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1.
讨论了功率单片在片脉冲测试中在片校准技术、脉冲功率测试技术等难题,并在讨论以上问题的基础上,实现工程化应用,该测试技术能够有效覆盖至40GHz。在建立的脉冲大功率在片测试系统上对输出功率典型值5W的GaAs功率单片放大器进行测试验证,测试结果和装架测试结果相比较,输出功率误差<0.2dB。  相似文献   

2.
本文描述了使用共面微波探针的半导体芯片在片测试技术.设计研制出的多种微波探针性能参数稳定,使用寿命在十万次以上,用于在片检测各种GaAs共面集成电路芯片.触头排列为GSG的微波探针,-3dB带宽及反射损耗分别为14GHz和小于-10dB.  相似文献   

3.
在片测试系统在微波单片集成电路MMIC 的设计建模及生产检验中有着必不可少的作用。由于测试 参考面从矢网的同轴接口转移到微波探针,因此需要用共面波导校准片校准。设计制作了用于在片测试系统校准 的陶瓷衬底的SOLT 校准片,并对校准片进行了建模,提取出了1 ~40GHz 频段内片上负载及短路件的等效电阻及寄 生电感参量、直通件的延时参量。片上负载的电阻分量约为45赘,回波损耗在1 ~ 30GHz 小于-20dB;在30 ~ 40GHz 小于-10dB。验证了SOLT 校准片设计、制作及定标的整个工艺过程的有效性。  相似文献   

4.
GaAs高速动态分频器在片测试研究   总被引:2,自引:1,他引:1  
本文研制出多触头微波探针,建立了微波探针在片检测系统.针对GaAs高速集成电路──动态分频器电路芯片进行了在片测试和筛选.  相似文献   

5.
基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了一款DC~70 GHz超宽带放大器单片微波集成电路(MMIC)。采用6级共源共栅结构,拓展了超宽带放大器MMIC的带宽,提高了其增益。在共源共栅PHEMT之间引入一条调谐微带线作为调谐电感,改善了超宽带放大器MMIC的增益平坦度。在片测试结果表明,该放大器MMIC在DC~70 GHz内,小信号增益大于8.3 dB,增益平坦度典型值为±1 dB,饱和输出功率大于13 dBm。在50 GHz以下噪声系数小于5 dB,在70 GHz的噪声系数为8.5 dB。该放大器MMIC的工作电压为8 V,电流为70 mA,包含射频压点与直流压点的芯片尺寸为1.39 mm×1.11 mm。  相似文献   

6.
砷化镓微波单片集成电路可靠性预计模型研究   总被引:1,自引:0,他引:1  
在对微波单片集成电路(MMIC)的失效模式和失效机理进行分析的基础上,提出了砷化镓微波单片集成电路(GaAsMMIC)的可靠性预计数学模型,并通过加速寿命试验确定了产品的基本失效率和预计模型温度系数πT0在大量统计工艺数据和文献数据的基础上,获得了可靠性预计模型中的其它系数。  相似文献   

7.
介绍了GaAs高速集成电路在片瞬态参数测试的技术原理和系统组成。利用该系统对部分GaAs高速电路进行的测试结果表明,该系统行之有效。  相似文献   

8.
介绍了GaAs高速集成电路在片瞬态参数测试的技术原理和系统组成。利用该系统对部分GaAs高速电路进行的测试结果表明, 该系统行之有效  相似文献   

9.
基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了一款6~27 GHz宽带功率放大器单片微波集成电路(MMIC)。采用预匹配电路降低带内低频段的增益,将宽带电路设计简化为窄带电路设计。采用滤波器匹配网络,将GaAs PHEMT的栅极等效电容和漏极等效电容加入匹配电路中,缩小了宽带功率放大器MMIC的尺寸。在片测试结果表明,该放大器MMIC在6~27 GHz内,增益大于23 dB,增益平坦度约为±0.8 dB,饱和输出功率大于20.9 dBm。放大器MMIC的工作电压为4 V,电流为125 mA,芯片尺寸为1.69 mm×0.96 mm。该宽带功率放大器MMIC有利于降低宽带系统的复杂度和成本。  相似文献   

10.
TriQuint半导体公司日前发布了新型氮化镓(GaN)集成功率倍增器,为快速增长的有线电视基础构架提供了优异的性能。TriQuint新型氮化镓单片微波集成电路(MMIC)放大器提供高增益(24dB)以及卓越的复合失真性能(CTB/CSO),这也是多载波有线电视环境中至关重要的一个性能。TriQuint还发布了新款砷化镓(GaAs)功率倍增器,在‘绿色’12V的有线电视放大器之中,提供最高的增益和输出功率。  相似文献   

11.
This paper describes the design, fabrication, and measurement of a wideband 60 GHz monolithic microwave integrated circuit (MMIC) power amplifier that has demonstrated via on-wafer continuous wave (CW) measurement a record 43% power-added efficiency (PAE) at an associated output power of 224 mW and 7.5 dB of power gain. At a higher drain bias of 3.5 V, the CW output power increased to 250 mW with 38.5% PAE. Additional performance improvement is expected when the MMICs are tested on-carrier with proper heat sinking. These state-of-the-art first-pass design results can be attributed to: 1) the use of a fully selective gate recess etch 0.12-μm InP HEMT process fabricated on 2-mm-thick 3-in diameter InP substrates with slot via holes; 2) a design based on a novel on-wafer load-pull measurement technique; and 3) an accurate large-signal nonlinear model for InP HEMTs. In order to reach the low cost required for mass production, the same MMIC design was fabricated on an InP metamorphic HEMT (MHEMT) process. The MHEMT version of the MMIC demonstrated 41.5% PAE, with an associated output power of 183 mW (305 mW/mm) and 6.9 dB of power at 60 GHz when measured CW on-wafer. These InP HEMT and MHEMT results are, to our knowledge, the highest PAE and power bandwidth ever reported at V-band  相似文献   

12.
研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。  相似文献   

13.
A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO frequency operation. It is fabricated on a 4-mil substrate using 0.15 μm GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is pumped. To our knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a similar result. Both the simulation and measurement results are shown to be in good agreement  相似文献   

14.
A W-band high electron mobility transistor (HEMT) subharmonically pumped (SHP) gate mixer is designed with fixed LO frequency operation. it is fabricated on a 4-mil substrate using 0.15-/spl mu/m GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. the on-wafer measurement results show that the best conversion loss is about 4.7 dB in the W-band, as a 11-dbm 42-GHz low observable (LO) signal is pumped. To our knowledge, this is the first result on low conversion-loss W-band MMIC SHP HEMT gate mixer.  相似文献   

15.
Ion-implanted GaAs photoconductive (PC) switches have been used as an optical-microwave frequency mixer and electrical waveform samplers in a real-time sampling system. This high fidelity system has a bandwidth of 100-GHz, time resolution of 4-ps and a measurement sensitivity of 5-μV/√(Hz). Because of this high sensitivity capability, the magnitude of the testing signal can be maintained sufficiently small to allow network analysis of a device or circuit in the linear mode without signal distortion. In this paper, a linear time-domain network analysis of a broadband monolithic microwave integrated circuit (MMIC) amplifier has been demonstrated in real-time by the optoelectronic technique. A measurement time of less than 40 μs is used to acquire waveform data. The dynamic range of the system can be further improved to 40 dB by reducing the repetition rate of the step recovery diode. Since the PC switches are fabricated with processes compatible to MMIC manufacturing, this real-time system is well-suited for on-wafer MMIC characterization  相似文献   

16.
一种新颖的DC~50GHz低插入相移MMIC可变衰减器   总被引:2,自引:0,他引:2  
介绍了一种新颖的 DC~ 5 0 GHz低相移、多功能的 Ga As MMIC可变衰减器的设计与制作 ,获得了优异的电性能。微波探针在片测试结果为 :在 DC~ 5 0 GHz频带内 ,最小衰减≤ 3 .8d B,最大衰减≥ 3 5± 5 d B,最小衰减时输入 /输出驻波≤ 1 .5 ,最大衰减时输入 /输出驻波≤ 2 .2 ,衰减相移比≤ 1 .2°/d B。芯片尺寸 2 .3 3 mm× 0 .68mm× 0 .1 mm。芯片成品率高达 80 %以上 ,工作环境温度达 1 2 5°C,可靠性高 ,稳定性好  相似文献   

17.
基于0.15 μm GaAs增强型赝配高电子迁移率晶体管(E-PHEMT)工艺,研制了一款用于5G通信和点对点传输的高性能线性功率放大器单片微波集成电路(MMIC).采用栅宽比为1:4.4的两级放大结构保证了电路的增益和功率指标满足要求;基于大信号模型实现了最优输入输出阻抗匹配:采用电磁场仿真技术优化设计的MMIC芯片尺寸为2.5 mm×1.1 mm.芯片的在片测试结果表明,静态直流工作点为最大饱和电流的35%、漏压为5V的条件下,在9 ~15 GHz频率内,MMIC功率放大器小信号增益大于20 dB,1 dB压缩点输出功率不小于27 dBm,功率附加效率不小于35%,功率回退至19 dBm时三阶交调不大于-37 dBc.  相似文献   

18.
An E-band high speed power detector MMIC using 0.1 μm pHEMT technology has been designed, manufactured and experimentally characterized. By employing a 4-way quadrature structure for phase cancellation, the first, second and third harmonics can be suppressed and the ripple at the output is minimized. Compared to conventional topology with a low pass filter, a short response time and high speed performance of demodulation can be reached. Simulated results indicate that the detector is capable of demodulating an on-off keying signal at a data rate up to 5 Gbps. The fabricated chip occupies 1×1.5 mm2and the on-wafer measurement shows a return loss of less than -15 dB, responsivity better than 700 mV/mW and dynamic range of more than 25 dB over 70 to 90 GHz.  相似文献   

19.
This work describes the design and nonlinear modeling of two V-band monolithic microwave integrated circuit (MMIC) power amplifiers using a nonlinear high electron mobility transistor (HEMT) model developed specifically for very short gate length pseudomorphic HEMTs (PHEMTs). Both circuits advance the state-of-the-art of V-band power MMIC performance. The first, a single-ended design, produced 293 mW of output power with a record 26% power-added efficiency (PAE) and 9.9 dB of power gain at 62.5 GHz when measured on-wafer. The second MMIC, a balanced design with on-chip input and output Lange couplers for power combining, generated a record 564 mW of output power (27.5 dBm) with 21% PAE and 9.8 dB power gain. The MMIC's are passivated, thinned to 2 mils, and down-biased to 4.5 V for high reliability space applications. These excellent first-pass MMIC results are attributed to the use of an optimized 0.1-/μm PHEMT cell structure and a design based on millimeter-wave on-wafer device characterization, together with a new and very accurate large signal analytical FET model developed for 0.1-/μm PHEMTs  相似文献   

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