Layered Structure Induced Anisotropic Low‐Energy Recoils in Ti3SiC2

Low‐energy recoil events in Ti₃SiC₂ are studied using ab initio molecular dynamics simulations. We find that the threshold displacement energies are orientation dependent because of anisotropic structural and/or bonding characteristic. For Ti and Si in the Ti–Si layer with weak bonds that have mixed covalent, ionic, and metallic characteristic, the threshold displacement energies for recoils perpendicular to the basal planes are larger than those parallel to the basal planes, which is an obvious layered‐structure‐related behavior. The calculated minimum threshold displacement energies are 7 eV for the C recoil along the direction, 26 eV for the Si recoil along the direction, 24 eV for the Ti in the Ti–C layer along the direction and 23 eV for the Ti in the Ti–Si layer along the direction. These results will advance the understanding of the cascade processes of Ti₃SiC₂ under irradiation and are expected to yield new perspective on the MAX phase family that includes more than 100 compounds.     

Growth of diopside crystals in CMAS glass‐ceramics using Cr2O3 as a nucleating agent

CaO–Al₂O₃–MgO–SiO₂ (CAMS)‐based glass‐ceramics were prepared using body crystallization method. Adding Cr₂O₃ into the ceramics not only effectively lowered the crystallization temperature, but also led to significant grain refinement of diopside that crystallized in the CAMS glass‐ceramic after crystallization treatment at 900°C for 2 hours. Experimental work verified that the epitaxial growth of the diopside on the spinel particles, which formed during nucleation treatment when fabricating the glass‐ceramics, facilitated the heterogeneous nucleation of diopside on the spinel and refined the diopside. In addition, two energetically favored crystallographic orientation relationships between the epitaxial growth diopside and spinel were experimentally observed. They are //[001]_diopside,////(200)_diopside and //[101]_diopside, (311)_spinel//. These two novel results can be potentially used to develop new glass‐ceramic materials with improved performance.     

First‐principles investigation of the thermodynamic stability of MB2 materials surfaces (M = Ti/Zr/Hf)

Some of the renewed interest in transition metal diborides (MB₂, M = Ti/Zr/Hf) arises from their potential use as matrices in ultrahigh‐temperature ceramic matrix composites (UHTCMCs). Crucial to the understanding of such composites is the study of the fiber/matrix interfaces, which in turn requires a deep knowledge of the surface structures and the thermodynamics of the matrix material. Here we investigate the surface stability of MB₂ compounds by first‐principles calculations. Five surfaces are stabilized when going from a M‐rich to a B‐rich environment, respectively (0001)_M, (100)_M, (101)_B(M), (113)_M and (0001)_B, with the highly stable (100)_M, (101)_B(M) and (113)_M surfaces being discussed here for the first time. The mechanism behind the surface stability is analyzed in terms of cleavage energy, surface strain and surface bonding states. Our results provide important information for a better understanding of the most likely surfaces exposed to the fibers in UHTCMCs, thereby for the construction of reliable interfaces and ultimately UHTCMCs models.     

Lattice and Grain‐Boundary Diffusion of Al in Tetragonal Yttria‐Stabilized Zirconia Polycrystalline Ceramics (3Y‐TZP) Analyzed Using SIMS

Aluminum oxide was deposited on the surface of 3 mol% yttria‐stabilized tetragonal zirconia polycrystals (3Y‐TZP). The samples were annealed at temperatures from 1523 to 1773 K. Diffusion profiles of Al in the form of mean concentration vs. depth in B‐type kinetic region were investigated by secondary ion mass spectroscopy. The experimental results for the lattice diffusion (D_B) and grain boundary diffusion (D_GB) are as follows: and where δ is the grain‐boundary width and s is the segregation factor.     

Chemical Potential‐Based Analysis for the Oxidation Kinetics of Si and SiC Single Crystals

A one‐dimensional diffusion problem with prescribed boundary conditions for the oxygen potential at the oxygen(gas)–silica and at the silica–substrate interfaces is employed to obtain the parabolic rate constant for oxidation of Si crystals. The results, using the data for diffusion and solubility of molecular oxygen in silica agree reasonably well with the oxidation kinetics results for Si from Deal and Grove (1965). The measurements for SiC crystals (Costello and Tressler, 1985) lie below these results for Si, even though in both instances, diffusion through the silica overlayer is expected to have been rate controlling. This difference is explained in terms of the lower Si activity at the SiC–SiO₂ interface than at the Si–SiO₂ interface. The implication of the interface structure is discussed in an attempt to explain the higher activation energy for oxidation of the Si‐face (0001), than the C‐face of SiC crystals.     

Low‐temperature synthesis of uranium monocarbide by a Pechini‐type in situ polymerizable complex method

Uranium monocarbide (UC) was successfully synthesized by the Pechini‐type in situ polymerizable complex technique (IPC) with the organic matter as the only carbon source. In the aqueous process, a mixture of citric acid (CA) and mannitol with was polymerized to form a spongy‐like organic polymeric precursor without any precipitations. The structural evolution and formation mechanism of the precursor were investigated using XRD, DSC‐TG, SEM (EDX), TEM, and FT‐IR. XRD results demonstrated that UC was obtained with the /mannitol/CA molar ratios of 1.0/0.3/1.0 at a low temperature of 1400°C. SEM and TEM analyses revealed that the UO₂ nanoparticles were uniformly distributed in the carbon matrix to form UO₂/C nanocomposites, and submicrometer‐sized ellipsoidal UC particles cemented together. FT‐IR showed that a ‐CA chelated structure was firstly obtained, achieving the molecular scale mixing of uranium and C. Then the in situ charring guaranteed the intimate contact of UO₂ and C, leading to a low reaction temperature in carbothermal reduction owing to a short diffusion distance.     

Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO3–Na0.5Bi0.5TiO3–Nb2O5 X8R Systems

In this study, we reported a new BaTiO₃–Na_0.5Bi_0.5TiO₃–Nb₂O₅–Mn₂O₃/Fe₂O₃/Co₃O₄/In₂O₃ X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy ( ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the concentration, which can be confirmed by the dielectric behavior and A_1g octahedral breathing modes in Raman spectrum. In addition, the activation energy of diffusion is greatly reduced with the increase in concentration. It was found that the remnant polarization and coercive field were both decreased with increasing concentration, due to the facilitated defect dipoles reorientation and domain switching.     

Structure and Microwave Dielectric Behavior of A‐Site‐Doped Sr(1−1.5x)CexTiO3 Ceramics System

The ion valence state, phase composition, microstructure, and microwave dielectric properties of Sr_(1?1.5x)Ce_xTiO₃ (x = 0.1–0.67, SCT) ceramics were systematically investigated. Sr_(1?1.5x)Ce_xTiO₃ ceramics were produced with gradual structural evolution from a cubic to a tetragonal and turned to an orthorhombic structure in the range of 0.1 ≤ x ≤ 0.67. Above a critical Ce proportion (x = 0.4), microstructural changes and normal grain growth initially occurred. On the basis of chemical analysis results, the reduction of Ti⁴⁺ ions was hastened by tetravalent ions (Ce⁴⁺). By contrast, this reduction was inhibited by trivalent ions (Ce³⁺). The observed dielectric behavior was strongly influenced by phase composition, oxygen vacancies (), and defect dipoles, namely, () and (). Temperature stable ceramics sintered at 1350°C for 3 h in air yielded an intermediate value of dielectric constant (ε_r = 40), with the smallest reported value of temperature coefficient of resonant frequency (τ_f = +0.9 ppm/°C), and quality factor (Q × f = 5699 GHz) at x = 0.6.     

Electrical Properties and Relaxor Phase Evolution of Li‐Modified BNT‐BKT‐BT Lead‐Free Ceramics

By conventional ceramics sintering technique, the lead‐free 0.85Bi_0.5Na_0.5(1?x)Li_0.5xTiO₃‐0.11Bi_0.5K_0.5TiO₃‐0.04BaTiO₃ (x =0–0.15) piezoelectric ceramics were obtained and the effects of Li dopant on the piezoelectric, dielectric, and ferroelectric properties were studied. With increasing Li addition, the temperature‐dependent permittivity exhibited the normal ferroelectric‐to‐ergodic relaxor (FE‐to‐ER) transition temperature (T_FE‐ER, abbreviated as T_F‐R) decreasing down to room temperature. The increasing Li content also enhanced the diffuseness of the FE‐to‐ER transition behavior. For composition with x = 0.15, a large unipolar strain of 0.37% ( = S_max/E_max = 570 pm/V) was achieved under 6.5 kV/mm applied electric field at room temperature. Both unipolar and bipolar strain curves related to the temperature closely, and when the temperature reached the T_F‐R, the normalized strain achieved a maximum value (e.g., for x = 0.10, = 755 pm/V) owing to the electric‐field‐induced ER‐to‐FE state transition.     

Sillimanite‐mullite transformation observed in synchrotron X‐ray diffraction experiments

High‐resolution synchrotron powder X‐ray diffraction (XRD) experiments were conducted to clarify the transformation of sillimanite to mullite (mullitization) and determine the mullitization temperature (T_c). We were able to distinguish sillimanite and mullite in the XRD patterns, despite their very similar crystallographic parameters, and to detect the appearance of small mullite peaks among sillimanite peaks. Analysis of the Johnson‐Mehl‐Avrami (JMA) equation for mullitization ratio (ζ) revealed that at temperatures T≥1240°C the mullitization had the same kinetics. The activation energy E at T≥1240°C obtained from the Arrhenius plot was 679.8 kJ mol^?1. In analysis using a time‐temperature‐transformation diagram for mullitization, a mullitization curve of ζ=1% can be described as where t is time, n is a reaction‐mechanism‐dependent parameter determined as 0.324 by JMA‐analysis, k₀ is the frequency factor, E_A is the activation energy for atomic diffusion, and represents the activation energy for nucleation. The results of fitting the data to this equation were T_c=1199°C, A=3.9×10⁶ kJ mol^?1 K^?2, E_A=605 kJ mol^?1, and k₀=3.65×10¹⁵. We conclude that the boundary between sillimanite and mullite+SiO₂ in the phase diagram is ~1200°C.     

Temperature stability and electrical properties of MnO‐doped KNN‐based ceramics sintered in reducing atmosphere

Lead‐free MnO‐doped 0.955K_0.5Na_0.5NbO₃‐0.045Bi_0.5Na_0.5ZrO₃ (abbreviate as KNN‐0.045BNZ) ceramics have been prepared by a conventional solid‐state sintering method in reducing atmosphere. The MnO addition can suppress the emergence of the liquid phase and improve the homogenization of grain size. All ceramics sintered in reducing atmosphere show a two‐phase coexistence zone composed of rhombohedral (R) and tetragonal (T) phase. MnO dopant results in the content increase in R phase and slight increase in Curie temperature T_C. For KNN‐0.045BNZ ceramics, Mn²⁺ ions preferentially occupy the cation vacancies in A‐site to decrease oxygen vacancy concentration for 0.2%‐0.4% MnO content, whereas Mn²⁺ ions substitute for Zr⁴⁺ ions in B‐site to form oxygen vacancies at x ≥ 0.5. The defect dipole is formed at the moderate concentration from 0.5 to 0.6, which can provide a preserve force to improve the temperature stability of piezoelectric properties for k_p and . The Mn0.4 ceramics show excellent electrical properties with quasistatic piezoelectric constant d₃₃ = 300 pC/N, electromechanical coupling coefficient k_p = 51.2%, high field piezoelectric constant  = 430 pm/V (at E_max = 25 kV/cm) and T_C = ~345°C, insulation resistivity ρ  =  6.13 × 10¹¹ Ωcm.     

Composition‐induced structural transitions and enhanced strain response in nonstoichiometric NBT‐based ceramics

In this work, the nonstoichiometric 0.99Bi_0.505(Na_0.8K_0.2)_0.5‐xTiO₃‐0.01SrTiO₃ (BNKST(0.5‐x)) ceramics with x=0‐0.03 were synthesized by conventional solid‐state reaction method. The composition‐induced structural transitions were investigated by Raman spectra, dielectric analyses, and electrical measurements. It is found that the relaxor phase can be induced through the modulation of the (Na, K) content. The (Na, K) deficiency in BNKST(0.5‐x) ceramics favors a more disordered local structure and can result in the loss of long‐range ferroelectricity. The x=0.015 critical composition possesses relatively high positive strain S_pos of 0.42% and large signal piezoelectric constant d₃₃* of 479 pm V^?1 at 6 kV mm^?1, along with the good temperature (25‐120°C) and frequency (1‐20 Hz) stability. The recoverable large strain responses in nonstoichiometric ceramics can be attributed to the reversible relaxor‐ferroelectric phase transition, which is closely related to the complex defects (, , and ) and the local random fields. This work may be helpful for the exploration of high‐performance NBT‐based lead‐free materials by means of A‐site compositional modification.     

Stability and Decomposition of Ca‐Substituted Lanthanum Ferrite in Reducing Atmospheres

Calcium‐substituted lanthanum ferrites (La_1?xCa_xFeO_3?δ x = 0, 0.1, 0.2, 0.3, 0.4) were synthesized in air and subsequently decomposed in reducing atmospheres. The partial pressure of oxygen () was controlled by varying the H₂/H₂O ratio by bubbling hydrogen/argon mixtures through water baths at controlled temperatures. Three regions of mass loss were identified as the was reduced, two of which were determined to be associated with decomposition reactions. Calcium was shown to decrease the thermal stability of the perovskite compound, but rather than incrementally increasing the required for decomposition proportional to calcium concentration, all samples partially decomposed at a single . The extent of the partial decomposition was dependent on the amount of calcium substitution and temperature. The perovskite phase remaining after the partial decomposition was found to fully decompose at the same oxygen partial pressure as pure lanthanum ferrite.     

Long‐Range Ordered Structure of Ti–B–C–N in a TiB2–TiCxN1−x Eutectic Composite

A TiB₂–TiC_xN_1?x quasi‐binary eutectic composite, with a rod‐like faceted texture and a long‐range ordered structure of Ti–B–C–N, was prepared by the arc‐melting of TiB₂, TiC, and TiN powders. Hexagonal single‐crystalline TiC_xN_1?x rods were grown in a single‐crystalline TiB₂ matrix with a crystal orientation relationship of TiB₂ //TiC_xN_1?x and TiB₂ [0001]//TiC_xN_1?x [111]. A long‐range ordered structure of Ti–B–C–N was formed by the intermixing of the coherent interplanar spacings of seven TiB₂ (0001) and nine TiC_xN_1?x (111) planes.     

Phase Equilibria in the ZrO2–MgO–MnOx System

Phase equilibria were experimentally investigated in the MgO–MnO_x and the ZrO₂–MgO–MnO_x systems for different oxygen partial pressures by powder X‐ray diffractometry, scanning electron microscopy, and differential thermal analysis. The formation of two compositionally and structurally different β‐spinel solid solutions was observed in the MgO–MnO_x system in air in the temperature interval 1473–1713 K. Isothermal sections of the ZrO₂–MgO–MnO_x phase diagram were constructed for air conditions ( = 0.21 bar) at 1913, 1813, 1713, 1613, and 1523 K. In addition, isothermal sections at 1913 and 1523 K were constructed for = 10^?4 bar. The β‐spinel and halite phases of the MgO–MnO_x system were found to dissolve up to 2 and 5 mol% ZrO₂. A continuous c‐ZrO₂ solid solution forms between the boundary ZrO₂–MnO_x and ZrO₂–MgO systems. It stabilizes in the ZrO₂–MgO–MnO_x system down to at least 1613 K in air and down to 1506 K at = 10^?4 bar.     

Voltage‐Dependent Bulk Resistivity of SrTiO3:Mg Ceramics

Single phase ceramics of composition Sr(Ti_1–xMg_x)O_3–x: 0 ≤ x ≤ 0.01 were prepared by sol–gel synthesis and characterized by X‐ray diffraction, scanning electron microscopy, impedance spectroscopy, and current–voltage measurements. The bulk and grain‐boundary conductivities increase on application of a small dc bias voltage in the range 3–200 V/cm and at temperatures in the range 150°C–800°C. A qualitatively similar increase in conductivity occurs on increasing in the surrounding atmosphere, which shows that conduction is p type. The conductivity increase is reversible on removal of the dc bias or on reducing and is not observed in undoped SrTiO₃. It is an intrinsic property of the bulk material, differs from the voltage‐dependent effects observed with varistors and is attributed to changes in redox equilibria between oxygen species at the surface which cause changes in carrier concentration in the interior. A capacitive model of this low‐field dc bias effect is presented and compared with a memristive model of high field resistance degradation.     

Microstructure and Magnetic Properties of Metastable RFeO3 (R: Rare‐earth element) Formed from Undercooled Melt

Containerless levitation technique, where the undercooling can be treated as one of the major thermodynamic parameters, was used to study the influence of oxygen partial pressure () on the microstructure and physical properties of rare‐earth orthoferrites RFeO₃ (where R = Rare‐earth element) in the ranges from 10⁵ to 10^?1 Pa. The microstructure of the as‐solidified samples changed into orthorhombic RFeO₃ (o‐RFeO₃), metastable hexagonal RFeO₃ (h‐RFeO₃), and Fe²⁺‐containing RFe₂O₄ and a new metastable R₃Fe₂O₇ phases with decreasing . The effect of on the magnetic properties was indicated as that the saturation magnetization gradually increased for R = La to Yb and decreased for R = Lu with decreasing due to the formation of metastable and magnetic phases such as Fe₃O₄ and Fe.     

Diffusion Kinetics of Indium in TiO2 (Rutile)

This work determines the self‐diffusion coefficients of indium in TiO₂ single crystal (rutile). Diffusion concentration profiles were imposed by deposition of a thin surface layer of InCl₃ on the TiO₂ single crystal and subsequent annealing in the temperature range 1073–1573 K. The diffusion‐induced concentration profiles of indium as a function of depth were determined using secondary ion mass spectrometry (SIMS). These diffusion profiles were used to calculate the self‐diffusion coefficients of indium in the polycrystalline In₂TiO₅ surface layer and the TiO₂ single crystal. The temperature dependence of the respective diffusion coefficients, in the range 1073–1573 K, can be expressed by the following formulas: and The obtained activation energy for bulk diffusion of indium in rutile (316 kJ/mol) is similar to that of zirconium in rutile (325 kJ/mol). The determined diffusion data can be used in selection of optimal processing conditions for TiO₂–In₂O₃ solid solutions.     

Estimation of Stress Exponent and Activation Energy for Rapid Densification of 8 mol% Yttria‐Stabilized Zirconia Powder

The rapid densification behavior of 8 mol% Y₂O₃‐stabilized ZrO₂ polycrystalline (8Y‐SZP) powder compacts at the initial stage of pressure sintering (relative density () below 0.92) has been investigated using an electric current‐activated/assisted sintering (ECAS) system. Data points corresponding to a fixed heating rate were extracted from the densification rate () versus ρ and versus temperature (T) curves. These curves were obtained experimentally by consolidation at a fixed current. Under fixed current ECAS, the heating rate () decreases continuously over sintering time. Using a quasi‐ constant heating rate (CHR) method, data points were extracted to plot vs. ρ, vs. T, and ρ vs. T curves at a fixed . The stress exponent (n), estimated from a log‐log plot of grain size (d)‐corrected /ρ and effective stress (σ_eff) at 1300–1400 K, shows an almost constant value of 1. In addition, the activation energy (Q) for rapid densification, estimated from an Arrhenius plot of d‐corrected /ρ also shows an almost constant value of 350 kJ/mol, which is considerably lower than the previously reported value of the activation energy for Zr⁴⁺ lattice diffusion of about 440 kJ/mol. These results suggest that rapid densification of 8Y‐SZP by ECAS seems to proceed by diffusional creep controlled by grain‐boundary diffusion of Zr⁴⁺ ions.     

A piezomicrobalance system for high‐temperature mass relaxation characterization of metal oxides: A case study of Pr‐doped ceria

A system for mass relaxation studies based on a gallium phosphate piezocrystal microbalance has been developed, built, and successfully used to characterize a representative mixed ionic and electronic conducting material. The apparatus is constructed to achieve reactor gas exchange times as short as 2 seconds and temporal resolution in mass measurement of 0.1 seconds. These characteristics enabled evaluation of mass relaxations that occurred on the 6 seconds time scale. Proof of concept for materials characterization capabilities of the system was carried out using 10% praseodymium‐doped cerium oxide (PCO), a material that undergoes, at selected temperatures and oxygen partial pressures, changes in mass but not in conductivity. Thin films were deposited on the piezocrystals via pulsed laser deposition (PLD). Mass relaxation curves were collected at 700°C upon application of a small step change in oxygen partial pressure, . Using two different films, the surface reaction constant, k_S, was obtained over the range from 10^?4 to 0.1 atm. Its value is found to vary between 9.7 × 10^?6 and 1.7 × 10^?4 cm/s, displaying a power law dependence on , with a law exponent of 0.67 ± 0.02, as averaged over the two sets of results. This steep dependence of k_S on is surprisingly independent of a change in dominant defect type within the range of measurement.