Ultra-low fired fluoride composite microwave dielectric ceramics and their application for BaCuSi2O6-based LTCC

A total of 14 fluoride composite ceramics were prepared through solid-state method and their microwave dielectric properties were investigated. Among the fluoride composite ceramics, 0.36LiF–0.39MgF₂–0.25SrF₂ (LMS) had the lowest sintering temperature (600°C) and presented a dielectric constant (ε_r) of 6.24 ± 0.05, a quality factor (Q × f) of 33 274 ± 900 GHz, and a temperature coefficient resonant frequency (τ_f) of −86.74 ± 8 ppm/°C. As the LMS ceramic had a low melting point (646°C), it can be used as sintering aid for LTCC applications. The sintering temperature of BaCuSi₂O₆ decreased from 1050°C to 875°C with 2 wt% LMS doped and excellent microwave dielectric properties of ε_r = 8.16 ± 0.04, Q × f = 24 351 ± 300 GHz, and τ_f = −9.74 ± 1 ppm/°C were obtained. Moreover, BaCuSi₂O₆-2 wt% LMS can be co-fired with Ag powders, which makes it a potential new candidate for LTCC applications.     

Structure and microwave dielectric properties of Ba1−xSrxMg2V2O8 ceramics

The Ba_1−xSr_xMg₂V₂O₈ (0≤x≤0.4) microwave dielectric ceramics were fabricated by a standard solid-state reaction method. The formation of a continuous solid solution within the whole composition range was identified. The ceramic samples could be well densified in the temperature range of 885–975 °C in air for 4 h. The permittivity ε_r was found to increase with increasing ionic polarizabilities. The Q×f values were believed to be closely related with packing fraction and grain refinement. The Sr²⁺ substitution contributed to a monotonous increase of the A-site bond valence, such that the τ_f value experienced a considerable variation from negative to positive values. The optimum microwave dielectric properties of an ε_r of 13.3, a high Qxf of 86,640 GHz (9.6 Hz) and a near-zero τ_f of −6 ppm/°C could be yielded in the x=0.15 sample when sintered at 915 °C for 4 h.     

Effects of ionic polarizability and crystal structure on microwave dielectric properties of RE2O3 (RE = La,Eu) ceramics with opposite τf and high Q

Hexagonal La₂O₃ and monoclinic Eu₂O₃ ceramics were prepared, and their microwave dielectric properties were investigated. La₂O₃ sintered at 1400 °C exhibited promising microwave dielectric properties of ε_r = 18.6, Q×f = 71,400 GHz, and a negative τ_f of − 35.1 ppm/°C, while Eu₂O₃ sintered at 1500 °C possessed relative lower ε_r and Q×f values of 17.9 and 35,000 GHz, respectively, with an abnormally positive τ_f of + 19.6 ppm/°C. The difference in their microwave dielectric properties is mainly due to lattice-induced strain, which can be characterized by bond valence. To investigate the degradation of RE₂O₃ (RE = La, Eu) ceramics in air, a series of La_2−xEu_xO₃ (x = 0.5, 1, and 1.5) ceramics were prepared. The results of the present study suggest that the introduction of Eu³⁺ effectively prevents the decomposition of La₂O₃.     

Crystal structure,phase compositions,and microwave dielectric properties of malayaite-type Ca1−xSrxSnSiO5 ceramics

Low-permittivity Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.45) microwave dielectric ceramics were prepared via traditional state-reaction at 1400°C-1450°C for 5 hours. Moreover the microwave dielectric properties of SnO₂ ceramic were obtained for the first time. SnO₂ ceramic was difficult to densify, and SnO₂ ceramic (ρ_rel = 65.1%) that was sintered at 1525°C exhibited the optimal microwave dielectric properties of ε_r = 5.27, Q × f = 89 300 GHz (at 14.5 GHz), and τ_f = −26.7 ppm/°C. For Ca_1−xSr_xSnSiO₅ (0 ≤ x ≤ 0.15) ceramics, Sr²⁺ could be dissolved in the Ca²⁺ site of Ca_1−xSr_xSnSiO₅ to form a single phase, and the partial substitution of Ca²⁺ by Sr²⁺ could improve the microwave dielectric properties of CaSnSiO₅ ceramic. Secondary phases (SnO₂ and SrSiO₃) appeared at 0.2 ≤ x ≤ 0.45 and could adjust the abnormally positive τ_f value of CaSnSiO₅ ceramic. The highest Q × f value (60 100 GHz at 10.4 GHz) and optimal microwave dielectric properties (ε_r = 9.42, Q × f = 47 500 GHz at 12.4 GHz, and τ_f = −1.2 ppm/°C) of Ca_1−xSr_xSnSiO₅ ceramics were obtained at x = 0.05 and 0.45, respectively.     

Principal element design of garnets to access structure stability and excellent microwave dielectric properties

Guided by the tolerance factor and average electronegativity difference, two stable garnets with compositions Ca₃BTiGe₃O₁₂ (B = Mg, Zn) were designed, synthesized followed by structural, and dielectric characterization. The phase purity and structural characteristics were analyzed using X-ray, Rietveld refinement, and microstructural analysis through scanning electron microscopy. A cubic structure with an Ia-3d space group was confirmed for synthesized compositions. A combination of microwave dielectric properties for both garnets suggested that Ca₃MgTiGe₃O₁₂ ceramic possessed a much higher quality factor (Q × f) ∼ 84 000 ± 3000 GHz coupled by a higher dielectric constant (ε_r) ∼ 12.97 ± 0.03, and a smaller temperature coefficient of resonance frequency (τ_f) ∼ −29.4 ± 1.5 ppm/°C compared to its Zn counterpart (Q × f ∼ 45 000 ± 2000 GHz, ε_r ∼ 12.84 ± 0.03, and τ_f ∼ −33.19 ± 1.6 ppm/°C). Such differences in dielectric performances were further explored utilizing packing fraction, ion polarizability, bond valence, Raman, and infrared spectrum to understand structure–property relationship.     

A low-permittivity microwave dielectric ceramic BaZnP2O7 and its performance modification

Complex pyrophosphates compounds have attracted much attention as promising candidates for substrate applications. In the work, a low-permittivity BaZnP₂O₇ ceramic was synthesized through solid-state reaction. The pure phase BaZnP₂O₇ was crystallized in the triclinic P−1 space group. Excellent microwave dielectric properties of the BaZnP₂O₇ ceramic with ε_r = 8.23, Qf = 56170 GHz, and τ_f = −28.7 ppm/°C were obtained at 870°C for 4 h. The substitution of Mg²⁺ for Zn²⁺ was found to have positive effects on grain morphology and dielectric properties. Optimized performance of ε_r = 8.21, Qf = 84760 GHz, and τ_f = −21.9 ppm/°C was yielded at 900°C for the BaZn₀.₉₈Mg_0.02P₂O₇ ceramic. Intrinsic dielectric properties of BaZn_1-xMg_xP₂O₇ ceramics were studied via Clausius–Mossotti equation and complex chemical bond theory.     

Bond ionicity,lattice energy,bond energy,and microwave dielectric properties of Ca1-xSrxWO4 ceramics

The Ca_1-xSr_xWO₄ (x?=?0, 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were fabricated through solid-state reaction, and the relationships among microwave dielectric properties of Ca_1-xSr_xWO₄, bond ionicity, lattice energy and bond energy were systematically investigated for the first time. The patterns of X-ray diffractions of Ca_1-xSr_xWO₄ presented tetragonal scheelite structure and no second phase appeared throughout the entire compositions. Dielectric properties of Ca_1-xSr_xWO₄ were proved to be related to the microstructures: dielectric constant (ε_r) of Ca_1-xSr_xWO₄ was dependent on the bond ionicity; the quality factor (Q×f₀) of Ca_1-xSr_xWO₄ was affected by W-site lattice energy when intrinsic loss is dominant; the temperature coefficient of resonant frequency (|τ_f|) would increase if B-site bond energy decreased. Ca_1-xSr_xWO₄ ceramic showed excellent microwave dielectric properties, ε_r =?9.42, Q×f₀ =?79876?GHz and τ_f =??18.8?ppm/°C when x?=?0.08 and sintered at 1100?°C for 4?h.     

Lattice structure and microwave dielectric properties of La[Al1−x(Mg0.5Ti0.5)x]O3 (x = 0-0.2)-based ceramics

La[Al_1−x(Mg_0.5Ti_0.5)_x]O₃ (LAMT, x = 0-0.2) ceramics were synthesized by the conventional solid-state reaction method and formed a solid solution. The pure solid solutions were recorded by X-ray diffraction (XRD) in every range. Relative permittivity (ε_r) and structural stability were greatly affected because the Al³⁺ site was replaced by [Mg_0.5Ti_0.5]³⁺. The total ionic polarizability gradually increased with x, and ε_r gradually increased. The trend of τ_f is due to the change in structural stability. The variation in Q × f value increased firstly and then decreased due to the change in the symmetric stretching mode of Al/MgTi–O. The optimum microwave dielectric properties of LAMT were obtained at x of 0.1 after sintering at 1650°C for 5 hours, and ε_r = 24.9, Q × f = 79 956 GHz, and τ_f = −33 ppm/°C. The CaTiO₃ have a large positive τ_f (+800 ppm/°C), thus, the τ_f achieved near zero when CaTiO₃ and LAMT (x = 0.1) ceramics were mixed with a certain molar mass, and the optimum microwave dielectric properties of 0.65CaTiO₃–0.35LaAl_0.9(Mg_0.5Ti_0.5)_0.1O₃ were as follows: ε_r = 44.6, Q × f = 32 057 GHz, and τ_f = +2 ppm/°C.     

Microwave dielectric properties of (Ba1−xSrx)(Mg0.5W0.5)O3 ceramics

The densification, microstructural evolution and microwave dielectric properties of (Ba_1−xSr_x)(Mg_0.5W_0.5)O₃ ceramics with x=0, 0.25, 0.5 and 0.75 are investigated in this study. The sintering temperature of the (Ba_1−xSr_x)(Mg_0.5W_0.5)O₃ is significantly reduced from 1575 °C to 1400 °C as the x value increases from 0 to 0.25 and 0.50; this result is accompanied by the formation of the (Ba_1−ySr_y)WO₄ phase and a small quantity of second phase surrounding the grains. The grain size of the (Ba_1−xSr_x)(Mg_0.5W_0.5)O₃ ceramics is increased by raising the Sr²⁺ content, which significantly lowers the sintering temperature. The microstructure of the (Ba_0.75Sr_0.25)(Mg_0.5W_0.5)O₃ ceramic displays the smallest average grain size of approximately 0.8 μm, with a narrow grain size distribution. Without long annealing time, very high Q×f values are obtained for the (Ba_1−xSr_x)(Mg_0.5W_0.5)O₃ ceramics sintered at 1400–1575 °C for a duration of only 2 h. The (Ba_0.75Sr_0.25)(Mg_0.5W_0.5)O₃ ceramic sintered at 1400 °C results in the best microwave dielectric properties, including ε_r of 20.6, Q×f of 152,600 GHz and τ_f of +24.0 ppm/°C.     

Correlation between structural characteristics and microwave dielectric properties of walstromite BaCa2M3O9 (M = Si,Ge) ceramics

Novel BaCa₂M₃O₉ (M = Si, Ge) microwave dielectric ceramics were prepared via solid-state reaction with sintering at 1125°C–1275°C for 5 h. Single-phase BaCa₂M₃O₉ (M = Si, Ge) ceramics were obtained according to stoichiometry. The single-phase BaCa₂Ge₃O₉ ceramic was confirmed through Rietveld refinement and high-resolution transmission electron microscopy/selected area electron diffraction and synthesized for the first time. The BaCa₂M₃O₉ (M = Si, Ge) exhibited a triclinic structure with a P$\overline{1}$ space group and good microwave dielectric properties. The ε_r, Q × f, and τ_f values of BaCa₂M₃O₉ (M = Si, Ge) ceramics are mostly dominated by the relative density, ionic polarizability, relative covalence, and bond energy of M–O bond, respectively. A high Q × f value (61 800 GHz at 16.3 GHz) was obtained in BaCa₂Ge₃O₉ ceramic due to its high r_c (Ge–O) and low intrinsic dielectric loss. The BaCa₂Si₃O₉ ceramic exhibited small |τ_f| value (‒36.4 ppm/°C) due to its large E_Si-O. Excellent microwave dielectric properties (ε_r = 8.31, Q × f = 61 800 GHz, and τ_f = ‒58.7 ppm/°C) were obtained for the BaCa₂Ge₃O₉ ceramic.     

A novel low permittivity microwave dielectric ceramic Sr2Ga2SiO7 for application in patch antenna

The dielectric properties of a Ga-based melilite type ceramic Sr₂Ga₂SiO₇ via theoretical prediction based on far-infrared spectroscopy and experimental measurement by the Hakki–Coleman method were studied in this work. Dense and single-phase ceramics were fabricated via solid-state reaction at 1330°C and exhibited comprehensive microwave dielectric properties (ε_r ∼ 7.6, Q × f ∼ 23 600 GHz, and τ_f ∼ −35.2 ppm/°C) at 14.3 GHz. Chemical modifications were proposed to adjust the thermal stability and reduce the densification temperature. By adding 10 mol% CaTiO₃, the negative τ_f can be compensated to a near-zero value of −3.8 ppm/°C. The densification temperature was reduced to 940°C by adding 3 wt.% LiF. A patch antenna was designed using Sr₂Ga₂SiO₇ ceramic with a high radiation efficiency of 99.1% and a gain of 2.788 dBi at the center frequency of 4.371 GHz. All results indicate that the Sr₂Ga₂SiO₇ ceramic has promising application potential for 5G wireless communication technology.     

Microwave dielectric characteristics of 0.75(Al1/2Ta1/2)O2–0.25(Ti1−xSnx)O2 ceramics

The microwave dielectric characteristics of 0.75(Al_1/2Ta_1/2)O₂–0.25(Ti_1−xSn_x)O₂ ceramics were investigated. The microwave dielectric properties of 0.75(Al_1/2Ta_1/2)O₂–0.25TiO₂ sintered at 1450 °C exhibited a dielectric constant (ϵ_r) of 31.2, a Q·f₀ of 54,590 GHz, and the temperature coefficient of resonant frequency (τ_f) of +12.8 ppm/°C. To control of the τ_f and enhance the Q·f₀ for 0.75(Al_1/2Ta_1/2)O₂–0.25TiO₂, Sn⁴⁺ was substituted for Ti⁴⁺. With an increase of Sn content from 5 to 50 mol%, the ε_r slightly decreased, the Q·f₀ increased and the τ_f shifted from positive to negative value. The τ_f within ±10 ppm/°C of zero was realized for the Sn content below 30 mol% and the microwave dielectric properties had the ε_r value of 31.2–26.3, the Q·f₀ of 54,600–70,700 GHz, and τ_f of +12.8–−9.3 ppm/°C for this compositions. The relationship between microstructure and microwave dielectric characteristics was investigated.     

Structure and microwave dielectric characteristics of Sr2[Ti1−x(Al0.5Nb0.5)x]O4 (x ≤ 0.50) ceramics

Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ (x = 0, 0.10, 0.25, 0.30, 0.5) ceramics were synthesized by a standard solid-state reaction process. Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ solid solutions with tetragonal Ruddlesdon-Popper (R-P) structure in space group I4/mmm were obtained within x ≤ 0.50, and only minor amount (1-2 wt%) of Sr₃Ti₂O₇ secondary phase was detected for the compositions x ≥ 0.25. The temperature coefficient of resonant frequency τ_f of Sr₂[Ti_1−x(Al_0.5Nb_0.5)_x]O₄ ceramics was significantly improved from 132 to 14 ppm/°C correlated with the increase in degree of covalency (%) with increasing x. The dielectric constant ɛ_r decreased linearly with increasing x, while high Qf value was maintained though it decreased firstly. The variation tendency of Qf value was dependent on the trend of packing fraction combined with the microstructure. Good combination of microwave dielectric properties was achieved for x = 0.50: ɛ_r = 25.1, Qf = 77 580 GHz, τ_f = 14 ppm/°C. The present ceramics could be expected as new candidates of ultra-high Q microwave dielectric materials without noble element such as Ta.     

Improvement of microwave dielectric properties of the LiNb0.6Ti0.5O3 M-phase by doping with (Co1/3Nb2/3)4+

Structural evolution and microwave dielectric properties of LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ (.05≤x≤.2) ceramics have been studied in this paper. Although the doped compositions maintain the M-phase solid solutions, compositional fluctuation due to nonuniform dispersion of minor dopants could be observed as x < .05, and trace amount of Li₂TiO₃-based solid solution (Li₂TiO₃ss) secondary phase presents in the x > .05 compositions. The microwave dielectric properties could be remarkably improved by the doping of (Co_1/2Nb_1/2)⁴⁺ in comparison to the undoped counterpart. Optimized microwave dielectric properties with Q × f = ∼6500 GHz, ε_r = ∼74 and τ_f = +8.2 ppm/°C could be obtained at x = .10 after sintering at 1050°C/2 h. The sintering temperature could be further reduced to 900°C/2 h by adding .2 wt% B₂O₃ without affecting significantly its microwave dielectric properties: ε_r = 73, Q × f = 6000 GHz, τ_f = +8.5 ppm/°C. The LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ ceramics obtained in this case exhibit large dielectric permittivity coupled with much improved Q × f values, near zero τ_f, and low sintering temperature simultaneously, which makes it a promising high-k microwave dielectric material for low temperature cofired ceramic applications.     

Structure evolution of wolframite-type ZnZrC2O8 (C = Nb,Ta) ceramics in relation to microwave dielectric properties

The relationship among the sintering behavior, crystal structure, chemical bonding properties, and dielectric properties of wolframite-type ZnZr(Nb_1−xTa_x)₂O₈ (0.0 ≤ x ≤ 1.0) ceramics was investigated with the progressive replacement of Nb⁵⁺ by Ta⁵⁺. The optimum sintering temperature increases from 1225 to 1375°C with increasing Ta⁵⁺ content. The ε_r value falls from 27.34 to 22.34 due to a gradual decrease in bond ionicity and a shift in the Raman vibration modes toward higher wave numbers. The Q × f increases from 63 604 GHz (@6.71 GHz) to 115 631 GHz (@7.89 GHz), which is since the increase in the total lattice of chemical bonds. Moreover, the reduction in grain boundary area and the gradual lowering of the full width at half maximum of the Raman vibration modes contribute to the reduction in dielectric losses. First-principles calculations illustrate that the growth in bandgap and electron cloud density in the internal space of the [Zn/ZrO₆] octahedron leads to a reduction in dielectric loss. Furthermore, the reduced degree of oxygen octahedral distortion causes a change in τ_f from −46.56 to −37.40 ppm/°C.     

Low‐Temperature Sintering and Microwave Dielectric Properties of ZnNb2O6–TiO2 Ceramics with BaCu(B2O5) Additions

The influence of BaCu(B₂O₅) (BCB) on densification, phases, microstructure and microwave dielectric properties of ZnNb₂O₆–xTiO₂ (x = 1.70–1.90) composite ceramics have been investigated. Undoped ZnNb₂O₆–1.8TiO₂ ceramics sintered at 1200°C exhibit temperature coefficient of resonant frequency (τ_f) ~9.25 ppm/°C. When BaCu(B₂O₅) was added, the sintering temperature of the ZnNb₂O₆–1.8TiO₂ composite ceramics was effectively reduced to 950°C. The results indicated that the permittivity and Q × f were dependent on the sintering temperature and the amounts of BaCu(B₂O₅). Addition of 3.0 wt% BaCu(B₂O₅) in ZnNb₂O₆–1.8TiO₂ ceramics sintered at 950°C showed excellent dielectric properties of ε_r = 40.9, Q × f = 12,200 GHz (f = 5.015 GHz) and τ_f = +0.3 ppm/°C.     

Effects of sintering parameters and Nd doping on the microwave dielectric properties of Y2O3 ceramics

Y₂O₃ ceramics with good dielectric properties were prepared via co-precipitation reaction and subsequent sintering in a muffle furnace. The effects of Nd doping and sintering temperature on microwave dielectric properties were studied. With the increase in sintering temperature, the density, quality factor (Q×f), and dielectric constant (ε_r) values of pure Y₂O₃ ceramics increased to the maximum and then gradually decreased. The Y₂O₃ ceramics sintered at 1500 °C for 4 h showed optimal dielectric properties: ε_r=10.76, Q×f=82, 188 GHz, and τ_f=−54.4 ppm/°C. With the addition of Nd dopant, the Q×f values, ε_r, and τ_f of the Nd: Y₂O₃ ceramics apparently increased, but excessive amount degraded the quality factor. The Y₂O₃ ceramics with 2 at% Nd₂O₃ sintered at 1460 °C displayed good microwave dielectric properties: ε_r=10.4, Q×f=94, 149 GHz and τ_f=−46.2 ppm/°C.     

The structure evolution and lattice energy of spinel-structured Li(Mg0.5Ti0.5)xGa5−xO8 microwave dielectric ceramics

The microwave dielectric properties of spinel-structured Li(Mg_0.5Ti_0.5)_xGa_5−xO₈ (0 ≤ x ≤ 1) ceramics were researched together with their microstructures. The X-ray diffraction and Raman spectroscopic revealed that an ordered spinel structure in 1: 3 B-site ordering with space group P4₃32 was formed in the composition range of 0 = x ≤ 0.25, and a disordered spinel with space group Fd-3m was formed in 0.5 = x ≤ 1. All the ceramics were compact with uniform grain, clear grain boundaries and high relative density (ρ_relative ≥ 95 %). With the substitution of [Mg_0.5Ti_0.5]³⁺ for Ga³⁺ increased, the dielectric constant (ε_r) increased from 10.48 to 11.28, which was related to the increased molar ionic polarizability (α_theo/V_m) and B-site bond ionicity. The temperature coefficient of the resonant frequency (τ_f) slightly increased from −66.27 ppm/°C to −61.45 ppm/°C, due to the decrease of B-site bond valence. The Q × f value firstly decreased from 125,400 GHz to 50,381 GHz and then increased to 85,360 GHz, which was affected by the intrinsic loss analyzed by lattice energy. The optimal microwave dielectric properties were obtained for LiMg_0.5Ti_0.5Ga₄O₈ ceramic (x = 1) sintered at 1260 °C with ε_r = 11.28, Q × f = 85,360 GHz and τ_f = −61.45 ppm/°C.     

Effects of adding B2O3 on microwave dielectric properties of 0.9625MgTiO3-0.0375(Ca0.5Sr0.5)TiO3 composite ceramics

A series of 0.9625MgTiO₃-0.0375(Ca_0.5Sr_0.5)TiO₃ composite ceramics added with different amounts of B₂O₃ (1-5 wt%) were prepared via the solid state sintering method using the pre-synthesized raw MgTiO₃ and (Ca_0.5Sr_0.5)TiO₃ powders by molten-salt reaction. The sintering temperature of 0.9625MgTiO₃-0.0375(Ca_0.5Sr_0.5)TiO₃ composite ceramics can be reduced from 1275°C to 1175°C due to the liquid phase sintering effect of B₂O₃. When the adding amount of B₂O₃ was more than 2 wt%, a new phase MgTi₂O₅ could be detected by X-ray diffraction, which would substantially degrade the dielectric properties of the obtained ceramics. Resultantly, the quality factor (Q·f) and dielectric constant (ε_r) of the samples increase first and decrease later with increasing addition amount of B₂O₃. In addition, the temperature coefficient of resonant frequency (τ_f) progressively increases with increasing content of B₂O₃. By sintering at 1175°C for 4 hours, the obtained 0.9625MgTiO₃-0.0375Ca_0.5Sr_0.5TiO₃ composite ceramics with 2 wt% B₂O₃ possess the optimal microwave dielectric properties of ε_r = 18.9, Q·f = 57 000 GHz and τ_f = −1.2 ppm/°C.     

Structure,microwave dielectric performance,and infrared reflectivity spectrum of olivine-type Mg2Ge0.98O4 ceramic

An ultra-low dielectric loss ceramics Mg₂Ge_0.98O₄ with olivine structure was fabricated by conventional solid-state route. The phase composition, crystal structure, and microwave dielectric properties were investigated. The phase of Mg₂Ge_0.98O₄ is formed to the orthorhombic forsterite structure with a space group Pmnb (62). The dense microstructure and excellent microwave dielectric properties of Mg₂Ge_0.98O₄ ceramic were obtained at 1360°C for 4 hours, with relative density ~96.4%, ε_r ~ 7.3, Q × f = 112 400 GHz, and τ_f ~ −64.6 ppm/°C. The conductive mechanism of Mg₂Ge_0.98O₄ in the low frequency (<1 MHz) was studied by the dielectric spectroscopy and the result with E_dc = 0.93 eV demonstrates that the defect was contributed to the double ionized oxygen vacancies. The intrinsic dielectric properties of Mg₂Ge_0.98O₄ in the microwave region were obtained by infrared reflectivity spectra with ε_r ~ 7.13, Q × f = 120 400 GHz. And, acceptable τ_f (~+2.6 ppm/°C) of 0.92Mg₂Ge_0.98O₄–0.08CaTiO₃ composite ceramic was obtained by adding the CaTiO3.