Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films

Transparent ZnO and Al-doped ZnO (AZO) thin films have been prepared by radio frequency sputtering deposition at room temperature. The optical, electrical, and structural characteristics of the obtained films have been extensively investigated as a function of sputtering and annealing parameters. Spectrophotometry, X-ray diffraction (XRD), atomic force microscopy (AFM), four-point probe and Hall-effect measurements were employed. The ZnO films generally exhibited excellent crystalline properties, while providing a UV cut-off in the absorption spectrum for optical filtration. AZO thin films exhibited an average transparency (larger than 85%) over the visible region of the spectrum, and resistivity of the order of 10^?3 Ω cm was obtained. The carrier concentration and electron mobility values proved to be dependent on the deposition parameters and annealing temperature. The obtained results showed that annealing temperatures higher than 400 °C were not necessary and potentially degraded the electronic properties of the AZO thin films.     

Microstructure,optical, electrical properties,and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics

Deposition of high-k HfO₂ gate dielectric films on n-type Si and quartz substrates by sol–gel spin-on coating technique has been performed and the structural, optical and electrical characteristics as a function of annealing temperature have been investigated. The structural and optical properties of HfO₂ thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–vis), and spectroscopic ellipsometry (SE). Results indicate that the monoclinic form of HfO₂ appears when temperature rises through and above 500 °C. The reduction in band gap is observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density and the decrease of the extinction coefficient with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfO₂/Al capacitor are analyzed by means of the high frequency capacitance–voltage (C–V) and the leakage current density–voltage (J–V) characteristics. And the leakage current conduction mechanisms as functions of annealing temperatures are also discussed.     

Effect of Fe-doping on the structural,optical and magnetic properties of ZnO thin films prepared by RF magnetron sputtering

In this paper, we report the fabrication and systematic characterization of Fe Doped ZnO thin Films. Fe_xZn_1−x O (x=0<0.05) films were prepared by RF magnetron sputtering on Si (400) substrate. Influence of Fe doping on structural, optical and magnetic properties has been studied. The X-ray diffraction (XRD) analysis shows that Fe doping has affected the crystalline structure, grain size and strain in the thin films. The best crystalline structure is obtained for 3% Fe Doping as observed from Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The magnetic properties studied using Vibrating Sample Magnetometer reveals the room temperature ferromagnetic nature of the thin films. However, changing the Fe concentration degrades the magnetic property in turn. The mechanism behind the above results has been discussed minutely in this paper.     

Effects of annealing temperature on the photocatalytic activity of N-doped TiO2 thin films

The effects of annealing temperature on the photocatalytic activity of nitrogen-doped (N-doped) titanium oxide (TiO₂) thin films deposited on soda-lime-silica slide glass by radio frequency (RF) magnetron sputtering have been studied. Glancing incident X-ray diffraction (GIAXRD), Raman spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectra were utilized to characterize the N-doped TiO₂ thin films with and without annealing treatment. GIAXRD and Raman results show as-deposited N-doped TiO₂ thin films to be nearly amorphous and that the rutile and anatase phases coexisted when the N-doped TiO₂ thin films were annealed at 623 and 823 K for 1 h, respectively. SEM microstructure shows uniformly close packed and nearly round particles with a size of about 10 nm which are on the slide glass surface for TiO₂ thin films annealed at 623 K for 1 h. AFM image shows the lowest surface roughness for the N-doped TiO₂ thin films annealed at 623 K for 1 h. The N-doped TiO₂ thin films annealed at 623 K for 1 h exhibit the best photocatalytic activity, with a rate constant (k_a) of about 0.0034 h⁻¹.     

High-quality c-axis oriented non-vacuum Er doped ZnO thin films

Preparation, growth, structure and optical properties of high-quality c-axis oriented non-vacuum Er doped ZnO thin films were studied. Zn_1−xEr_xO (x=0.0, 0.01, 0.02, 0.04, and 0.05) precursor solutions were prepared by sol–gel synthesis using Zn, and Er based alkoxide which were dissolved into solvent and chelating agent. Zn_1−xEr_xO thin films with different Er doping concentration were grown on glass substrate using sol–gel dip coating. Thin films were annealed at 600 °C for 30 min, and tried to observe the effect of doping ratio on structural and optical properties. The particle size, crystal structure, surface morphologies and microstructure of all samples were characterized by X-Ray diffraction (XRD) and Scanning Electron Microscope (SEM). The UV–vis spectrometer measurements were carried out for the optical characterizations. The surface morphology of the Zn_1−xEr_xO films depend on substrate nature and sol–gel parameters such as withdrawal speed, drying, heat treatment, deep number (film thickness) and annealing condition. Surface morphologies of Er doped ZnO thin films were dense, without porosity, uniform, crack and pinhole free. XRD results showed that, all Er doped ZnO thin films have a hexagonal structure and (002) orientation. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency (>85) in the visible region (400–700 nm).     

Farming of ZnO nanorod-arrays via aqueous chemical route for photoelectrochemical solar cell application

A low temperature aqueous chemical route is employed for the synthesis of zinc oxide (ZnO) nanorod arrays onto the soda lime and fluorine-doped tin oxide (FTO) coated glass substrates at various deposition times. Synthesis/farming of ZnO nanorod arrays (ZNRs) consists of the three-step as-ZnO seed forming, ZnO seed sowing followed by ZnO nanorod arrays growing. The length and diameter of ZnO nanorods increased with the reaction time prolonging. The physical, chemical and morphological properties were analyzed by means of X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence (PL), energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) respectively. The XRD pattern revealed wurtzite crystal structures of ZNRs, preferentially orienting in the (002) direction. SEM micrographs show that the ZnO nanorods grew up perpendicular to the substrate and their length increases with increase in deposition time. Finally, the photoelectrochemical (PEC) performance of ZNRs thin films were studied. The junction quality factor upon illumination (n_l), series and shunt resistance (R_s and R_sh), flat-band-potential (V_FB), fill factor (FF) and efficiency (η) have been estimated.     

STRUCTURAL AND OPTICAL PROPERTIES OF ZNO THIN FILMS PREPARED BY DIFFERENT SOL-GEL PROCESSES

ZnO thin films were prepared on quartz glass substrates by different sol-gel methods using a spin-coating technique. The structural and optical properties of ZnO thin films were studied by X-ray diffraction (XRD) and transmission spectra analysis. The results show that different factors such as Zn²⁺ concentration, solvent, sol stabilizer, pre-heat treatment temperature, and annealing temperature have a great impact on the structural and optical properties of ZnO thin films.     

Synthesis and microstructural characterization of Bi12SiO20 (BSO) thin films produced by the sol–gel process

We have produced Bi₁₂SiO₂₀ (BSO) thin films using the sol–gel process. The stable sol was synthesized using Bi(NO₃)₃·5H₂O and Si(OC₂H₅)₄ (TEOS) as the precursors, acetic acid and 2-ethoxyethanol as the solvents, and ethanolamine as the stabilizer. The stability of the solution, which depends on the concentration and the R_h value (R_h = [H₂O]/[M]), directly affects the microstructure of the BSO thin film. We determined that the optimal concentration for the preparation of BSO thin films is 0.76 M. The influences of the substrates, the annealing temperature, the concentration and the R_h = value of the solution on the microstructure of the Bi₁₂SiO₂₀ thin films were investigated. X-ray diffraction (XRD) showed that the Bi₁₂SiO₂₀ starts to form at 500 °C and that single-phase Bi₁₂SiO₂₀ polycrystalline thin films are formed at 700 °C. The coated films were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).     

Influences of annealing temperature on anti-reflective performance of amorphous Ta2O5 thin films

Influences of thermal annealing on structural, optical and morphological properties of the tantalum pentoxide (Ta₂O₅) thin films were investigated and anti-reflective performances were discussed in detail. The Ta₂O₅ thin films were deposited onto Corning Glass (CG), Si, GaAs and Ge substrates by radio-frequency (RF) magnetron sputtering technique using Ta₂O₅ ceramic target. The obtained secondary ion mass spectroscopy (SIMS) analysis results showed that uniform Ta and O distribution have formed throughout depth of the films deposited on substrates. The X-Ray diffraction (XRD) results indicated that the annealed Ta₂O₅ thin films at 100, 200, 300 and 500?°C have exhibited amorphous (a-Ta₂O₅) characteristic. The increased temperature has resulted in increasing the surface roughness from 0.67 to 1.60?nm. The optical transmittance of the annealed thin films has increased from 70.85 to 80.32% with increasing temperature. Spectroscopic ellipsometer (SE) measurement results demonstrated that the increased temperature has increased the refractive index of the Ta₂O₅ thin film from 2.11 to 2.18. The Ta₂O₅ thin film has reduced the average optical reflectivity of the Si, GaAs and Ge substrates by 78, 55 and 70%, respectively. In addition, thermal annealing process has decreased the optical reflectivity of the film. The obtained experimental results showed that single-layer Ta₂O₅ thin films can be used as anti-reflective layer in optical and optoelectronic applications. The best optical transmittance and anti-reflective performance were obtained at the annealing temperature of 500?°C.     

The ultraviolet emission mechanism of ZnO thin film fabricated by sol–gel technology

ZnO thin films were successfully deposited on SiO₂/Si substrate by sol–gel technology. The as-grown ZnO thin films were annealed under an ambient atmosphere from 600 to 900 °C by rapid thermal annealing (RTA) process. X-ray diffraction and scanning electron microscopy analyses reveal the physical structures of ZnO thin films. From PL measurement, two ultraviolet (UV) luminescence bands were obtained at 375 and 380 nm, and the intensity became stronger when the annealing temperature was increased. The strongest UV light emission appeared at annealing temperature of 900 °C. The chemical bonding state in ZnO films was investigated by using X-ray photoelectron spectrum. The mechanism of UV emission was also discussed.     

Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films

This study reports the surface roughness and nanomechanical characteristics of ZnO thin films deposited on the various substrates, obtained by means of atomic force microscopy (AFM), nanoindentation and nanoscratch techniques. ZnO thin films are deposited on (a- and c-axis) sapphires and (0001) 6H-SiC substrates by using the pulsed-laser depositions (PLD) system. Continuous stiffness measurements (CSM) technique is used in the nanoindentation tests to determine the hardness and Young’s modulus of ZnO thin films. The importance of the ratio (H/E _film) of elastic to plastic deformation during nanoindentation of ZnO thin films on their behaviors in contact-induced damage during fabrication of ZnO-based devices is considered. In addition, the friction coefficient of ZnO thin films is also presented here.     

Role of annealing temperature on structural and optical properties of zinc oxy-nitride films synthesized by powder vapor transport technique

Zinc oxy-nitride (ZnON) is an emerging semiconductor having tunable energy bandgap (Eg) and refractive index (n). Herein, the effect of annealing temperature on ZnON films synthesized on glass substrates at different (50, 100 and 150 sccm) nitrogen gas flow rates (NGFR) by simple powder vapor transport (PVT) technique is studied. All the synthesized ZnON films are annealed at 300 °C for 60 min. The unannealed and annealed ZnON (Un-&-An-ZnON) films are characterized by XRD, SEM, Raman and UV spectroscopies. XRD analysis confirms the formation of polycrystalline ZnN films and no diffraction plane related to oxide phase. The crystallinity of Un-ZnN films is increased after annealing, however, it is maximum for 100 sccm NGFR. Raman analysis indicates the presence of vibrational modes related to ZnN and ZnO phases, thereby confirming the formation of ZnON films. After annealing, the surface morphologies of Un-ZnON films is transformed from nano-sheets/nano-blocks to rounded nanoparticles. The change in structural and morphological features of ZnON films, associated with annealing temperature causes to create stresses and defects and hence Eg and n. The values of n (1.85–1.87) and Eg (2.6–2.7 eV) of Un-ZnON films are increased to (1.98–2.62) and (3.16–3.25 eV), after annealing, respectively. These inexpensive but high quality ZnON films can be used for semiconducting and optoelectronic devices.     

Influence of sputtering gas pressure on the LiCoO2 thin film cathode post-annealed at 400 °C

LiCoO₂ thin film cathodes were prepared by RF magnetron sputtering and post-annealing. The surface morphological change of the LiCoO₂ thin film wasin-situ measured by hot stage SEM with increasing temperature. The effects of sputtering gas pressure and post-annealing at low temperature (400 °C) were investigated by XRD, AFM, ICP-AES and RBS. The electrochemical characteristics of LiCoO₂ thin films were changed with variation of sputtering gas pressure. A difference of micro-structural evolution after post-annealing was observed, which related to the thin film properties. The electrochemical analysis revealed that the optimal sputtering gas pressure with the low temperature annealing step increases cell capacity and rate capability.     

Effect of Substrate Temperatures on Structural and Morphological Properties of Nano-Crystalline Silver Thin Films Grown on Silicon Substrates

The silver (Ag) thin films were deposited on silicon substrates by DC magnetron sputtering method under different substrate temperatures of 100–500?°C. Then the as-deposited films were subjected to annealing treatment. The XRD results revealed that the Ag thin films have a good nanocrystalline structure and a considerable increase in the crystallinity of Ag (111) peak was observed at substrate temperature of 200?°C. The average crystalline size of Ag films varied between 18 and 44 nm which confirms the presence of nanocrystal’s in the films. The AFM and SEM images demonstrated that the grain size and surface roughness of the films are sensitive to substrate temperature during deposition of the films and annealing treatment. The SEM results is in good agreement with the results of XRD and AFM analysis.     

Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering

ZnO films were prepared on unheated silicon substrate by RF magnetron sputtering technique. Postdeposition annealing of ZnO films in vacuum were found to improve film structure and electrical characteristics, such as dense structure, smooth surface, stress relief and increasing resistivity. Suitable annealing temperature also reduced loss factor. The correlation between annealing conditions and the physical structure of the films (crystalline structure and microstructure) was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The preferred annealing condition has been found to improve ZnO film characteristics for piezoelectric applications. An over-mode acoustic resonator using the ZnO film after annealing at 400 °C in vacuum circumstance for 1 h showed a large return loss of 42 dB at the center frequency of 1.957 GHz.     

Preparation and characterization of ZnO microcantilever for nanoactuation

ABSTRACT: Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film shows that it has a high c-axis-preferring orientation, which is confirmed by a FE-SEM cross-sectional image of the film. The EDS analysis indicates that only Zn and O elements are contained in the ZnO film. The AFM image shows that the film's surface is very smooth and dense, and the surface roughness is 5.899 nm. The microcantilever (Au/Ti/ZnO/Au/Ti/SiO2/Si) based on the ZnO thin film is fabricated by micromachining techniques. The dynamic characterizations of the cantilever using a laser Doppler vibrometer show that the amplitude of the cantilever tip is linear with the driving voltage, and the amplitude of this microcantilever's tip increased from 2.1 to 13.6 nm when the driving voltage increased from 0.05 to 0.3 Vrms. The calculated transverse piezoelectric constant d31 of the ZnO thin film is -3.27 pC/N. This d31 is high compared with other published results. This ZnO thin film will be used in smart slider in hard disk drives to do nanoactuation in the future.     

In-situ X-ray diffraction studies and magneto-optic Kerr effect on RF sputtered thin films of BaTiO3 and Co,Nb co-doped BaTiO3

The effect of annealing on structural and magnetic properties of the RF sputtered BaTiO₃ and Co, Nb co-doped BaTiO₃ thin films on Si (001) substrates were studied. The structure of the as-deposited (amorphous) films was changed into cubic perovskite phase during the in-situ X-ray diffraction from room temperature to 900 °C. The enhancement of crystalline quality with respect to the increase of annealing temperature was observed by the in-situ XRD. The magnetic properties of the films before and after annealing were studied by the measurement of Magneto-Optic Kerr Effect (MOKE). The pure BaTiO₃ revealed a paramagnetic behavior, whereas the Co and Nb co-doped BaTiO₃ films exhibited room temperature ferromagnetism. The increase in ferromagnetic response was observed in the Co and Nb co-doped BaTiO₃ films annealed at 900 °C rather than the as-deposited film.     

Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering

Tridoping (Al–As–N) into ZnO has been proposed to realize low resistive and stable p-ZnO thin film for the fabrication of ZnO homojunction by RF magnetron sputtering. The tridoped films have been grown by sputtering the AlN mixed ZnO ceramic targets (0, 0.5, 1 and 2 mol%) on GaAs substrate at 450 °C. Here, Al and N from the target, and As from the GaAs substrate (back diffusion) takes part into tridoping. The grown films have been characterized by Hall measurement, X-ray diffraction, photoluminescence, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It has been found that all the films showed p-conductivity except for 2 mol% AlN doped film. The obtained resistivity (8.6×10⁻² Ω cm) and hole concentration (4.7×10²⁰ cm⁻³) for the best tridoped film (1 mol% AlN) is much better than that of monodoped and codoped ZnO films. It has been predicted that [(As_Zn−2V_Zn)+N_O] acceptor complex is responsible for the p-conduction. The homojunction fabricated using the best tridoped ZnO film showed typical rectifying characteristics of a diode. The junction parameters have been determined for the fabricated homojunction by Norde's and Cheung's method.     

ZnO薄膜光催化降解苯酚实验

采用溶胶-凝胶法分别在普通玻璃和石英玻璃基底上制备出性能优良的ZnO薄膜,并通过XRD、AFM和UV-V is吸收光谱对薄膜进行表征,进一步研究了不同波长紫外光照射、不同基底及不同退火温度对薄膜光催化性能的影响。实验结果表明,以石英为基底,退火温度为400℃的ZnO薄膜具有更好的光催化氧化能力,并且实现了催化剂的固载,便于回收再利用,催化效果显著。     

Growth and structural characteristics of perovskite-wurtzite oxide ceramics thin films

Wurtzite ZnO thin films were grown on single-crystal perovskite SrTiO₃(STO) (1 0 0) substrates at various temperatures. The ZnO/STO thin films thus formed exhibit a preferred (1 1 0)-orientation at a growth temperature of 600-700 °C. A high growth temperature enhances not only the (1 1 0)-texture of ZnO/STO thin films but also the crystalline quality of the film. (La_0.7Sr_0.3)MnO₃ (LSMO) thin films were subsequently grown on ZnO(1 1 0)/STO(1 0 0) substrates with various thicknesses, and were polycrystalline. A thicker LSMO film has a stronger (0 0 l)-preferred orientation than the thinner one. The lattice distortion of LSMO decreases as the LSMO thickness increases. Magnetization vs. temperature curves show that both crystalline quality and lattice distortion influence the magnetic properties of LSMO thin films. The physical properties of the manganite oxide can be modulated by forming a heterostructure with wurtzite ZnO.