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Hussein Nili Sumeet Walia Sivacarendran Balendhran Dmitri B. Strukov Madhu Bhaskaran Sharath Sriram 《Advanced functional materials》2014,24(43):6741-6750
Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3: a‐STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal‐oxide‐metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a‐STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (103–104) switching ratios, good endurance (>106I–V sweep cycles), and retention with less than 1% change in resistance over repeated 105 s long READ cycles. Nano‐contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano‐switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin a‐STO/metal stacks highlight the impact of mechanical stress on the modulation of non‐linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems. 相似文献
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Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)
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Chengbin Pan Yanfeng Ji Na Xiao Fei Hui Kechao Tang Yuzheng Guo Xiaoming Xie Francesco M. Puglisi Luca Larcher Enrique Miranda Lanlan Jiang Yuanyuan Shi Ilia Valov Paul C. McIntyre Rainer Waser Mario Lanza 《Advanced functional materials》2017,27(10)
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Threshold Switching: Threshold Switching of Ag or Cu in Dielectrics: Materials,Mechanism, and Applications (Adv. Funct. Mater. 6/2018)
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Zhongrui Wang Mingyi Rao Rivu Midya Saumil Joshi Hao Jiang Peng Lin Wenhao Song Shiva Asapu Ye Zhuo Can Li Huaqiang Wu Qiangfei Xia J. Joshua Yang 《Advanced functional materials》2018,28(6)
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Memory Devices: Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices (Adv. Funct. Mater. 25/2015)
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Hong Wang Yuanmin Du Yingtao Li Bowen Zhu Wan Ru Leow Yuangang Li Jisheng Pan Tao Wu Xiaodong Chen 《Advanced functional materials》2015,25(25):3980-3980
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Resistive‐Switching Memory: Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices (Adv. Funct. Mater. 35/2018)
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Woocheol Lee Youngrok Kim Younggul Song Kyungjune Cho Daekyoung Yoo Heebeom Ahn Keehoon Kang Takhee Lee 《Advanced functional materials》2018,28(35)
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Memristors: Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO3‐δ Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance (Adv. Funct. Mater. 47/2014)
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Felix Messerschmitt Markus Kubicek Sebastian Schweiger Jennifer L.M. Rupp 《Advanced functional materials》2014,24(47):7447-7447
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Transparent Electronics: Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics (Adv. Funct. Mater. 23/2014)
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Seongpil Chang Yun Seon Do Jong‐Woo Kim Bo Yeon Hwang Jinnil Choi Byung‐Hyun Choi Yun‐Hi Lee Kyung Cheol Choi Byeong‐Kwon Ju 《Advanced functional materials》2014,24(23):3481-3481
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Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014)
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Haitao Sun Qi Liu Congfei Li Shibing Long Hangbing Lv Chong Bi Zongliang Huo Ling Li Ming Liu 《Advanced functional materials》2014,24(36):5772-5772
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Perovskite Solar Cells: Passivated Perovskite Crystallization via g‐C3N4 for High‐Performance Solar Cells (Adv. Funct. Mater. 7/2018)
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Lu‐Lu Jiang Zhao‐Kui Wang Meng Li Cong‐Cong Zhang Qing‐Qing Ye Ke‐Hao Hu Ding‐Ze Lu Peng‐Fei Fang Liang‐Sheng Liao 《Advanced functional materials》2018,28(7)
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Perovskite Solar Cells: All‐Carbon‐Electrode‐Based Endurable Flexible Perovskite Solar Cells (Adv. Funct. Mater. 11/2018)
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Qiang Luo He Ma Qinzhi Hou Yingxiang Li Jing Ren Xuezeng Dai Zhibo Yao Yu Zhou Lichen Xiang Huayun Du Hongcai He Ning Wang Kaili Jiang Hong Lin Huaiwu Zhang Zhanhu Guo 《Advanced functional materials》2018,28(11)
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《Advanced functional materials》2014,24(43):6735-6740