基于MODBUS双层网络自动控制系统-高空清洗系统

为解决远程控制系统实时性弱、可靠性差、操作复杂和资源不能有效共享等问题,以及实现自动化系统的双向式、数字化及多层次通信网络.本文提出Modbus/TCP与Modbus/RTU协议的双层网络通信结构,描述了一种基于Modbus/TCP的自动化控制系统,并给出了Modbus/TCP在Client/Server下实时远程可操控技术和实时控制的用户界面,提高了Internet环境下工业控制技术的远程操控,实现设备的远程操纵及实时监控,并将其应用于高空清洗作业的机器人与主机之间的信息传输.     

远程启闭控制系统在河道堤防水闸的应用

随着我国信息化技术的大力发展,在水利工程的建设中,水利信息化的水闸监控系统也逐渐受到人们的重视,它通过计算机网络技术,自动控制技术以及传感器技术等实现了水闸控制系统的远程监控功能,本文结合泉州市晋江河道堤防管理处计算机自动化监控管理系统二期项目工程探讨研究远程水闸启闭控制系统的结构功能及其应用情况。     

基于ARM7的远程智能住宅控制装置的研制

随着网络技术和通信技术的不断发展以及人们对生活要求的不断提高,实现家庭智能的远程控制已经成为必然的趋势。本文采用嵌入式系统、GPRS通讯技术和RS485总线技术相结合的方式,研制了一种操作简单且成本较低的远程智能家电控制系统。通过该系统,可以将家中的电器、防盗系统、水电系统有机的结合起来,实现对家用电器和各个子系统的智能管理。同时能通过短信等方式,实现对家庭系统的远程监控。     

AB SLC500系统在河南油田三次采油中的应用

河南油田三次采油应用AB SLC500系统实现了全过程监控。详细介绍了系统工艺流程、控制系统方案、软硬件配置,阐述了AB远程I/O技术的实现以及系统软件的设计。实践证明该系统的成功运用提高了三次采油的自动化水平和经济效益。     

基于Web的远程实时应急监控系统研究

随着网络技术的发展,远程监控技术也得到了广泛的应用.在应用管理系统中,远程实时应急监控系统可以应急管理区域进行实时监控管理,实现数据信息实时性的交换.本文对应急管理监控系统及远程监控技术进行了分析和研究,结合应急管理系统工作的实际情况和应急监控技术的需要,采用Web技术对远程实时应急监控系统进行了设计和研究.     

基于ARM嵌入式系统的自动化配送系统

随着计算机技术和无线通信网络的发展,远程监控系统和自动化控制系统在工业领域得到了广泛的应用。介绍了基于ARM微处理器的网络视频监控系统的组成和实现自动化配送的流程,着重阐述了自动化配送系统的原理,设计方案,硬件模块和软件模块的实现方法。     

基于3G网络和PLC远程工控系统设计的实现方法

本文主要是从现代自动化远程控制系统的要求出发,提出利用3G网络以及PLC远程工控系统来实现远程控制的设计方案。文中分别从整个系统的体系结构、3G网络终端以及PLC控制系统之间的通信、PLC控制系统的设计三个个方面阐述了控制系统的整体设计。利用3G网络和PLC搭建远程工控系统远程易于实现,成本也不高,控制能力强。     

利用VPN技术突破企业信息化瓶颈

应用成熟的VPN技术打造适合企业办公与生产的网络化信息平台,构建结合企业远程通讯系统、办公自动化系统、远程视频会议等系统和远程控制系统为一体的企业信息化管理系统,实现坚实灵活高效的企业信息化网络体系。     

远程智能视频实时监控系统

当前,住宅的安全性越来越受到住户的关心,一套使用方便、可全天候工作的家用远程智能视频监控系统将会给主人增加安全感。本文介绍的系统具有以下特点:远程实时视频监控;全方位监控(门、室内、窗、室外);智能报警(自动电话报警、自动声音报警);PC控制,自动保存数据、图像;微波、视频、机械、红外传感技术综合应用,提高监控效果;工作方式灵活可控;成本低;使用简单;易于扩展,用途广泛。系统设计随着计算机技术的发展,通过计算机远程控制技术和多种传感器技术实现远程监控已经变得非常现实,技术也日益完善。将计算机远程控制技术和家用监控系…     

位置控制计算机远程监控系统的研究与设计

随着现代技术的不断发展,远程监控的技术也得到了飞速的发展.在计算机的远程监控系统中,主要是以计算机为主要的核心技术,从而实现远程控制和远程监视的现象.其中在现代远程监控的方式当中,位置控制可以说是一个相当重要的部分,因此需要对其进行重点研究和分析.在本文当中首先对远程监控进行了概述;其次,对影响其远程监控系统发展的因素进行了分析;最后对远程功能的实现进行了研究.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its