一种基于高阶矢量基函数的叠层预条件技术

基于六面体的高阶叠层基函数,提出了一种新颖的构造预条件矩阵的方法.该方法基于叠层基函数特有的嵌套性质,利用特殊的编号策略,将由有限元方法导致的系数矩阵分成块矩阵的形式,最后由不完全LU分解(ILU)导出近似的预条件矩阵.结合该预条件技术,发展了一种叠层预条件-GMRES算法,并将该预条件算法用于加速三维腔体散射的矢量有限元/边界积分(FE-BI)矩阵方程的迭代求解,讨论了该预条件算法中块矩阵ILU分解截断门限T_dr对算法的影响.     

“邻居单元”为基础的预条件方法及其应用

该文提出了一种具有物理意义的预条件方法--"邻居单元"为基础的预条件方法。该方法充分考虑了矩阵元素中的"主要"信息量,可以有效加快迭代收敛速度。在构造预条件因子时,采用从目标的"几何结构剖分"出发,而不是从"矩阵元素"出发确定"基权函数之间的作用量关系",这样保证了构造预条件矩阵的计算复杂度仅为O(N)。作为实例,该文将这种预条件方法与共轭梯度方法结合应用于矩量法基站天线分析所得方程的求解,数值结果表明了该文方法的有效性。     

二维双原型完全过采样DFT调制滤波器组的快速设计方法

传统的2维大规模滤波器组的设计方法具有复杂度高的缺点。该文提出一种设计2维双原型滤波器组的快速方法,该方法利用近似完全重构的条件,并采用完全过采样的离散傅里叶变换(DFT)调制滤波器组来设计。新算法将两个原型滤波器的设计问题归结为一个无约束优化问题,其中目标函数为滤波器组的总体失真(传递失真和混叠失真)与原型滤波器阻带能量的加权和,利用目标函数的梯度向量,通过双迭代机制求解该优化问题。单步迭代中,利用矩阵求逆的等效条件和块Toeplitz矩阵求逆的快速算法,显著地降低了计算复杂度。理论分析和数值实验表明,新算法可以得到整体性能更好的滤波器组,计算复杂度大幅度降低,故可以快速设计大规模的2维滤波器组。     

预条件共轭梯度法在大型振子阵列天线RCS分析中的应用

本文提出三重Toeplitz线性方程组预条件共轭梯度法,并将该法与快速付里叶变换(FFT)结合.这种结合算法称为PCGFFT.将PCGFFT应用于振子阵列天线的RCS分析中.由于预条件器的使用,系数矩阵的条件数得到了很大改善.数值结果表明,PCGFFT不仅降低了对计算机内存的需求,加快了迭代速度而且提高了算法的收敛性.     

求解复杂载体天线辐射问题的近场预条件技术

提出了一种近场预条件技术与LDU分解法相结合的新技术,用于加速矩量法(MoM)分析复杂载体上线天线辐射问题中线性方程组的迭代求解.通过LDU分解可将系数矩阵中表示载体上单元相互作用的具有对角占优特性的子阵分离出来,构造一个矩阵分解形式的预条件阵.结合广义最小留数(GMRES)法,分别对装载在两个简单形体和一架大型飞机模型上的线天线的辐射问题进行了求解.数值结果表明,该方法可大大加快线性方程组迭代求解的收敛速度,提高分析计算效率.     

正则化预条件方法在矩量法中的应用

计算电磁学中矩量法产生的系统矩阵是病态矩阵,使用迭代方法求解时很难收敛,即使采用现有的预条件技术也经常不收敛.本文借用不适定问题求解中的正则化方法的概念,提出采用正则化矩阵作为矩量法中矩阵方程的一个预条件矩阵.这种预条件方法可以直接改善原矩阵的特征值分布,而且不需要额外的空间来存储预条件矩阵.此外,本文提出通过正则化矩阵方程的L曲线的二阶导数的最大值点来确定正则化参数,使得预条件矩阵方程求解的效率最高.数值实验表明,对于高阶矩量法求解电场积分方程或者磁场积分方程时分别产生的矩阵方程,采用常见的预条件迭代方法求解时收敛很慢,但是采用本文的预条件迭代方法却可以较快地收敛.     

高阶FE-BI方法及一种新型的预条件技术

将基于六面体网格的高阶矢量基函数(higher order vector basis function)引入到矢量有限元-边界积分(FE-BI)混合方法中,用于建模带有深腔和狭长缝隙结构三维目标的电磁散射特性;提出了一种新型的预条件技术,用于加速FE-BI系统的迭代求解;给出了结合该预条件技术的GMRES方法求解腔体电磁散射的算例;数值结果证明了高阶FE-BI方法相对于低阶FE-BI方法的优势以及新型预条件技术的有效性.     

基于时域体面积分方程的分块预条件方法

时域体电场积分方程性态较好,但时域面积分方程性态较差,这就造成体面耦合的时域电场积分方程在迭代求解时经常遇到收敛较慢的问题,无法满足工程需要,并且一般预条件技术获得的加速效果也不甚理想。因此,时域体面积分方程迭代求解时间过长已成为体面积分方程在实际工程应用中的核心问题。针对时域体面电场积分方程矩阵性态差的问题,提出一种引入分块预条件方法(BMP),可以加快矩阵迭代收敛的速度。将时域体面积分方程的矩阵分解成3块矩阵相乘的形式,而这3块矩阵都是稀疏的,并通过几个体面算例说明该预条件技术的效率。     

双原型离散傅里叶变换调制滤波器组的快速设计方法

针对大规模的离散傅里叶变换(DFT)调制滤波器组设计算法复杂度高的问题,该文提出一种基于无约束优化的快速设计算法。该算法将两个原型滤波器的设计问题归结为一个无约束优化问题,将滤波器组的传递失真,混叠失真以及原型滤波器阻带能量的加权和作为目标函数。进而,采用双迭代机制来求解该优化问题。在单步迭代中,运用矩阵求逆的等效条件和Toeplitz矩阵求逆的快速算法,显著地降低了迭代的计算代价。仿真对比表明,与已有的设计算法相比,新算法计算代价低 ,可以得到整体性能更好的滤波器组,并且可以快速设计大规模的滤波器组。     

有耗半空间环境中导体目标电磁散射的快速分析

应用快速多极子方法求解有耗半空间环境中任意三维金属体的雷达散射特性.对于基函数与测试函数的近场组作用,我们用离散复镜像法严格处理半空间并矢格林函数.在处理远场区时,我们利用实镜像源和反射系数近似计算交界面处远场的作用.通过位于有耗半空间三面角反射器、立方体证明了方法的正确性和有效性.另外,将多分辨预处理器和快速多极子方法结合使得矩阵求解器的迭代次数和计算时间减少数倍.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its