Dielectric Properties of the "Twinned" 8H-Hexagonal Perovskite Ba8Nb4Ti3O24

The dielectric properties of dense ceramics of the "twinned" 8H-hexagonal perovskite Ba₈Nb₄Ti₃O₂₄ are reported. Single-phase powders were obtained from the mixed-oxide route at 1325°C and ceramics (>92% of the theoretical X-ray density) by sintering in air or flowing O₂ at 1400°–1450°C. The ceramics are dc insulators with a band gap >3.4 eV that resonate at microwave frequencies with relative permittivity, ɛ_r∼44–48, quality factor, Q × f _r∼21 000–23 500 GHz (at f _r∼5.5 GHz) and temperature coefficient of resonant frequency, TC _f,∼+115 ppm/K.     

Sr3LaNb3O12: A New Low Loss and Temperature Stable A4B3O12-Type Microwave Dielectric Ceramic

The microwave dielectric properties of dense ceramics of a new A₄B₃O₁₂ type cation-deficient hexagonal perovskite Sr₃LaNb₃O₁₂ are reported. Single-phase powders can be obtained from the mixed-oxide route at 1320°C and dense ceramics (>96% of the theoretical X-ray density) with uniform microstructures (5–12 um) can be obtained by sintering in air at 1430°C. The ceramic exhibits a moderate dielectric constant ɛ_r∼36, a high quality factor Q × f ∼45 327 GHz, and a low temperature coefficient of resonant frequency τ _f of −9 ppm/°C.     

Crystal Structure and Dielectric Properties of LaYbO3

The crystal structure and dielectric properties of LaYbO₃ ceramics prepared by the mixed-oxide route have been investigated. Rietveld refinements performed on X-ray and neutron diffraction data show the room-temperature structure to be best described by the orthorhombic Pnma space group [ a =6.02628(9) Å, b =8.39857(11) Å, and c =5.82717(7) Å; Z =4, and theoretical density, D _x =8.1 g/cm³] in agreement with electron diffraction experiments. LaYbO₃ ceramics fired at 1600°C for 4 h attain ∼97% of D _x and their microstructures consist of randomly distributed equiaxed grains with an average size of ∼8 μm. Conventional transmission electron microscopy shows densification to occur in the absence of a liquid phase and reveals domain-free grains. The relative permittivity, ɛ_r, of LaYbO₃ ceramics at radio frequencies is ∼26 in the range ∼10–300 K; however, a small dielectric anomaly is detected at ∼15 K. At room temperature and microwave frequencies, LaYbO₃ ceramics exhibit ɛ_r∼26, Q × f _r∼20 613 GHz (at 7 GHz), and τ_f∼−22 ppm/K. Q × f _r show complex subambient behavior, decreasing from a plateau value of ∼20 000 GHz between ∼300 and 200 K to a second plateau value of ∼6000 GHz at ∼90 K before decreasing to <1000 GHz at ∼10 K. The large decrease in Q × f _r at low temperature may be related to the onset of antiferromagnetism at ∼2.7 K. ¹     

A New Low-Loss Microwave Dielectric Ceramic Sr4LaTiNb3O15

A high dielectric constant and low-loss ceramic with composition Sr₄LaTiNb₃O₁₅ has been prepared by the conventional solid-state ceramic route. This compound adopts an A₅B₄O₁₅ cation-deficient hexagonal perovskite structure and crystallizes in the trigonal system with unit cell parameters a =5.6307(2), c =11.3692(3) Å, V =312.16(2) ų, and Z =1. The dielectric properties of dense ceramics sintered in air at 1460°C have been characterized at microwave frequencies. The results show that the material affords a relatively high dielectric constant ɛ_r∼43, a high quality factor Q × f ∼44 718 GHz, and a low temperature coefficient of resonant frequency TC_f∼13 ppm/°C.     

Reduced Dielectric Loss of Modified ZnNb2O6 Ceramics by Substituting Nb5+ with Ta5+

The effects of substituting Nb⁵⁺ with Ta⁵⁺ on the microwave dielectric properties of the ZnNb₂O₆ ceramics were investigated in this study. The forming of Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛ_r∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛ_r∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τ_f∼–71.1 ppm/°C) was achieved for Zn(Nb_0.95Ta_0.05)₂O₆ solid solution sintered at 1175°C for 2 h.     

Effects of Silver Doping on the Sol–Gel-Derived Ba4(Nd0.7Sm0.3)9.33Ti18O54 Microwave Dielectric Ceramics

Tungstenbronze-type Ba₄(Nd_0.7Sm_0.3)_9.33Ti₁₈O₅₄ (BNST) microwave dielectric ceramics doped with 0–10 wt% silver (Ag) particles were successfully fabricated by a citrate sol–gel method. The influence of Ag doping on the sinterability, microstructure, bulk conductivity, and dielectric properties of BNST was investigated. The desired tungstenbronze-type phase was obtained at 900°–950°C. The sintering temperature of BNST decreased to 1100°C with the aid of a small amount of Ag addition (1 wt%). No chemical reaction between the tungsenbronze phase and Ag was detected. The particle size of the powders decreased with increasing Ag content up to 1 wt% and it then increased with a further increase in the Ag content. The dense fine-grained ceramics with submicrometer grains (∼300 nm) were obtained with 1 wt% Ag addition. The submicrometer-grained ceramics had excellent dielectric properties of ɛ_r∼81 and Q × f ∼11 000 GHz. Both the dielectric constant and dielectric loss significantly increased with large additions (>3 wt%) of Ag due to the percolation effect.     

Microstructure and Electrical Properties of [(K0.50Na0.50)0.95−xLi0.05Agx](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K_0.50Na_0.50)_{0.95− x} Li_0.05Ag _x ](Nb_0.95Ta_0.05)O₃ (KNLNANT- x ) lead-free piezoelectric ceramics were prepared by normal sintering. Effects of the Ag content on the microstructure and electrical properties of KNLNANT- x ceramics were systematically investigated. It is found that the ceramics with x =0.03 exhibit relatively good electrical properties along with high Curie temperature: ( d ₃₃∼252 pC/N, T _c∼438°C, k _p∼45.4%, P _r∼30.1 μC/cm², E _c∼13.8 kV/cm, ɛ_r∼1030, and tan δ∼2.6%). The related mechanism for enhanced electrical properties of the ceramics was also discussed. These results show that KNLNANT-0.03 ceramic is a promising candidate material for high temperature lead-free piezoelectric ceramics.     

Dielectric Properties of (1−x)CaTiO3–xCa(Zn1/3Nb2/3)O3 Ceramic System at Microwave Frequency

The microwave dielectric properties of the (1− x )CaTiO₃– x Ca(Zn_1/3Nb_2/3)O₃ ceramic system have been investigated. The ceramic samples sintered at 1300°–1450°C for 4 h in air exhibit orthorhombic pervoskite and form a complete solid solution for different x value. When the x value increased from 0.2 to 0.8, the permittivity ɛ_r decreased from 115 to 42, the unloaded quality factor Q × f increased from 5030 to 13 030 GHz, and the temperature coefficient τ_f decreased from 336 to −28 ppm/°C. When x =0.7, the best combination of dielectric properties, a near zero temperature coefficient of resonant frequency of τ_f∼−6 ppm/°C, Q × f ∼10 860 GHz and ɛ_r∼51 is obtained.     

K/Na Ratio Dependence of the Electrical Properties of [(KxNa1−x)0.95Li0.05](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K _x Na_{1− x} )_0.95Li_0.05](Nb_0.95Ta_0.05)O₃ (K _x NLNT) ( x= 0.40–0.60) lead-free piezoelectric ceramics were prepared by conventional solid-state sintering. The effects of K/Na ratio on the dielectric, piezoelectric, and ferroelectric properties of the K _x NLNT ceramics were studied. The experimental results show that the electrical properties strongly depend on the K/Na ratio in the K _x NLNT ceramics. The K _x NLNT ( x =0.42) ceramics exhibit enhanced properties ( d ₃₃∼242 pC/N, k _p∼45.7%, k _t∼47%, T _c∼432°C, T _o−t =48°C, ɛ_r∼1040, tanδ∼2.0%, P _r∼26.4 μC/cm², E _c∼10.3 kV/cm). Enhanced electrical properties of the K _x NLNT ( x =0.42) ceramics could be attributed to the polymorphic phase transition near room temperature. These results show that the K _x NLNT ( x =0.42) ceramic is a promising lead-free piezoelectric material.     

Low-Loss Microwave Dielectrics Using Mg2(Ti1−xSnx)O4 (x=0.01–0.09) Solid Solution

Low-loss ceramics having the chemical formula Mg₂(Ti_{1− x} Sn _x )O₄ for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τ_f∼−45.1 ppm/°C) was achieved for Mg₂(Ti_0.95Sn_0.05)O₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti_0.95Sn_0.05)O₃ (ɛ_r∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τ_f∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛ_r and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications.     

Phase Structure and Electrical Properties of (K0.48Na0.52)(Nb0.95Ta0.05)O3-LiSbO3 Lead-Free Piezoelectric Ceramics

(1− x )(K_0.48Na_0.52)(Nb_0.95Ta_0.05)O₃– x LiSbO₃ [(1− x )KNNT− x LS] lead-free piezoelectric ceramics were prepared by the conventional solid-state sintering method. A morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was identified in the composition range of 0.03< x <0.05. The ceramics near the MPB exhibit a strong compositional dependence and enhanced electrical properties. The (1− x )KNNT– x LS ( x =0.04) ceramics exhibit good electrical properties ( d ₃₃=250 pC/N, k _p=45.1%, k _t =46.3%, T _c=348°C, T _{o − t} =74°C, P _r=25.9 μC/cm², E _c=10.7 kV/cm, ɛ_r∼1352, tan δ∼3%). These results show that (1− x )KNNT– x LS ceramic is a promising lead-free piezoelectric material.     

Piezoelectric Properties of (1−x)(Na0.5K0.5)NbO3–xAgSbO3 Lead-Free Ceramics

(1− x )(Na_0.5K_0.5)NbO₃– x AgSbO₃ lead-free piezoelectric ceramics were prepared by normal sintering. The effects of the AgSbO₃ on the phase structure and piezoelectric properties of the ceramics were systematically studied. These results show that the AgSbO₃-modified (K_0.50Na_0.50)NbO₃ lead-free piezoelectric ceramics form stable solution with orthorhombic structure, and the Curie temperature and the polymorphic phase transition of the ceramics decreased with increasing AgSbO₃. The result shows that the piezoelectric properties of the ceramics strongly depend on the AgSbO₃. The ceramics with x =0.05 possess optimum properties ( d ₃₃=192 pC/N, k _p=43%, T _c=348°C, T _o−t =145°C, ɛ_r∼632, and tan δ∼3.5%). These results indicate that the ceramic is a promising candidate material for lead-free piezoelectric ceramics.     

Sintering Behavior and Dielectric Properties of Bi3NbO7 Ceramics Prepared by Mixed Oxides and High-Energy Ball-Milling Methods

The sintering behavior and dielectric properties of Bi₃NbO₇ ceramics prepared by the high-energy ball milling (HEM) method and conventional mixed oxides method with V₂O₅ addition were investigated. All the samples were sintered between 840° and 960°C. For the ceramics prepared by the mixed oxides method, the pure tetragonal Bi₃NbO₇ phase formed without any cubic phase. With changing sintering temperature, the dielectric constant ɛ_r lies between 79 and 92, while the Q × f values are between 300 and 640 GHz. The samples sintered at 870°C have the best microwave dielectric properties with ɛ_r=79, Q × f =640 GHz, and the temperature coefficients of resonant frequency τ_f between 0 and −20 ppm/°C. For the ceramics prepared by the HEM, a pure cubic phase was obtained. The ɛ_r changes between 78 and 80 and Q × f were between 200 and 290 GHz.     

Synthesis and Microwave Dielectric Properties of MgSiO3 Ceramics

MgSiO₃ ceramics were synthesized and their microwave dielectric properties were investigated. The Mg₂SiO₄ phase was formed at temperatures lower than 1200°C, while the orthorhombic MgSiO₃ phase started to form by the reaction of SiO₂ and Mg₂SiO₄ in the specimen fired at 1200°C. The structure of the MgSiO₃ ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400°C. A dense microstructure was developed for the specimens sintered at above 1350°C. The excellent microwave dielectric properties of ɛ_r=6.7, Q × f =121 200 GHz, and τ_f=−17 ppm/°C were obtained from the MgSiO₃ ceramics sintered at 1380°C for 13 h.     

High-Q Microwave Dielectrics in the (Mg1−xCox)2TiO4 Ceramics

The microwave dielectric properties and the microstructures of (Mg_{1− x} Co _x )₂TiO₄ ceramics prepared by the conventional solid-state route were investigated. Lattice parameters were also measured for specimens with different x . The formation of solid solution (Mg_{1− x} Co _x )₂TiO₄ ( x =0.02–0.1) was confirmed by the X-ray diffraction patterns, energy dispersive X-ray analysis, and the lattice parameters measured. By increasing x from 0 to 0.05, the Q × f of the specimen can be tremendously boosted from 150 000 GHz to a maximum of 286 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.7, Q × f ∼286 000 GHz at 10.4 GHz, τ_f∼−52.5 ppm/°C) was achieved for (Mg_0.95Co_0.05)₂TiO₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured (Mg_0.95Co_0.05)TiO₃ was detected as a second phase. The presence of the second phase would cause no significant variation in the dielectric properties of the specimen because it possesses compatible properties compared with that of the main phase. In addition, only a small deviation in the dielectric properties was monitored for specimens with x =0.04–0.05 at 1360°–1420°C. It not only provides a wide process window but also ensures an extremely reliable material proposed as a very promising dielectric for low-loss microwave and millimeter wave applications.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

High-Dielectric-Constant and Low-Loss Microwave Dielectric in the (1−x)Nd(Zn1/2Ti1/2)O3–xSrTiO3 System with a Zero Temperature Coefficient of Resonant Frequency

High-dielectric-constant and low-loss ceramics in the (1− x )Nd(Zn_1/2Ti_1/2)O₃– x SrTiO₃ system have been prepared by the conventional mixed-oxide route and their microwave dielectric properties have been investigated. A two-phase system was confirmed by the X-ray diffraction patterns, the energy-dispersive X-ray spectrometer analysis, and the measured lattice parameters. Addition of SrTiO₃, having a much smaller grain size in comparison with that of Nd(Zn_1/2Ti_1/2)O₃, could effectively hold back abnormal grain growth in the Nd(Zn_1/2Ti_1/2)O₃ matrix. Evaporation of Zn at high temperatures caused an increase in the dielectric loss of the system. The temperature coefficient of resonant frequency increases with increasing SrTiO₃ content and tunes through zero at x =0.52. Specimens with x =0.52 possessed an excellent combination of microwave dielectric properties: ɛ_r∼54.2, Q × f ∼84 000 GHz, and τ_f∼0 ppm/°C. It is proposed as a suitable candidate material for today's 3G passive components and small-sized GPS patch antennas.     

Microwave Dielectric Properties of Li2TiO3 Ceramics Doped with ZnO–B2O3 Frit

A type of new low sintering temperature ceramic, Li₂TiO₃ ceramic, has been found. Although it is difficult for the Li₂TiO₃ compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li₂O, dense Li₂TiO₃ ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B₂O₃ frit. The sintering behavior and microwave dielectric properties of Li₂TiO₃ ceramics with less ZnO–B₂O₃ frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B₂O₃ frit can lower the sintering temperature of the Li₂TiO₃ ceramics, but it does not apparently degrade the microwave dielectric properties of the Li₂TiO₃ ceramics. Typically, the good microwave dielectric properties of ɛ_r=23.06, Q × f =32 275 GHz, τ_f = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B₂O₃ frit-doped Li₂TiO₃ ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li₂TiO₃ ceramic system may be a promising candidate for low-temperature cofired ceramics applications.     

Synthesis and Microwave Dielectric Properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re₃Ga₅O₁₂ ceramics sintered at 1350°–1500°C had a high-quality factor ( Q × f ) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm₃Ga₅O₁₂ ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛ_r=12.4, Q × f =192 173 GHz, and τ_f=−19.2 ppm/°C.     

High-Temperature Structural Phase Transition in Ca0.7Ti0.7La0.3Al0.3O3: Investigation by Synchrotron X-Ray Diffraction

Mixed-oxide prepared Ca_0.7Ti_0.7La_0.3Al_0.3O₃ (CTLA) ceramics (≈96% dense), grain size 6–7 μm, with dielectric properties (at 4 GHz) of ɛ_r≈46, Q × f ≈38 000 GHz, and τ_f+13 ppm/°C, were studied at 25°–1300°C using synchrotron X-ray powder diffraction. At room temperature, CTLA exhibits a distorted orthorhombic structure, with two tilt systems: a =5.40383 (4) Å, b =5.41106 (6) Å, and c =7.64114 (7) Å with space group Pbnm . At 1050°±25°C, there is a transition from orthorhombic ( Pbnm ) to tetragonal ( I 4/ mcm ), with a simpler tilt arrangement. The lattice parameters at 1100°C were: a =5.44285 (4) Å and c =7.68913 (8) Å.