共查询到20条相似文献,搜索用时 203 毫秒
1.
报导了一种基于级联保偏光纤(PMF)和长周期 光纤光栅(LPFG)的Sagnac环温度和环境折射率双参 量传感器。在Sagnac干涉环内级联PMF和LPFG,LPFG的双折射效应使得Sagnac干涉的相位差 受环境折射率调 制。所提出的双参量传感器的透射光谱中,由LPFG形成的透射峰和Sagnac干涉形成的干涉峰 对温度和环境折射 率各自具有不同的灵敏度,通过对两者特征峰波长漂移量的测量就可实现对温度和环境折射 率的同时传感。实验上 搭建了温度和环境折射率双参量测试装置,采用波长解调方法,受光源功率波动的影响小, 温度灵敏度为1.2nm/℃; 环境折射率灵敏度为15nm/RIU。该双参量传感方案解决了温度和环 境折射率的交叉敏感问题,结构简单,采用金 属板凹槽结构进行封装有效地保护了LPFG,在生物传感和化学传感等领域具有广阔的应用前 景。 相似文献
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片上折射率传感在安全检查、环境监测、健康诊断和食品监督等领域有着广阔的应用前景,基于硅基微环谐振器的折射率传感器具有微型化、集成化等优点,已成为当前研究的热点。文章首先对硅基微环谐振器的折射率传感探测原理进行了介绍,然后依据探测原理分类梳理了国内外硅基微环折射率传感的最新研究进展,并分析总结了不同传感探测原理的优缺点,最后讨论了现阶段硅基微环谐振器在折射率传感中存在的问题和未来的发展方向。 相似文献
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提出并制作了基于硅(Si)基双微环谐振腔的高灵敏 度电流传感器。所设计的Si基双微 环谐振腔的输出功率对波导内传输TE模的有效折射率变化非常敏感,探测由有效折射率变 化造成的输出功率改变可实现高灵敏度微弱电流传感。在设计的Si基微环上集成了具有较高 加热效率的TiN 电阻,当有电流通过该电阻时,电阻发热并改变波导内传输TE 模的有效 折射率,最终造成微环输出功率改变。通过光功率计检测不同输入电流下微环输出功率,即 可 实现对电流的测量。实验结果表明,制作的微环传感器在测试范围为0~6mA时,灵敏度 高达1575dBm/A,线性相关系数 R2大于0.999 相似文献
4.
基于尾纤端面镀金属反膜的单根长周期光纤光栅,提出了一种包层部分腐蚀的长周期光纤光栅迈克耳孙干涉仪结构,提高了长周期光纤光栅(LPFG)的灵敏度。应用干涉原理,得出了长周期光纤光栅迈克耳孙干涉仪干涉波峰随外界环境折射率的变化关系。并从实验上对腐蚀前的长周期光纤光栅迈克耳孙干涉仪和带腐蚀结构的长周期光纤光栅迈克耳孙干涉仪的折射率传感灵敏度进行对比。结果表明,包层部分腐蚀的长周期光纤光栅迈克耳孙干涉仪反射谱中的干涉峰值对折射率传感的灵敏度得到了显著的提高,对于折射率为1.333和1.352的液体,干涉峰值的移动量从0.9 nm增加到3.4 nm。 相似文献
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本文对一种基于槽型微环谐振器的生物传感器进 行了研究,通过微环谐振器与槽型波导的结合,增强光与传感媒质的相互作用,减小传输损 耗的制约影响。采用时域有限差分法(FDTD) 研究了波导有效折射率随传感物质材料折射率的变化,结果显示它们呈线性关系,这为折射 率的 有效传感提供了可能。采用电子束光刻和等离子体刻蚀技术在SOI基片上制备了样品,SOI 基片 的顶层硅和埋入氧化层的厚度分别为220 nm和2μm,微环谐振器的 微环半径为30 μm。采用波 导光栅耦合器来实现光的输入和输出,频谱测量显示槽型微环谐振器的品质因数达到了2940, 通过测量传感器表面覆盖不 同浓度的氯化钠溶液时光谱谢振峰的变化,得到传感器的灵敏度 和检测极限分别为980.24 nm/RIU和5.4×10-4 RIU。 相似文献
6.
王帆张永安阳胜郭胤初张亚萍 《激光与光电子学进展》2017,(9):344-351
以杨氏双缝实验为基础,探究了光源空间相干性对干涉的影响情况。首先将光源空间展宽问题等效为平行光照射具有宽度的双缝的问题,再将两缝近似为离散化的多个次光源点阵列,每相邻点间距非常微小。从光矢量叠加原理出发推导出一种算法,该算法以两缝中每一对次光源点作为干涉单元,分别求出各单元在每一个观测点处的干涉光强,再对所有单元的干涉光强线性叠加,算出观测点的总光强。最后利用Matlab模拟出不同缝宽下,单色平行光、高斯光谱、矩形光谱分别垂直照射双缝时的光强分布情况。通过模拟结果的对比发现,双缝展宽对条纹衬比度的影响远甚于光谱展宽。所提算法简化了计算过程,也极大地提高了程序运行速度。 相似文献
7.
通过模拟仿真,研究了基于绝缘衬底上的硅(Silicon-On-Insulator,SOI)的微环生物传感器的传感性能,得出其体传感灵敏度为38.71 nm/RIU,探测极限为1.810-3 RIU,Q值为2.22104。基于该结构,分析了噪声对传感器性能的影响,包括光源噪声和温度噪声。为了降低噪声影响,设计了具有参考和探测通道的双微环差分传感器,通过差分运算扣除噪声引起的谐振波长漂移,从而可以有效降低噪声对传感器探测结果的影响。通过数值模拟和计算,其被探测物的折射率变化的相对误差减小了15.85%,表明微环差分传感器可以有效降低噪声的影响,对提高微环生物传感器的性能将有极大的促进作用。 相似文献
8.
提出了一种基于双偏置结构光纤马赫-曾德干涉仪(Mach-Zehnder interferometer,MZI)的超高灵敏度折射率传感器,理论分析了偏置型MZI的干涉机理。通过光束传播法(beam propagation method,BPM)模拟分析了多模态偏置光纤的折射率传感特性、以及在不同偏置长度和折射率 范围内折射率灵敏度的变化,对比了单偏置与双偏置的传感特性。仿真结果表明,在折射率为1.333 0—1.334 0的范围内,单偏置MZI的折射率灵敏度为-5 557 nm/RIU,而双偏置MZI的折射率灵敏度为-14 071 nm/RIU,该结果为实现高灵敏度液体折射率测量提供了重要理论依据。该传感器结构紧凑,整体长度只有1 200 μm,在液体折射率测量领域具有重要的应用价值。 相似文献
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10.
微纳双FBG高灵敏度折射率传感特性研究 总被引:2,自引:2,他引:0
光纤布拉格光栅(FBG)的倏逝波场随着其半径的 减小而增强,从而对环境折射 率响应灵敏度同步提高,但其对折射率敏感的同时存在温度交叉敏感性;而微纳双FBG传感 器实现高灵敏度折射率传感的同时又可解决温度交叉敏感问题。本文利用2层和3层光纤纤芯 基模的色散方 程分析了微纳双FBG的折射率传感灵敏度与其半径之间的关系,发现其半径越小,折射率 传 感灵敏度越大。实验研究了不同半径的双FBG在温度补偿情况下的折射率传感灵敏度,得到 半径为0.3μm的双FBG折射率传感灵敏度为1.057μm/RIU。 相似文献
11.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
12.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
13.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
14.
YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
15.
The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
16.
Meihua Shen Wilfred Pau Nicolas Gani Jianping Wen Shashank Deshmukh Thorsten Lill Jian Zhang Hanming Wu Guqing Xing 《半导体技术》2004,29(8)
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration. 相似文献
17.
White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
18.
Complete approach to automatic identification and sub-pixel center location for ellipse feature 总被引:1,自引:0,他引:1
XUE Ting WU Bin SUN Mei YE Sheng-hua 《光电子快报》2008,4(1):51-54
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction. 相似文献
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TANG Bin JIANG Xing-fang LIU Zhi-min 《光电子快报》2008,4(1):78-80
By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly. 相似文献