双波长激光共聚焦生物芯片检测与图像处理

基于共聚焦检测原理,建立了双波长生物芯片检测系统。采用体全息滤光片,利用其反射衍射和带阻滤光特性,无需切换或改变光路,在同一光路中即可实现Cy3与Cy5荧光双波长扫描检测。提出了基于顺序形态变换的生物芯片荧光点阵图像的网格化处理方法,并对Cy3与Cy5荧光试剂点样玻片进行了扫描实验,对实验所得荧光点阵图像进行了网格化处理。实验结果显示,系统的检测灵敏度达到0.1 fluo/μm2,网格化算法简单、有效。     

光纤共焦扫描显微图像渐晕校正的研究

光纤共焦扫描显微镜是一种使用单模光纤代替传统共焦扫描显微镜的针孔来形成点光源与点探测器的激光共焦扫描显微系统。本文在详细地分析了光纤共焦扫描显微镜的双振镜扫描系统产生渐晕原因的基础上,给出了渐晕校正的详细算法,并设计了与扫描采集集成为一体的硬件校正系统。     

生态芯片及其在医学和生物学中的应用

本文阐述了生物芯片的制作原理及杂交信号的检测方法及其在生物医学中的应用。生物芯片的制作工艺主要分两大类：一类是采用在芯片点阵上直接合成寡核苷酸的方法;另一类是用点阵或喷墨打印法将纳升级的微量DNA溶液直接以阵列形式点放并固化在芯片载体上,生物芯片主要通过杂交信号进行检测。对于荧光标记的杂交信号的检测方法,主要有激光荧光扫描显微镜、激光扫描共焦显微镜、带有CCD相机的荧光显微镜、光纤生物传感器等。对于生物素标记的杂交信号的检测方法,主要有化学发光法、光激发磷光物质存储屏法。DNA基因芯片在生物医学中有着重大的应用前景。     

并行共焦显微检测技术及其研究进展

共焦显微术是一种重要的微小物体成像技术,由于具有高精度、高分辨率及容易实现三维重构图像的优势而被广泛应用于微纳三维形貌测量。近年来,并行共焦显微检测技术引起各国专家的广泛关注,该技术将单点扫描变为多路同时并行探测,大大提高了三维检测速度。综述了并行共焦显微检测技术的基本原理,系统论述了近年来国内外在并行共焦显微检测技术方面的研究进展以及作者在这方面的研究。按照实现并行检测的方法对7种并行共焦显微检测技术进行了分类介绍,并指出了各种方法的优缺点。最后总结了目前存在的技术难题,分析了未来的发展趋势,为我国进一步开展此项研究提供技术参考。     

蓝紫光的腔增强空气喇曼光谱

喇曼光谱是一种无损、快速检测物质成分的方法。为了提高监测灵敏度, 对408nm波段半导体激光器的腔增强自发喇曼散射进行了研究。利用输出功率500mW、线宽0.9nm的408nm半导体激光器作激发光, 把激光耦合入共焦球面镜腔, 两面共焦球面镜的反射率分别为96.5%和99.5%, 部分激光返回半导体激光器形成光反馈, 半导体激光器与共焦腔形成共振。对装置的光反馈过程进行了探讨, 并对外腔的模式匹配和频率匹配分别进行了分析。结果表明, 共焦腔内功率达到15W, 功率增强了30倍; 用90°探测构型收集喇曼信号, 完成了空气喇曼信号检测; 1s积分时间, 获得N₂信号900个计数。此共振增强腔大大增强了喇曼散射信号, 有潜力应用于多种气体的在线检测或高灵敏度检测。     

抑制容器荧光干扰的双轴共焦拉曼检测方法

为消除拉曼光谱检测中样品装载容器的荧光背景干扰,利用样品拉曼信号光与容器产生的荧光不共焦的特性,设计了一种双轴共焦的检测光路结构。实验结果表明:来自容器的荧光干扰幅度出现数量级的衰减,拉曼信号光幅度下降了约30%;双轴共焦拉曼检测方法能够避免传统共轴共焦检测方法中拉曼信号光和荧光混合接收的问题,解决了荧光干扰对拉曼信号动态检测范围的限制,实现了对荧光材料容器装载样品拉曼信号的有效检测。     

具有高空间分辨力的双极性绝对式差动共焦检测方法

提出一种用于超精密三维微细结构测量的横向光学超分辨、轴向纳米级分辨的绝对式高空间分辨力共焦检测方法,该方法利用超分辨光瞳滤波技术最大程度地改善共焦显微系统的横向分辨力,利用探测器轴向偏置的双探测共焦光路布置和双探测信号归一化差动接受最大程度地改善共焦显微系统的轴向分辨力,最终实现共焦检测系统的高空间分辨力双极性绝对测量.文中以整形环形光横向超分辨为例,初步验证了提出的高空间分辨力差动共焦扫描检测方法的有效性.实验表明:当入射激光束波长λ=632.8nm,测量物镜数值孔径取NA=0.85,ε=0.5,μM=6.95时,整形环形光瞳式差动共焦传感器的横向分辨力优于0.2μm,轴向分辨力优于2nm.     

一种用于太赫兹共焦扫描图像复原的复合算法

THz 共焦扫描成像中,由于太赫兹激光器不可能恒定输出和采集信号微弱等原因,导致成像质量有待提高;数字图像复原方法是一种节约系统成本和空间的有效手段。文中提出了一种用于太赫兹共焦扫描图像复原的基于两步背景抑制、中值非局部均值(MNLM)滤波和灰度变换的复合方法,并将此方法用于真实太赫兹图像,与中值滤波、开运算和非局部均值滤波相比较。真实图像处理结果表明,此方法具有较好的复原效果,尤其是图像对比度有明显提高。     

微流控芯片核酸分析系统及其精准医学应用

目前临床病原菌检测主要依赖细菌培养的方法,该方法周期长、准确性低,且容易产生交叉污染和人体感染等问题。提出微流控芯片核酸恒温扩增分子诊断技术,开发离心进样空气隔离微流控芯片和共焦面成像光学检测系统,采用旋转扫描信号采集方法和薄层空气浴流动加热比例-积分-微分温控方法对呼吸道病原菌进行实验和分析。研制恒温扩增微流控芯片核酸分析系统,将系统检测灵敏度提高至10copies,降低样品试剂消耗量至0.94μL,在45min内能够同时进行多种病原菌指标的并行分析鉴定。通过100例临床样品实验测试,得到所提系统与传统聚合酶链反应所得结果的总符合率大于98%,可满足医院、社区医疗、乡镇卫生诊所等低成本精准医疗应用的需要。     

条码识别系统中的光电信号处理

条形码技术是在计算算机应用实践中产生和发展起来的自动识别技术。本文介绍一种全息光盘条形码阅读器，它具有扫描速度高、景深大、扫描光照度强、扫描距离远、多方位万向扫描等特点，因而能广泛应用于对自动化程度要求比较高（如超级市场的ＰＯＳ系统）或者适合无人操作的（如集成电路芯片生产过程中的质量检验）场合。此外，它还可应用于铁路、公路交通运输管理中。本文主要介绍全息光盘条形码阅读器的光学系统结构；光电探测的设     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its