Heteroepitaxial growth of Cu2O films on Nb-SrTiO3 substrates and their photovoltaic properties

In this paper, p-type Cu₂O thin films have been epitaxially grown on n-type semiconducting (001) oriented Nb-SrTiO₃ (NSTO) substrates with different Nb doping concentration by pulsed laser deposition technique. X-ray diffraction and high resolution transmission electron microscopy reveal a cube-on-cube epitaxial relationship between Cu₂O and NSTO. It is found that the deposition temperature, the thickness of Cu₂O films and the Nb doping concentration of NSTO substrates have critical impact on the photovoltaic (PV) properties of the Cu₂O/NSTO heterojunction devices. A maximum PV performance is observed in ITO/Cu₂O/NSTO device when the deposition temperature, film thickness and Nb doping concentration of NSTO are 550 °C, 76 nm, and 0.7 wt% NSTO, respectively. The optimized PV output corresponds to the open circuit voltage, short-circuit current density, fill factor and photovoltaic conversion efficiency about 0.45 V, 1.1 mA/cm², 46% and 0.23%,respectively. This work offers an insight into the strategy for developing and designing novel optoelectronics of NSTO-based oxide heterostructures.     

Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology,Crystallinity, and Optical Properties

A seed layer-assisted chemical bath deposition method performed at low temperature has been developed to grow uniform and high-quality crystal cuprous oxide (Cu₂O) nanoparticles on transparent conductive/glass substrates. The annealing process by continuous beam (CW) of CO₂ laser was used prior to growing the Cu₂O nanoparticles. In this study, the controlled synthesis of Cu₂O films was investigated by controlling the growth temperatures at 55 °C, 60 °C, 65 °C, and 70 °C, respectively. The modified seeding substrate reflect enhanced structural properties with laser annealing temperature of 450 ℃. In addition, Cu₂O nanoparticles with flower-like stricter show a greater density containing a smaller particle with 75 nm average dimension and flower particle size was about 85 nm. Results suggest an effective synthesis route for developing high-quality Cu₂O nanoparticles for optical and electronic applications.

     

Structural,optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

This study systematically investigated the structural, optical, and morphological evolution of Gallium oxide (Ga₂O₃) films deposited at different substrate temperatures on Al₂O₃(0001) using pulsed laser deposition (PLD). The thickness of the Ga₂O₃ films was standardized in order to eliminate its effect on the film properties. The effect of substrate temperature from room temperature to 600 °C on the film's transmittance, crystalline structure, chemical composition and surface morphology, was explored. The plasma species generated during the deposition of the PLD process were monitored and analyzed employing in situ optical emission spectroscopy. The deposition rate of the films decreased with increasing substrate temperature. X-ray photoelectron spectroscopy was used to detect both Ga³⁺ and Ga ⁺ oxidation states in all prepared films, which indicated substoichiometric Ga₂O₃ films deficient in oxygen. The percentage of non-lattice oxygen decreased with increasing substrate temperature. At optimal condition, mono-crystaline β-Ga₂O₃ was produced with a high visible and near-infrared transmittance, large grain size and smooth surface, which is suitable for the application in high-performance power electric devices and photoelectronic devices.     

Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition

The variation of the chemical composition and properties of PZT films as a function of oxygen pressure and laser fluence during pulsed laser deposition is used to tune the electrical properties of the PZT thin films. It is found that the deposition using a 248 nm laser fluence of 1.7 J/cm² and an oxygen pressure of 400 mtorr results the PZT films very similar to that of target material. Changing the laser fluences or oxygen pressure, affects the lead content of the deposited film. In the range of oxygen pressure 50–200 mtorr, the Zr/Zr+Ti and Ti/Zr+Ti ratio varies with oxygen pressure while the Pb/Zr+Ti ratio is almost uniform. Using oxygen pressure as a control parameter to tune the chemical compound and electrical properties of the deposited PZT films, the remnant polarization of the PZT films is tuned in the range of 6.6–42.2 µC/cm², the dielectric constant is controlled in the range of 29–130, and the piezoelectric constant d₃₃ is controlled in the range of 3.82–4.96 pm/V for a 40 nm thick PZT film.     

Studies on nanotribological and oxidation resistance properties of yttria stabilized zirconia (YSZ), alumina (Al2O3) based thin films developed by pulsed laser deposition

The present study aims at a detailed evaluation of mechanical, tribological, and high temperature oxidation resistance (at 1000 °C under isothermal condition) properties of YSZ, and Al₂O₃ based thin films developed by pulsed laser deposition technique. The mechanical and tribological properties of YSZ and Al₂O₃ thin films showed significant improvement with increasing the deposition temperature during pulsed laser deposition process. The kinetics of oxidation was reduced due to pulsed laser deposition and Al₂O₃ coating offered a superior oxidation resistance property as compared to YSZ coating. However, the deposition temperature has no significant effect in reducing the TGO growth rate of the pulsed laser deposited thin films.     

Effect of Al doped ZnO on optical and photovoltaic properties of the p-Cu2O/n-AZO solar cells

Metal oxide thin films have fared so well in the semiconductor industry because of their superior physical, electrical, and optical properties. The applications of these materials in solar cells, biosensors, biomedicine, supercapacitors, photocatalysis, luminous materials, and laser systems are becoming increasingly popular. In this study, the influence of Al concentration on Cu₂O/AZO heterojunction thin films was examined systematically. First, arrays of n-ZnO and AZO rods were produced on an ITO substrate using a hydrothermal technique at 140 °C. Then, using an alkaline cupric lactate solution, a thin films of p-Cu₂O were electrodeposited at 60 °C onto the ZnO arrays. The structure and morphology of the produced materials and the solar cells were studied using X-ray diffraction and scanning electron microscopy. The optical measurements demonstrate a shift in the absorption edge with increasing Al content. Solar cells have been created with a device structure of ITO/ZnO/Cu₂O/Al and ITO/Al-doped ZnO/Cu₂O/Al configurations. The power conversion efficiency (?) of the inorganic solar cell with 6% Al-doped ZnO is ? = 0.282%, which is greater than the ? of the ZnO-based solar cell (? = 0.17%).     

Low threshold voltage,highly stable electroforming-free threshold switching characteristics in VOx films-based device

Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.     

Electrochemical performance of LiFePO4 thin films with different morphology and crystallinity

LiFePO₄ thin films have been prepared by pulsed laser deposition method on titanium substrates. The influence of the deposition parameters, e.g. substrate temperature, ambient argon pressure, and post-annealing on the crystallinity and morphology of as-deposited thin films are investigated. Well-crystallized pure olivine-phase is obtained under optimized deposition condition (20–30 Pa, 500 °C). It shows a high electrochemical activity (83% theoretical capacity) at low current density (0.33 μA cm⁻², 1/20 C) and elevated testing temperature (45 °C). Moderate post-annealing treatment can enhance the utilization of the films further. The deposition of the film at a too high temperature or post-annealing for too long time could introduce Fe³⁺ impurities, i.e., Li₃Fe₂(PO₄)₃ and Fe₄(P₂O₇)₃, which can be easily detected by extending the electrochemical test voltage down to 2.5 V.     

Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films

Aluminum oxide (Al₂O₃) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10^?3 mbar in the substrate temperatures range 300–973 K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible spectroscopy and nanoindentation. The X-ray diffraction studies showed that the films deposited at low substrate temperatures (300–673 K) were amorphous Al₂O₃, whereas those deposited at higher temperatures (≥773 K) were polycrystalline cubic γ-Al₂O₃. The transmission electron microscopy studies of the film prepared at 673 K, showed diffuse ring pattern indicating the amorphous nature of Al₂O₃. The surface morphology of the films was examined by atomic force microscopy showing dense and uniform nanostructures with increased surface roughness from 0.3 to 2.3 nm with increasing substrate temperature. The optical studies were carried out by ellipsometry in the energy range 1.5–5.5 eV and revealed that the refractive index increased from 1.69 to 1.75 (λ=632.8 nm) with increasing substrate temperature. The UV–visible spectroscopy analysis indicated higher transmittance (>80%) for all the films. Nanoindentation studies revealed the hardness values of 20.8 and 24.7 GPa for the films prepared at 300 K and 973 K respectively.     

Influence of deposition parameters on the structure and microstructure of Bi12TiO20 films obtained by pulsed laser deposition

The structure, morphology and surface roughness of Bi₁₂TiO₂₀ (BTO) thin films grown on R-sapphire by pulsed laser deposition (PLD) were studied at different substrate temperatures, target-substrate distances, oxygen pressures and laser-pulse repetition rates. Although the substrate temperature seems to be the most important experimental parameter, the gas pressure and the target–substrate distance played important role on the phase formed and film thickness, with a significant effect of the laser-pulse repetition rate on the films thickness and preferred orientation of the deposited film. Single-phase γ-Bi₁₂TiO₂₀ was obtained on substrates at 650?°C, while several BTO metastable phases were observed in films deposited on substrates at temperatures between 500 and 600?°C. By the first time, thin films of pure and textured δ-Bi₁₂TiO₂₀ were successfully growth on substrates at 450?°C. When annealed, all the films deposited at lower temperatures resulted in the thermodynamically stable γ-Bi₁₂TiO₂₀.     

Phase development and crystallization of CuAlO2 thin films prepared by pulsed laser deposition

A polycrystalline CuAlO₂ single-phase target was fabricated by the conventional solid-state reaction route using Cu₂O and Al₂O₃. Thin films of CuAlO₂ were deposited by a pulsed laser deposition process on sapphire substrates at different temperatures. Then, post-annealing was followed at different conditions, and the phase development process of the films was examined. As grown thin films in the temperature range of 450–650 °C were amorphous. The c-axis oriented single phase of CuAlO₂ thin films were obtained when the films were post-annealed at 1100 °C in air after growing at 650 °C. Phi-scan of the film clearly showed 12 peaks, each of which are positioned at intervals of 30°. This is thought to be caused by the rhombohedral structured CuAlO₂ thin film growing in the states of 30° tilt during the annealing process. Hall effect analysis of the film was carried out.     

Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications

Potentiostatic deposition of Cu₂O thin films on glass substrates coated with F-doped SnO₂ from an alkaline electrolyte solution (pH 12.5) containing copper (II) sulfate and lactic acid was studied for fabrication of a Cu₂O/Al-doped ZnO (AZO) heterojunction solar cell. The band gap of the electrodeposited Cu₂O films was determined by photoelectrochemical measurements to be around 1.9 eV irrespective of the applied potentials. The solar cells with a glass/FTO/Cu₂O/AZO structure were fabricated by sputtering an AZO film onto the Cu₂O film followed by deposition of an Al contact by vacuum evaporation. The highest efficiency of 0.603% was obtained with a Cu₂O film deposited at −0.6 V (vs. Ag/AgCl). This was attributed to better compactness and purity of the Cu₂O film than those of the Cu₂O films deposited at other potentials.     

Pulsed and potentiostatic electrodeposition of CuInSe2 on gold-coated alumina substrates

CuInSe₂ thin films were deposited on gold-coated alumina electrodes using constant and pulsed potential signals. In situ electrochemical measurements were recorded with an atomic force microscope to follow CuInSe₂ electrodeposition. The electrodeposited films were characterized employing scanning electron microscopy, energy dispersive spectroscopy, grazing incidence X-ray diffraction, and Raman spectroscopy. The best stoichiometry is attained for films deposited at pulsed potentials of ?0.7 V. These films are also the most compact, showing a homogeneous morphology. In contrast, potentiostatic films presented minor variations in their chemical composition with the deposition potential. The morphology presented porous coral-like structures. X-ray and Raman spectroscopy analysis of as-deposited films by either technique reveal the presence of secondary phases such as Cu _x Se and Se, especially at the most positive deposition potentials. After a thermal treatment at 500 °C in Se vapor, the crystallinity of the material is significantly enhanced and no secondary phases are present.     

Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices

In this paper we show resistive switching characteristics of ZnFe₂O₄ thin films grown by pulsed laser deposition at various oxygen partial pressures. We discuss how the microstructure, surface roughness, oxidation condition, and resistive switching properties of ZnFe₂O₄ thin films are influenced by the oxygen partial pressure prevalent in the chamber during the deposition process. The films were deposited at oxygen partial pressure (pO₂) of 0.0013, 0.013, 0.13 and 1.3 mbar. The ZnFe₂O₄ thin film deposited at the lowest pO₂ (0.0013 mbar) did not display a resistive switching characteristic. The ZnFe₂O₄ device deposited at 0.13 mbar yielded the best results. These devices have a low SET variance and a large memory window (more than 2 orders of magnitude) due to an optimum amount of oxygen vacancies/ions contained in the ZnFe₂O₄ film, which is helpful for better resistive switching, than devices deposited at other oxygen pressures. We also find that the migration of oxygen vacancies is linked to the resistive switching process.     

Preparing pure C-axis oriented SrTiO3 film on CeO2 film by introducing a nano-Y0.5Gd0.5Ba2Cu3O7-δ layer

SrTiO₃ films were deposited using pulsed laser deposition (PLD) at substrate temperatures ranging from 300 °C to 700 °C on a CeO₂ layer and nano-Y_0.5Gd_0.5Ba₂Cu₃O_7-δ buffered CeO₂ layer, respectively. The effect of the substrate temperature and substrate film on the crystallinity, preferred orientation, and surface topography were investigated. On the CeO₂ layer, there were two preferred SrTiO₃ orientations, (00l) and (110). By introducing a nano-Y_0.5Gd_0.5Ba₂Cu₃O_7-δ layer, pure c-axis oriented SrTiO₃ films were obtained at each substrate temperature. Based on the lattice mismatch, three kinds of growth modes of SrTiO₃ grains were proposed that were proved by scanning electron microscopy (SEM).     

Influence of oxygen pressure on microstructure and dielectric properties of lead-free BaTi0.85Sn0.15O3 thin films prepared by pulsed laser deposition

Lead-free barium tin titanate BaTi_0.85Sn_0.15O₃ (BTS) ferroelectric thin films have been deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. The structure and dielectric properties of thin films deposited at various oxygen pressures are investigated systematically. By optimizing the oxygen pressure during the deposition, the structure and dielectric properties are improved. The thin films grown at 15 Pa have the best crystal quality and the largest grain size, which result in the enhancement of the dielectric properties. The dielectric constant and loss tangent show the similar trend in the entire oxygen pressure range. The influence mechanisms of the oxygen pressure on the structure and dielectric properties are proposed. The BTS thin films deposited at 15 Pa with large figure of merit (FOM) of 81.1, high tunability of 72.1%, moderate dielectric constant of 341, low loss tangent of 0.009 are considered to be appropriate as a field tunable ferroelectric material for electrically tunable devices.     

Pulsed laser deposition of hard and superhard carbon thin films from C60 targets

In the present study, carbon films were deposited by a pulsed laser deposition method. A C₆₀ fullerene target has been irradiated by a frequency doubled Nd:YAG laser with a pulse duration of 7 ns. The carbon films grown on Si(111) substrates at different substrate deposition temperatures (30, 300 and 500 °C) were characterized by Raman, X-ray Photoelectron and X-ray Auger Electron Spectroscopies, Energy Dispersive X-Ray Diffraction, Scanning Electron and Atomic Force Microscopies, and Vickers microhardness technique. The composition, structure, morphology and mechanical properties of films were found to be strongly dependent on the substrate temperature. At 30 °C and 300 °C deposition temperature, superhard and hard diamond-like films have been obtained, respectively. In the case of 500 °C deposition, a hard film, composed of crystalline C₆₀ and diamond-like carbon, has been prepared.     

Very hard ZrC thin films grown by pulsed laser deposition

Thin ZrC films were grown on (1 0 0) Si substrates at temperatures from 30 to 500 °C by the pulsed laser deposition technique. Auger electron spectroscopy investigations found that films contained oxygen concentration below 2.0 at%, while X-ray photoelectron spectroscopy investigations showed that oxygen is bonded in an oxy-carbide type of compound. The films’ mass densities, estimated from X-ray reflectivity curve simulations, and crystallinity improved with the increase of the substrate temperature. Williamson–Hall plots and residual-stress measurements using the modified sin² ψ method for grazing incidence X-ray diffraction showed that the deposited films are nanostructured, with crystallite sizes from 6 to 20 nm, under high micro-stress and compressive residual stress. Nanoindentation investigations found hardness values above 40 GPa for the ZrC films deposited at substrate temperatures higher than 300 °C. The high density of the deposited films and the nm-size crystallites are the key factors for achieving such high hardness values.     

Structure and conducting properties of La1-xSrxCoO3-δ films

La_1-xSr_xCoO_3-δ (LSCO) films have been deposited on LaAlO₃ (LAO), La_1-xSr_xGa_1-yMg_yO_3-δ/LaAlO₃ (LSGM/LAO) and yittria-stabilized zirconia (YSZ) substrates by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell cathodes. The optimum conditions for deposition were determined for the different substrates in an ambient of 80–310 mTorr oxygen pressure and at a substrate temperature range of 450 to 750°C. The films structures were analyzed by XRD, RBS and SEM. Epitaxial LSCO films were grown with (110) preferred orientation on YSZ, and with (100) orientation on LAO and LSGM/LAO. The electrical resistivity of the epitaxial LSCO films ranged from 10⁻² to 10⁻⁴ Ω cm, depending on the deposition temperature and substrate. The ionic conducting behavior of the LSCO film on YSZ was investigated by impedance measurement.     

Absorption boost of TiO2 nanotubes by doping with N and sensitization with CdS quantum dots

A process of obtaining N-doped TiO₂ nanotubes sensitized by CdS nanoparticles is presented, including detailed characterizations performed along the synthesis. Transparent TiO₂ films consisting of nanotubes, 2.5 µm long and of ~60 nm inner diameter, were obtained after anodization of a titanium film deposited onto FTO glass substrate. N-doping was achieved by annealing of TiO₂ film in ammonia. X-ray Photoelectron Spectroscopy measurements showed that nitrogen was substitutionally incorporated in the TiO₂ matrix, with the N:Ti concentration ratio of 1:100. The doping changed the optical properties of the material in such a way that the absorption edge was shifted from 380 nm to 507 nm, as observed from diffuse reflectance spectra. The influence of the microwave (MW) irradiation on the synthesized CdS quantum dots and their optical properties was investigated. It was shown that the diameter of CdS nanoparticles was increased due to releasing of S^2- ions from dimethyl sulfoxide (DMSO) as a consequence of the MW treatment. The (N)TiO₂ films were then used as substrates for matrix assisted pulsed laser deposition of the CdS quantum dots with DMSO as a matrix. The laser parameters for the deposition were optimized in order to preserve the nanotubular structure open, the latter being an important feature of this type of photoanode. The structure obtained under optimized conditions has an additional absorption edge shift, reaching 603 nm.