系。由于它是一种近年来最新的技术,其原理是基于电子束与固体的相互作用,这种相互作用过程直接反应了半导体的结构和特性,因而可以用它进行半导体材料研究,半导体器件新机理的研究,表面科学的研究以及半导体器件可靠性的研究。为推广这种技术的应用,提高半导体器件水平,我们向读者介绍一下这种电子束技术,报告我们的研究成果。     

BPM 技术用于环形电子束位置测量的可行性分析

为了对传输管道半径24mm,电子束半径19mm,厚度3mm 的环形电子束位置开展非阻拦测量,选择了BPM 技 术方案。对比研究了真空管道中环形电子束与位于束团中心的实心束在管道壁上产生的场分布,证明BPM 测量技术可以 用于电流密度均匀分布的环形电子束。采用点密度不均匀性模型,分析了环形电子束角向不均匀性对测量精度的影响。 结果显示,当环形电子束电流密度不均匀性应为10%时,对位置分辨率精度的影响为0.1mm。     

300kV脉冲冷阴极电子束发生器研究

设计和研制了一台由五级马克斯(Marx)发生器驱动的总电压为295kV,最大贮能为817焦耳,束面积为5×30cm~2的横向冷阴极电子束发生器。用电压分压器,罗果斯基环(Rogowski coil)及法拉弟杯(Faraday cup)分别测定了脉冲电压、电流及电子束波形。用热电堆—铝板量热计测量了电子束窗口外的总能量,考察了电子束能量在大气中随射向距离的衰减变化及在兰玻璃纸上的相对能量沉积,电子束脉宽约为0.36μs,峰值电流密度为23A/cm~2,输出总能量为152焦耳,电子束发生器能量效率为18.6％。     

调制传递函数

§1.电子束管分辨率测量的方法 无论那种电子束管,都希望屏面或靶面上的光点越细越好,显示器件的光点足够细,才能显示一幅清晰的图象。象管的光点足够细才能传送一幅清晰的图象。在电子束管中,用分辨率来表征管子显示或传送图象细节的能力。分辨率的测量,通常采用压缩光栅法和测试卡法。     

溅射GaAs SOI电子束退火再结晶及MBE GaAs SOI高频感应石墨棒热退火再结晶

本文首次报道了溅射GaAs SOI电子束退火再结晶以及MBE GaAs SOI高频感应石墨棒热退火再结晶.对实验所得SOI样品,用ED和TEM分析GaAs 薄膜的结晶性,用X-射线衍射测量薄膜表面的择优取向,用霍耳效应测量定出载流子浓度和迁移率.     

注砷硅单晶的电子束退火

本文报道使用DT—1型电子束退火机对注砷单晶硅进行扫描电子束退火的实验研究。试验了电子束退火各种条件对结果的影响,以便选择较适宜的退火条件。用背散射法和微分电导法分别测得了未退火和经退火样品的杂质浓度分布和载流子浓度分布,显示出电子束退火的杂质再分布状况,并计算出注入砷的电激活率。此外,还进行了范德堡法霍耳效应测量,得到注入层的平均载流子浓度、平均迁移率和薄层载流子浓度。电子束退火样品与热退火样品作了比较。     

彩色显像管电子束配列智能测试系统研制

通过使用CCD采集电子束图像,来测试电子束着屏误差、电子束宽度、电子束配列因子、黑底配列因子和黑底条宽等五个参数,本系统由计算机作为控制核心,通过专用软件进行实时测量,大大提高了测试效率,实现多参数、全自动测量。针对系统研制过程中的核心问题,文中主要对系统聚焦和图像处理部分进行了讨论。     

SEM中用表面电子束激励势法研究半导体特性

本文考虑用一种新的非接触法来研究和测量半导体晶体微区特性的方法,这种方法是基于扫描电镜中控测半导体的表面电子束激励电势(SEBIV)法来研究半导体的电物现特性和测量半导体电物现参数。本文讨论了一种测量半导体晶体的非平衡载流子的扩散长度L和寿命τ的方法。本文还讨论了用本方法可观测到的表面电子束激励电势图像衬度的形成和它与扫描方向、半导体材料的物理特性和表面激励电势极性的关系。SEBIV法是一种非接触而且非常有效的观测和研究半导体晶体中活性非平衡载流子电特性的方法,这种方法有下列特点:1测量时不需要与样品直接接…     

Nanostructure patterning

Research at the US Naval Research Laboratory (NRL) in the lithography, patterning, and fabrication of structures of nanometer scale dimensions is reviewed. Electron-beam (e-beam) lithography at high (50 keV) and low (5 eV) energies on resist systems developed at NRL is described. The low energy lithography takes advantage of the spatially confined e-beam available in a scanning tunneling microscope type probe. This instrument allows an in situ exposure and characterization of an e-beam sensitive material. A novel approach for implementing dose correction for proximity effects in e-beam lithography is presented using an error measure based on the physical realities of lithography. The compositional disordering of GaAs-Ga_xAl_1-xAs heterostructures as a technique for pattern replication is described. Introducing silicon into the heterostructure (by implantation or diffusion) enhances the aluminum and gallium interdiffusion which can be used for patterning. A complete bibliography of recently published results is included     

Fabrication of nanometer metal structures by a combination of techniques of metal evaporation and E-beam nanolithography

A simple but effective technique is described in which a multiple strand filament source for thermal evaporation of metals is used in conjunction with e-beam nanolithography. It is capable of fabricating nanometer metal structures with dimensions smaller than the resist opening by e-beam nanolithography. Preliminary results presented in this paper illustrate that this technique can be extended to dimensions which are beyond the present resolution limit (∼ 15-20nm), achievable with e-beam lithography and positive polymer resist. The pattern generation capability of e-beam nanolithography is extended to the fabrication of complex and high-density nanometer structures with dimensions ∼ 10 nm or less.     

消除产品良率隐藏的杀手--电子束检查是铜逻辑和晶圆代工厂的最佳方法

监控和消除隐藏的电路缺陷已成为130nm和130nm以下器件的关键。这使得电子束检查正在广泛应用于开发、试生产和量产的监控过程。我们将描述当前铜逻辑和晶圆代工厂电子束检查技术的执行情况,其中包括详细的案例研究,它说明了从开发到量产过程中应用电子束检查技术的好处。我们也描述了过去克服通用工具障碍的方法。然后,分别介绍了利用电子束检查技术的新进展,以及为假设的20000WSPMφ300mm工厂模拟的最理想执行情况的最佳实例。     

Integration and control

In the Semiconductor 2003 meeting in Edinburgh in June, the prime message for the compound sector from both Bookham’s Andy Carter and Intense Photonics’ John Marsh was ‘integration.’ From Prof Gabriel Aeppli of University College London, the nano technology message was that μ-scale electronics is already a working science; revolutionised by scan probe microscopy and e-beam litho, it cannot be distinguished from modern materials science; but the trick will be in ‘learning to control it.’     

Radiation effects of e-beam fabricated submicron NMOS transistors

This paper reports radiation effects of submicron NMOS devices fabricated by e-beam lithography. This study was initiated because e-beam lithography creates neutral traps in the gate oxides of MOS devices, which may make these devices more sensitive to radiation. Indeed, we have found that for radiation doses above 10 Krad, the threshold shift for an e-beam fabricated device is twice that for the corresponding device made by optical lithography. However, with the submicron process used here the threshold shift for both types of device is quite low (<100mV below 10 Krad), Moreover, there was no correlation observed between radiation sensitivity and device gate length.     

小型毫微秒电子束发生器

本文描述了一个小型的、适合于激光动力学研究的毫微秒电子束发生器。它的高压脉冲电源是自制的螺旋发生器。在直径为6毫米的电子枪窗口后测得电子束峰值电流为7安,脉冲的半峰宽为6～8毫微秒,最大电子能量约为107千电子伏特。     

The lock-on effect in electron-beam-controlled gallium arsenideswitches

The authors analyze the lock-on effect, which is the inability of photoconductive or electron-beam-controlled semiconductor switches to recover to their initial hold-off voltages following the application of the laser or electron-beam pulse, if the applied voltage exceeds a certain value. For GaAs this threshold voltage corresponds to average electric fields in the range from 4 to 12 kV/cm. Experimental results on semi-insulating GaAs switches indicate that the corresponding lock-on current after e-beam irradiation is identical with the steady-state dark current. The highly resistive state of the switch before e-beam irradiation is shown to be a transient phase towards the much lower steady-state dark resistance, with a duration which depends on the impurity content of the switch material and the applied voltage. The irradiation of the GaAs samples with electrons or photons causes an acceleration of this temporal evolution; at sufficiently high laser or e-beam intensities, lock-on of the dark current after termination of the driving ionization source is observed. Based on the experimental results, a model is developed which describes the lock-on effect in terms of double injection and carrier trapping in deep intraband levels. The model explains the major characteristics of the lock-up effects and is supported by the qualitative agreement of the calculated current-voltage curves with the experimental data     

Improved properties of Al-doped ZnO film by electron beam evaporation technique

High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10⁻⁴ Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.     

MCC8: Throughput enhancement of EB direct writer

To obtain higher throughput of more than 5 wafer per hour (WPH), authors propose a high throughput 50 kV e-beam direct writer MCC8 that has eight column. MCC8 has multi column cell (MCC), character projection (CP) with design for e-beam (DFEB) and high current density technologies. Proof-of-concept evaluations for combination between MCC and CP have finished in the MASK-D2I project of ASET, including mix-and-match overlay results of better than 5 nm. By the combination of these proven technologies, MCC8 realizes a throughput of 5 WPH. Furthermore, over 30 WPH can be realized by clustering six MCC8s together.