支持终端一致性测试的TD-SCDMA协议测试平台的构建

本文介绍了协议一致性测试基本理论,提出了一种TD-SCDMA终端协议一致性测试平台的构建方法,描述了该平台的功能、框架结构和实现方法,并举例说明对该测试平台如何使用TTCN实现一致性测试和模拟网络基本功能.     

WiMAX认证协议一致性测试的内容与方法

对WiMAX认证协议一致性测试作了较全面的介绍.首先介绍了协议一致性测试的意义,然后讲述了WiMAX协议一致性测试所包含的主要内容和测试平台,最后对WiMAX认证协议一致性测试的现状做了分析.     

DMR空中接口协议一致性测试技术的研究

文章介绍了DHR的产生、发展以及DMR协议体系结构。基于协议一致性测试的基本概念,划分出了DHR协议一致性测试集,分析了一种特定的DMR一致性测试系统,对基站DLL层的一致性测试进行了具体的分析和研究。     

TD-SCDMA移动终端协议一致性测试技术的研究

根据我国基于TD-SCDMA技术的第三代移动通信系统的发展战略,提出TD-SCDMA移动终端协议一致性测试技术的研究.着重介绍了一致性测试的原理,TD-SCDMA移动终端协议一致性测试的方法,测试系统的设计和实现,抽象测试集的生成.通过对该项技术的研究,可为TD-SCDMA移动终端设备提供标准的、实用的协议一致性测试方法和工具,以解决接入网络时产生的协议非一致性问题.     

基于WIA-PA协议的网关一致性测试系统的设计

一致性测试系统是进行协议一致性测试的基础。本文主要介绍了一种基于WIA-PA协议的网关一致性测试系统,并对测试系统的拓扑结构和测试过程的设计进行了说明。     

安立GCF和一致性测试方案

一致性测试是业内对 W C D M A 移动终端在商用之前的一个非常重要的测试,也是运营商、手机厂家等非常关注的一项测试内容。各种移动通信协议标准　(例如GSM、WCDMA)　 都明确定义了在各种想象得到的状态下手机和网络的行为和反应,一致性测试检查手机的行为是否和协议标准规定的相一致,由此运营商和设备厂家可以信赖通过一致性测试的手机。 3G 一致性测试主要分为如下几个部分:RF、Protocol、UICC/USIM 和Acoustic等。 一致性测试的具体内容主要包括协议一致性测试和射频一致性测试,是一致性测试中非常重要的部分。占了一致性…     

WCDMA终端协议测试解析

介绍了协议测试的概念：包括一致性测试和互操作性测试,介绍了WCDMA终端一致性测试并对测试案例结果进行了分析。     

计算机网络协议测试及其发展

协议测试已经成为计算机网络和分布系统协议中最的领域之一。近年来，协议一致性测试技术得到了很好的发展和完善，与此同时，互操作测试和性能测试逐渐成为新的研究热点。本文在分析协议一致性测试的基础上，对协议测试的发展进行讨论。     

网络通信协议一致性测试研究

网络通信协议设计及开发的复杂性导致了协议工程技术的出现。文章主要研究协议测试理论中的一致性测试技术。在深入分析了一致性测试技术的原理及参考标准的基础上,针对现有的几种测试方法,分别阐述了它们各自的测试原理,并分析比较了几种方法的优缺点及适用场合。     

基于TTCN的测试执行方法及其应用

测试执行是协议一致性测试系统中的主要部分，本文提出一种基于测试描述语言ＴＴＣＮ的操作语义对标准测试集进行了解释执行的测试执行方法，利用这种方法所实现的一致性测试系统具有很强的灵活性和独立性，同时大大提高了测试的效率，另外，我们还介绍了基于这种测试方法所完成的协议一致性测试系统（ＰＣＴＳ）的总体结构，设计思想以及测试配置。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its