衬底温度和溅射偏压对ZnO:Al透明导电膜结构和光电特性的影响

利用射频磁控溅射法在有机薄膜衬底和7059玻璃衬底上制备出了具有良好附着性的低电阻率的 ZnO:Al透明导电膜。研究了薄膜的结构和光电特性与衬底温度的关系,薄膜为多晶纤锌矿结构,垂直于衬底的 c 轴具有[002]方向的择优取向,薄膜的最低电阻率分别为 1.01×10–3ù·cm 和 8.48×10–4ù·cm,在可见光区的平均透过率分别达到了72%和 85%。并研究了溅射偏压对有机衬底 ZnO:Al 薄膜结构及光电特性影响,最佳负偏压为 60 V。     

宽带隙立方氮化硼薄膜制备

报道了用偏压调制射频溅射方法制备宽带隙立方氮化硼 ( c- BN)薄膜的实验结果 .研究了衬底负偏压对制备c- BN薄膜的影响 .c- BN薄膜沉积在 p型 Si( 10 0 )衬底上 ,溅射靶为六角氮化硼 ( h- BN) ,工作气体为 Ar气和 N2 气混合而成 ,薄膜的成分由傅里叶变换红外谱标识 .结果表明 ,在射频功率和衬底温度一定时 ,衬底负偏压是影响 c-BN薄膜生长的重要参数 .在衬底负偏压为 - 2 0 0 V时得到了立方相含量在 90 %以上的 c- BN薄膜 .还给出了薄膜中的立方相含量随衬底负偏压的变化 ,并对 c- BN薄膜的生长机制进行了讨论     

宽带隙立方氮化硼薄膜制备

报道了用偏压调制射频溅射方法制备宽带隙立方氮化硼(c-BN)薄膜的实验结果.研究了衬底负偏压对制备c-BN薄膜的影响.c-BN薄膜沉积在p型Si(100)衬底上,溅射靶为六角氮化硼（h-BN）,工作气体为Ar气和N2气混合而成,薄膜的成分由傅里叶变换红外谱标识.结果表明,在射频功率和衬底温度一定时,衬底负偏压是影响c-BN薄膜生长的重要参数.在衬底负偏压为-200V时得到了立方相含量在90%以上的c-BN薄膜.还给出了薄膜中的立方相含量随衬底负偏压的变化,并对c-BN薄膜的生长机制进行了讨论.     

负偏压对磁控溅射Mg_2Si薄膜的影响

采用直流磁控溅射加负偏压方法和退火工艺制备了Mg_2Si半导体薄膜,研究了不同负偏压对Mg膜的沉积速率、Mg_2Si薄膜结构以及电阻率的影响。结果表明,随着负偏压的增大,因压实膜层和二次溅射效应,Mg膜的沉积速率越来越小;在未加负偏压时,Mg_2Si薄膜的衍射峰最强、样品表面平整致密,当衬底加上负偏压后,Mg_2Si衍射峰都有所减弱,样品表面变得凹凸不平;当负偏压达到–150 V时,表面已呈现明显的熔融状态,表明负偏压对Mg_2Si薄膜的晶体结构没有有益影响。Mg_2Si薄膜的电阻率随着所加负偏压的增大先减小后增大,并在–90 V时达到最小值。     

有机衬底和玻璃衬底ZnO:Al透明导电膜的结构及光电特性对比研究

讨论了在低温条件下制备的ZnO∶Al薄膜的结构、表面形貌和光电特性,对聚酰亚胺(Polyimide,PI)和玻璃两种不同衬底的薄膜进行了比较研究。两种不同衬底的薄膜均为多晶膜,具有六角纤锌矿结构,最佳取向均为(002)方向,衬底温度从室温到210℃时,制备的薄膜密度变化范围为4.6～5.16g/cm3。在柔性衬底和玻璃衬底上制备的薄膜最低电阻率分别为5.3×10-4Ω·cm和5.1×10-4Ω·cm,薄膜在可见光区的平均透过率分别达到了72%和85%,讨论了两种衬底薄膜电学特性的稳定性。     

衬底负偏压及溅射功率对SiO_2/Cu薄膜形貌的影响

采用射频磁控溅射镀膜技术,分别以不同的衬底负偏压和射频溅射功率下在p型Si(100)基片上制备了SiO2/Cu薄膜。用原子力显微镜(AFM)对薄膜的表面形貌进行扫描分析,实验结果表明,衬底负偏压和射频溅射功率对SiO2/Cu薄膜的表面形貌都有显著的影响。衬底负偏压在0～15 V内,薄膜表面颗粒尺寸和均方根粗糙度都随着衬底负偏压的增大呈减小的趋势,而溅射功率在100～200 W内,薄膜表面颗粒尺寸和均方根粗糙度都随溅射功率的升高呈增大的趋势。成膜初期是层状生长模式,后期为岛状生长模式,整个成膜过程是典型的层岛生长模式。     

衬底负偏压对Ni-Mn-Ga形状记忆薄膜成分及形貌的影响

采用能谱仪(EDS)和原子力显微镜(AFM)对不同衬底负偏压下射频磁控溅射法制备的Ni-Mn-Ga形状记忆薄膜进行了成分和形貌的分析.研究发现:当衬底负偏压在5～30V范围变化时,薄膜中的Ni含量随偏压的增加呈先减少后增加的趋势,在偏压为10V时,达到最小值52.84％(摩尔分数,下同).Ga含量的变化趋势恰好与Ni相...     

溅射功率对Zr,Al共掺杂ZnO薄膜结构和性能的影响

室温下,采用直流磁控溅射法,在载玻片衬底上制备出了Zr,Al共掺杂ZnO(AZZO)透明导电薄膜。研究了溅射功率对薄膜的组织结构、表面形貌和光电学性能的影响。结果表明,制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射功率为150W时,薄膜电阻率达到最小值1.66×10–3Ω·cm,在可见光区平均透过率超过93%。     

衬底偏压对HWCVD制备纳米晶硅薄膜结晶性的影响

通过在热丝化学气相沉积(HWCVD)制备纳米晶硅 薄膜过程中施加衬底偏压,研 究衬底偏压对HWCVD制备纳米晶硅薄膜结晶性能的影响。利用拉曼(Raman)光谱,X射线 衍射(XRD)和扫描电子显微镜(SEM)对所制备的纳米晶硅薄膜的结构性能进行分析。结果表 明,与未施加衬底偏压的薄膜相比,当衬底偏压为－300V时,薄膜 的晶化率由42.2%升高至 46.2%;当衬底偏压升高至－600V时,晶化率 又降至40.6%;未施加衬底偏压与施加－300V 偏压的纳米晶硅薄膜表面由长约200nm、宽约100nm的晶粒构成,－600V衬底偏压的薄 膜表面晶粒尺寸明显变小,并且出现大量非常细小的晶粒。分析产生上述现象的原因,主要 与 高温热丝发射电子、电子在电场作用下加速运动并与反应气体、基团碰撞发生能量传递有关 。     

PECVD法制备纳米硅薄膜材料

采用等离子增强化学汽相淀积（ＰＥＣＶＤ） 法制备了纳米硅薄膜材料， 研究了工艺参数， 如衬底温度、衬底直流偏压、反应气体流量比等对薄膜性能的影响。采用椭圆偏振光谱和有效介质近似法分析了薄膜结构     

TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

CrystallineTiO2 thin films were prepared by DC reactive magnetron sputtering on indium--tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/TiOz/ITO. The measurement of the I—V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.     

Growth of ITO thin films on polyimide substrate by bias sputtering

Transparent conducting indium tin oxide thin films were deposited on polyimide substrates by RF bias sputtering of ITO target. The influences of bias voltage on the structural and electrical properties of the films were investigated. In order to correlate the material characteristics with the plasma parameters during sputtering, we employed Langmuir probe and optical emission spectral studies. The films deposited onto positively biased substrates were poorly crystalline. An improvement in crystallinity was observed with increase in negative bias. The films deposited at a bias voltage of ?20 V showed a preferred orientation in the [1 1 1] direction and has minimum resistivity compared to films grown at other biasing conditions. The measured plasma parameters were correlated to the film properties. The ITO films thus grown have been used as the channel layer for the fabrication of thin film transistor.     

ITO薄膜厚度和含氧量对其结构与性能的影响

在玻璃衬底上用直流磁控溅射的方法镀制ITO透明半导体膜,采用X射线衍射技术分析了膜层晶体结构与薄膜厚度和氧含量的关系,并测量了薄膜电阻率及透光率分别随膜厚和氧含量的变化情况。以低氧氩流量比(1/40)并控制膜厚在70nm以上进行镀膜,获得了结晶性好、电阻率低且透光率高的ITO透明半导体薄膜,所镀制的ITO膜电阻率降到1.8×10–4?·cm,可见光透光率达80%以上。     

4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes

Indium–tin-oxide (ITO), Ni/ITO and Ni layers were deposited onto glass and/or SiC substrates by DC sputtering under different deposition conditions. SiC-based metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors were also fabricated using these materials as contract electrodes. It was found that ITO film deposited without oxygen gas could provide us a better optical property and a better electrical property. It was also found that the dark current of the ITO/SiC MSM UV photodetector was extremely large. Furthermore, it was found that the insertion of a 10 nm Ni layer could significantly reduce the dark current. It was also found that the photo-current to dark current contrast was more than 3 orders of magnitude with a 5 V applied bias for the SiC MSM UV photodetector with 10 nm Ni/90 nm ITO contact electrodes. With an even larger 40 V applied bias, the photo-current to dark current contrast could almost reach 4 orders of magnitude.     

工艺条件对柔性衬底ITO薄膜光电性能的影响

采用直流磁控溅射法在柔性衬底上镀制ITO透明导电薄膜,全面研究了薄膜厚度、氧气流量、溅射速率、溅射气压和镀膜温度等工艺条件对ITO薄膜光电性能的影响。结果表明,当膜厚大于80nm、氧氩体积比为1∶40、溅射速率为5nm/min、溅射气压在0.5Pa左右、镀膜温度为80～160℃时,ITO薄膜的光电性能较好,其电阻率小于5×10–4?·cm、可见光透光率大于80%。     

直流磁控溅射法制备本征ZnO薄膜及光伏应用研究

采用直流磁控溅射法制备了ZnO薄膜,研究了沉积过程中变换氧分压对薄膜光电性能的影响.采用XRD、紫外可见光分光光度计及AFM等方法对薄膜的结构和光电性质进行了表征.结果表明,ZnO薄膜在可见光范围内的透过率可达88％,并且随着氧分压的增大,薄膜的透过率也增大;制备出的ZnO薄膜表面粗糙度为0.41 nm.在glass/ITO/CdS/CdTe结构的太阳电池中,将本征ZnO薄膜作为高阻层加入到ITO与CdS之间,电池的开路电压和填充因子有明显的提高,加入高阻层之后,电池的转换效率最高可达13.6％.     

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

Silicon oxynitride films have been deposited on Si substrates at 200 °C by a remote-plasma-assisted process in a RF-plasma CVD reactor using Si(OC₂H₅)₄ (TEOS) as a precursor and nitrogen as gas ambient. During deposition the Si substrates were biased with negative voltages of −120 and −600 V or were under no DC bias and the influence of this voltage on the film properties has been considered. Film parameters, such as density, chemical bonds, refractive index, composition, oxide and interface charge densities of the deposited dielectric films have been estimated by analysis of the results from the infrared (IR) spectroscopy, spectral ellipsometry (SE) and capacitance-voltage (C-V) measurements. The IR and SE results have proven the films are oxynitrides of silicon with predominantly oxide network. The analysis of the capacitance-voltage characteristics has shown that the dielectric charge densities increase with increasing DC bias but they remain considerably low in comparison to that for a standard SiO₂/Si structure before any annealing steps.     

ZnO:Ga透明电极LED的制备及性能分析

基于本实验室的实验条件,采用射频磁控溅射、等离子干法刻蚀等技术成功制备出具有ZnO∶Ga(GZO)透明电极的LED芯片。实验研究了相同工艺条件制备的ITO透明电极LED芯片和GZO透明电极LED芯片,对比实验结果表明GZO薄膜沉积工艺简单,其器件性能与ITO电极LED相当。相同条件下制备的GZO薄膜可见光波段透过率约90%,而ITO仅为75%。实验室制备的LED器件均具有较高的阈值电压,一方面p-GaN与ZnO的禁带宽度相差4.13 eV,接触势垒大,另一方面器件制备过程中的等离子体损伤薄膜表面和器件性能。     

ITO薄膜的制备及其光电特性研究

采用直流磁控溅射法,分别用ITO陶瓷靶、In-Sn合金靶,在玻璃基片上镀膜。研究ITO透明导电膜其膜厚、靶材、溅射气压和溅射速率等工艺对光电特性的影响。结果表明,采用陶瓷靶镀膜要比合金靶效果好,膜厚70nm以上、溅射气压0.45Pa和溅射速率23nm/min左右为最佳工艺条件,并得到了ITO薄膜电阻率1.8×10–4Ω.cm、可见光透过率80%以上。     

Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Niobium doped indium tin oxide (ITO:Nb) thin films were fabricated on glass substrates by RF magnetron sputtering from one piece of ceramic target material at room temperature. The bias voltage dependence of properties of the ITO:Nb films were investigated by adjusting the bias voltage. Structural, electrical and optical properties of the films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), UV–visible spectroscopy, and electrical measurements. XRD patterns showed a change in the preferential orientations of polycrystalline crystalline structure from (222) to (400) crystal plane with the increase of negative bias voltage. AFM analysis revealed that the smooth film was obtained at a negative bias voltage of -120 V. The root mean square (RMS) roughness and the average roughness are 1.37 nm and 1.77 nm, respectively. The films with the lowest resistivity as low as 1.45×10⁻⁴ Ω cm and transmittance over 88% have been obtained at a negative bias voltage of −120 V. Band gap energy of the films, depends on substrate temperature, varied from 3.56 eV to 3.62 eV.