以用户体验为核心的移动广告创新模式

移动广告是移动互联网发展的重要盈利模式，国内外移动广告市场呈现快速增长的势态，未来，将围绕用户关系开展一系列探索与创新，其关键在于深化用户体验。     

移动应用商店广告模式探讨

文章首先分析移动应用商店引入广告模式的必要性，然后对国内外各种典型应用商店引入广告模式的发展分别进行阐述，最后对国内运营商移动应用商店引入广告服务的方式提出建议。     

全球移动广告发展及营销策略分析

移动广告是广告的一种实现形式，是通过移动网络传播的商业信息，旨在通过这些商业信息影响广告受众的态度、意图和行为。移动广告将移动终端和广告有机的结合在一起，突破了平面广告、电视广告和网络广告凭借广覆盖获取营销效果的局限。与传统广告形式相比，移动广告具有交互性强、广告实现形式更加多样化、可实现广告的精确投放和统计等优点。     

移动终端上的广告推广研究

移动广告推广是移动电子商务的关键应用之一,是通过无线通讯信号将广告发送到平板电脑,手机等等移动终端上面以达到的一种推广效果。随着科技技术的不断创新,移动网络和移动硬件的不断更新以及我国用户世界上最大的手机客户群,我国的移动广告推广业务也得到了迅速的发展和普及。因此,发展移动通信技术,对我国至关重要。本次从我国移动通讯技术讲起,讲述我国移动广告推广的发展以及未来趋势。     

移动广告海外起飞

3G时代的到来给移动广告创造了新的发展机遇,依托3G高速数据网络,更多的广告形式如手机电视广告、流媒体广告、游戏内置广告、移动互联网广告等纷纷出现。配合多媒体移动终端的迅速发展,3G时代移动广告的表现能力将会大幅提高,营销模式将会更加丰富,客户门槛将逐步降低,用户习惯将逐渐形成。     

移动互联网广告推荐算法研究

移动互联网的飞速发展为广告投放提供了一种新的应用模式,移动广告已成为移动互联网的主要赢利模式之一.基于用户的细分按需投放广告,是移动广告发展的必然趋势.本文提出了移动互联网广告推荐体系的结构,根据WAP页面的所属类别和关键词,在广告库中选择相匹配的广告进行投送.     

移动广告业务的技术与标准

移动广告实际上就是一种支持互动的网络广告,它由移动通信网承载,具有网络媒体的一切特征,同时由于移动性使得用户能够随时随地接受信息,比互联网广告更具优势。本文介绍了移动广告的发展状况、特点、价值链以及实现技术,并对移动广告业务的技术及标准进行了阐述,最后对移动广告业务的发展进行了展望。     

基于TD-SCDMA Femto的精确位置新业务开发

1引言 随着移动互联网的发展,基于位置的移动互联网应用层出不穷,位置服务成为移动互联网创新的一个重要领域,也成为移动互联网发展的基础。互联网公司开始精确广告市场,通过对客户位置信息的利用,为客户提供本地化的广告内容,并根据客户实时位置提供个性化的商户打折信息,提高广告的投放效果,降低传统的撒网式广告带来的资源浪费。     

移动消息广告发展策略研究

近年来,在经济利益的驱使下,出现了一些企业和个人通过移动消息广告诱骗客户,或不经过用户允许滥发移动消息广告,甚至某些别有用心的人利用移动消息广告进行反动宣传和诈骗等违规和违法行为,严重影响了移动消息广告业务发展。有鉴于此,本文在介绍移动消息广告业务的发展,分析移动消息广告业务中存在问题的基础上,探讨了移动消息广告业务的监管策略。     

移动广告业务（WAD）探析

我国广告市场正呈现一片繁荣景象，2002年广告经营额超过900亿元人民币，电视、报刊、杂志、互联网等媒体在广告市场中各领风骚。近年来移动电话的迅速普及和短信息的普遍应用使移动网络和手机终端成为新一代的信皂传播媒介，因此移动广告业务(简称WAD业务)应运而生。然而令人遗憾的是，目前WAD业务开展效果并不理想。本从WAD业务存在的司题出发，分析WAD业务在广告市场的巨大价值以及对移动业务运营的重要意义，并对今后WAD的业务模式以及发展策略进行深入探讨。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-