Sintering behavior,structural phase transition,and microwave dielectric properties of La1‐xZnxTiNbO6‐x/2 ceramics

La_1‐xZn_xTiNbO_6‐x/2 (LZTN‐x) ceramics were prepared via a conventional solid‐state reaction route. The phase, microstructure, sintering behavior, and microwave dielectric properties have been systematically studied. The substitution of a small amount of Zn²⁺ for La³⁺ was found to effectively promote the sintering process of LTN ceramics. The corresponding sintering mechanism was believed to result from the formation of the lattice distortion and oxygen vacancies by means of comparative studies on La‐deficient LTN ceramics and 0.5 mol% ZnO added LTN ceramics (LTN+0.005ZnO). The resultant microwave dielectric properties of LTN ceramics were closely correlated with the sample density, compositions, and especially with the phase structure at room temperature which depended on the orthorhombic‐monoclinic phase transition temperature and the sintering temperature. A single orthorhombic LZTN‐0.03 ceramic sintered at 1200°C was achieved with good microwave dielectric properties of ε_r~63, Q×f~9600 GHz (@4.77 GHz) and τ_f ~105 ppm/°C. By comparison, a relatively high Q × f~80995 GHz (@7.40 GHz) together with ε_r~23, and τ_f ~?56 ppm/°C was obtained in monoclinic LTN+0.005ZnO ceramics sintered at 1350°C.     

Novel Low‐Firing Forsterite‐Based Microwave Dielectric for LTCC Applications

A novel low‐temperature sintering microwave dielectric based on forsterite (Mg₂SiO₄) ceramics was synthesized through the solid‐state reaction method. The effects of LiF additions on the sinterability, phase composition, microstructure, and microwave dielectric properties of Mg₂SiO₄ were investigated. It demonstrated that LiF could significantly broaden the processing window (~300°C) for Mg₂SiO₄, and more importantly the sintering temperature could be lowered below 900°C, maintaining excellent microwave dielectric properties simultaneously. The 2 wt% LiF‐doped samples could be well‐sintered at 800°C and possessed a ε_r ~ 6.81, a high Q×f ~ 167 000 GHz, and a τ_f ~ ?47.9 ppm/°C, having a very good potential for LTCC integration applications.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Broad sintering temperature range and stable microwave dielectric properties of Mg2TiO4–CeO2 composite ceramics

There has been extensive research on microwave dielectric materials considering their application in 5G and 6G communication technologies. In this study, the sintering temperature range of Mg₂TiO₄–CeO₂ (MT-C) ceramics was broadened using a composite of CeO₂ and Mg₂TiO₄ ceramics, and their microwave dielectric performance was stabilized. Low-loss MT-C composite ceramics were prepared using the solid-phase reaction method, and their microwave dielectric properties, microscopic morphologies, and phase structures were investigated. The proposed MT-C ceramics contained Mg₂TiO₄ and CeO₂ phases; their average grain size was maintained at 2–4 μm in the sintering temperature range of 1275–1425 °C, and the samples were uniformly dense without porosity. The cross-distribution of Mg₂TiO₄ and CeO₂ grains in the samples inhibited the growth of ceramic grains, providing uniform and dense surfaces. The dielectric loss of MT-C ceramics remained constant in the temperature range of 1300–1425 °C at 9 × 10^?4 (8.45 ≤ f ≤ 8.75 GHz). As opposed to the base material, MT-C ceramics are advantageous owing to their wide sintering temperature range and the stable microwave dielectric properties, and there are suitable substrate materials for further industrial applications.     

Low‐Temperature Sintering and Microwave Dielectric Properties of (Mg0.95Zn0.05)2(Ti0.8Sn0.2)O4–(Ca0.8Sr0.2)TiO3 Composite Ceramics

0.9(Mg_0.95Zn_0.05)₂(Ti_0.8Sn_0.2)O₄–0.1(Ca_0.8Sr_0.2)TiO₃ (MZTS–CST) ceramics were prepared by a conventional solid‐state route. The MZTS–CST ceramics sintered at 1325°C exhibited ε_r = 18.2, Q × f = 49 120 GHz (at 8.1 GHz), and τ_f = 15 ppm/°C. The effects of LiF–Fe₂O₃–V₂O₅ (LFV) addition on the sinterability, phase composition, microstructure, and microwave dielectric properties of MZTS–CST were investigated. Eutectic liquid phases 0.12CaF₂/0.28MgF₂/0.6LiF and MgV₂O₆ were developed, which lowered the sintering temperature of MZTS–CST ceramics from 1325°C to 950°C. X‐ray powder diffraction (XRPD) and energy dispersive spectroscopy (EDS) analysis revealed that MZTS and CST coexisted in the sintered ceramics. Secondary phase Ca₅Mg₄(VO₄)₆ as well as residual liquid phase affected the microwave dielectric properties of MZTS–CST composite ceramics. Typically, the MZTS–CST–5.3LFV composite ceramics sintered at 950°C showed excellent microwave dielectric properties: ε_r = 16.3, Q × f = 30 790 GHz (at 8.3 GHz), and τ_f = ?10 ppm/°C.     

Fabrication and Microwave Dielectric Properties of Mg2SiO4‐LiMgPO4‐TiO2 Composite Ceramics

Complete solid solutions between Mg₂SiO₄ and LiMgPO₄ are confirmed by the XRD results. The phase constitution of 0.5Mg₂SiO₄‐0.5LiMgPO₄ is found to be dependent on firing temperature. The chemical compatibility between Mg₂SiO₄ and rutile phase at sintering temperature is modified by incorporating LiMgPO₄. The microwave dielectric properties of (1?y)(0.5Mg₂SiO₄‐0.5LiMgPO₄)‐yTiO₂ (y = 0–0.3) composite ceramics have been investigated. The optimized microwave dielectric properties for 0.35Mg₂SiO₄‐0.35LiMgPO₄‐0.3TiO₂ ceramics sintered at 1050°C show low dielectric constant (11.4), high‐quality factor (31 800 GHz), and low‐temperature coefficient of resonant frequency (?4 ppm/°C).     

Effects of TiO2 additive on ultra-low-loss MgO–LiF microwave dielectric ceramics

MgO ceramics have good microwave dielectric properties, but the high sintering temperatures limit its application. The effects of TiO₂ additive on the phase composition and microwave dielectric properties of MgO ceramics with 4mol%LiF were investigated by solid state reaction method. TiO₂ and MgO form Mg₂TiO₄ in a magnesium-rich environment with 4mol%LiF at about 900 °C, which as a solid solution or second phase had a huge impact on MgO ceramic with 4mol % LiF. When the content of TiO₂ less than 2mol %, Mg₂TiO₄ as a solid solution in MgO ceramics, which made the grain of MgO larger. When the content of TiO₂ more than 2mol %, Mg₂TiO₄ as a second phase in MgO ceramics, which made the microwave dielectric properties of MgO ceramics bad. Typically, the MgO-4mol%LiF-0.5mol%TiO₂ ceramic sintered at 1075 °C for 6 h acquired the best dielectric properties: ε_r = 9.7, Qf = 617,000 GHz and τ_f = −59.49 ppm/°C.     

Synthesis,Microstructure, and Microwave Dielectric Properties of Spinel ZnGa2O4 Ceramics

Spinel ZnGa₂O₄ ceramics were synthesized by conventional solid‐state method and their microwave dielectric properties were investigated. The phase evolution and microstructures of specimens were studied by XRD and SEM. The textured surface microstructures of ZnGa₂O₄ ceramics formed at high sintering temperatures. The spinel‐structured ZnGa₂O₄ ceramics sintered at 1385°C exhibited excellent microwave dielectric properties: a dielectric constant (ε_r) of 10.4, a quality factor (Q × f) of 94.600 GHz, and a temperature coefficient of resonant frequency (τ_f) of ?27 ppm/°C. ZnGa₂O₄ ceramics have a low sintering temperature, a wide temperature region, and a small negative τ_f value. They are promising candidate materials for millimeter‐wave devices.     

Low‐Temperature Synthesis of CoNb2O6 Microwave Dielectric Ceramics

Low‐fired cobalt niobate (CoNb₂O₆) microwave dielectric ceramics were prepared through a developed sol–gel process using Nb₂O₅·nH₂O as starting source. A metal‐dioxo‐bridged complex precursor was described on the basis of FT‐IR spectrum. The crystalline phases of calcined powders were characterized by X‐ray diffraction. Nanosized CoNb₂O₆ particles with orthorhombic α‐PbO₂‐type structure were obtained above 750°C. There was no subsequent phase change upon sintering, and all compounds sintered to at least 94% of theoretical density. At 1000°C/4 h, CoNb₂O₆ ceramics exhibited ε_r ~ 21.9, Q × f ~ 66 140 GHz (at 8.9 GHz) and τ_f ~ ?39.7 ppm/°C, having a good potential for low‐temperature cofired ceramic applications.     

Microwave Dielectric Properties of Novel Glass‐Free Low‐Firing Li2CeO3 Ceramics

Novel glass–free low temperature firing microwave dielectric ceramics Li₂CeO₃ with high Q prepared through a conventional solid‐state reaction method had been investigated. All the specimens in this paper have sintering temperature lower than 750°C. XRD studies revealed single cubic phase. The microwave dielectric properties were correlated with the sintering conditions. At 720°C/4 h, Li₂CeO₃ ceramics possessed the excellent microwave dielectric properties of ε_r = 15.8, Q × f = 143 700 (GHz), and τ_f  = ?123 ppm/°C. Li₂CeO₃ ceramics could be excellent candidates for glass‐free low‐temperature co‐fired ceramics substrates.     

Low temperature fired CaF2-based microwave dielectric ceramics with enhanced microwave properties

Low-temperature-fired microwave ceramics are key to realizing the integration and miniaturization of microwave devices. In this study, a facile wet chemical method was applied to synthesize homogenous nano-sized CaF₂ powders for simultaneously achieving low-temperature sintering and superior microwave dielectric properties. Pure CaF₂ ceramics sintered at 950 °C for 6 h with good microwave dielectric properties (ε_r = 6.22, Q×f = 36,655 GHz, and τ_f = ?102 ppm/°C) was achieved. The microwave dielectric properties of the CaF₂ ceramics were further improved by introducing LiF as a sintering aid. The sintering temperature of CaF₂-based ceramics was effectively lowered from 950 °C to 750 °C with 10 wt% LiF doping, and excellent microwave dielectric properties (ε_r = 6.37, Q×f = 65,455 GHz, and τ_f = ?71 ppm/°C) were obtained.     

Low‐Temperature Sinterable (1−x)Ba3(VO4)2–xLiMg0.9Zn0.1PO4 Microwave Dielectric Ceramics

The novel low‐temperature sinterable (1 ? x)Ba₃(VO₄)₂–xLiMg_0.9Zn_0.1PO₄ microwave dielectric ceramics were prepared by cofiring the mixtures of pure‐phase Ba₃(VO₄)₂ and LiMg_0.9Zn_0.1PO₄. The phase structure and grain morphology of the ceramics were evaluated using X‐ray diffraction, Raman spectra, and scanning electron microscopy. The results indicated that Ba₃(VO₄)₂ and LiMg_0.9Zn_0.1PO₄ phases can well coexist in the sintered body. Nevertheless, a small amount of LiZnPO₄ and some vanadate phases with low melting points were observed, which not only can influence the microwave dielectric properties of the ceramic but also can obviously improve the densification behavior at a relatively low sintering temperature. The near‐zero temperature coefficients of the resonant frequency (τ_f) could be achieved by adjusting the relative content of the two phases owing to their opposite τ_f values and simultaneously a desirable quality factor Q × f value can be maintained. No chemical reaction between the matrix ceramic phase and Ag took place after sintering at 800°C for 4 h. The ceramics with 45 vol% LiMg_0.9Zn_0.1PO₄ can be well sintered at only 800°C and exhibit excellent microwave dielectric properties of ε_r ~ 10, Q × f ~ 64 500 GHz, and τ_f ~ ?2.1 ppm/°C, thus showing a great potential as a low‐permittivity low‐temperature cofired microwave dielectric material.     

Structure‐Dependent Microwave Dielectric Properties and Middle‐Temperature Sintering of Forsterite (Mg1–xNix)2SiO4 Ceramics

The crystal structure, microstructure, and microwave dielectric properties of forsterite‐based (Mg_1–xNi_x)₂SiO₄ (x = 0.02–0.20) ceramics were systematically investigated. All samples present a single forsterite phase of an orthorhombic structure with a space group Pbnm except for a little MgSiO₃ secondary phase as x > 0.08. Lattice parameters in all axes decrease linearly with increasing Ni content due to the smaller ionic radius of Ni²⁺ compared to Mg²⁺. The substitution of an appropriate amount of Ni²⁺ could greatly improve the sintering behavior and produce a uniform and closely packed microstructure of the Mg₂SiO₄ ceramics such that a superior Q × f value (152 300 GHz) can be achieved as x = 0.05. The τ_f value was found to increase with increasing A‐site ionic bond valences. In addition, various additives were used as sintering aids to lower the sintering temperature from 1500°C to the middle sintering temperature range. Excellent microwave dielectric properties of ε_r~6.9, Q × f~99800 GHz and τ_f~?50 ppm/°C can be obtained for 12 wt% Li₂CO₃‐V₂O₅‐doped (Mg_0.95Ni_0.05)₂SiO₄ ceramics sintered at 1150°C for 4 h.     

Microwave hybrid sintering of 0.95(Mg0.95Zn0.05)TiO3-0.05CaTiO3 ceramics and its microwave dielectric properties

Microwave dielectric ceramic powder of 0.95(Mg_0.95Zn_0.05)TiO₃-0.05CaTiO₃ (MCT) has been prepared by solid-state reaction method through single-step calcination at 1150 °C. The green bodies prepared from the calcined powder have been sintered by conventional, susceptor-aided, and hybrid microwave sintering techniques followed by annealing. XRD of calcined and sintered ceramics show (Mg,Zn)TiO₃ as a major phase with CaTiO₃ as a minor secondary phase. Fractographs of fired ceramics obtained by SEM show similar features in conventional and hybrid microwave types of sintering. Microwave dielectric properties such as relative permittivity(ε_r), temperature coefficient of resonant frequency(τ_f), and unloaded quality factors (Q_u) for conventional sintered at 1325 °C for 4 h are—ε_r~19.8, τ_f< –6 ppm/°C and Q_u.f 69,600 GHz at 6 GHz. Ceramics obtained through susceptor-aided microwave sintering at 1325 °C for 4 h show poor fired density. But ceramics got by microwave-hybrid sintering (resistive + microwave) at the same temperature show ε_r~20.6, Q_u.f~81,600 GHz at 6 GHz and τ_f~?6.9 ppm/°C. The effect of hybrid microwave sintering on the dielectric properties of MCT ceramics is found to be more subtle than microstructural.     

Novel Temperature Stable Li2MnO3 Dielectric Ceramics with High Q for LTCC Applications

Novel microwave dielectric ceramics in the Li₂MnO₃ system with high Q prepared through a conventional solid‐state route had been investigated. All the specimens exhibited single phase ceramics sintered in the temperature range 1140°C–1230°C. The microwave dielectric properties of Li₂MnO₃ ceramics were strongly correlated with sintering temperature and density. The best microwave dielectric properties of ε_r = 13.6, Q × f = 97 000 (GHz), and τ_f = ?5.2 ppm/°C could be obtained as sintered at 1200°C for 4 h. BaCu(B₂O₅) (BCB) could effectively lower the sintering temperature from 1200°C to 930°C and slightly induced degradation of the microwave dielectric properties. The Li₂MnO₃ ceramics doped with 2 wt% BaCu(B₂O₅) had excellent dielectric properties of ε_r = 11.9, Q × f = 80 600 (GHz), and τ_f = 0 ppm/°C. With low sintering temperature and good dielectric properties, the BCB added Li₂MnO₃ ceramics are suitable candidates for LTCC applications in wireless communication system.     

Ultra‐low temperature sintering microwave dielectric ceramics based on Ag2O–MoO3 binary system

The Ag₂Mo₂O₇ and Ag₆Mo₁₀O₃₃ ceramics for ultra‐low temperature co‐fired ceramic application were prepared by the solid‐state reaction route. The optimized densification temperatures of Ag₂Mo₂O₇ and Ag₆Mo₁₀O₃₃ are 460°C and 500°C, respectively. The phase structures and microstructures of these ceramics were systematically studied. The Ag₂Mo₂O₇ ceramic sintered at 460°C/4 h exhibits excellent microwave dielectric properties with ε_r=13.3, Q×f=25 300 GHz and τ_f=?142 ppm/°C at 9.25 GHz. The Ag₆Mo₁₀O₃₃ ceramic sintered at 500°C/4 h shows the microwave dielectric properties with ε_r=14.0, Q×f=8500 GHz and τ_f=?50 ppm/°C at 9.00 GHz. Moreover, when Ag₂Mo₂O₇ samples are sintered at ultra‐low sintering temperatures of 420°C‐490°C, the Q×f values of them are all above 20 000 GHz. Besides, the Ag₂Mo₂O₇ ceramic does not react with silver powder or aluminum powder. The variation of relative permittivity, resonant frequency, and Q×f values as a function of operating temperature has been also studied. All the results indicate that the Ag₂Mo₂O₇ ceramic is a good candidate for ultra‐low temperature co‐fired microwave devices.     

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of MgF2‐Doped Diopside Ceramics

A new low‐fired dielectric material derived from CaMg_0.9Zn_0.1Si₂O₆ (CMZS) ceramics with high quality factor was synthesized by solid‐state reaction method. The effects of MgF₂ addition on the sinterability, phase composition, crystal defects, and microwave dielectric properties of CMZS were investigated. MgF₂ was proved not only to lower the sintering temperature to ~1000°C but also to remarkably modify the microwave dielectric properties of CMZS. In addition to the main diopside phase, forsterite was identified as the secondary phase in all MgF₂‐doped samples. Dielectric temperature spectra showed that MgF₂ induced significant dielectric relaxations associated with oxygen vacancy defects to CMZS. Thermally stimulated depolarization current was, therefore, considered to obtain the defects associated with extrinsic microwave dielectric loss mechanisms. Compared with undoped CMZS, although the concentration of oxygen vacancies showed a notable increase in the 5 wt% MgF₂‐doped CMZS, the Q×f values were still improved. Here, with proper MgF₂‐doping, it demonstrated that the microwave dielectric loss was basically influenced by phase composition. The excellent characteristics of ε_r = 7.78, Q×f = 151 800 GHz, and τ_f = ?26.40 ppm/°C were achieved from the 5 wt% MgF₂‐doped specimens sintered at 1000°C.     

Effects of ZnO and B2O3 on the Microstructure and Microwave Dielectric Properties of 5Li2O‐1Nb2O5‐5TiO2 Ceramics

The effects of ZnO and B₂O₃ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O‐1Nb₂O₅‐5TiO₂ (LNT) ceramics have been investigated. With addition of low‐level doping of ZnO and B₂O₃, the sintering temperature of the LNT ceramics can be lowered down to near 920°C due to the liquid phase effect. The Li₂TiO₃ss and the “M‐phase” are the two main phases, whereas other phase could be observed when co‐doping with ZnO and B₂O₃ in the ceramics. And the amount of the other phase increases with the ZnO content increasing. The addition of ZnO does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the good microwave dielectric properties of ε_r = 36.4, Q × f = 8835 GHz, τ_f = 4.4 ppm/°C could be obtained for the 1 wt% B₂O₃ and 4 wt% ZnO co‐doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as internal electrode.     

Low‐Temperature‐Fired ReVO4 (Re = La,Ce) Microwave Dielectric Ceramics

We report a series of ReVO₄ (Re = La, Ce) microwave dielectric ceramics fabricated by a standard solid‐state reaction method. X‐ray diffraction and scanning electron microscopy measurements were performed to explore the phase purity, sintering behavior, and microstructure. The analysis revealed that pure and dense monoclinic LaVO₄ ceramics with a monazite structure and tetragonal CeVO₄ ceramics with a zircon structure could be obtained in their respective sintering temperature range. Furthermore, LaVO₄ and CeVO₄ ceramics sintered at 850°C and 950°C for 4 h possessed out‐bound microwave dielectric properties: ε_r = 14.2, Q × f = 48197 GHz, τ_f = ?37.9 ppm/°C, and ε_r = 12.3, Q × f = 41 460 GHz, τ_f = ?34.4 ppm/°C, respectively. The overall results suggest that the ReVO₄ ceramics could be promising materials for low‐temperature‐cofired ceramic technology.     

Grain boundary segregation and microwave dielectric properties of low loss Mg1·5Zn0·5SiO4 ceramics containing Bi2O3

Abstract

Abstract

Uncommon low loss Mg_1·5Zn_0·5SiO₄ ceramics containing Bi₂O₃ were investigated by focusing on the roles of Bi₂O₃ on phase evolution and resultant microwave dielectric properties. While the primary goal of lowering sintering temperature can be easily assumed, some unexpected behaviours of the Bi₂O₃ containing materials are highlighted with experimental evidences concerning selective dissolution of Zn₂SiO₄ and grain boundary segregation of gradual Bi richer phases. These evidences are strongly dependent on the content of Bi₂O₃ and sintering temperature. As an optimal composition, Mg_1·5Zn_0·5SiO₄ with 0·5?mol.-%Bi₂O₃ exhibited promising dielectric properties of a k value ～6·8 and a Q×f value ～23?300 at a sintering temperature of 1150°C, which is much lower than typical sintering temperature of 1450°C.