异步快跳频系统多址干拢消除算法的研究

提出了基于最小均方误差(MMSE)的异步跳频多址同信道干扰消除算法,利用接收信号的差异性,以及期望用户信号的一致性,对译码时频矩阵进行求和判决和最小方差判决,并采用迭代算法进一步提高检测性能。仿真结果表明,该算法具有较好的性能,且收敛性好。     

判决反馈变步长盲自适应多用户检测

多用户干扰是影响码分多址系统性能的主要因素之一.基于判决反馈原理,本文提出一种变步长盲自适应多用户检测算法,以抵消多址干扰.理论分析和数值模拟表明该算法的收敛性能和误码性能均好于MOE检测器.     

判决反馈多用户检测及改进算法在WCDMA中的应用研究

研究了适用于第三代移动通信宽带码分多址(WCDMA)中的判决反馈检测技术,指出分组并行判决反馈多用户检测是一种较好的判决反馈多用户检测算法。理论分析了该算法的过程以及通过计算机仿真比较了该方案和其他的几种方案的误码性能、抗远近效应性能,并对算法的实时性给出了仿真分析和结果。从理论上分析了这两种算法的计算复杂度,并指出分组并行判决反馈多用户检测算法的计算复杂度是判决反馈算法的一半。     

一种半盲异步快跳频多址系统多用户检测算法

针对异步用户到达时间的差异性,以及期望用户信号的一致性,该文提出了基于最大行的均方误差(MSE)判决准则的半盲异步跳频多址多用户检测算法.利用期望用户时频矩阵具有最大行和最小均方偏差的特点实现检测目的.算法可以在未知干扰用户地址时实现盲检测,或利用部分干扰用户地址信息通过迭代提高检测性能.仿真结果表明提出的算法具有较好的性能和较低的复杂度,较强的抗虚警和漏检能力.     

卫星成对载波多址信号的一种联合分离解调算法

针对现有PCMA处理算法需要先分离后解调,且解调性能受分离误差影响的缺点,提出了一种基于TD-MLSE和PSP-MLSE思想的联合分离解调算法.该算法不需要进行混合信号分离,而是直接从接收信号中估计对方发送的信息序列.仿真表明,该算法在估计符号序列的同时具有良好的信道捕获与跟踪能力,并在2倍过采样下能得到较低的误码性能.小频偏下可选择复杂度小的TD-MLSE算法,而大频偏下选择PSP-MLSE算法跟踪性更好.     

LTE-A下行链路增强型同频干扰消除算法

在LTE-A系统中,同频组网的方式提高了频谱效率,但同时也带来了强烈的同频干扰.IRC接收机因具有较强的同频干扰消除能力而有效地提高了小区边缘用户的吞吐量,然而,该算法的性能需要信道估计和干扰信号的协方差矩阵估计的准确性来保证.LTE-A系统中的DM-RS携带固定的信息,接收端可以将已知的信号用于估计干扰信号的协方差矩阵,提出了一种基于参考信号DM-RS的方法,仿真结果表明,该方法能提高同频干扰消除算法的性能.     

频谱相位编码OCDMA系统的误码特性研究

本文利用中心极限定理和雅可比变换的方法，对频谱相位编码(spectral phase encoding)OCDMA系统中多址干扰和解码器输出信号的统计特性进行了研究，并据此推导出多址干扰和背景噪声共同作用下系统新的误码率公式．本文还分析了系统性能与判决门限选择的关系，数值结果表明：系统最佳的判决门限Rth=√P0/2，在此判决门限的条件下，系统的性能满足高速全光通信的需要．     

基于PIC的多载波系统联合检测译码算法

针对多入多出—正交频分复用（MIMO-OFDM）信号检测问题,基于并行干扰抵消技术提出了一种编码MIMO-OFDM系统联合检测与译码算法,通过在干扰抵消检测器和信道译码器之间传递判决信息提高系统的误比特率性能。计算机仿真表明,该算法获得的误码率性能较传统的迫零检测以及V-BLAST检测算法有了较大的提升。     

一种基于可靠判决反馈信号的SC-FDMA信道估计算法

针对SC-FDMA系统,提出一种基于LS,LMMSE的判决反馈信道估计算法。该算法通过设置门限BER,在初始信道估计之后得到的判决反馈信号中选取合适可靠的信号作为准导频信号,与原导频一起进行二次信道估计,通过导频数量的增加来提高信道估计的精度。理论分析和仿真结果表明,该算法提高了信道估计的精度,而且提高了通信性能。     

频率选择性MIMO衰落信道中基于导频的软均衡算法

MIMO无线传输技术的有效应用有赖于高效的空时干扰抑制策略.针对频率选择性衰落MIMO信道特点,本文提出一种联合判决反馈干扰抵消和粒子滤波的软均衡方案.首先利用导频,确定了各发送信号最强径与接收天线之间的对应关系以及基于信干噪比的判决反馈干扰抵消顺序;其次,依据后验估计准则,充分利用径强度及接收信号结构信息,构造了接收信号的重要性分布函数,采用粒子滤波算法对感兴趣用户信号实施最优判决并进行干扰抵消.仿真结果表明:相比于其他均衡方法,本算法可以有效抑制均衡误差的传播,同时具有较低的计算复杂度.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its