一种基于BRISK改进的SURF红外图像拼接方法

在红外图像拼接技术的实际应用中,除了追求较高的拼接精度外,还应尽可能地提高拼接速度以满足实时性的要求。本文结合红外图像拼接技术的实际应用需求,将BRISK二值描述子和Canny边缘检测应用于SURF红外图像拼接,提出一种改进的SURF红外图像拼接方法。改进的红外图像拼接方法在特征点提取阶段将SURF特征点检测、Canny边缘检测和BRISK二值描述子有效结合,生成边缘SURF-BRISK特征点;在特征点匹配阶段采用自适应阈值的层次聚类方法作为搜索策略,并采用RANSAC算法剔除误匹配的特征点;在图像融合阶段采用渐入渐出的融合方法消除图像拼接缝隙。实验证明,本文所用红外图像拼接方法在对复杂场景下的红外图像进行拼接时,有效地提高了配准精度和拼接速度。     

基于颜色不变量的BRISK算法的改进

针对BRISK算法只考虑灰度图像,缺失了颜色信息,容易产生误匹配的问题,提出了一种基于颜色不变量的BRISK算法以实现彩色图像的特征提取与匹配。本文首先利用颜色不变量平面构建尺度空间,检测特征点;然后用每个特征点对地RGB值的大小关系描述特征点的颜色信息;最后用汉明距离进行相似性度量,完成匹配。实验表明,与原算法相比本方法在保证了原算法性能的同时,增加了BRISK算子对光学变化的鲁棒性。     

基于SIFT/ORB几何约束的红外与可见光图像特征点匹配

红外图像与可见光图像记录着地物的不同属性信息,两者融合能够优势互补,弥补单一数据源信息的不足。然而由于两者成像原理不同,热红外传感器与可见光传感器对同一场景获取的图像灰度差异较大,二者图像误匹配多,融合难度大。本文在分析红外与可见光图像共有特征的基础上,提出了一种基于SIFT与ORB特征检测的匹配方法,利用SIFT算子与ORB算子同时进行特征点检测,先基于RANSAC对SIFT匹配得到的同名点进行筛选,同时结合最近邻比次近邻算法获取ORB匹配点,再利用SIFT匹配点对ORB匹配点进行距离和角度的几何约束进一步剔除误匹配,最终得到特征点分布均匀、可靠度更高的匹配结果,解决因灰度差异较大产生的匹配效果不佳的问题。利用4组红外与可见光图像进行实验,结果表明,本文算法特征点正确匹配数量相较于SIFT分别提高了约3.7倍、3.2倍、3.6倍、3倍,大幅地提高了红外与可见光图像的匹配数量,为两者间的匹配提供了一种有效的方法。     

一种改进的ORB图像匹配算法

针对ORB特征匹配算法特征提取稳定性差,匹配精度低的问题,提出一种改进的ORB图像匹配方法。通过小波变换对图像预处理,利用自适应频谱抑制方法提取候选特征点集,再建立多尺度空间模型,筛选具有尺度不变性的精确特征点,并通过BRIEF算子生成特征描述子,最后使用Hamming距离进行特征匹配,完成配准。通过3组图像匹配实验对改进算法的有效性进行验证,实验结果表明,改进算法在兼顾ORB实时性的同时,提高了匹配精度,改善了图像尺度变化较大时特征提取的稳定性。     

画幅扫描红外成像实时拼接中的光束法平差

光束法平差是遥感图像实时拼接系统的关键步骤,它需要消耗大量的运算时间,同时也决定了系统的拼接精度。针对画幅扫描红外成像实时拼接系统中的光束法平差算法,提出了一种实用的光束法平差策略,利用相邻扫描行图像的配准平差,将最新扫描行图像依次配准到已拼接图像中,为拼接图像的实时更新奠定了基础。同时利用GPGPU对光束法平差算法进行了并行加速,在保证精度的情况下,提高了拼接算法速度。通过画幅扫描成像的实时平差实验,验证了算法的精度和实时性。     

一种基于改进ORB特征匹配的无人机视觉导航方法

为了解决在全球导航卫星系统（Global Navigation Satellite System）拒止情况下无人机导航能力缺失等问题,提出了一种基于改进快速提取旋转描述子（Oriented FAST and Rotated Brief,ORB）图像特征匹配的无人机视觉导航方法。首先,为了实现无人机的绝对定位,提出了一种特征图像基准数据库构建方法;其次,为提取图像数据集的特征点,采用了一种结合尺度不变特征变换（Scale Invariant Feature Transform,SIFT）的尺度空间优化ORB特征提取算法;最后,为了将图像特征与图像基准数据库快速匹配并提高其匹配精度,提出了一种改进ORB特征匹配算法——ORB+GMS+PROSAC算法。通过在ArcGIS中分割图像构建基准数据库并进行实验分析,结果表明,基于ORB+GMS+PROSAC特征匹配算法性能显著提升,其中匹配准确率上升5.05%,匹配时间减少41.61%,明显优于其他传统特征匹配算法。     

实时红外图像拼接中的LSH快速配准算法

为了提高画幅式摆扫红外遥感图像拼接的实时性,将LSH(locality sensitive hash)算法应用于图像快速配准,比较了常用的基于Hamming 距离、欧式距离和余弦距离的三种LSH方案的性能,实验结果表明,基于Hamming距离的LSH方法在红外图像配准中具有更好的实时性和准确性。通过对Hamming距离的LSH实现及改进,并利用遥感图像进行了图像配准的性能测试,构建了基于Hamming距离LSH算法的快速拼接系统。     

一种针对车载全景系统的图像拼接算法的仿真

传统的全景图像拼接算法,多采用Harris角点的特征提取或尺度不变特征转换(SIFT)的特征匹配算子的方式,对存在重合部分的图像进行图像拼接处理.但对于车载全景图像拼接算法而言,车身四周采集到的4幅鱼眼畸变图像,使用特征提取算子的方法进行的拼接,运算的复杂度高,效率低,不能满足车载设备的实时性要求.针对这一问题,该文提出一种专门应用在车载系统的车载全景图像拼接算法,并对其进行Matlab仿真,最大限度提高算法的运算效率,以满足车载系统实时性的要求,真实的反应路况信息,辅助驾驶员安全驾驶.     

一种用于图像拼接的改进ORB算法

针对Oriented FAST and Rotated BRIEF(ORB)算法缺少尺度不变特性,误匹配率高,易造成图像拼接质量差等问题,本文提出一种用于图像拼接的改进ORB算法。首先使用一种基于尺度不变的特征检测算法对图像进行特征点检测,然后用ORB描述算法对特征点进行特征描述,用ORB匹配算法进行粗匹配,再用双向匹配和Random Sampling Coherence(RANSAC)算法对匹配点进行精匹配和提纯,进一步提高其正确率,最后使用渐入渐出加权融合完成图像拼接。实验结果表明,本文方法在图像的缩放和旋转、模糊、光照强度、拍摄视角等情况下都具有优秀的鲁棒性和稳定性,是一种实时性强、准确度高、拼接质量优秀的图像拼接方法。     

改进BRISK特征的快速图像配准算法

为了实现超分辨率图像重建中高精度快速图像配准,提出一种改进BRISK特征的快速图像配准算法。原有BRISK算法在特征提取和匹配过程中,忽视了角点分布信息,其匹配策略单一,导致误匹配率高。针对该问题,首先利用BRISK算法构建连续尺度空间,在此基础上对图像进行分块,然后利用图像区域显著性自适应选择角点检测阈值,获得均匀分布的角点,最后利用快速最近邻FLANN算法结合RANSAC的方法进行二值特征快速匹配。实验结果表明:改进的BRISK算法相比原算法在保持速度的基础上达到亚像素级配准精度,并具有优越的场景适应性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its