浅析数控技术在机械制造中的应用

随着科学技术不断发展,数控技术作为较高科技性能的技术也在不断进步之中,将数控技术应用到机械制造行业中,是提高我国工业化技术含量的手段之一。现阶段,我国机械制造行业的规模在世界上占据着较大份额,但是产品的质量却不能达到国际标准,技术含量不过关,所以我们应加强数控技术在机械制造行业的有效应用,提升机械制造产品的性能及质量。本文简单分析了我国机械制造行业的现状,数控技术的特点以及数控技术在机械制造行业中的应用,最后对我国机械制造行业中数控技术的发展趋势做了阐述。     

机械制造中数控技术的有效应用探讨

随着科学技术的不断进步,数控技术在机械制造中的应用也更加广泛,并取得了很大的发展与进步,如何采用数控技术进行更好的工作,成了现代化机械制造行业竞争的主要内容,很多制造商都十分重视数控技术在机械制造中的应用,利用数控技术的优点将机器的安全性与功能提升了全新的层次,只有这样才能在激烈的市场竞争中发挥出更好的优势。本文就对机械制造中数控技术的应用进行分析。     

机械制造中数控技术应用分析

数控技术属于国内机械应用行业当中具备广泛应用前景和发展迅速的一种综合性的高新技术,紧紧围绕数控技术的机械制造装置是评价一个国家先进技术发展水平高低的一个关键性指标,而是不是可以在实践中有效地应用数控技术,这直接影响到国内工业的长远发展.为此,本文阐述了机械制造业的发展现状,机械制造领域中数控技术的应用,以及在机械制造领域中数控技术的发展趋势.     

数控技术在机械制造中的应用与发展

近年来,我国的科学技术取得了很大的进步,社会也得到了很大的发展,我们对数控技术的要求在不断提高。数控技术在机械制造中的应用与发展广受人们的关注。对数控技术的掌握和将数控技术应用于机械制造中,对整个社会的生产具有重要意义,本文对数控技术在机械制造中的应用与发展进行探讨。     

探讨数控技术在机械制造中的运用

数控技术作为机械制造中的有效加工技术,不仅为当前的机械制造行业带来了先进的生产方式,而且还实现了机械制造的集成化、柔性化以及自动化生产。文章分析了数控技术在机械制造领域中的运用,从而更好地提高我国机械制造的水平,有利于经济的长远发展。     

浅谈数控技术在机械制造中的应用

在经济持续发展中,我国的机械制造与发达国家相比,在机械设备的功能、效率、质量与可靠性等方面都较为落后。然而在这个计算机技术飞速发展、数字化全面普及的时代,数控技术已经逐渐开始左右机械制造业的发展前进方向。越来越多的人开始重视数控技术在机械制造中的应用,为了提升机械制造的水平、制造机械的效率、产品质量、功能与安全性,数控技术也在不断地发展与创新,致力于为我国提供赶超发达国家的机会。     

机械制造中数控技术应用探究

在机械制造中应用数据技术,就是改变人力控制机械制造的思路,改由计算机控制机械制造的流程,这种技术的应用有非常重要的意义。由于这种技术能够全面提高机械制造的质量,因此它目前被广泛的应用,未来人们还将用优化数控技术的方式优化机械制造生产的工艺。     

浅析机电一体化数控技术在机械制造中的应用

近年来,我国在工业生产领域取得了较大的进步,在诸多领域与行业中,均普遍采用现代化的机械设备,不仅彻底转变了传统的人工生产模式,同时也为企业的发展提供了新动能。正是由于上述情况的存在,使得机械制造业有了良好的发展前景。为保证机械制造业能够获得顺利、快速的发展与进步,目前我国已经开始推广机电一体化数控技术。为此,文中对机电一体化数控技术在机械制造中的应用情况进行了论述。     

数控技术在机械制造中的应用探讨

近几年科技的高速发展使得社会全面进入了数字化信息时代,特别是在机械制造业中,数控技术得到了广泛使用,在提高作业的生产效率的同时也带动了经济的增收。因为数控技术就是将电子技术和计算机技术以及数控技术三者完美地结合在一起,然后通过数字程序编制来进行控制机械运作,这样一来就很好的提升了机械运作的准确度和可靠性。文章通过分析目前我国机械制造业的现状和数控技术的特点,并且探讨了数控技技术在机械制造业中的实际应用。旨在希望通过文章的简单解说和分析,为相关的机械制造行业提供一些有价值的参考意见。     

数控机床的分类与发展趋势

作为高新技术、机电一体化的产品——数控机床是一种自动化机床,具有灵活性、通用性。它综合应用了电子计算机、自动控制、伺服驱动、精密测量和新型机械结构等多方面的技术成果,在机械制造业的各个领域已得到应用。发展数控技术是当前机械制造行业技术改造、技术更新的必由之路。本文着重介绍了数控机床的分类及其今后的发展趋势。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its