基于3×3耦合器的光纤陀螺信号解调算法

采用3×3耦合器构成非互易结构的开环光纤陀螺,具有灵敏度高、测量范围大等优点.信号检测在光纤陀螺系统中占有非常重要的地位,其解调精度的大小直接影响光纤陀螺的分辨率.根据使用3×3耦合器的开环光纤陀螺输出信号模型的特点,采用一种新的信号解调算法,可以准确解调任意动态范围的输入,克服在工作点附近灵敏度低的缺点,改善被测信号的精度.实验结果表明,算法能快速、准确解调被测物理量.     

基于3×3耦合器的光纤陀螺信号解调算法

采用3×3耦合器构成非互易结构的开环光纤陀螺，具有灵敏度高、测量范围大等优点。信号检测在光纤陀螺系统中占有非常重要的地位，其解调精度的大小直接影响光纤陀螺的分辨率。根据使用3×3耦合器的开环光纤陀螺输出信号模型的特点，采用一种新的信号解调算法，可以准确解调任意动态范围的输入，克服在工作点附近灵敏度低的缺点，改善被测信号的精度。实验结果表明，算法能快速、准确解调被测物理量。     

一种新型光纤光栅传感器解调系统

选择线性滤波法解调光纤光栅(FBG)传感信号,实现传感光栅Bragg波长微小偏移的实时检测.利用单片机取代PC机,有效实现了系统的小型化.采用锁相放大电路和24位∑-Δ高精度A/D转换模块采集有用信号,提高系统精度和动态范围.使用USB接口模块存储和传输数据,使解调系统特别适合现场测量和野外作业的要求.设计出了一种新型FBG传感器解调系统,通过实验和数据验证了该系统高精度、便携带的特点.     

压电陶瓷在光纤光栅传感解调中的应用

光纤光栅(FBG)传感以其强大的优越性受到了社会的广泛关注,波长编码信号解调是实现光纤光栅多参量、多点分布式传感网络的关键技术.针对几种典型的光纤光栅解调方法做了简单介绍,重点分析了压电陶瓷在干涉解调系统中的调相测量作用.通过改变干涉系统的臂长差来产生一个动态的干涉信号,使干涉信号在时域上获得延伸,将包含被测传感信息的波长信号转变成相位信号;并用非平衡Mach-Zehnder干涉解调系统检测了应变信号,取得了较好的实验效果.实验测得系统的相位检测灵敏度为0.82 (° )/με,可用于静态应变和动态应变的检测.     

光纤传感器闭环工作点控制检测方法的改进

闭环工作点控制是干涉型光纤传感器的一种简单有效的信号检测方法.在传统闭环工作点控制检测方法的基础上,对信号解调算法进行了改进,从而扩大了系统的动态范围,并提高了检测的速度和精度.对新算法的解调误差进行了详细的理论分析与仿真,得出了最大可检测信号与工作点允许变化的范围相互制约的结论.为了验证新算法,搭建了简单的Mach-Zehnder干涉仪系统,并编写了实时的数据采集与处理程序,对压电陶瓷(PZT)调制器产生的模拟信号进行了检测.实验结果证实了该算法的有效性.     

Lab VIEW实现光纤光栅传感干涉解调技术的研究

结合虚拟仪器技术和光纤光栅传感技术,自行设计了一套光纤光栅传感解调系统.系统采用了基于迈克尔逊干涉技术的解调方法,将包含被测应变信息的FBG波长信号转变成相位信号,通过以Lab VIEW为核心的虚拟仪器系统检测相位的变化,从而得到被测应变的大小.该干涉解调系统避开了传统解调系统受电磁干扰和环境等方面的影响,因此使得测量精度有了很大的提高.虚拟仪器系统可用于静态应变和动态应变的检测,具有高分辨力、大测量范围的特点.     

基于Lab VIEW的FBG传感解调技术的研究

结合虚拟仪器技术和光纤光栅传感技术,自行设计了一套光纤光栅传感解调系统.系统采用了基于迈克尔逊干涉技术的解调方法,将包含被测应变信息的光纤布喇格光栅(FBG)波长信号转变成相位信号,通过以Lab VIEW为核心的虚拟仪器系统检测相位的变化,从而得到被测应变的大小.该干涉解调系统避开了传统解调系统受电磁干扰和环境等方面的影响,因此使测量精度提高.虚拟仪器系统可用于静态应变和动态应变的检测,具有高分辨力、大测量范围的特点.     

基于偏振模干涉的光纤光栅动态应变解调系统

基于保偏光纤中正交偏振模干涉,提出了一种简单、新颖的光纤光栅动态应变解调系统,并且通过实验证实了该方案的可行性。该解调系统光学核心部分仅由一段带有反射镜的高双折射光纤和一个光纤起偏器构成。实验中动态应变解调分辨率达到了 ,频率范围为0.1Hz~7.9kHz微纳振动幅度信号获得了保真拾取。实验表明,该系统适合宽频率范围、微纳幅度的动态应变检测,为光纤光栅传感提供了一种简单、经济、适用范围更广的解调方案。     

光纤法-珀非扫描式相关解调系统分析

为了提高解调精度,时间一致性和稳定性及降低仪器成本。利用非扫描式相关解调原理,设计了光纤法珀解调系统并进行了实验研究。建立光纤法珀解调系统的光学模型,进行了光学特性分析和参数优化;设计了光学系统和硬件解调系统。同时由于系统中存在大量背景光谱噪声、线性光分布不均匀及光纤端面的反射,导致不能准确检测出相关信号的极大值,为此提出了一种信号修正算法,能有效滤除噪声,提高了仪器的解调精度。实验结果表明:测量范围为10-40μm,分辨率为8nm,稳定性达到了7nm。该仪器能实现对传感器腔长的实时测量,且测量精度高、稳定性和一致性好。     

基于光纤光栅地震检波解调系统的微弱信号检测电路设计

研究了并设计了应用于光纤光栅地震勘探系统的光电检测电路。宽带光源经光纤光栅传感器反射回来的布拉格信号波很微弱,这就对微弱信号的检测提出了一个很大的难题,也影响着整个地震勘探解调系统的检测精度。在对一般电路设计的思路基础上,研究和设计了可探测微弱信号的光电转换电路。经过实验证明,此电路的噪声仅为0.19 mV,从而提高了系统的解调精度和速度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its