基于光子晶体光纤和单模光纤错芯结构的光纤传感器

制作了一种基于光子晶体光纤(PCF)和单模光纤( SMF)错芯结构的全光纤传感器。实验中,采用5cm的PCF,将其两端分别与SMF错芯熔接,制 成传感单元。第1个错芯结构将宽带光源的光分别耦合到PCF的纤芯和包层中,纤芯模式和包 层模式经过一定传输距离后进行SMF的纤芯,满足相位条件的发生干涉。在光谱仪(OSA)中观 测其干涉谱。当外界温度、折射率变化时,观测干涉峰位置的改变可实现对温度和折射 率的传感。实验结果显示,本文光纤传感器对温度的灵敏度为－8×10－3 nm/℃,对折射率的灵敏度为102nm/RIU。 对PCF填充乙醇后,制成相同结构的传感器,温度灵敏度达到－1.008nm/℃,提高了123倍。本文传感器制作简单,操作方便,能够广泛 应用于生物和物理传感领域。     

腰椎放大细芯光纤传感器实现折射率/温度同时测量的研究

根据马赫-曾德尔干涉(MZI)原理,在两段标准单模光纤(SMF)中间腰椎放大熔接长为2cm 的细芯SMF (TCSMF),构成光纤传感器。利用TCSMF的包层模、纤芯模对折射率和温度的灵敏度差异, 通过检测透 射光谱中不同级次的干涉谷的特征波长变化,结合敏感矩阵实现对折射率/温度的双参数同 时测量。实验选取 在1502.54nm波长处干涉谷的折射率和温度的 灵敏度分别为270.5171nm/RIU(其中RIU为折射率单位)和19.3 pm/℃;在1521.64nm波长处干涉谷的折射率灵 敏度为239.510nm/RIU,对温度不敏感。根据 0.01nm波长分 辨率的光谱仪(OSA),本文光纤传感器对折射率和温度的分辨率分别为3.6966×10－5 RIU 和0.518℃,也可以应用于其他参数的 测量,具有良好的应用和发展前景。     

基于保偏光纤和LPFG的Sagnac环温度及环境折射率双参量光纤传感器研究

报导了一种基于级联保偏光纤(PMF)和长周期 光纤光栅(LPFG)的Sagnac环温度和环境折射率双参 量传感器。在Sagnac干涉环内级联PMF和LPFG,LPFG的双折射效应使得Sagnac干涉的相位差 受环境折射率调 制。所提出的双参量传感器的透射光谱中,由LPFG形成的透射峰和Sagnac干涉形成的干涉峰 对温度和环境折射 率各自具有不同的灵敏度,通过对两者特征峰波长漂移量的测量就可实现对温度和环境折射 率的同时传感。实验上 搭建了温度和环境折射率双参量测试装置,采用波长解调方法,受光源功率波动的影响小, 温度灵敏度为1.2nm/℃; 环境折射率灵敏度为15nm/RIU。该双参量传感方案解决了温度和环 境折射率的交叉敏感问题,结构简单,采用金 属板凹槽结构进行封装有效地保护了LPFG,在生物传感和化学传感等领域具有广阔的应用前 景。     

细芯光纤M-Z干涉传感器多参数测量研究

实验制备了基于细芯光纤(TCF)的马赫-曾德尔干 涉仪(MZI)并进行了多参数测量传感研究。 传感器采用两段单模光纤(SMF)进行腰椎放大连接细芯光纤,形成MZI结构。利用TCF与SMF 的纤芯直径不匹配,在第1个接点激发出包层模式,包层模在第2个接点耦合进纤芯与纤芯 模产生 干涉,利用干涉条纹的波长漂移实现对外界环境参量的测量。实验所用的TCF纤芯的掺Ge浓 度较高(约为38mol.%),相对折射率和热光系数较普通SMF大,所以在保证 适当的自由光谱范围(FSR) 的前提下,TCF的长可以减小到2mm,传感头尺寸较小,且传感结构对于温度的变化十分 敏感。 实验结果表明,在30～250℃的温度范围内,其温度灵敏度为70.2pm/℃,并具有较好的线 性响应度。测试了传感器对折射率、应变和弯曲的响应,获得的灵敏度分别为－8. 12nm/RIU、1.8pm/με和2.07nm/m－1。     

增敏型级联双参量测量的光纤传感器北大核心CSCD

旨在有效解决液体折射率检测中温度和折射率交叉敏感的问题,研制了一种增敏型光纤光栅(FBG)级联马赫-曾德尔(M-Z)结构的温度、折射率双参量测量的光纤传感器。通过多次熔接实验,调节相应参数将单模光纤(SMF)和薄芯光纤(TCF)进行拉锥熔接;然后在TCF的另一端熔接无心光纤(NCF),制备出M-Z光纤干涉仪;再在NCF末端级联上铝制毛细管增敏封装后的光纤光栅(FBG),最终完成双参量测量的光纤传感器的制备。根据M-Z干涉原理及FBG模式理论,计算了增敏FBG理论的温度灵敏度,给出了传感器的灵敏度系数矩阵与温度、折射率与透射谱的波长漂移量的理论公式。搭建了温度、折射率传感测试系统,实验结果表明:在15~85℃温度范围内,随着温度增加,该传感器的透射谱逐渐红移,封装后的FBG和M-Z结构的温度与波长偏移量线性相关系数分别为0.96323和0.91577,温度灵敏度分别为33.71 pm/℃和11.58 pm/℃;在室温下(25℃),液体折射率在1.333RIU~1.34235RIU范围内,随着折射率增加,FBG透射谱不发生偏移,M-Z透射谱逐渐蓝移,折射率与波长偏移量线性相关系数分别为0和0.98761,折射率灵敏度分别为0 nm/RIU和-493.51322 nm/RIU。该传感器可以有效提高温度、折射率的检测精度和灵敏度,可应用于环境、生物、石油化工和食品生产等领域。     

基于光纤内双开口F-P干涉腔的折射率传感器

为了实现高灵敏度液体折射率传感器的高效制备,采用飞秒激光直写技术,在光纤末端刻蚀出矩形凹槽,辅以光纤熔接方法,制备出一种基于光纤内双开口法布里-珀罗(F-P)干涉腔的折射率传感器。该传感器的液体折射率传感灵敏度达到1107.76nm/RIU。讨论了温度对该传感器性能的影响,温度串扰小于0.0025nm/℃;基于海水含盐浓度与折射率的线性关系,探讨了该传感器在海水含盐浓度传感测量方面的应用,灵敏度为0.171nm/(mgmL-1)。结果表明,基于光纤内双开口F-P干涉腔的折射率传感器具有干涉谱对比度高、线性响应良好、灵敏度高、不易受温度串扰、结构紧凑、制备简单高效等优点,在生物、医疗、化学、环境等领域中有着广泛的应用前景。     

基于多模干涉和长周期光纤光栅的温度及折射率同时测量

基于多模干涉理论和长周期光纤光栅(LPFG)的传感特性,提出了一种单模-多模-单模(SMS)结构与LPFG级联的光纤传感器,实现了温度和折射率的同时测量。实验结果表明,SMS结构的干涉谱和LPFG对温度和折射率具有不同响应灵敏度,其温度灵敏度分别为0.017nm/℃和0.060nm/℃;SMS结构对折射率不敏感,而LPFG的折射率灵敏度为-35.60nm/RIU(RIU为折射率单位)。因此利用敏感矩阵,实现对温度和折射率的同时测量,得到温度和折射率的最大测量误差分别为±0.59℃和±0.0013。该结构灵敏度高、结构简单,且不易受电磁等干扰。实验结果具有良好的线性度,在生物化学领域应用前景良好。     

类椭圆结构光纤横向压力传感器及其温度自补偿研究

为解决光纤横向压力传感器灵敏度不高及温度交叉敏感的问题,提出了一种具有温度自补偿的类椭圆结构光纤横向压力传感器。传感器通过将标准单模光纤(single mode fiber,SMF)弯曲成类椭圆结构,并用聚二甲基硅氧烷(polydimethylsiloxane,PDMS)封装形成,温度自补偿则通过将另一个近似孪生的类椭圆结构与测量端并联实现。类椭圆弯曲下SMF的纤芯模和包层模发生干涉,其干涉光谱随外界横向压力的变化发生漂移。实验结果表明,在0.25—0.5 N的横向压力范围内,传感器的特征波长随横向压力的变化呈线性关系,在33.5—44 ℃的温度范围内,温度自补偿后的灵敏度可达6.6 nm/N,温度交叉灵敏度仅为0.001 5 N/℃,温度补偿误差不超过0.089 nm。提出的横向压力传感器灵敏度高、成本低、结构简单,有一定的应用参考价值。     

带有温度补偿的微流传感器研究

提出一种基于双长周期光纤光栅(LPFG)的边孔光纤微流传感器。该边孔光纤(SHF)内有2个空气孔,是天然的微流体通道,该微流传感器可进行温度补偿。利用CO2激光器在边孔光纤上写入双LPFG,其共振波长分别为1 268.7 nm和1 385.8 nm。实验结果表明,当传感器置于折射率1.335~1.395的甘油水溶液中,2个LPFG共振峰的折射率灵敏度分别为88.724 nm/RIU和79.474 nm/RIU,温度灵敏度分别为52.0 pm/℃和55.7 pm/℃,利用折射率和温度灵敏度可推导出传感器的传感矩阵。该文所提出的带有温度补偿的微流传感器具有良好的线性响应度,可实现折射率和温度的同时测量,在环境监测和食品安全领域有潜在价值。     

一种基于马赫-曾德尔干涉仪的折射率和温度同时测量传感器

设计制作了一种基于马赫-曾德干涉结构的传感器用于折射率和温度的同时测量,传感器的结构为单模-多模-细芯-多模-单模。利用RSoft光学仿真软件的BeamPROP模块对传感结构内部光场进行模拟分析,确定了多模光纤(multi-mode fiber, MMF)及细芯光纤(thin core fiber, TCF)的最优长度,制作了传感结构并搭建实验系统观测其折射率和温度响应情况,结合敏感矩阵,实现了双参量的同时测量。实验结果表明,该传感器在1.333—1.380的折射率范围内灵敏度为-44.944 nm/RIU,在30—65℃的温度范围内灵敏度为0.082 9 nm/℃。本文提出的传感器结构简单、体积小、灵敏度高,可以为折射率和温度双参量传感设计提供参考。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its