共查询到10条相似文献,搜索用时 93 毫秒
1.
M. E. Sherwin D. T. Nichols G. O. Munns P. K. Bhattacharya G. I. Haddad 《Journal of Electronic Materials》1991,20(12):979-982
Bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs have been grown by chemical beam epitaxy for use in multi-quantum
well separate confinement heterostructure lasers. InGaAsP has been successfully grown for λ=1.1, 1.2 and 1.4 μm. The TMI and
TEG incorporation coefficients have strong dependencies on substrate temperature and also charge as the InGaAsP composition
tends towards InP. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence
to minimize the measured photoluminescence FWHM. InGaAs quantum wells as narrow as 0.6 nm have been grown with 7K FWHM of
12.3 meV. Lattice matched MQW-SCH lasers were grown using different interface switching sequences with the best laser having
a threshold current density of 792A/cm2 for an 800 × 90 μm broad area device. 相似文献
2.
3.
F. Bugge A. Knauer S. Gramlich I. Rechenberg G. Beister J. Sebastian H. Wenzel G. Erbert M. Weyers 《Journal of Electronic Materials》2000,29(1):57-61
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers
were grown by MOVPE. For wavelengths above 940 nm broad area devices with InGaAs QWs show state-of-the-art threshold current
densities. Ridge-waveguide lasers fabricated by selective etching achieve 200 mW CW monomode output powers. (In)GaAsP QW-based
diode lasers with an emitting wavelengths around 800 nm suffer from problems at the upper GaInP/AlGaAs interface. Asymmetric
structures with a lower AlGaAs/GaInP and an upper AlGaAs/AlGaAs waveguide not only avoid this interface but also offer better
carrier confinement. Such structures show very high slope efficiencies and a high T0. Maximum output powers of 7 W CW are obtained from 4 mm long devices. 相似文献
4.
N. V. Kryzhanovskaya M. V. Maximov S. A. Blokhin M. A. Bobrov M. M. Kulagina S. I. Troshkov Yu. M. Zadiranov A. A. Lipovskii E. I. Moiseev Yu. V. Kudashova D. A. Livshits V. M. Ustinov A. E. Zhukov 《Semiconductors》2016,50(3):390-393
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm2/W. 相似文献
5.
The facet oxidation of InGaAsP/InP and InGaAs/InP lasers is investigated after aging under high constant optical output power or high current stress. Facet oxidation in InGaAsP/InP lasers is negligibly small under several thousand hours of practical operation. The thickness of oxide film increases in proportion to optical output power and logarithm of aging time. The growth rate of facet oxide film weakly depends on the junction temperature and the activation energy is estimated to be 0.07 eV within a experimental range between 25 and 150°C. The facet of InGaAs/InP lasers are oxidized more easily than that of InGaAsP/InP lasers but are about two orders of magnitude more stable against oxidation than that of AlGaAs/GaAs lasers. 相似文献
6.
半导体宽谱激光在传感、光谱学等领域有着重要的应用.传统半导体宽谱激光器主要采用宽增益材料和全反射波导,采用简单量子阱结构制备宽谱激光器一直是个难题.作者首次证明了一种基于布拉格反射波导一维光子晶体的新型量子阱宽谱激光器,其结构主要包括In Ga As/Ga As量子阱和上下布拉格反射镜,通过偏离解理实现激光输出.研究发现在偏离角7°时,器件展现宽谱超辐射发光二极管特性,4.4°偏离角时实现了宽光谱激光输出,光谱宽度达到33.7 nm,连续输出功率36 m W.本研究为探索新型量子阱宽谱激光器提出了一种新的技术途径. 相似文献
7.
Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45° dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-Å In0.2Ga0.8As/100-Å GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-Å GaAs/830-Å AlAs), which serves as a distributed Bragg reflector (~99%) after 45° angle etching 相似文献
8.
S. A. Stockman A. W. Hanson C. M. Colomb M. T. Fresina J. E. Baker G. E. Stillman 《Journal of Electronic Materials》1994,23(8):791-799
Factors which influence the alloy composition and doping level of CCl4-doped In0.53Ga04.7As grown at low temperatures (450°C < Tg < 560°C) by low-pressure metalorganic chemical vapor deposition (MOCVD) have been investigated. The composition is highly
dependent on substrate temperature due to the preferential etching of In from the surface during growth and the temperature-dependent
growth efficiency associated with the Ga source. The lower pyrolysis temperature of TEGa relative to TMGa allows the growth
of CCl4-doped InGaAs at lower growth temperatures than can be achieved using TMGa, and results in improved uniformity. High p-type
doping (p ∼ 7 × 1019 cm-8) has been achieved in C-doped InGaAs grown at T = 450°C. Secondary ion mass spectrometry analysis of a Cdoping spike in InGaAs
before and after annealing at ∼670°C suggests that the diffusivity of C is significantly lower than for Zn in InGaAs. The
hole mobilities and electron diffusion lengths in p+-InGaAs doped with C are also found to be comparable to those for Be and Zn-doped InGaAs, although it is also found that layers
which are highly passivated by hydrogen suffer a degradation in hole mobility. InP/InGaAs heterojunction bipolar transistors
(HBTs) with a C-doped base exhibit high-frequency performance (ft = 62 GHz, fmax=42 GHz) comparable to the best reported results for MOCVD-grown InP-based HBTs. These results demonstrate that in spite of
the drawbacks related to compositional nonuniformity and hydrogen passivation in CCl4-doped InGaAs grown by MOCVD, the use of C as a stable p-type dopant and as an alternative to Be and Zn in InP/ InGaAs HBTs
appears promising. 相似文献
9.
A. G. Gladyshev I. I. Novikov L. Ya. Karachinsky D. V. Denisov S. A. Blokhin A. A. Blokhin A. M. Nadtochiy A. S. Kurochkin A. Yu. Egorov 《Semiconductors》2016,50(9):1186-1190
The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability. 相似文献
10.
M. Hong M. C. Wu Y. K. Chen J. P. Mannaerts M. A. Chin 《Journal of Electronic Materials》1992,21(2):181-185
We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantum-well lasers emitting at 980nm in a novel configuration
of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/AlGaAs) are utilized as optical
confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers
are grown by temperature modulation MBE without any shutter operation. The heterointerfaces in the multilayers are linearly
graded such that the energy barrier heights are greatly decreased. This has led to a drastic reduction in the series resistance
which is essential in the performance of high output power. The 5μm × 750μm device has far-field angles of 10° by 20°, a threshold current of 45 mA, an external differential quantum efficiency of
1.15 mW/mA (90%), and an output power of 620 mW, all measured at room temperature under CW operation. A record high fiber
coupling efficiency of 51% has been achieved and more than 130 mW of power is coupled into a 5μm-core single mode fiber. 相似文献