电信运营级虚拟化运营管理技术探析

为了充分发挥虚拟化技术的优势，必须有一个高效统一的运营管理平台，实现对虚拟化产品的全面管理和科学运营。电信运营商拥有大规模的通信网络基础和IT基础设施，在实现虚拟化平台的大规模公众运营上具有得天独厚的优势。文章首先描述了当前虚拟化运营管理的主要产品及其特点，接着从运营商的角度提出了虚拟化运营管理需要具备的主要功能，最后对虚拟化运营管理的实现及发展进行了分析和展望。     

大数据实验云平台的设计与实现

针对目前大数据实践教学的主要问题,在分析了Open Stack平台与其组件Sahara的特点后,采用Open Stack4J API在该平台上设计并开发了基于虚拟化技术的Hadoop集群实验云系统。通过此实验云平台能够实现学生在线快速申请实验、实施和管理实验的目的,同时教师可以通过该平台方便实现实验管理,为大数据教学提供全新的实践教学方式。     

基于云计算的水文数据共享平台的应用研究

水文数据是研究水问题重要的基础信息,是我国重要的基础性科学数据资源之一。研究云计算现有的特点,结合水文数据规模庞大、分布地域广泛等特点,分析开源性云平台Ha-doop中分布式文件系统HDFS、计算模型Map/Reduce、数据仓库Hive技术,设计基于Hadoop的水文云平台,并解决平台实现过程中服务器虚拟化、大规模异构水文数据存储以及元数据管理等关键性问题。最终使得平台具有安全可靠、易维护和良好的可扩展性的特点。     

云计算环境下的服务器虚拟技术研究

大数据时代,海量数据应运而生,数据的处理除了占有大量的存储空间,还会让计算机系统承受较大的负担。虚拟化技术是云计算技术最为核心的技术之一,虚拟化技术的存在促进了云计算向下一代计算模式的演变。服务器虚拟化技术是核心的虚拟化技术也是云计算的基础在这一环境下,模拟完成计算机所有的真实操作,只需要占用很少的硬件资源就会处理大量的数据,且运行损耗也会显著降低。文章结合云计算技术的特点、主流的虚拟化平台及平台使用的概念、原理到应用进行简要的分析,探讨虚拟化与云计算之间的联系及虚拟化在云计算的环境下的应用原理。     

虚拟化网络中的异常大数据区域挖掘平台设计与改进

受异常大数据区域参数波动大的影响,市面上现存的虚拟化网络异常大数据区域挖掘平台可应用性和稳定性不高,与虚拟化网络连接成功率较低。为此,设计新型虚拟化网络异常大数据区域挖掘平台。该平台由虚拟化网络控制模块、挖掘模块和虚拟层组成。虚拟化网络控制模块利用SDN控制器对虚拟化网络进行控制,保证其中的大数据能够被流畅、安全、稳定地挖掘和传输。挖掘模块先对虚拟化网络控制模块传输来的大数据进行整流和滤波,再利用报警电路挖掘出其中的异常大数据,进而搭建出异常大数据区域,并对其进行完整存储。软件给出虚拟层的功能图,以及平台对异常大数据的挖据代码。经实验验证可知,所设计的平台拥有较高的可应用性和稳定性,且与虚拟化网络连接的成功率较高。     

基于云计算的综合应急管理平台体系架构研究

针对当前综合应急管理平台架构的不足,提出一种基于云计算的综合应急管理平台设计方法,并重点阐述了通用数据、本地共用数据和实时数据的虚拟化存储技术、平台服务层微内核群技术和平台的集成管理与系统可搭建技术,采用设计出的综合应急管理软件平台可以满足多种用户类型、专业化、低成本、定制服务等应用需要。     

基于SAN的分布式卷管理架构及实现

随着SAN存储量的增长,提出了存储虚拟化的管理技术来解决存储管理、异步平台的数据共享、存储系统的可用性和可扩展性等方面的要求。文章主要探讨了存储虚拟化的分类,给出了一个基于SAN的分布式卷管理架构,该架构将操作系统中纵向虚拟存储管理概念扩展到不同磁盘、磁盘阵列的横向虚拟化管理,并在此架构下实现了分布式快照系统,该系统解决了海量数据备份时的I/O带宽问题。原型系统分析表明,新架构可以较好地解决分布式卷管理的问题,在实施数据迁移和数据拷贝时,实现海量数据瞬间完成与瞬间恢复。     

基于云计算的虚拟化数据中心(上)

阐述了云计算如何实现资源虚拟化、如何管理虚拟资源和如何使用云计算平台部署虚拟化数据中心等VDC建设中的关键问题,针对VDC的数据安全、网络安全、虚拟机安全等方面提出了部署建议,提出了云计算的接口标准、设备标准和安全管理规范的内容,并给出了应用被攻击后的响应策略.     

试析VMware vSphere虚拟化技术的运用

互联网技术的发展与普及,推动了大数据技术和云存储技术的发展.对于数据的分析处理水平和网络运维的安全性成为各大运营商研究的焦点.VMware vSphere平台对于互联网大数据分析和软硬件管理水平表现出较大的优势.本文浅析了VMware vSphere虚拟化技术的特点,结合基于VMware vSphere平台技术的运用原则,提出了VMware vSphere虚拟化技术运用方向.     

基于虚拟化平台的校园网建设研讨

分析当前校园网络业务需求、现状和特点,结合当前信息系统发展的“云计算”和“虚拟化”趋势,讨论了校园网络进行虚拟化平台建设的必要性,提出了基于虚拟化平台校园网络建设的建设目标和初步方案,总结了虚拟化平台校园网络建设给校园信息系统带来了信息服务支撑能力的提升。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.