一种稀缺样本条件下的雷达信号识别方法

针对复杂电磁环境下的辐射源精确识别问题，基于战场环境下雷达信号采集困难、 样本稀少的特点，以及相控阵雷达信号的特征，提出一种稀缺样本条件下基于迁移学习的雷达信号识别算法及其优化方法。该方法在识别稀缺样本目标时，训练时常短、识别准确度高，在-10 dB 条件下，对四种雷达信号进行识别，识别准确率可达 85.3%。     

基于谱相关理论的信号识别算法

采用了频域平滑周期图法估计循环谱，选取信号的Sx^＋（0）截面谱中谱峰个数为特征，提出了一种调制信号识别算法，给出了信号识别流程图及步骤，并进行了计算机仿真实验。仿真结果显示，该识别算法对这几种调制信号的识别具有较高的识别精度。     

雷达信号包络特征的检测与分析

雷达信号的分类识别是电子对抗的一个重要方面，而雷达信号包络分析是识别它的一种重要方法，它利用检测设备截获敌方雷达信号，通过分析它的包络特征来识别雷达信号以便于干扰或反干扰，采用平滑、微分的方法对包络进行处理，获得它的各项参数信息，从而达到对雷达信号识别的目的。     

基于卷积神经网络的数字调制分类识别

基于特征提取和模式识别的信号调制方式分类识别技术是非协作通信领域内应用广泛的重点研究对象。提出一种基于深度学习的通信信号数字调制识别算法，采用卷积神经网络找到数据的内在表达，实现逐层化地识别和分类MPSK、MFSK和MQAM中的六种调制信号。仿真实验结果表明，所提出的方法分类识别效果良好，基本达成了数字调制信号自动识别的目的。     

基于小波的无线信号调制识别

介绍了ASK、FSK和PSK三种信号在相同码元区间和码元区间变化时的小波变换，提出了基于小波脊线特征的门限判别法来识别这三种信号，并对提出的方法进行仿真实验。仿真结果表明，该识别方法在信噪比理想的情况下能很好地识别出这三种信号．但在信噪比不理想时，识别PSK信号的效果欠佳。     

利用高阶累积量实现数字调制信号的自动识别

通信信号的自动调制识别在截获信号处理方面是一个十分重要的课题。本文针对数字调制信号的识别问题，提出了一种基于高阶累积量的分类特征，该特征有效地抑制高斯白噪声的影响，能实现对2ASK、4ASK、4PSK、2FSK、4FSK等五种数字调制信号的识别。论文进行了理论推导，并用仿真实验和实际采集数据进行了验证。     

基于传感器融合技术的高压开关柜缺陷识别

高压开关柜是变电站的重要设备之一，对其进行绝缘缺陷检测能够保证系统供电的可靠性。基于此，首先制作了四种开关柜典型模型，并搭建了试验平台；其次采用传感器融合技术同时获取暂态地电压信号和脉冲电流信号；再次采用粒子群优化的多维支持向量机算法进行缺陷识别；最后分别针对TEV信号、脉冲电流传感器信号以及组合信号的缺陷识别，与神经网络识别算法进行对比，结果表明，基于传感融合技术的开关柜缺陷识别的准确率达到96.7%,证明缺陷识别算法的准确性。     

同频段混合信号中的无人机信号盲检测识别

无人机信号的探测识别技术是应对无人机黑飞滥用的关键技术之一。在实际信号监测环境中，经常会接收到多个信号的混合信号，它们在时域和频域上混叠且各信号分量调制样式相同。为解决在同频段混合信号中检测识别出无人机信号的问题，提出了一种通过谱特征分析判断无人机信号存在性的方法。分别采用基于二次方谱特征的无人机图传和WiFi混合信号检测识别算法以及基于频谱带宽特征的多无人机混合信号检测识别算法，通过对射频电路采集的信号进行仿真验证，实现了从同频段混合信号中检测识别出无人机信号分量。理论分析和实验测试结果证实了所提检测识别算法的有效性。     

一种短时信号精测频方法

脉冲信号的时宽限制了采样点的个数，使得短时信号的频率测量精度无法提高。提出了一种短时信号精测频方法，该方法能显著提高测频精度，从而给雷达信号的分选、识别及特定发射机识别（SEI）提供了很好的稳定度。     

处理雷达信号的虚拟声显示

概述侦收雷达信号处理系统识别信号的过程，提出利用听觉来引导视觉扫描信号参数的一种必要的辅助手段。介绍显示可听范围的脉冲重复频率、识别运动信号和雷达波束扫描特性的方法，并介绍虚拟声方位指示的基本途径。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its