Oxidation of ZrB2–SiC: Influence of SiC Content on Solid and Liquid Oxide Phase Formation

The effect of SiC concentration on the liquid and solid oxide phases formed during oxidation of ZrB₂–SiC composites is investigated. Oxide-scale features called convection cells are formed from liquid and solid oxide reaction products upon oxidation of the ZrB₂–SiC composites. These convection cells form in the outermost borosilicate oxide film of the oxide scale formed on the ZrB₂–SiC during oxidation at high temperatures (≥1500°C). In this study, three ZrB₂–SiC composites with different amounts of SiC were tested at 1550°C for various durations of time to study the effect of the SiC concentration particularly on the formation of the convection cell features. A calculated ternary phase diagram of a ZrO₂–SiO₂–B₂O₃ (BSZ) system was used for interpretation of the results. The convection cells formed during oxidation were fewer and less uniformly distributed for composites with a higher SiC concentration. This is because the convection cells are formed from ZrO₂ precipitates from a BSZ oxide liquid that forms upon oxidation of the composite at 1550°C. Higher SiC-containing composites will have less dissolved ZrO₂ because they have less B₂O₃, which results in a smaller amount of precipitated ZrO₂ and consequently fewer convection cells.     

Tetragonal Zirconia Polycrystals Reinforced with SiC Whiskers

The microstructure and the mechanical properties of hot-pressed tetragonal ZrO₂ polycrystals (TZP) reinforced with up to 30 vol% SiC whiskers were studied. The SiC whisker-TZP composites were stable under the hot-pressing conditions at 1450°C. Annealing in an oxidizing atmosphere at ∼1000°C resulted in glass formation and microcracking caused by whisker oxidation and transformation of the ZrO₂ grains near the whiskers to monoclinic symmetry. The fracture toughness was markedly improved by the dispersed whiskers (∼12 Mpa·m^1/2 at 30 vol% SiC) compared to the values measured for the matrix (∼6 Mpa·m^1/2). The flexural strength of the hot-pressed TZP-30 vol% SiC whisker composite at 1000°C (∼400 MPa) was twice that of the TZP matrix.     

Microscopic Mechanisms of Oxidation in SiC-Whisker-Reinforced Mullite/ZrO2 Matrix Composites

The oxidation of SiC whiskers, contained in alkoxide-derived mullite-based matrices and exposed in air at 1000–1350°C for up to 1000 h, has been studied by analytical TEM, high-resolution SEM, and XRD. Silicon carbide whiskers were effectively protected from oxidation when embedded in a pure mullite matrix, but oxidized considerably when embedded in mullite/ZrO₂ matrices. The oxidation mechanisms varied with matrix composition and exposure temperature. At 1350°C the amorphous layer first crystallized as cristobalite, then gradually incorporated alumina. At later times, the mullite portion of the mullite/ZrO₂ matrix dissolved extensively into the layer. Also, the zirconia particles reacted with silica to form zircon. At 1200°C less extensive interdiffusion and chemical reaction occurred, and the silica layer devitrified into cristobalite and quartz. At 1000°C no interdiffusion or chemical reaction was seen, and the silica layer tended to devitrify into quartz. The thickness of the oxide layer around a SiC whisker in a particular matrix depended on the morphology and composition of grains abutting it or adjacent to it.     

Liquid–Solid Equilibria in the System NiO–TiO2–SiO2 in the Temperature Range 1430° to 1660°C

Equilibrium relations in the system NiO–TiO₂–SiO₂ in air have been investigated in the temperature range 1430° to 1660°C. The most conspicuous feature of the phase relations is the existence of a cation-excess spinel-type phase, in addition to NiO and NiTiO₃, on the liquidus surface and at subsolidus temperatures down to 1430°C. Three invariant points have been located on the liquidus. There is a peritectic at 1540°C characterized by coexisting NiO ( ss ), spinel( ss ), cristobalite, and liquid of composition 47 wt% NiO, 29 wt% TiO₂, and 24 wt% SiO₂. Two eutectics are present, one at 1480°C, with spinel( ss ), NiTiO₃, cristobalite, and liquid (42 wt% NiO, 43 wt% TiO₂, and 15 wt% SiO₂), as the coexisting phases. The other is at 1490°C with NiTiO₃, rutile, cristobalite, and liquid (32 wt% NiO, 56 wt% TiO₂, and 12 wt% SiO₂). A liquid miscibility gap extends across the diagram from the two bounding binary systems NiO–SiO₂ and TiO₂–SiO₂.     

Effects of High Water-Vapor Pressure on Oxidation of Silicon Carbide at 1200°C

The oxidation of SiC at 1200°C in a slowly flowing gas mixture of either air or air + 15 vol% H₂O at 10 atm (1 MPa) was studied for extended times to examine the effects of elevated water-vapor pressure on oxidation rates and microstructural development. At a water-vapor pressure of 1.5 atm (150 kPa), distinct SiO₂ scale structures were observed on the SiC; thick, porous, nonprotective cristobalite scales formed above a thin, nearly dense vitreous SiO₂ layer, which remained constant in thickness with time as the crystalline SiO₂ continued to grow. The pore morphology of the cristobalite layer differed depending on the type of SiC on which it was grown. The crystallization and growth rates of the cristobalite layer were significantly accelerated in the presence of the high water-vapor pressure and resulted in rapid rates of SiC surface recession that were on the order of what is observed when SiO₂ volatility is rate controlling at high gas-flow velocities (30 m/s). The recession process can be described by a paralinear kinetic model controlled by the conversion of dense vitreous SiO₂ to porous, nonprotective SiO₂.     

ZrO2-Transformation-Toughened Glass-Ceramics Prepared by the Sol-Gel Process from Metal Alkoxides

Glasses of composition 3ZrO₂O · 2SiO₂ were prepared by the sol-gel process from metal alkoxides. Tetragonal ZrO₂ was precipitated by appropriate heat treatment at 1000° to 1200°C. The fracture toughness of these glass-ceramics increased with increasing crystallite size of the tetragonal ZrO₂, reaching ∼5.0 MN/m^3/2 at a size of ∼40 nm. The higher fracture toughness was attributed to tetragonal → monoclinic ZrO₂ transformation toughening.     

Al2O3–ZrO2–SiO2 Ternary Glasses for Molybdenum Oxidation Barriers

The wettability of binary and ternary glasses belonging to SiO₂–Al₂O₃–ZrO₂ diagram has been studied using the sessile drop technique at 1750° and 1800°C. The ternary SiO₂–Al₂O₃–ZrO₂ (90–5–5 wt%) glass has proved to be well appropriated as a molybdenum oxidation barrier coating. The addition of 5 wt% of MoO₂ slightly improves its wettablity at higher temperatures without affecting its oxidation barrier properties. The Mo comes into the glass network as a mixture of Mo⁵⁺, Mo⁴⁺, and Mo⁶⁺. After oxidation at 1000°C in oxygen atmosphere, the molybdenum remains in the glass network as Mo⁶⁺.     

Effects of Annealing Temperature on Microstructural Development at the Interface Between Zirconia and Titanium

The interfacial reaction layers in the Ti/ZrO₂ diffusion couples, isothermally annealed in argon at temperatures ranging from 1100° to 1550°C for 6 h, were characterized using scanning electron microscopy and transmission electron microscopy, both attached with an energy-dispersive spectrometer. Very limited reaction occurred between Ti and ZrO₂ at 1100°C. A β'-Ti(Zr, O) layer and a two-phase α-Ti(O)+β'-Ti(Zr, O) layer were found in the titanium side after annealing at T ≥1300°C and T ≥1400°C, respectively. A three-phase layer, consisting of Ti₂ZrO+α-Ti(O, Zr)+β'-Ti (O, Zr), was formed after annealing at 1550°C. In the zirconia side near the original interface, β'-Ti coexisted with fine spherical c- ZrO_{2− x} , which dissolved a significant amount of Y₂O₃ in solid solution at T ≥1300°C. Further into the ceramic side, the α-Zr was formed due to the exsolution of Zr out of the metastable ZrO_{2− x} after annealing at T ≥1300°C: the α-Zr was very fine and dense at 1300°C, continuously distributed along grain boundaries at 1400°C, and became coarsened at 1550°C. Zirconia grains grew significantly at T ≥1400°C, with the lenticular t -ZrO_{2− x} being precipitated in c -ZrO_{2− x} . Finally, the microstructural development and diffusion paths in the Ti/ZrO₂ diffusion couples annealed at various temperatures were also described with the aid of the Ti–Zr–O ternary phase diagram.     

Paralinear Oxidation of CVD SiC in Simulated Fuel-Rich Combustion

The oxidation kinetics of CVD SiC were measured by thermogravimetric analysis (TGA) in a 4H₂·12H₂O·10CO·7CO₂·67N₂ gas mixture flowing at 0.44 cm/s at temperatures between 1300° and 1450°C in fused quartz furnace tubes at 1 atm total pressure. The SiC was oxidized to form solid SiO₂. At ≥1350°C, the SiO₂ was in turn volatilized. Volatilization kinetics were consistent with the thermodynamic predictions based on SiO formation. These two simultaneous reactions resulted in overall paralinear kinetics. A curve fitting technique was used to determine the linear and parabolic rate constants from the paralinear kinetic data. Volatilization of the protective SiO₂ scale resulted in accelerated consumption of SiC. Recession rates under conditions more representative of actual combustors were estimated from the furnace data.     

Effect of Alumina on Sintering Behavior and Electrical Conductivity of High-Purity Yttria-Stabilized Zirconia

The sintering behavior and electrical conductivity of high-purity 8-mol% Y₂O₃-stabilized ZrO₂ (8YSZ) with Al₂O₃ additions were investigated. The addition of 1 wt% AI₂O₃ to 8YSZ provided dense, sintered samples with 9.1% relative density at 1400°C without a holding time. Addition of 1 wt% SiO₂ enhanced the sinterability of 8YSZ. Na₂O addition of 0.1 wt% remarkably lowered it. Electrical conductivity at 1000°C in air increased slightly with increased Ai₂O₃ content up to 1 wt% and then monotonously decreased. 8YSZ with 1 wt% AI₂O₃ showed the maximum conductivity of 0.16 S/cm at 1000°C.     

The Pseudobinary Ti-ZrO2

The vertical section Ti-ZrO₂ within the Ti-Zr-O system was investigated by metallographic, X-ray diffraction, electron probe, and melting point studies. Analyses were conducted using arcmelted specimens which had been equilibrated and quenched from temperatures of 600° to 1600°C. The Ti-ZrO₂ section is similar to the Zr-ZrO₂ system. At high temperatures, considerable amounts of Zr and O go into solid solution in Ti, stabilizing α-Ti to 30 wt% ZrO₂. From 30 to 98 wt% ZrO₂ an α-Ti+ZrO₂ region is defined, and at compositions above 98 wt% ZrO₂, single-phase ZrO₂( ss ) exists. At low temperatures an α-Ti+(Ti,Zr)₃O field exists from 22 to 32 wt% ZrO₂; this region decreases in size with increasing temperature until it disappears at 1200°C. Above 32 wt% ZrO₂, a three phase α-Ti+ (Ti,Zr)₃O+ZrO₂ field exists; its stability extends from 1200°C at 30 wt%      

Sintering and Properties of β'-Sialon with a Nitrogen-Rich Y2O3 Sintering Aid

The synthesis of dense sintered sialon with external additives selected from the system Y₂O₃–AIN–SiO₂ is reported. The highest density (3.21 g/cm³) was achieved at 1750°C at 90 min of sintering with 5 wt% additive. The degree of sialon substitution increased with the amount of liquid; the YSiO₂N crystalline phase formed concurrently. Strength degradation occurred above 1000°C. The fracture toughness of the material sintered with a lower amount of sintering aid remained relatively unchanged to 1200°C. The material with more additive exhibited decreased toughness above 1000°C.     

Strength of Nicalon Silicon Carbide Fibers Exposed to High-Temperature Gaseous Environments

The effects of exposures to high-temperature gaseous atmospheres on the strength of Nicalon SiC fibers were investigated. The exposure conditions were as follows: (1) H₂ with various P _H2O for 10 h at 1000° and 1200°C, and (2) air for 2 to 100 h at 800° to 1400°C. Individual fibers were tested in tension following each exposure. The strengths of the fibers were strongly influenced by the exposure atmosphere and temperature, but less affected by time at temperature. When exposed in air, a SiO₂ layer was formed on the surface, minimizing the degradation of strength. However, this beneficial effect was negated under conditions in which the SiO₂ layer became too thick. The most severe degradation resulted from exposure to a reducing atmosphere, presumably due to the reduction of SiO₂ inherent in the fibers.     

Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure

Oxidized amorphous Si₃N₄ and SiO₂ powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si₂ON₂) was observed from amorphous silicon nitride (Si₃N₄) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si₂ON₂ coexisted with β-Si₃N₄ with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si₂ON₂. Pressing a mixture of amorphous Si₃N₄ of lower oxygen (1.5 wt%) and SiO₂ under 1.0–5.0 GPa between 1000° and 1350°C did not give Si₂ON₂ phase, but yielded a mixture of α,β-Si₃N₄, quartz, and coesite (a high-pressure form of SiO₂). The formation of Si₂ON₂ from oxidized amorphous Si₃N₄ seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure.     

A Study of the Phase Relations of ZrO2–TiO2 and ZrO2–TiO2–SiO2

The phase relations of the systems ZrO₂–TiO₂ and ZrO₂–TiO₂–SiO₂ were investigated. X-ray diffraction techniques served as the principal means of analysis. The binary system ZrO₂–TiO₂ was found to be one of partial solid solutions with no intermediate compounds. A eutectic point was found to exist at 50 to 55 weight % ZrO₂ and 1600°C. A preliminary investigation of the ternary system ZrO₂–TiO₂–SiO₂, although not extensive, resulted in a better understanding of this system, with a fairly accurate location of some of its boundary lines. A eutectic point was located at 2% ZrO₂, 10% TiO₂, and 88% SiO₂ at approximately 1500°C.     

Effect of Zirconia Content on the Oxidation Behavior of Silicon Carbide/Zirconia/Mullite Composites

The oxidation of hot-pressed SiC-particle (SiC_p)/zirconia (ZrO₂)/mullite composites with various ZrO₂ contents, exposed in air isothermally at 1000° and 1200°C for up to 500 h, was investigated; an emphasis was placed on the effects of the ZrO₂ content on the oxidation behavior. A clear critical volume fraction of ZrO₂ existed for exposures at either 1000° or 1200°C: the oxidation rate increased dramatically at ZrO₂ contents of >20 vol%. The sharp transition in the oxidation rate due to the variation of ZrO₂ content could be explained by the percolation theory, when applied to the oxygen diffusivity in a randomly distributed two-phase medium. Morphologically, the composites with ZrO₂ contents greater than the critical value showed a large oxidation zone, whereas the composites with ZrO₂ contents less than the critical value revealed a much-thinner oxidation zone. The results also indicated that the formation of zircon (ZrSiO₄) at 1200°C, through the reaction between ZrO₂ and the oxide product, could reduce the oxidation rate of the composite.     

Immiscibility Area in the System TiO2–ZrO2–SiO2

A furnace for use in conjunction with the X-ray spectrometer was developed which was capable of heating small powdered specimens in air to temperatures as high as 1850°C. This furnace was also used for the heating and quenching of specimens in air from temperatures as high as 1850°C. An area of two liquids coexisting between 20 and 93 weight % TiO₂ above 1765°± 10°C. was found to exist in the system TiO₂–SiO₂, which is in substantial agreement with the previous work of other investigators. The area of immiscibility in the system TiO₂–SiO₂ was found to extend well into the system TiO₂–ZrO₂–SiO₂. The two liquids were found to coexist over a major portion of the TiO₂ (rutile) primary-phase area with TiO₂ (rutile) being the primary crystal beneath both liquids. The temperature of two-liquid formation in the ternary was found to fall about 80°C. with the first additions of ZrO₂ up to 3%. With larger amounts of ZrO₂ the change in the temperature of the boundary of the two-liquid area was so slight as to be within the limits of error of the temperature measurement. Primary-phase fields for TiO₂ (rutile), tetragonal ZrO₂, and ZrTiO₄ were found to exist in the system TiO₂–ZrO₂–SiO₂. SiO₂ as high cristobalite is known to exist in the system TiO₂–ZrO₂–SiO₂.     

High-Temperature Stability of Lanthanum Orthophosphate (Monazite) on Silicon Carbide at Low Oxygen Partial Pressures

The stability of lanthanum orthophosphate (LaPO₄) on SiC was investigated using a LaPO₄-coated SiC fiber at 1200°–1400°C at low oxygen partial pressures. A critical oxygen partial pressure exists below which LaPO₄ is reduced in the presence of SiC and reacts to form La₂O₃ or La₂Si₂O₇ and SiO₂ as the solid reaction products. The critical oxygen partial pressure increases from ∼0.5 Pa at 1200°C to ∼50 Pa at 1400°C. Above the critical oxygen partial pressure, a thin SiO₂ film, which acts as a reaction barrier, exists between the SiC fiber and the LaPO₄ coating. Continuous LaPO₄ coatings and high strengths were obtained for coated fibers that were heated at or below 1300°C and just above the critical oxygen partial pressure for each temperature. At temperatures above 1300°C, the thin LaPO₄ coating becomes morphologically unstable due to free-energy minimization as the grain size reaches the coating thickness, which allows the SiO₂ oxidation product to penetrate the coating.     

Crack-Healing Behavior of Al2O3 Toughened by SiC Whiskers

Al₂O₃ reinforced by SiC whiskers (Al₂O₃/SiC-W) was hot-pressed to investigate the crack-healing behavior. Semielliptical surface cracks of 100 μm in surface length were introduced using a Vickers indenter. The specimens containing precracks were crack-healed at temperatures between 1000° and 1300°C for 1 h in air, and their strengths were measured by three-point bending tests at room temperature and elevated temperatures between 400° and 1300°C. The results show that Al₂O₃/SiC-W possesses considerable crack-healing ability. The surface cracks with length of 2 c = 100 μm could be healed by crack-healing at 1200° or 1300°C for 1 h in air. Fracture toughness of the material was also determined. As expected, the SiC whiskers made their Al₂O₃ tougher.     

Fabrication and Properties of Low-Shrinkage Reaction-Bonded Mullite

Mullite ceramics were fabricated according to the recently developed reaction-bonded Al₂O₃ (RBAO) technology. Green compacts consisting of mechanically alloyed Al, SiC, and Al₂O₃ were heat-treated in two steps. During the first hold at 1200°C, Al and SiC were oxidized to form Al₂O₃ and SiO₂. On further heating, mullite was formed which then sintered during the second hold at 1550°C. All reactions involved in the process were associated with volume expansions that almost compensated for the shrinkage on sintering. Processing details and microstructure development are discussed. Reaction-bonded mullite ceramics exhibit high fracture strength, e.g., 290 MPa at a density of 97% of theoretical density.