基于互补螺旋谐振器的SIW带通滤波器设计

在基片集成波导(SIW)结构中加载了互补螺旋谐振器(CSR),实现了具有超宽带外抑制的带通滤波器。CSR是复合左右手结构的一种,其等效电路与互补开口谐振环(CSRR)的相似,但CSR结构更加紧凑,设计更加灵活。SIW具有与传统金属波导相似的结构特点和分析方法,但它体积更小,且更容易与其它平面电路结合。将两个CSR单元加载到SIW中,会产生一个低于SIW截止频率的通带。调整两个CSR单元的位置,会在通带的两侧分别产生一个传输零点。本文设计的带通滤波器较传统的SIW滤波器体积更小,并且具有更宽的带外抑制。根据测试结果,滤波器的中心频率为7.68GHz,3dB带宽为394 MHz,带内插损最小值为1.91dB,带外抑制在9~18GHz范围内优于30dB。     

Ku波段基片集成波导带通滤波器的设计

设计了一款基于基片集成波导的ku波段卫星通信的带通滤波器。描述了位于SIW内部的金属通孔的等效电路模型,并分析通孔直径、位置等关键参数对滤波器性能的影响。针对基于中心位置的SIW带通滤波器带宽较窄的问题,提出偏置金属通孔SIW带通滤波器的设计方法,从而增大滤波器的带宽。并通过对改进后的基片集成波导带通滤波器的仿真,验证了设计的正确性和方法的有效性。     

LCP柔性HMSAFSIW带通滤波器设计与实现

基片集成波导(SIW)滤波器因具有高品质因数(Q值)、便于平面集成的优点,受到研究人员的青睐.但是,随着频率的不断提高,SIW基板的介质损耗会不断升高.为了克服以上难题,并且进一步缩小滤波器体积,基于柔性LCP基板,设计并实现了一款半模空气隙填充的基片集成波导(HMSAFSIW)带通滤波器.由于HMSAFSIW传输结构...     

基片集成波导带通滤波器的设计与实现

基片集成波导技术使得包括平面电路、接头和矩形波导在内的完整电路可以以平面形式集成在印刷电路板上;首先简要介绍基片集成波导这一新技术,然后把矩形波导带通滤波器的设计方法引入基片集成波导中,设计了一个中心频率为35 GHz,相对带宽为2.7%的基片集成波导带通滤波器,CST的数值计算结果显示该途径是成功的。     

基于基片集成波导的硅微机械滤波器

基片集成波导(SIW)结构是在低损耗的基片上利用金属孔构成的波导结构,具有高品质因数、大功率特性和易于集成的优点,是最近微波电路研究的热点技术.滤波器是微波毫米波电路中最常用的器件,使用SIW可以实现高性能滤波器且保持体积小的优点.     

基于基片集成波导(SIW)的双模带通滤波器

首先介绍了基片集成波导(SIW)这一新技术,并用表面电流理论解释了电磁波在SIW中的传输模式。同时,通过使用凹型过渡和接地共面波导过渡两种转换方式,解决了基片集成波导与微带线的过渡问题,从而解决了滤波器和有源微波电路的集成问题。文章用这两种过渡方式,分别设计了中心频率在5.63GHz和5.45GHz的双模带通滤波器。实验表明:这两种滤波器在通带内的反射损耗S11均优于-21dB,-3dB带宽都在50MHz以上。     

宽带基片集成波导滤波器

滤波器是微波毫米波电路与系统中一个重要的部件.提出了一种CMRC加载基片集成波导( substrate integrated waveguide,SIW)滤波器.该滤波器具有体积小、重量轻、容易加工和集成等优点.滤波器的中心频率为5.3 GHz,相对带宽为36%,中心频率处的插入损耗为1.5 dB,仿真与实验结果吻合良好.     

一种基于SIW毫米波的自均衡带通滤波器

提出了一种4阶SIW自均衡带通滤波器。该滤波器具有面积小、易集成等优点。采用三维仿真软件HFSS对电路进行仿真,仿真结果表明,滤波器中心频率为f₀=36.3 GHz, 带宽为1.2 GHz,在60%的通带范围内,群时延变化小于0.02 ns,满足设计指标要求。     

基于SIW技术的毫米波滤波器研究与设计

基于基片集成波导（substrate integrated waveguide,SIW）结构设计了两款四阶的耦合带通滤波器,使用三维全波电磁场仿真软件HFSS对设计的两款滤波器进行了仿真设计和优化.由仿真结果分析得出,两款滤波器的工作频率均位于毫米波频段.第一款SIW滤波器实现了切比雪夫型响应,中心频率为20 GHz,带宽为2 GHz,通带内的插入损耗低于1.5 dB,回波损耗低于-20 dB,在阻带中对信号的衰减程度可以达到50 dB.第二款SIW滤波器实现了准椭圆函数型的响应,中心频率为29.1 GHz,带宽为300 MHz,通带内的插入损耗低于1 dB,回波损耗低于-20 dB,在通带到阻带的过渡中实现了两个陷波点.仿真结果表明,在毫米波滤波器设计中引入SIW结构,有利于优化滤波器尺寸,得到较好的滤波器性能指标,是毫米波滤波器发展的一个重要方向.     

基于L型槽结构的小型化SIW滤波器

为了解决传统基片集成波导(SIW)滤波器在通信电路中占用空间较大的问题,提出一种新型的开槽方法实现了小型化SIW滤波器.通过在四分之一模基片集成波导(QMSIW)谐振腔的顶层金属板上蚀刻L型谐振槽,利用开槽扰动的模移技术原理,使QMSIW腔的谐振基模被移动到低频处.基于此,设计了一款中心频率为2.6 GHz,相对带宽为...     

Substrate integrated waveguide (SIW) linear phase filter

A planar four-pole linear phase filter centered at 10GHz based on substrate integrated waveguide (SIW) is proposed. The filter is composed of four side-by-side horizontally oriented SIW cavities, which are coupled in turn by evanescent waveguide sections with three direct coupling and one cross coupling between the first and fourth SIW cavities. The SIW cavities are fed by microstrips through coupling slots. A curve-fitting technique is adopted to improve the efficiency of the design process. The measured results are presented and compared with the results simulated by a high-frequency structure simulator. Good agreement between the simulated and measured results is observed.     

Substrate Integrated Waveguide Cross-Coupled Filter With Negative Coupling Structure

Substrate integrated waveguide (SIW) technology provides an attractive solution to the integration of planar and nonplanar circuits by using a planar circuit fabrication process. However, it is usually difficult to implement the negative coupling structure required for the design of compact canonical folded elliptic or quasi-elliptic cross-coupled bandpass filter on the basis of a single-layer SIW. In this paper, a special planar negative coupling scheme including a magnetic coupling post-wall iris and a balanced microstrip line with a pair of metallic via-holes is studied in detail. Two -band fourth-degree cross-coupled bandpass filters without and with source-load coupling using the negative coupling structures are then proposed and designed. The two novel SIW filters having the same center frequency of 20.5 GHz and respective passband width of 700 and 800 MHz are implemented on a single-layer Rogers RT/Duroid 5880 substrate with thickness of 0.508 mm. Measured results of those filters, which exhibit a high selectivity, and a minimum in-band insertion loss of approximately 0.9 and 1.0 dB, respectively, agree well with simulated results.     

Miniaturized Bandpass Filters With Double-Folded Substrate Integrated Waveguide Resonators in LTCC

This paper proposes miniaturized bandpass filters with double-folded substrate integrated waveguide (SIW) resonators using multilayer low-temperature co-fired ceramic (LTCC) technology. Formed by inserting a metal plate with two orthogonal slots into the cavity, the double-folded SIW resonator is used for the circuit size reduction with its footprint about a quarter of the conventional ${rm TE}_{101}$ mode. With LTCC technology, there is more flexibility to organize the cavities of filters because of the 3-D arrangement. The vertically stacked cavities are coupled by “L”- or “U”-shaped slots, and if arranged horizontally, by an inductive window on the common sidewall or a suspended stripline between the cavities. Through experimental measurements and simulations at both the $Ka$- $V$ -bands, it has been demonstrated that the proposed filter has compact sizes and good frequency responses. The area of the fully stacked Chebyshev filter has 88% size reduction in comparison with a three-pole planar waveguide filter, while the vertically stacked quasi-elliptic filter has 74% size reduction in comparison with a four-pole planar waveguide filter.      

Half Mode Substrate Integrated Waveguide (HMSIW) Directional Filter

A double-loop directional filter is described and realized in this work by using a novel guided-wave structure called half mode substrate integrated waveguide (HMSIW), which retains the attractive performances of substrate integrated waveguide (SIW) with a nearly half reduction in size compared to the original SIW version. The demonstrated filter is designed at 12 GHz with less than 3.2 dB insertion loss for a 250-MHz bandwidth, and the minimum insertion loss is 1.5 dB. It presents low insertion loss, high power capacity in planar compact configuration with a standard PCB fabrication process.     

Highly selective bandpass filter based on substrate integrated waveguide

A novel highly selective six-pole elliptic filter based on a substrate integrated waveguide (SIW) is proposed for the first time. The filter is composed of two planar SIW extend doublets. The modular design approach based on cascading small building blocks is adopted to reduce the effect of manufacturing tolerance on the performance of the filter. The proposed filter can produce four finite transmission zeros, and has an excellent stopband rejection characteristic. Measured results are presented and compared with results simulated by a high frequency structure simulator. Good agreement between simulated and measured results is observed.     

Guided-wave and leakage characteristics of substrate integrated waveguide

The substrate integrated waveguide (SIW) technique makes it possible that a complete circuit including planar circuitry, transitions, and rectangular waveguides are fabricated in planar form using a standard printed circuit board or other planar processing techniques. In this paper, guided wave and modes characteristics of such an SIW periodic structure are studied in detail for the first time. A numerical multimode calibration procedure is proposed and developed with a commercial software package on the basis of a full-wave finite-element method for the accurate extraction of complex propagation constants of the SIW structure. Two different lengths of the SIW are numerically simulated under multimode excitation. By means of our proposed technique, the complex propagation constant of each SIW mode can accurately be extracted and the electromagnetic bandstop phenomena of periodic structures are also investigated. Experiments are made to validate our proposed technique. Simple design rules are provided and discussed.     

Realization of dielectric loaded waveguide filter with substrate integrated waveguide technique based on incorporation of two substrates with different relative permittivity

In this paper a new structure based on substrate integrated waveguide (SIW), called incorporated substrate integrated waveguide (ISIW), has been used to implement the dielectric loaded waveguide filter in planar structure. Conventional waveguide filter and dielectric loaded waveguide filter have been realized with SIW and ISIW technique, respectively. The use of ISIW structure has reduced the size of the filter, required precision in designing process and the cost of manufacturing process, at the cost of increasing the losses. Thus, while the size of filter and the cost of manufacturing process reduce significantly, there is no need to build the particular dielectric material as resonator and integration with other microstrip devices will be much easier too. Two different excitation mechanism have been considered to cancel the spurious response in the desired frequency band. The SIW and ISIW filters have been fabricated and fairly compared with waveguide filters. Advantages and disadvantages of ISIW structure have been scrutinized in detail. Good agreement between the simulated and measured frequency response of proposed filters has been shown.     

A Novel Single-Cavity Dual Mode Substrate Integrated Waveguide Filter With Non-Resonating Node

A single-cavity novel dual mode substrate integrated waveguide (SIW) filter with non-resonating node (NRN) is presented. The NRN is implemented by etching a coplanar waveguide on the top metal layer of SIW cavity. Under such circumstances, the filter occupies similar area in comparison with conventional two-pole SIW counterparts, but exhibits better frequency selectivity. The measured S-parameters of the realized filter agree well with the simulated ones, with its good performance predicted.