Optical dispersion and bandgap of pure and Mn-doped 0.92Na0.5Bi0.5TiO3-0.08K0.5Bi0.5TiO3 lead-free single crystals

Optical properties of lead-free ferroelectric pure and Mn-doped 0.92Na_0.5Bi_0.5TiO₃-0.08K_0.5Bi_0.5TiO₃ (NBT-8KBT) single crystals have been investigated systematically. Refractive index and extinction coefficient were measured and the critical parameters are obtained by modified Sellmeier dispersion equations and single-oscillator dispersion relation. The decline of refractive index for Mn:NBT-8KBT could be related to the lattice distortion of the Mn ions doping. High transmittance (>70%) over the transparent region (>400 nm) was found in the pure NBT-8KBT, higher than that of Mn:NBT-8KBT, which could be caused by the increase of domain wall density. An about 100 nm red-shift of absorption edge was observed in the Mn:NBT-8KBT single crystal, which is located in the visible region. Optical bandgap energies calculated through Tauc equation and a large bandgap difference of 2.96 and 2.62 eV occurs in the NBT-8KBT and Mn:NBT-8KBT, respectively, which illustrates the modulation of the band structures by Mn doping.     

Role of Bismuth incorporation on the structural and optical properties in BixIn35-xSe65 thin films for photonic applications

The present paper investigated the influence of Bi concentration on the structural, linear, and non-linear optical properties of thermally evaporated Bi_xIn_35-xSe₆₅ (x = 0, 5, 7, 10, 15 at %) thin films. The structural analysis by the XRD measurements showed the crystalline nature at 7 and 15% Bi while the other concentrations showed amorphous nature. The corresponding bonding change was analyzed by Raman spectroscopy. The optical study by UV-Vis spectroscopy showed the decrease in transmittance and an increase in absorbance property. The linear optical parameters such as absorption coefficient, extinction coefficient, optical density increased while skin depth decreased with Bi additives. The direct, as well as the indirect optical bandgap, decreased along with the decrease in the Tauc parameter. The variation is well explained on the basis of density of defect states by the Mott and Davis model. The non-linear refractive index and non-linear susceptibility increased significantly with Bi % which is good for non-linear optical applications. The static linear refractive index as calculated by the Dimirov and Sakha empirical relation showed an incremental behavior with Bi% concentration and satisfied Moss's rule. The surface structure and elemental concentration were analyzed by FESEM and EDX analysis. The result of the above investigation suggests that these materials can be used as an absorbing layer for several optoelectronic and photonic applications.     

Role of tellurium addition on the linear and non-linear optical,structural, morphological properties of Ag60-xSe40Tex thin films for nonlinear applications

The tellurium (Te)-doped Ag_60-xSe₄₀Te_x (x = 0%, 5%, 10%, 15%) thin films of thickness ∼800 nm were prepared from the bulk sample by thermal evaporation method on a glass substrate. The X-ray diffraction study revealed the amorphous nature of the films whereas the change in vibrational modes was noticed from the Raman spectroscopy. The composition of the films was verified by energy dispersive X-ray analysis and the surface morphology pictures were taken by field emission scanning electron microscopy and atomic force microscope. The changes in optical properties (linear and non-linear) with Te addition were studied from UV-Visible spectroscopy data and related empirical formulas. The addition of Te reduced the bandgap values significantly and the reduction in transmission resulted in the increase of the linear refractive index. The decrease in optical bandgap is due to an increase in disorder while the width of the tail in the gap increased with Te%. The optical density, dispersion energy, extinction coefficient, carrier concentration, dielectric constant, oscillator wavelength increased while the oscillator energy, oscillator strength, optical electronegativity decreased with Te content. The electrical susceptibility increased with Te content. The non-linear susceptibilities and the non-linear refractive index increased which is good for the nonlinear photonic devices.     

Dilute magnetic semiconductor of ZnCoSe thin films: Structural,optical, and magnetic characteristics

A series of Zn_1−xCo_xSe (x = 0, 0.025, 0.050, 0.075, and 0.100) films using were evaporated (thickness of 1 μm) using electron beam gun. The effect of Co doping on the structural, optical, and magnetic properties has been investigated. X-ray diffraction studies confirm formation of zinc blend structure for all Zn_1−xCo_xSe films. The crystallite size increases and the lattice strain decreases with the increase in Co content. The elemental constituents were characterized by energy dispersive X-ray. Optical studies showed an increase in refractive index and a decrease in energy gap with the increase in the cobalt doping. The dispersion of the refractive index has been analyzed in terms of the Wemple-DiDomenico single oscillator model. The oscillator parameters including the single oscillator energy (E_o), the dispersion energy (E_d), and the static refractive index (n₀) were estimated. Magnetization measurements via vibrating sample magnetometer showed a hysteresis loop and confirmed room-temperature ferromagnetism in Co-doped ZnSe films.     

Effect of Sb addition on SbxSn1-xS thin films: The structural,morphological, and linear/nonlinear optical changes for optoelectronic applications

The current paper reports the changes in the structural and optical properties of antimony-doped tin sulfide ternary (Sb_xSn_1-xS) (x = 0, 0.05, 0.1, 0.15, 0.2) thin films synthesized by the thermal evaporation technique on a glass substrate. Structural characterization techniques such as X-ray diffraction and Raman spectroscopy of the prepared sample revealed that the thin films are crystalline in nature. The nanoflake-like structure was found from the surface morphological analysis performed by field emission scanning electron microscopy. The concentration of the compositional elements was confirmed from the energy dispersive X-ray analysis. The linear and nonlinear optical parameters were calculated by using the transmission data obtained from UV–vis spectroscopy in the range of 800–1100 nm. The optical measurements showed an increase in transmittance and shifting of the absorption edge. The optical bandgap increased (1.239–1.378 eV) and the refractive index decreased with the increase of Sb concentration, satisfying the Moss rule. The nonlinear susceptibility and the nonlinear refractive index (n₂) decreased with Sb content. The changes in both linear and nonlinear parameters by varying the antimony doping concentration could be helpful for controlling the optical properties of Sb_xSn_1-xS thin films and could be a suitable candidate for many photonics and optoelectronic applications.     

Synthesis,structural, linear and nonlinear optical properties of chromium doped SnO2 thin films

The present work concentrates on some physical investigation of the undoped and Cr doped SnO₂ thin films deposited onto precleaned glass substrates by the spray pyrolysis system. The physical properties of the undoped and Cr doped SnO₂ thin films were investigated by the X-ray diffraction (XRD), atomic force electron microscope (AFM), field emission scanning electron microscope (FESEM), four-probe method and double beam spectrophotometer. The undoped and Cr doped SnO₂ films display a polycrystalline nature with orthorhombic crystal structure. The linear optical constants energy gap E_g, refractive index n, absorption coefficient α, static refractive index n_o, oscillation energy E_o, dispersion energy E_d and the Urbach energy of the undoped and Cr doped SnO₂ thin films were evaluated. The investigated films exhibit a direct energy gap and their values decrease with the increasing of Cr doping content while the Urbach energy follows a reverse behavior. On the other hand, the nonlinear optical constants (third-order nonlinear susceptibility ${\mathit{\chi }}^{(3)}$ and nonlinear refractive index n₂) have been increased with increasing the Cr doping content. Finally, it has been found that the sheet resistance and conductivity of the synthesized thin films were enhanced by increasing the Cr doping content. The 5?wt% Cr doped SnO₂ thin film has a high value of the figure of merit among other films.     

Structural,electrical, and linear/nonlinear optical characteristics of thermally evaporated molybdenum oxide thin films

Homogeneous thin films of Molybdenum oxide (MoO₃) were grown on quartz and glass substrates using the thermal evaporation method. XRD results showed that the MoO₃ powder has a polycrystalline structure with an orthorhombic crystal system whereas the MoO₃ thin films have amorphous nature. SEM images showed that the MoO₃ thin films have a nearly uniform surfaces with worm-like shape grains. The film thickness influences on the linear and nonlinear optical characteristics of MoO₃ thin films that were examined using spectrophotometric measurements and from which, the linear optical constants of the MoO₃ thin films were estimated. The electronic transition type was determined as a direct allowed one. The values of the optical band gap were obtained to be in the range of 3.88–3.72 eV. The dispersion parameters, third-order nonlinear optical susceptibility, and the nonlinear refractive index of the MoO₃ thin films were determined and interpreted in the light of the single oscillator model. The temperature dependence of the DC electrical conductivity and the corresponding conduction mechanism for the MoO₃ films were investigated at temperatures ranging from 303 to 463 K.     

AgSbTe2 semi-nanocrystalline thin films as a multifunctional platform for optoelectronic and diode applications

The synthesis of the nanosized multifunctional thin film provides new solutions for many technological issues and consider a great step for miniaturized technology. Toward these goals, AgSbTe₂ semi-nanocrystalline thin films of different thicknesses were synthesized by the thermal evaporation technique. The structural features were investigated by X-ray diffraction, and selected area electron diffraction (SAED) yielding a semi-nanocrystalline thin film of grain size ranging from 9.98 to 21.38 nm. The energy-dispersive X-ray spectroscopy (EDAX) verified the high purity and stoichiometry of the deposited films. For optoelectronic application, many optical parameters, including band gap (E_g), Urbach energy (E_u), Refractive index (n), dispersion energy (E_d), electronic polarizability (α_e), and interband transition strength (J_CV) were extensively discussed. The optical band gap reduced from 1.41 to 1.04 eV upon increasing the thickness from 150 to 550 nm. The temperature dependence of the electrical resistivity (ρ) of nanosized thin film was measured and the activation energy was estimated and it was found that the resistivity increased up to 450 K asserting the semiconductor behavior of the films. As for diode application, The Ag/2D-MoS₂/p-AgSbTe₂ (550 nm)/n-Si/Al heterostructure diode was constructed by thermal evaporation and all the diode parameters alongside conduction mechanism were studied in detail. AgSbTe₂-based diode showed a low rectification ratio; however, the ideality factor (n) and zero bias barrier height (Φ_b) had optimal values of about 1.40 and 0.75 at room temperature, respectively.     

Relaxor transition and properties of Mn-doped SrxBa1−xNb2O6 ferroelectric ceramics

Pure and Mn-doped Sr_xBa_1−xNb₂O₆ (SBN) ceramics were prepared by the conventional solid state reaction method and their morphology, phase structure, relaxor behavior, ferroelectric and energy storage properties were investigated to reveal the effects of Mn doping on their properties. The results show that all the samples are single tetragonal tungsten bronze structure and the Mn element having few influences on their microstructures. The dielectric constant of pure SBN samples shows a classical relaxor behavior with obvious frequency dispersion and fits well with the Vogel–Fulcher law. However, the dielectric constant of Mn-doped samples does not show frequency dispersion. Then the relaxor behaviors of both pure and doped samples were further investigated by fitting the dielectric constant to the modified Curie-Weiss law. It was found that the diffusion parameters (γ) of Mn-doped samples are close to those pure samples, which indicates that the Mn-doped samples still have relaxor characteristics even without the classical dielectric frequency dispersion. Compared with the pure samples, the Mn-doped samples have a slimmer polarization-electric field (P-E) hysteresis loop, which can also prove their relaxor behaviors. The investigations of energy storage properties reveal that the Mn-doped samples have a higher energy storage density and efficiency.     

Effect of withdrawal rate on the evolution of optical properties of dip-coated yttria-doped zirconia thin films

In this work, the Swanepoel method is described and applied for determining various optical parameters and thicknesses of dip–coated yttria–doped zirconia thin films. Using this method the influence of the withdrawal rate on optical parameters was studied. The characterization of the deposited thin films was carried out by optical microscopy and FT–IR spectrophotometry. As expected, coating thickness was closely related to the withdrawal rate and consequently influenced optical parameters such as refractive index, extinction coefficient, and absorption coefficient. Regarding the average refractive index of the prepared thin films, n is in the 2.0 – 2.2 range, the higher refractive index average value being obtained with films deposited at 25 mm min⁻¹ (n = 2.19). The value of the optical band gap was also studied, this increased with withdrawal rate and was quite similar to values reported by other investigators at 50, 25 and 10 mm min⁻¹. Thus, this study proposes analysing the influence of the withdrawal rate for the manufacture of different types of thin films with previously specified optical parameters.     

A novel B2O3-Na2O-BaO-HgO glass system: Synthesis,physical, optical and nuclear shielding features

In the current paper, we investigated the impacts of HgO addition on optical, structural and radiation shielding properties of newly developed BNBH glass system, with nominal composition (60-x)B₂O₃+20Na₂O+20BaO + xHgO, where x = 0, 2.5, 5, 7.5, 10, 12.5 and 15. BNBH glasses were produced by traditional melt quenching technique. The structure of the produced glasses was estimated employing XRD and TEM analyses and their amorphous natures were verified. The material densities of the investigated glass samples increased nearly linearly as the HgO concentration increased. The UV–visible absorption spectra of the HgO doped glasses were obtained and it is noticed that the absorption coefficient varies with the increase of HgO concentration. The optical absorption spectra were also utilized to found optical energy band gaps, refraction indices and Urbach's tail energy of the prepared glasses. It was observed that the E_g decrease with the increase of HgO content. Moreover, nuclear radiation shielding parameters of BNBH glasses with HgO additive were obtained for photons, charged particles, and neutrons. It was perceived that the insertion of HgO was improved the protecting competences of the glasses against several nuclear radiation types. The results of this comprehensive study revealed that HgO can be used in the design of new glass systems for shielding studies.     

Optical and Microwave Dielectric Properties of Phase Pure (K0.5Na0.5)NbO3 Thin Films Deposited by RF Magnetron Sputtering

(K_0.5Na_0.5)NbO₃ (KNN) thin films have been deposited onto Pt/Ti/SiO₂/Si and quartz substrates by RF magnetron sputtering. The films were deposited at 400°C with the variation in oxygen mixing percentage (OMP) ratio from 0% to 100% and annealed at 700°C in oxygen atmosphere. The crystallinity of the films is found to be increased with increased OMP. Dielectric properties of the films were examined over the frequency range from 1 kHz to 1 MHz and the temperature range of 30°C to 400°C. The Curie temperature of the films was found to be in the range 369°C–373°C. For the first time, the split postdielectric resonator (SPDR) method was used to measure the microwave (10–20 GHz) dielectric properties of KNN thin films. The optical properties of as‐deposited and annealed KNN thin films were investigated by means of transmittance spectra. The optical bandgap is calculated by using the Tauc relation, and found to be in the range 4.34–4.40 eV and 4.29–4.37 eV for the as‐deposited and annealed films, respectively. The refractive index (n_700nm) of the films found to be in the range 1.98–2.01 and 1.99–2.07 for as‐deposited and annealed films, respectively. The refractive index dispersion is analyzed by using Wemple–DiDomenico (W–D) single‐oscillator model. The effect of annealing and OMP on the refractive index, packing density and W–D parameters has been investigated. The average single oscillator energy (E_o) and dispersion energies (E_d) of the annealed KNN thin films are in the range of 6.17–7.16 eV and 18.77–22.19 eV, respectively. AC‐conductivity of the annealed films was analyzed by using double power law. Ag/KNN/Pt thin films followed the ohmic conduction (J ∝ E^α, where α ~1) and the low leakage current density obtained for the deposited at 100% O₂ is 3.14 × 10^?5 A/cm² at 50 kV/cm.     

Effect of Mn-doping on the morphological and electrical properties of (Ba0·7Sr0.3) (MnxTi1−x)O3 materials for energy storage application

Lead-free (Ba_0·7Sr_0.3) (Mn_xTi_1?x)O₃ (x = 0.0, 1.0, 2.0, 4.0, 6.0, and 8.0%) ceramics were effectively synthesized by the sol-gel process. XRD and Raman spectroscopy confirm the single-phase perovskite structure with tetragonal symmetry, for all compositions. An in-depth analysis of the chemical composition and thermochemistry of the ceramics was carried out via FT-IR and TG-DTG. Morphological analyses of the samples revealed that doping Mn at higher concentrations suppresses the grain size and grain growth rate. The dielectric properties increased first and then decreased with increasing Mn content. The ferroelectric properties represented similar trend in polarization and energy storage efficiency as showed in dielectric properties. 2% Mn-doped sample exhibits the best dielectric and energy storage performance which is attributed to increased densification and grain size effects. Dielectric anomaly caused by defect dipole polarization was observed in temperature-dependent dielectric constant curves, for 6% and 8% Mn-doped samples. This study is helpful to establish the relationship between the structure, morphology, dielectric and ferroelectric properties of Mn substituted Ba_0·7Sr_0·3TiO₃ ceramics.     

Optical and electrical analysis of polyethylene oxide/disodium hexachloroplatinate complex composite films

The present study reports the synthesis of composite films comprising PEO/Na₂PtCl₆ complex and their deposition onto fused silica substrates via the dip-coating method. Chemical, crystallographic, and thermal characterizations are carried out to confirm the incorporation of Na₂PtCl₆ and PEO matrix into the films. The transmittance of the PEO film is initially high and decreases subsquently with an increase in Na₂PtCl₆ content. The optical band-gap energy of the composite films decreases exponentially from 4.62 to 3.79 eV with the increase in Na₂PtCl₆ content. Furthermore, in the normal dispersion region, the refractive index of the PEO film decreases from 2.00 to 1.670 as the wavelength increases from 400 to 700 nm. The refractive index values increase with an increase in the concentration of Na₂PtCl₆ in the PEO film up to 8 wt.%. The incorporation of Na₂PtCl₆ into the PEO matrix increases the electrical conductivity because of the combined enhancement of the PEO conductivity and increase i Na₂PtCl₆. These findings suggest that PEO/Na₂PtCl₆ complex composite films have potential applications in UV-shielding and optoelectronic devices.     

Physical properties of La-doped NiO sprayed thin films for optoelectronic and sensor applications

Lanthanum-doped nickel oxide NiO:La thin films were deposited onto glass substrates at 450 °C, by the spray pyrolysis technique using nickel and lanthanum chlorides as precursors. These films belonging to cubic structure, crystallize preferentially along (111) plane. First, Raman study shows the presence of bands corresponding to NiO structure. The same study confirms the presence of both Ni(OH)₂ and LaNiO₃ as secondary phases. Moreover, using SEM observations, all samples exhibit porous microstructures with rough surfaces and spherical nanoparticles of about 40 nm as size. Second, NiO:La films present a direct band gap energy value lying in the range of 3.63–3.84 eV. Also, the effect of the La incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Some optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) are reached. On the other hand, the photoluminescence spectroscopy reveals the presence of peaks related to the electronic transition of the Ni²⁺ ions and others confirming the presence of some defects in NiO matrix in terms of La content. Finally, it has been found that La doping allows the improvement of the electrical conductivity as well as Haacke’s figure of merit of NiO sprayed thin films by at least, three orders of magnitude.     

Profound optical analysis for novel amorphous Cu2FeSnS4 thin films as an absorber layer for thin film solar cells

In this study, quaternary kesterite Cu₂FeSnS₄ (CFTS₄) has been selected due to its interesting optical and electrical characteristics. The CFTS₄ films were prepared by exploiting the chemical bath deposition process at room temperature. The films were prepared at different deposition periods (1, 3, 5 and 7 h). The EDAX technique was helped in evaluating the compositional element ratio which near to 2:1:1:4. The morphology and structure of CFTS₄ films have been examined by utilizing X-ray diffraction, and field emission scanning electron microscope techniques. XRD charts revealed the absence of sharp peaks and approved the amorphous nature of films under investigations. The transmittance and reflectance data were employed to compute the linear and nonlinear optical constants of the as-deposited CFTS₄ films. The energy gap calculations for the CFTS₄ films grown on glass substrate displayed a direct energy gap and by increasing the deposition time, a reduction in energy gap values from 1.41 to 1.19 eV was obtained. The deep analysis of linear/nonlinear optical properties as a function of deposition time has revealed many characteristics of the investigated films. Moreover, the nonlinear parameters (refractive index n₂, nonlinear absorption coefficient β_c and the third-order nonlinear optical susceptibility χ⁽³⁾) of the CFTS₄ films were boosted with rising up the film thickness and their high values imply the possibility of utilizing these films in various optoelectronic applications.     

Enhanced thermoelectric and optical response of Ag substituted Cu2O compositions for advanced applications

Cu₂O based semiconductor materials are promising candidates for modern electronic devices due to have excellent electronic and optical properties. In this work, pure and Ag doped Cu₂O structures were simulated using density functional theory in the framework of wien2k code with generalized-gradient-approximation under full potential linearized augmented plane wave approach. Experimentally, pure and Ag doped Cu₂O uniform thin films were successfully fabricated. The morphology and elemental compositions of thin films were investigated using field emission scanning electron microscopy and energy dispersive x-rays spectroscopy, respectively. X-ray diffraction analysis exhibited cubic phase having space-group 224-Pn-3m in all synthesized thin films. Total density of states spectra for Ag containing compositions present overlapping of states at Fermi level. Thermoelectric properties show a significant variation in various parameters with the change in temperature and Ag content in structure. The see-beck coefficient was observed to vary from 0.0002 to 0.00035 Vk⁻¹ for pure and Ag doped Cu₂O compositions. The optical parameters like extinction and absorption curves attains maximum values at higher photon energies. The refractive index presents an enhanced transmittance power with the increment in photon energy. The band gap was found to reduce from 2.33 eV to 1.99 eV with Ag doping attributed to the sharp increase in optical conductivity.     

Hysteretic properties of Mn-doped Pb(Zr,Ti)O3 thin films

Pb(Zr,Ti)O₃ (PZT 30/70) and Mn-doped Pb(Zr,Ti)O₃ (PMZT 30/70) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition technique. The experiments found that the addition of Mn in PZT thin films greatly improves the ferroelectric properties of thin films. It is demonstrated that the Mn-doped (1 mol%) PZT showed fatigue-free characteristics at least up to 10¹⁰ switching bipolar pulse cycles under 10 V and excellent retention properties. The Mn-doped PZT thin films also exhibited well-defined hysteresis loops with a remnant polarization (Pr) of 34 μC/cm² and a coercive field (Ec) of 100 kV/cm for the thickness of 300 nm. Dielectric constant and loss (tanδ) for Mn doped PZT thin films are 214 and 0.008, respectively. These figures compare well with or exceed the values reported previously. In this paper, the mechanism by which Mn influences on the ferroelectric properties of PZT thin films has also been discussed.     

Microwave dielectric and nonlinear optical studies on radio‐frequency sputtered Dy2O3‐doped KNN thin films

We report the effect of oxygen mixing percentage (OMP) on structural, microstructural, dielectric, linear, and nonlinear optical properties of Dy₂O₃‐doped (K_0.5Na_0.5)NbO₃ thin films. The (K_0.5Na_0.5)NbO₃ + 0.5 wt%Dy₂O₃ (KNN05D) ferroelectric thin films were deposited on to quartz and Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering. An increase in the refractive index from 2.08 to 2.21 and a decrease in the optical bandgap from 4.30 to 4.28 eV indicate the improvement in crystallinity, which is also confirmed from Raman studies. A high relative permittivity (ε_r=281‐332) and low loss tangent (tanδ=1.2%‐1.9%) were obtained for the films deposited in 100% OMP, measured at microwave frequencies (5‐15 GHz). The leakage current of the films found to be as low as 9.90×10^?9 A/cm² at 150 kV/cm and Poole‐Frenkel emission is the dominant conduction mechanism in the films. The third order nonlinear optical properties of the KNN05D films were investigated using modified single beam z‐scan method. The third order nonlinear susceptibility (?χ⁽³⁾?) values of KNN05D films increased from 0.69×10^?3 esu to 1.40×10^?3 esu with an increase in OMP. The larger and positive nonlinear refractive index n₂=7.04×10^?6 cm²/W, and nonlinear absorption coefficient β=1.70 cm/W were obtained for the 100% OMP film, indicating that KNN05D films are good candidates for the applications in nonlinear photonics and high‐frequency devices.     

Influence of Heat Treatment on the Optical Properties of Thermal Evaporated SnO<Subscript>2</Subscript> Thin Films

In this investigation, the optical properties of the thermally evaporated SnO₂ films and their dependence on the heat treatment were studied. The transmittance, T (λ), spectra were measured over the spectral range of 0.2 to 0.8 μm for SnO₂ films that were annealed at different temperatures (300, 350, 400, 450, 500, 550 and 600 K) in vacuum for 1h. All films showed high transparency in the visible range and increased with increasing the wavelength. These films have become more transparent after annealing at different temperatures. The optical constants of annealed SnO₂ films were obtained by modeling the measured transmission spectra. The best fit modeling of transmission spectra was obtained by applying Drude and OJL models combined with the effective medium approximation Bruggeman model. Increasing the annealing temperatures decreased both the refractive index and the extinction coefficient of the films. While the optical band gap energy increased from 3.05 to 4.11 eV by increasing the annealing temperature from 300 to 600 K, respectively. Analyzing the refractive index dispersion by using the Wemple-DiDomenico model revealed that the oscillator resonance energy E_o decreased whereas the oscillator dispersion energy E_d increased with increasing the annealing temperature.