机载定向能武器反导概念研究

首先介绍了定向能武器的分类和国外主要机载激光武器项目的发展状况,然后分析了激光武器的特点、组成,列举了机载激光武器应用的关键技术和主要性能指标。最后,基于以上研究,提出了机载激光武器反导火控系统的需求分析,为机载定向能武器反导的火控系统设计提供了基础。     

美国高能激光武器的发展及其面临的挑战(下篇)

首先介绍了美国高能激光武器的发展战略和高层技术路线(上篇)。然后分别评述了近一年来机载战区激光武器,战术高能激光武器和机载战术激光武器,天基激光武器,地基激光反卫星武器和舰载激光武器取得的重大进展,分析和讨论了它们面临的技术挑战和可能采取的对策(下篇)。     

美国高能激光武器的发展战略(上篇)

首先介绍了美国高能激光武器的发展战略和高层技术路线(上篇)。然后分别评述了近一年来机载战区激光武器、战术高能激光武器和机载战术激光武器、天基激光武器、地基激光反卫星武器和舰载激光武器取得的重大进展,分析和讨论了它们面临的技术挑战和可能采取的对策(下篇)。     

美国激光武器发展分析

介绍了激光武器的主要特点,从激光器基础技术、车载高能固体激光武器技术、舰载激光武器技术、机载激光器技术等方面分析了美国激光武器的发展历程以及装备的研制、改进情况,探讨了美国在天基、机载、车载、地基、舰载等平台的激光武器研制计划及在一些关键技术方面取得的突破,基于上述分析总结归纳了美国激光武器的发展趋势。     

军事光电动态

机载反导激光武器研究美国开展机载反导弹激光武器的研究。美国军方人员和政府科学家说,美国政府正在开展两项机载激光武器的研究,这种武器可从远距离击中“飞毛腿”这类战术弹道导弹。     

以色列机载激光武器发展及试飞特点研究

机载激光武器作为颠覆性作战力量是各国竞争焦点,相比美国、前苏联采用大型运输机对其进行演示验证试飞,以色列2021年采用塞斯纳208B小型民用飞机进行演示验证试飞,特点鲜明。为推动机载激光武器试验技术的发展,对以色列机载激光武器发展诱因、研究现状和规划、飞行试验特点和启示进行深入的研究,结果表明以色列国土防御面临的火箭弹饱和攻击、集群无人机攻击压力是其激光武器发展的实际需求,本次飞行试验是其30余年激光武器系统持续研究的成果,采用了光纤激光器,武器系统重量约1.5 t,全部由储能电池供电,主要解决了大系统闭环验证问题,但缺少对激光能量的定量测量与分析,预计后续会有持续性飞行试验,同时研究给出了应适时、选择合适试验机、循序渐进开展机载激光武器飞行试验的建议。     

“机载激光试验台”现状及实战应用困境浅析

从"机载激光试验台"发展历程和最近美、德学者对"机载激光试验台"实战效应的评估结果上看,机载激光武器在反导、反卫上具有良好的应用前景,但真正投入实战尚需时日。基于对最新动向和实验结果的认识,指出了当前影响机载激光武器远程打击能力的主要因素。     

机载激光武器回顾与发展

鉴于美国对弹道导弹"多层防御"体系建设的日益重视,从发展历程、发展现状和未来规划三部分,详细介绍了作为弹道导弹"多层防御"体系重要组成部分的机载激光武器的研制进展情况,以期为读者提供机载激光武器过去、现在、将涞三方面全方位的发展信息,同时还分析了机载激光武器在研制过程中所遇到的包括技术实现和经费等在内的一些困难,希望对我国该领域的发展起到一定的参考作用.     

机载激光武器仿真系统与分析

在分析机载激光武器(ABL)战技术指标和作战过程的基础上,建立了机载激光武器仿真系统,该系统由弹道导弹、载机、测距激光、跟瞄系统、激光大气传输和高能激光毁伤评估模块组成。重点研究了机载激光武器的建模,包括测距激光探测概率计算、复合轴跟瞄系统设计、大气对激光造成的衰减和扩散以及高能激光毁伤计算等。最后,搭建了仿真系统进行反导拦截试验,从攻防两方面对影响机载激光武器毁伤效果的主要因素进行了分析,并给出了仿真结果。该仿真系统可以为机载激光武器反导效能的分析评估提供平台和依据。     

机载激光武器技术发展探讨

美国的ABL系统是一个集成了大气补偿技术的兆瓦级机载激光武器系统,ABL的设计目标是击毁敌方的弹道导弹。本文对ABL的作战使用方法、系统组成以及主要关键技术进行了介绍,分析了其发展过程中遇到的技术困难,探讨了我国机载激光武器的发展思路。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its