面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器

介绍了一种由商用InGaP/GaAs异质结双极晶体管工艺制成、基于负阻原理的单片压控振荡器,此电路定位于5GHz频段下的无线应用.在实际使用中,除了旁路和去耦电容外,无需外接其他外部元件.测试得到的输出频率范围超过300MHz,为4.17～4.56GHz,与仿真结果非常吻合;相位噪声为-112dBc/Hz@1MHz;在3.3V电源电压下,其核心部分的直流功耗为15.5mW,输出功率为0～2dBm.为了与其他振荡器比较,还通过计算得到了相位噪声优值,约为-173.2dBc/Hz.同时,还讨论了负阻振荡器的原理和设计方法.     

基于0.2μm GaAs PHEMT工艺的压控振荡器IC设计

给出了一个采用0 2μmGaAsPHEMT工艺设计的全集成差分负阻式LC压控振荡器电路,芯片面积为0 52×0 7mm2。采用3 3V正电源供电,测得输出功率约-11 22dBm,频率调节范围6 058GHz～9 347GHz;在自由振荡频率7 2GHz处,测得的单边带相位噪声约为-82dBc/Hz@100kHz.     

低相位噪声CMOS环形压控振荡器的研究与设计

针对个人电脑和通讯系统对频率合成器中振荡器的低相位噪声的要求,对基本的环形振荡器结构进行改进,设计了两种宽带低相位噪声CMOS环形压控振荡器(VCO),在800 MHz振荡频率、1 MHz频偏下,测试的相位噪声分别为-123 dBc/Hz和-110 dBc/Hz.两个VCO的调谐范围分别为450～1 017 MHz和559～935 MHz.     

基于012μm GaAs PHEMT 工艺的压控振荡器IC 设计

摘要:给出了一个采用012μm GaAs PHEMT工艺设计的全集成差分负阻式LC 压控振荡器电路,芯片面积为0152 × 017 mm2 。采用313 V 正电源供电,测得输出功率约- 11122 dBm ,频率调节范围61058 GHz～91347 GHz ;在自由振荡 频率712 GHz 处,测得的单边带相位噪声约为- 82 dBc/ Hz @100 kHz.     

基于0.18μm SiGe BiCMOS工艺的60GHz VCO分析与设计

采用0.18 μm SiGe BiCMOS工艺,设计了一个60GHz的交叉耦合差分压控振荡器(VCO).通过分析传输线的性能,用λ/ 4短路传输线构造谐振回路.在分析VCO相位噪声的基础上,采用噪声滤波技术提高VCO的相位噪声性能.该VCO的工作电压为2.2V,偏置电流为11mA,频率调谐范围为58.377GHz～60.365GHz.当振荡频率为60.365GHz时,1MHz和10MHz频偏处的相位噪声分别为-79.1dBc/ Hz和-99.77dBc/ Hz.     

基于电流复用技术的LC压控振荡器

介绍了一种改进的LC压控振荡器.该电路采用电流复用技术维持有源负阻的相对稳定,有效增大了输出摆幅,同时没有尾电流上混频引入的1/f噪声,大大减小了相位噪声.另外,与常规VCO不同,采用开关阶跃电容结构,在一定程度上增大了可变电容的调节范围.采用TSMC 0.18 μmRF CMOS 1P6M工艺,仿真得到在1.25V基准电压下供电时,可有950～1050 MHz的线性调节范围,在中心频率1 GHz频偏1 MHz时的相位噪声为-129.3 dBc/Hz,功耗为4.1mW.     

基于802.11a/b/g WLAN接收机前端的射频集成压控振荡器设计

为了满足WLAN接收机前端要求,设计了一种基于IEEE 802.11 a/b/g协议的RF零中频接收机第一本振3.846GHz压控振荡器.该振荡器采用TSMC0.25μm RFCMOS工艺实现,利用Hajimiri相位噪声模型对结构进行了优化,具有低相位噪声的特性.通过Cadence Spectre仿真,结果表明文中设计的3.846GHz压控振荡器功耗为10mW,1MHz和3MHz载频处的相位噪声分别为-120dBc/Hz和-131dBc/Hz,调谐电压Vtune在0～2.5V之间变化时,频率可调范围为600MHz,其性能完全符合IEEE 802.11 a/b/g协议的要求.     

宽带低相位噪声CMOS环型压控振荡器的设计与研究

采用一种环型电路结构,设计了一个1.3GHz宽带线性压控振荡器.采用 TSMC 0.18μm RF CMOS 工艺,利用 CadenceSpectreRF 完成对电路的仿真.结果显示,在电源电压Vdd =1.8 V 时,控制电压范围为 1.0～1.18 V,频率的变化范围为800 MHz～2.1GHz,相位噪声为-105 dBc/Hz@1 MHz.很好地解决了相位噪声与调谐范围之间的矛盾.     

卫星电视天线射频电路中LC压控振荡器设计

设计了一款应用于卫星电视天线电路中低功耗、低相噪的宽带单片集成压控振荡器。该振荡器利用PMOS尾电流源和MIM电容阵列结构。在保证调谐范围的前提下,有效地降低了相位噪声。使得该压控振荡器实现了3.384～4.022 GHz频段的覆盖,在中心频率为3.7 GHz时,100 Hz和1 MHz频偏处的相位噪声分别为-90.4 dBc/Hz和-119.1 dBc/Hz,工作电压下为1.8 V,功耗仅为2.5 mW。     

锁相环电路中压控振荡器的分析与设计

本文设计了一个应用于高频锁相环（PLL）系统的负阻LC压控振荡器,在传统LC压控振荡器基础上,通过采用二次谐波滤波技术降低了振荡器的相位噪声,并完成了电路的仿真。仿真结果表明,该压控振荡器的振荡频率在1．9—2．1GHz,其频率调节范围达到200MHz,并且在距中心频率1MHz处其相位噪声为-148．825dBc／Hz...     

A K-band InGaP/GaAs HBT balanced MMIC VCO

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise andwide tuning bandwidth

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO is based on a push-push oscillator topology, which employs InP HBT technology with peak f_T's and f_max's of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 Ω. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeter-wave frequency source applications     

一种应用于NB-IoT芯片的压控振荡器

采用40 nm 1P6M CMOS工艺,研究与设计了一款应用于窄带物联网(Narrowband Internet of Things,NB-IoT)芯片的压控振荡器(Voltage Controlled Oscillator,VCO)。该VCO利用负反馈电路降低输出的相位噪声,通过电容减敏技术降低了输出频率相对于可变电容的敏感度,通过交叉偏置二极管技术提高了VCO增益的线性度。测试结果显示:VCO所需功耗为1.2 mW;当VCO震荡在3.49 GHz时,在偏离3.49 GHz的100 kHz、150 kHz、300 kHz、500 kHz和2.5 MHz的相位噪声的测量值依次为-92 dBc/Hz、-91 dBc/Hz、-100 dBc/Hz、-110 dBc/Hz和-125 dBc/Hz;采用此压控振荡器的NB-IoT发射机输出矢量幅度误差(Error Vector Magnitude,EVM)为7.8%,频谱辐射模板(Spectrum Emission Mask,SEM)和临近信道抑制比(Adjacent Channel Power Ratio,ACPR)均满足3GPP要求。可见,测试结果证明了所提出压控振荡器电路的有效性和实用性。     

A 15/30-GHz Dual-Band Multiphase Voltage-Controlled Oscillator in 0.18- μm CMOS

A multiphase oscillator suitable for 15/30-GHz dual-band applications is presented. In the circuit implementation, the 15-GHz half-quadrature voltage-controlled oscillator (VCO) is realized by a rotary traveling-wave oscillator, while frequency doublers are adopted to generate the quadrature output signals at the 30-GHz frequency band. The proposed circuit is fabricated in a standard 0.18-mum CMOS process with a chip area of 1.1times1.0 mm². Operated at a 2-V supply voltage, the VCO core consumes a dc power of 52 mW. With a frequency tuning range of 250 MHz, the 15-GHz half-quadrature VCO exhibits an output power of -8 dBm and a phase noise of -112 dBc/Hz at 1-MHz offset frequency. The measured power level and phase noise of the 30-GHz quadrature outputs are -16 dBm and -104 dBc/Hz, respectively     

An Integrated 5–2.5-GHz Direct-Injection Locked Quadrature LC VCO

This letter presents an integrated direct-injection locked quadrature voltage controlled oscillator (VCO), consisted of a 5-GHz VCO integrated with injection locked LC frequency dividers for low-power quadrature generation. The circuit is implemented using a standard 0.18-mum CMOS process. The differential VCO is a full PMOS Colpitts oscillator, and the frequency divider is performed by adding an injection nMOS between the differential outputs of complementary cross-coupled np-core LC VCO. The measurement results show that at the supply voltage of 1.8-V, the master 5-GHz VCO is tunable from 4.73 to 5.74GHz, and the slave 2.5-GHz VCO is tunable from 2.36 to 2.87GHz. The measured phase noise of master VCO is -118.2dBc/Hz while the locked quadrature output phase noise is -124.4dBc/Hz at 1-MHz offset frequency, which is 6.2dB lower than the master VCO. The core power consumptions are 7.8 and 8.7mW at master and slave VCOs, respectively     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

一种2.45 GHz低成本微带压控振荡器的设计

为了满足教学和科研的需要,基于负阻原理设计了一款工作于ISM频段2.45 GHz低成本微带压控振荡器。振荡电路采用双电源供电和共基极连接方式,利用双极性晶体管和变容二极管等分立元件制作。借助于ADS软件对电路参数及主要指标进行仿真优化,并进行了实物的加工和测试。实测结果表明,设计的压控振荡器在输入调频电压为0⁶ V时,输出振荡频率覆盖2.46 V时,输出振荡频率覆盖2.4².5 GHz,输出功率大于9.2 d Bm,相位噪声在偏离移中心频率100 k Hz处为-90 d Bc/Hz。该振荡器调谐频带线性度好,输出功率平坦度高。     

一种用于Bluetooth发接器的倍频式VCO

介绍了一种适用于 Bluetooth发接器的 ,可以单片集成的倍频式压控振荡器 ( VCO)。这种 VCO由两部分组成 ,主 VCO的振荡频率是所需本振频率的一半 ,然后采用“注入锁频”原理对主 VCO的振荡频率进行倍频以产生本振信号。主 VCO和倍频电路都使用了片上集成螺旋电感 ,调谐用的变容元件使用 PMOS晶体管实现。经过版图设计和后仿真 ,在 TSMC0 .35 μm数字 COMS工艺 ,3.3V电源电压下 ,该 VCO在 2 .4GHz中心频率附近可以达到的相位噪声指标为 -1 2 5 d Bc/Hz( 60 0 k Hz) ,在输出摆幅为 60 0 m Vp- p时 ,功耗为 2 2 m W。