Pt/HgInTe肖特基红外探测器的抗辐照特性

碲铟汞Hg3In2Te6是(In2Te3)X-(Hg3Te3)1-X(X=0.5)的化合物,被称为缺陷相化合物.为了研究γ辐照对碲铟汞肖特基红外探测器的影响,首先运用直流平面磁控溅射技术在单晶HgInTe表面形成了Pt/Hg3In2Te6接触,然后对HgInTe晶片及其制作的Pt/HgInTe肖特基器件用不同剂量的γ射线进行辐照,利用I-V测试仪对其辐照前后的I-V特性进行测量,得到了辐照前后的反向漏电流,利用傅里叶红外光谱仪对辐照前后的响应光谱进行了对比,发现在短波方向响应光谱随辐照剂量的增大明显下降,但辐照剂量对于峰值波长的位置和截止波长的位置基本上没有明显影响,同时对辐照前后器件的探测率进行了对比,发现探测率随着辐照剂量的增大有所下降,但下降幅度和器件本身性能有关.最后对γ辐照引起探测器性能变化的辐照损伤机制进行了探讨,认为HgInTe在辐照剂量达到1×108 rad(Si)时,其性能也没有数量级的变化,具有很好的抗辐照特性.     

6H-SiC肖特基二极管的特性研究

采用缓慢氧化-稀释的HF刻蚀-沸水浸泡法(BW法)处理SiC表面,以减少其界面态。首次在100°C以下制备了6H-SiC肖特基二极管,其欧姆接触比接触电阻ρc=5～7×10-3Ω.cm2,理想因子n=1.20～1.25。同时,还制备了P型6H-SiC肖特基二极管,其欧姆接触采用950°C高温合金Al/SiC工艺获得,该样品衬底较大的串联电阻导致其正向压降偏高,理想因子较大。实验表明,BW法不仅能降低合金温度和工艺难度,而且能有效改善器件的电学特性。     

Au/4H-SiC肖特基UV光电二极管的温度特性

采用微电子平面工艺,高真空电子束蒸发金属Au做肖特基接触,多层金属Ni、Ti、Ag合金在背底上做欧姆接触,制作出Au/n-4H-SiC肖特基势垒紫外光电二极管(UV-SBD).测试并分析了在不同温度下该器件的I-V特性及光谱响应特性.实验表明:器件高温下有较低的反向漏电流,正向开启电压下降速度为-1.2 mV/℃;波长响应范围为200～400 nm,在23℃和260℃时,光谱响应峰值分别出现在320 nm和330 nm,每100℃波长红移约4 nm;响应灵敏度随温度升高而降低,平均每100℃降低2倍.     

退火温度对室温沉积的ITO薄膜与p-Si接触性能的影响

室温下用射频磁控溅射法在玻璃和p型单晶硅衬底上沉积ITO薄膜,并对其进行不同温度的退火处理.采用XRD衍射仪测试薄膜结晶性,用紫外-可见分光光度计和霍尔效应测试试样光电性能,用吉时利2400表测试ITO/p-Si接触的I-V曲线,用线性传输线模型测试比接触电阻.研究结果表明:室温下沉积的ITO薄膜与p-Si形成欧姆接触,但比接触电阻较大.退火处理可以进一步优化接触性能,200℃退火后试样保持欧姆接触且比接触电阻下降为8.8×10-3 Ω·cm2.随着退火温度进一步升高到300℃,比接触电阻达到最低值2.8×10-3 Ω·cm2,但接触性能变为非线性.     

基于结终端扩展的4H-SiC肖特基势垒二极管研制

采用高真空电子束热蒸发金属Ni分别作肖特基接触和欧姆接触,离子注入形成结终端扩展表面保护,研制出Ni/4H-SiC肖特基势垒二极管(SBD)。I-V特性测量说明,Ni/4H-SiCSBD有较好的整流特性,热电子发射是其主要的运输机理。实验测量其反向击穿电压达1800V,且反向恢复特性为32ns。     

4H-SiC结型势垒肖特基二极管的制作与特性研究

本文设计制作了两种具有不同结构参数的4H-SiC结型势垒肖特基二极管,在制作过程中采用了两种制作方法：一种是对正电极上的P型欧姆接触进行单独制作,然后制作肖特基接触的工艺过程;另一种是通用的通过一次肖特基接触制作就完成正电极制作的工艺过程。器件制作完成后,通过测试结果比较了采用场限环作为边界终端与未采用边界终端的器件的反向特性,结果显示采用场限环有效地提高了该器件的击穿电压,减小了其反向电流。另外,测试结果还显示采用独立制作P型欧姆接触的工艺过程有效提高了4H-SiC结型势垒肖特基二极管的反向特性,其中P型欧姆接触的制作过程和结果也在本文中做出了详细叙述。     

金属/氮化物肖特基势垒和欧姆接触研究进展

金属 /氮化物肖特基势垒和欧姆接触是蓝紫光光学器件及高温大功率电子器件中的关键工艺。氮化物半导体是一种极性材料 ,表面态密度较低 ,费米能级钉扎效应较弱 ,表面处理能显著影响接触特性。样品表面的沾污和氧化层也会使接触特性显著退化。宽禁带材料的杂质离化能高 ,重掺杂比较困难。深能级陷阱对载流子的俘获效应很强。这些因素都增加了接触的制作难度 ,促使人们寻求新的方案来改进接触特性。文中从金属 /半导体接触的物理模型出发来综述肖特基势垒和欧姆接触的研究进展 ,希望能给器件研究者提供新的思路。     

ITO与p型SiCGe的接触特性

利用直流磁控溅射系统在p型SiCGe和载玻片衬底上沉积ITO薄膜,并研究其ITO与p型SiCGe的接触特性与p型SiCGe制备条件、退火温度、退火时间的关系.结果表明:p型SiCGe制备条件的不同影响着退火使ITO/p型SiCGe的接触由线性变为非线性或者由非线性变为线性;随着退火温度的增加,接触电阻先减小后增加,这是由于退火过程中,接触界面层发生了反应以及接触势垒高度与宽度发生了变化造成的.当退火温度为500℃时,其接触电阻达到最小值,此时ITO薄膜的最高透过率高达90%,方块电阻为20.6Ω/□.     

Performance characterization of InGaP Schottky contact with ITO transparent electrodes

We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94×10⁻³ Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

ITO与Ni和n型GaAs非整流接触的研究

本文报道了氧化铟锡（ITO）分别与金属和半导体的接触电阻率。采用电子束蒸发的手段制备高质量ITO材料。薄膜电阻率为2.32×10-4 Ω?cm,可见光范围透射率为92.8%,禁带宽度为3.804 eV。采用圆点型传输线模型的方法,对ITO/金属和ITO/n型GaAs之间的接触电阻进行了分析。测得ITO与Ni之间最低接触电阻率为2.81×10-6 Ω?cm2 ,ITO与n型砷化镓之间的接触电阻低至7×10-5 Ω?cm2,这是目前所报道的最好的结果。根据以上结果,我们可以确定将ITO应用在GaAs基太阳电池中来提升器件的性能。     

Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×10^–3 Ω cm² upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 18–28% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.     

单层ITO多点电容触摸屏的设计

提出了一种单层ITO结构实现电容式触摸屏的设计方法,该方法可以实现单点/多点触摸功能。讨论了单层ITO玻璃不同图案设计对触摸功能的影响,对产生的原因进行了初步分析,并提出了改善的方法。     

ITO/PTCDA/p-Si薄膜器件的表面和界面特性研究

界面态对于薄膜器件的性能具有非常重要的影响。有米用真空蒸发和溅射沉积的方法制备了ITO／PTCDA／p—Si薄膜器件,并采用X射线光电子能谱（xPs）和Ar^＋溅射技术对其表面和界面电子态进行了研究。结果表明,在ITO／PTCDA／pSi薄膜器件的界面,不仅ITO与PTCDA薄膜之间存在扩散,PTCDA与Si衬底材料之间也存在扩散现象。此外,每种原子的XPS谱表现出一定的化学位移,并以Cls和Ols谱的化学位移最为显著。     

Large area roll-to-roll sputtering of transparent ITO/Ag/ITO cathodes for flexible inverted organic solar cell modules

We fabricated solution-processed flexible inverted organic solar cell (IOSC) modules (10 cm × 10 cm) on roll-to-roll (RTR) sputtered ITO/Ag/ITO multilayer cathodes. By using a pilot-scale RTR sputtering system equipped with mid-range frequency power for dual ITO targets and direct current power for the Ag target, we were able to continuously deposit a high-quality ITO/Ag/ITO multilayer on PET substrate with a width of 700 mm and length of 20,000 mm as a function of Ag thickness. At the Ag thickness of 12 nm, the ITO/Ag/ITO multilayer had a very low sheet resistance of 3.03 Ohm/square and high transmittance of 88.17%, which are better values than those of amorphous ITO film. A strip-type ITO/Ag/ITO cathode was successfully patterned using a RTR wet etching process. Successful operation of flexible IOSC modules on RTR sputtered ITO/Ag/ITO cathodes indicate that the RTR sputtering technique is a promising coating process for fabrication of high-quality transparent and flexible cathodes and can advance the commercialization of cost-efficient flexible IOSCs.     

PDP中ITO膜制作工艺技术的研究

概述了ITO的特性和它在PDP显示中所起的作用.通过大量实验摸索了一套适合实验室制作刻蚀ITO膜的工艺,其中包括涂胶、擦边、曝光、显影、刻蚀等.     

TFT-LCD制程中ITO残留的产生与控制

铟锡氧化物(indiumtinoxide,ITO)作为氢化非晶硅薄膜晶体管液晶显示器(hydrogenated amorphous silicon thin film transistor-liquid crystal display,a-Si:HTFT-LCD)最常用的透明导电材料,其图形与厚度会直接影响到器件的相关性能。本文主要阐述了TFT-LCD生产中由于ITO多晶化所造成的残留问题,并根据产线的情况对这些影响进行了分析,对实际生产过程中出现的问题提出了相应的解决方案。