串联2—2复合材料的介电击穿研究

研究了串联2－2型复合材料的介电击穿特性。串联2－2型压电复合材料结构较为简单，它是研究具有复杂连通性压电复合材料的基础。根据能量守恒定律，推导出串联2－2复合材料中压电陶瓷PZT层上和聚合物PVDF层上的电场强度Ec、Ep。由于压电陶瓷的介电常数εc(≈1600ε0)远远大于聚合物的介电常数εp(≈12εo)，因此Ep远远大于Ec。尽管PVDF的介电强度高于PZT的介电强度，但由于Ep远远大于Ec，所以串联2－2型压电复合材料的介电击穿往往是从聚合物层开始的，最后导致复合材料整体被击穿。对理论计算进行了实验验证，结果表明：在PZT含量较低时，计算值与试验值比较接近，但随着复合材料中PZT含量的提高，二者的偏差越来越大。文章最后定性讨论了在高PZT含量时复合材料的计算值与试验值偏差较大的原因。     

串联2—2复合材料的介电性和压电性

以ＰＺＴ为陶瓷相，以聚偏二氟乙烯（ＰＶＤＦ）为聚合物相，采用热压法制备了串联２－２型样品。测试了串联２－２型压电复合材料的介电、压电性能。实验结果表明，串联２－２型复合材料的压电应变系数ｄ３３及介电常数ε均较小；在低频，由于界面极化引起的夹层损耗，其介电损耗ｔｇδ则较大。     

2-2型圆管压电复合材料的频率仿真与制备及性能测试

研制一种2-2型圆管压电复合材料。将压电陶瓷圆管沿轴向方向均匀切割,把环氧树脂浇注于切槽,经打磨和蒸镀电极,制成2-2型压电复合材料圆管。对压电复合材料圆管的压电和介电性能进行测试,结果为谐振频率388 k Hz,带宽11.2 k Hz,声阻抗18.05 Pa·s/m3,相对介电常数859,声速3 200 m/s,d33常数480 p C/N,振动位移89.5 pm。该压电复合材料圆管适合做水平全向宽带换能器。     

2-2型水泥基压电机敏复合材料的研制

在土木工程领域中，智能结构系统越来越受到人们的重视，而在智能结构系统中机敏材料是不可缺的元素，它是构成智能结构中的传感器和驱动器的关键材料。针对目前土木工程领域智能结构中存在的结构材料与机敏材料相容性差问题，采用水泥基材料作为压电机敏复合材料的基体，通过调节水泥基材料组分和比例，克服水泥基材料与压电陶瓷在密度上的悬殊差异为材料准备带来的困难，制备出2－2型水泥基压电机敏6复合材料。同时，采用集成了微型计算机、MTS自动伺服试验机、示波器、信号发生器、线性放大器和HP－IB界面的测试系统测量2－2型水泥基压电复合材料的弹性性能、传感性能和驱动性能。实验结果表明，在实验范围里，该材料具有线弹性性能；传感性能和驱动性能具有明显的频率依赖性；在超低频范围内，2－2型水泥基压电复合材料的压电电压系数的模值随频率线性增大，相角随频率增大开始时增大较快，随后趋于一常数；2－2型水泥基压电复合材料的压电性能与聚合物基压电复合材料相似。     

层叠复合材料宽带换能器设计

利用多模耦合原理,将两片不同厚度的1-3型复合材料叠堆,制作宽带压电振子。用串并联理论与等效参数理论,计算不同厚度复合材料的谐振频率,得出构成层叠压电振子的两片复合材料的谐振频率差,并通过实验加以验证。结果显示,实验值与计算值吻合较好。将上述压电振子灌封,制作水声换能器并进行测试。结果表明,四只换能器的–3 d B带宽最大可达80 k Hz,最大发送电压响应均在163 d B以上。     

3-2型压电复合材料参数对厚度振动模的影响

3-2型压电复合材料在水声换能器应用中主要工作于厚度振动模态。应用切割填充法制备了四种3-2型压电复合材料,并通过改变复合材料中压电陶瓷的体积分数,实验测得了四种3-2型压电复合材料厚度谐振频率随体积分数增加而升高的速率,并分析了不同压电陶瓷与环氧树脂对样品厚度谐振频率变化率的影响。同时分析了复合材料反对称体振动模与厚度振动模的耦合,并提出了避免这种耦合的方法。     

厚度伸缩压电陶瓷振子

对厚度伸缩压电陶瓷振子的振动状态进行了分析,并得到其等效电路.推导了振子的谐振频率、反谐振频率以及等效电路参数与振子尺寸、振子材料的介电、压电、弹性常数间的关系式.最后讨论了振子的一些特性和制作.     

3-2型压电复合材料参数对厚度振动模的影响

3-2型压电复合材料在水声换能器应用中主要工作于厚度振动模态.应用切割填充法制备了四种3-2型压电复合材料,并通过改变复合材料中压电陶瓷的体积分数,实验测得了四种3-2型压电复合材料厚度谐振频率随体积分数增加而升高的速率,并分析了不同压电陶瓷与环氧树脂对样品厚度谐振频率变化率的影响.同时分析了复合材料反对称体振动模与厚度振动模的耦合,并提出了避免这种耦合的方法.     

3-2型压电复合材料参数对厚度振动模的影响

3-2型压电复合材料在水声换能器应用中主要工作于厚度振动模态。应用切割填充法制备了四种3-2型压电复合材料，并通过改变复合材料中压电陶瓷的体积分数，实验测得了四种3-2型压电复合材料厚度谐振频率随体积分数增加而升高的速率，并分析了不同压电陶瓷与环氧树脂对样品厚度谐振频率变化率的影响。同时分析了复合材料反对称体振动模与厚度振动模的耦合，并提出了避免这种耦合的方法。     

1-3-2型压电复合材料的研制

基于Newnhm复合材料串、并联理论,推导了计算1-3-2型压电复合材料的介电常数和压电常数的公式。经反复试验,研制了两批1-3-2型压电复合材料样品。测试结果表明,1-3-2型压电复合材料性能参数的理论计算值与实测结果相符．     

Structural and dielectric properties of ZrO2–TiO2–V2O5 nanocomposite prepared by CO-precipitation calcination method

Nanocrystalline ZrO₂–V₂O₅–TiO₂ composite was synthesized by co-precipitation method and calcined at 500 and 700 °C. The formation of the composite material has been confirmed by X-ray diffraction analysis. The surface morphology was determined by SEM and HRTEM and it was seen that increase in calcination temperature increases the grain size. EDX analysis confirms the presence of zirconium, titanium and vanadium in the lattice. Optical absorption studies reveal a very low absorption in the visible region for both the samples. The dielectric constant, loss and ac conductivity of the pelletized samples have been examined at different temperatures as functions of frequency and the activation energies were calculated. The results indicated that the dielectric constant increases with calcination temperature. It was seen that the dielectric constant increases on the addition of Vanadia to zirconia–titania composite making it ideal for use as a gate dielectric material.     

Magnetic,optical, microscopic and electrical behavior of Ca2−xYxCo2O5 prepared by a molten flux method

In this present study, we have reported the preparation of yttrium doped polycrystalline Ca_2−xY_xCo₂O₅ (x=0.0–1.0) material by a molten flux method and its various properties like electrical, optical, dielectric and magnetic behaviors. Characterization techniques have been adopted to confirm its physical nature and properties. X-ray diffraction results confirmed the crystal structure of prepared Ca_2−xY_xCo₂O₅ as orthorhombic and the scanning electron microscope pictured the presence of platelet-shaped particles with the dimensions of 150–300 nm. It also reveals the state of higher concentration of yttrium (Y³⁺) controls the grain size of Ca_2−xY_xCo₂O₅ ceramics. Further, we find out that the higher concentration of yttrium (Y³⁺) increases the optical band gap due to the occurrence of metal–insulator transition and also the same in electrical resistivity from 0.2 mΩ cm to 0.5 mΩ cm, which is due to the replacement of holes by Y³⁺ ions. The result of dielectric studies proves that the conduction mechanism of yttrium doped calcium cobalt oxide is due to space charge polarization. The magnetic saturation behavior shows the decreasing area in the hysteresis curve while the Y³⁺ concentration is increased, which is due to the phase transition of ferromagnetic to paramagnetic.     

CaO-SiO2-B2O3基板材料制备的研究

研究高温熔融法制备的CaO-B2O3-SiO2与溶胶凝胶法(sol-gel)法制备的CaO-B2O3-SiO2按不同比例制备的复相陶瓷,在850℃烧结温度下的晶相组成、微观结构、烧结性能、介电性能与导电浆料的匹配性.结果表明高温熔融法制备的CaO-B2O3-SiO2晶相含有大量的CaSiO3与少量的CaB2O4.添加sol-gel法制备的CaO-B2O3-SiO2后晶相无明显变化,但经SEM分析CaSiO3晶相长大,改善了体系的烧结性能与介电性能.当添加量为15.5%,在1 MHz下,可获得εr=5.80,tgδ=0.46× 10-4.     

Effect of rhenium doping on various physical properties of single crystals of MoSe2

正Effect of rhenium doping is examined in single crystals of MoSe_2 viz.MoRe_(0.005)Se_(1.995), MoRe_(0.001)Se_(1.999) and Mo_(0.995)Re_(0.005)Se_2,which is grown by using the direct vapor transport(DVT) technique. The grown crystals are structurally characterized by X-ray diffraction,by determining their lattice parameters a and c,and X-ray density.Also,the Hall effect and thermoelectric power(TEP) measurements show that the single crystals exhibit a p-type semiconducting nature.The direct and indirect band gap measurements are also undertaken on these semiconducting materials.     

K+掺杂对SnO2-LiZnVO4系湿敏陶瓷性能的影响

为了提高 SnO_2-LiZnVO_4系湿敏材料的性能,采用共沉淀法制备出 SnO_2-K_2O-LiZnVO_4系纳米湿敏粉体。考察了液相掺杂 K+对材料湿敏性能、复阻抗特性和电容特性的影响。实验结果表明,采用共沉淀法制备纳米粉体并使K+液相掺杂量为 2.5%(摩尔分数),可使湿敏材料低湿电阻小、灵敏度适中,适当的 K+添加量可明显改善 SnO_2-LiZnVO_4系纳米材料的感湿特性。     

PNW对PMS-PZT压电陶瓷结构和性能的影响

采用传统陶瓷工艺制备了PNW-PMS-PZT四元系压电陶瓷,分析了陶瓷样品的相结构组成,结果表明所有陶瓷样品的相结构为纯钙钛矿相结构;随着PNW含量的增加,陶瓷晶粒逐渐长大;研究了室温下PNW含量对介电性能和压电性能的影响,实验表明,随着PNW含量的增加,介电常数rε、机电耦合系数kp和压电常数d33先增加,PNW含量为0.02 mol时分别达到最大值,然后降低;随着PNW含量的增加,介电损耗tanδ一直增加,机械品质因数Qm和居里温度TC始终降低。PNW含量为0.02 mol的压电陶瓷适合制作大功率压电陶瓷变压器。其性能为:rε=2 138,tanδ=0.005 8,kp=0.61,Qm=1 275,d33=380 pC/N和TC=205℃。     

The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n=0, 1, 2 and 3)

In this study, the annealing effect on structural, electrical and optical properties of CuIn_2n+1S_3n+2 thin films (n=0, 1, 2 and 3) are investigated. CuIn_2n+1S_3n+2 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS₂ and CuIn₃S₅ (n=0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn₅S₈ and CuIn₇S₁₁ (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2–3.1, optical thicknesses 250–500 nm, coefficients of absorption 10⁵ cm^?1, coefficients of extinction <1, and the values of the optical transitions 1.80–2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple–DiDomenico and Spitzer–Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants.     

Effect of rhenium doping on various physical properties of single crystals of MoSe2

Effect of rhenium doping is examined in single crystals of MoSe₂ viz. MoRe_0.005Se_1.995, MoRe_0.001Se_1.999 and Mo_0.995Re_0.005Se₂, which is grown by using the direct vapor transport (DVT) technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials.     

(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究

研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i 对 Sn4 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2 O5晶界缺陷势垒模型