Low-temperature firing and microwave dielectric properties of MgNb2-xVx/2O6-1.25x ceramics

MgNb_2-xV_x/2O_6-1.25x (0.1≤x≤0.6) ceramics with orthorhombic columbite structures were prepared at low-temperature by a solid-phase process. The phase component, microscopic morphology, low-temperature sintering mechanism and microwave dielectric performance of MgNb_2-xV_x/2O_6-1.25x ceramics were comprehensively investigated. Low-temperature sintering densification of dielectric ceramics was achieved via the nonstoichiometric substitution of vanadium (V) at the Nb-site. In contrast to pure MgNb₂O₆ ceramics, the sintering temperature of MgNb_2-xV_x/2O_6-1.25x (x = 0.2) ceramics was reduced by nearly 300 °C owing to the liquid-phase assisted sintering mechanism. The liquid phase arises from the autogenous low-melting-point phase. Meanwhile, MgNb_2-xV_x/2O_6-1.25x (x = 0.2) samples with nonstoichiometric substitution could achieve a more than 900% improvement in the Q × f value, compared with stoichiometrically MgNb_2-xV_xO₆ (x = 0.1, 0.2) ceramics. Finally, MgNb_2-xV_x/2O_6-1.25x dielectric ceramics possess outstanding microwave dielectric properties: ε_r = 20.5, Q × f = 91000, and τ_f = -65 ppm/°C when sintered at 1030 °C for x = 0.2, which provides an alternative material for LTCC technology and an effective approach for low-temperature sintering of Nb-based microwave dielectric ceramics.     

Dielectric and magnetic properties,NEXAFS spectroscopy of Co-doped of multicomponent bismuth niobate pyrochlore

Two series of Bi₂Mg_1-xCo_xNb₂O₉ and Bi₂MgNb_2-2xCo_2xO_9-δ preparations with pyrochlore structure were synthesized using solid phase method. It was found that solid solutions are formed in Bi₂MgNb_2-2xCo_2xO_9-δ series, foreign phases of MgNb₂O₆ and Bi₅Nb₃O₁₅ are fixed in Bi₂Mg_1-xCo_xNb₂O₉ samples, no impurity cobalt-containing phases were detected. The method of magnetic susceptibility and NEXAFS-spectroscopy investigated the electronic state and character of exchange interactions of cobalt atoms in solid solutions with the pyrochlore structure. According to X-ray spectroscopy and magnetic susceptibility of cobalt atoms in solid solutions in a dominant amount are in the charge state of Co(II) in the form of monomers and exchange-bound clusters mainly with antiferromagnetic type of exchange. Ceramics Co-doping of multicomponent bismuth niobate pyrochlore has at room temperature a high dielectric permeability of 84 and small dielectric losses of 0.001. The energy of activation of conductivity is equal to 0.75–1.03 eV. This type of ceramics with excellent dielectric properties can potentially be used as multilayer ceramic capacitors.     

Effect of zirconium deficiency on structure characteristics,morphology and microwave dielectric properties of Li2Mg3Zr1-xO6 ceramics

To suppress the impurity phases and porous microstructure caused by lithium volatilization, the Li₂Mg₃ZrO₆ and Zr-deficiency Li₂Mg₃Zr_1-xO₆ (x = 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were successfully synthesized via the solid-state method assisted with atmosphere-controlled sintering. The influences of non-stoichiometric on structure characteristics, morphology and microwave dielectric properties of Li₂Mg₃Zr_1-xO₆ ceramics were investigated. The XRD and SEM results proved that the Zr-deficiency restrained the formation of impurity phases and remarkably improved the densification of Li₂Mg₃Zr_1-xO₆ samples. The variation trend of dielectric constant (ε_r) was explained by the relative density and theoretical dielectric polarizability. The quality factor (Q × f) was strongly associated with the impurity phases and relative density. Additionally, the temperature coefficient of resonant frequency (τ_f) showed the same trend as the total bond energy E_total, indicating the bond energy might play vital roles in thermal stability of Li₂Mg₃Zr_1-xO₆ samples. Typically, the Li₂Mg₃Zr_1-xO₆ sample obtained at x = 0.06 possessed remarkable dielectric performances: ε_r = 13.13, Q × f = 116,400 GHz (10.14 GHz) and τ_f = ?26.30 ppm/°C.     

Effect of substituting Al3+ for Ti4+on the microwave dielectric performance of Mg2Ti1-xAl4/3xO4 (0.01 ≤ x ≤ 0.09) ceramics

In this paper, Mg₂Ti_1-xAl_4/3xO₄ ceramics (0.01 ≤ x ≤ 0.09) were synthesized through conventional solid-state ceramic route. The cubic spinel structure, microstructure and microwave properties of Mg₂Ti_1-xAl_4/3xO₄ (x = 0.01, 0.03, 0.05, 0.07, 0.09) ceramics were investigated by X-ray diffraction, Raman spectra, infrared spectra. Rietveld refinements confirm that a spinel structure phase with space group Fd-3m is formed. The variation of the permittivity was concerned with the ionic polarizability, and the value of τ_f was influenced by the bond valence. Both Q × f values and relative density showed an identical trend. Intrinsic properties of Mg₂Ti_1-xAl_4/3xO₄ ceramics were analyzed by infrared spectra and Raman spectra. In addition, the Mg₂Ti_1-xAl_4/3xO₄ ceramic sintered at 1420 °C for 4 h possessed optimal dielectric properties (ε_r = 14.65, Q × f = 182347 GHz, τ_f = −57.7 ppm/°C) when x = 0.09.     

Thermal expansion of bismuth magnesium tantalate and niobate pyrochlores

The thermal behavior of pyrochlores composing of Bi_1·5Mg_0.75M_1.5O_6.75 (M = Nb, Ta) (sp. gr. Fd-3m:2) was studied using the high-temperature X-ray powder diffraction in a wide temperature range of 30–1200 °C. At a temperature above 1080 °C both compounds thermally dissociate forming one of the reaction products MgMO₆ (M = Nb, Ta) whose reflexes are traced on X-ray diffraction patterns after cooling the sample down to room temperature. In the case of Bi_1·5Mg_0·75Nb_1·5O_6.75 orthoniobate α-BiNbO₄ forms at about 800–1020 °C as admixture. The thermal expansion analysis of Bi_1·5Mg_0.75M_1.5O_6.75 (M = Nb, Ta) showed that the compounds studied belong to slightly or moderately expanding materials. Thermal expansion for both compounds is isotropic. With a rise in temperature the unit cell parameter a and the thermal expansion coefficient (TEC) are increased uniformly and slightly for M = Ta (Nb): from 10.52822 (10.55325) Å (30 °C) up to 10.59181 (10.62801) Å (1050 °C) and from 3.8 (30 °C) up to 7.4 (8.9) × 10⁻⁶ °С⁻¹ at 800 °C respectively. The average TEC values in the range of 30–800 °C range are 5.6 (6.4) × 10⁻⁶ °C⁻¹ for M = Ta (Nb) respectively. Bi_1.5Mg_0.75Nb_1.5O_6.75 is characterized with the highest thermal expansion that may be related to the longer bond-length of Nb(Bi)–O in the polyhedra.     

Effect of Mn:Mg ratio on sintering behavior and microwave dielectric properties of (Mn,Mg)V2O6 ceramics at ultra-low sintering temperature

Ultra-low-firing-temperature ceramics (Mn_1−xMg_x)V₂O₆ (x = 0–1) were prepared using the conventional solid-state reaction method. The effects of the Mn:Mg ratio on the crystal structure and microwave dielectric properties of the prepared ceramics were systematically investigated. The results indicated that an appropriate Mn:Mg ratio effectively improves the dielectric properties of the compounds. Specimens with x = 0.01 and x = 0.93 sintered at 630 °C exhibited the following microwave dielectric properties: ε_r = 12.4 and 9.8, high Q×f = 57,000 and 21,000 GHz, and τ_f = –15 and −24 ppm/°C, respectively. This suggests that the (Mn_0.99Mg_0.01)V₂O₆ ceramic is a potential material for ULTCC applications.     

Effect of Mn2+ doping on the lattice and the microwave dielectric properties of MgTa2O6 ceramics

A series of Mn²⁺-doped Mg_1-xMn_xTa₂O₆ (x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.12) ceramics were synthesized by solid-state reaction method. The influence of introducing Mn–O bonds as a partial replacement for Mg–O bonds on the lattice and microwave dielectric properties was systematically investigated. XRD and Rietveld refinement confirm that Mn²⁺ occupies the 2a Wyckoff position and forms a pure trirutile phase. Moreover, based on the chemical bond theory, the dielectric constant is mainly affected by the ionicity of the Ta–O bond. The lattice and dielectric properties remain relatively stable with Mn²⁺ doping below 0.1, but excessive Mn²⁺ doping leads to pronounced distortion of the lattice, which is not beneficial for lattice stability and microwave dielectric properties. Introducing an appropriate amount of Mn–O bonds with high bond dissociation energy facilitates MgO6 octahedron stability, which improves the thermal stability of the lattice. Accordingly, the microwave dielectric properties for 0.06 Mn²⁺-doped MgTa₂O₆ ceramics were determined: ε_r = 28, Q × f = 105,000 GHz (at 7.5 GHz), τ_f = 19.5 ppm/^°C.     

Effects of Magnesium–Tungsten co-substitution on crystal structure and microwave dielectric properties of CaTi1-x(Mg1/2W1/2)xO3 ceramics

CaTi_1-x (Mg_1/2W_1/2)_xO₃ (x = 0, 0.02, 0.04, 0.06, 0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. Crystal structure and microwave dielectric properties of CaTi_1-x (Mg_1/2W_1/2)_xO₃ system were systematically investigated based on chemistry bond theory (P–V-L theory) for the first time. The pure perovskite phase was obtained for all doped samples, as confirmed through the XRD and Rietveld refinement results. The lattice characteristics were closely related to the microwave dielectric properties. The bond ionicity, lattice energy, and bond energy affected the dielectric constant, quality factor, and temperature stability of the ceramic material. Through the use of (Mg_1/2W_1/2)⁴⁺ doped on B-site, the CaTi_1-x (Mg_1/2W_1/2)_xO₃ system can maintain a high dielectric constant (ε_r > 100) while effectively reducing the τ_f value from 800 ppm/^°C to less than 300 ppm/^°C and improving the Q × f value to 9650 GHz (at 3.76 GHz).     

Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films,x ≤ 0.11

(Ta₂O₅)_1-x- (TiO₂)_x (TTO_x) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta₂O₅ structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTO_x/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTO_x films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10^?5 to 10^?8 A cm^?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10^?8 A cm^?2, at the electric field of 3.5 × 10⁵ V cm^?1, show preferred potential as a dielectric for high-density silicon memory devices.     

Correlation of structure and dielectric response in Ce-doped double perovskite cobaltite

Double perovskite Bi₂Ca_2-xCe_xCoO₆; x = 0.00, 0.05, 0.10 and 0.15 (BCCCO) is synthesized by co-precipitation route. X-ray diffraction (XRD) confirms the monoclinic single-phase crystal structure with negligible variation in unit cell parameters, indicating that the Cerium (Ce) has been successfully incorporated. With Ce doping, the average crystallite size of Bi₂Ca₂CoO₆ (BCCO) nanoparticles decreases. Scherrer's formula was used to determine the crystallite sizes (33–37 nm) of BCCO nanoparticles. Jonscher's power law is used to investigate the conduction mechanism of all the prepared specimens. The power-law specifies the correlated barrier hopping for BCCCO x = 0.00 and 0.05, short polaron tunneling for x = 0.10, while BCCCO x = 0.15 follows overlapping large polaron tunneling. The dielectric permittivity has been calculated with a frequency range of 20 Hz - 3 MHz, and the Ce doped samples show a high value of dielectric permittivity ε_r = 1.79 × 10⁵ at 500 °C. The influence of crystallite size on the dielectric permittivity of BCCCO was examined in this work. The relaxation time and spreading factor of all samples are investigated using Non-linear Debye's function. All these features are studied as a function of frequency at temperatures ranging from 100 to 500 °C. Here, the DC electrical conductivity of BCCCO is investigated by the four-probe method at 50–400 °C. In Ce-doped specimen the lowest value of thermal conductivity (k = 0.797 W/m-K at 120 °C) has been observed.     

Effects of W6+ substitution on crystal structure and microwave dielectric properties of Li3Mg2NbO6 ceramics

Li₃Mg₂(Nb_1-xW_x)O_6+x/2 (0 ≤ x ≤ 0.08) ceramics were synthesized by the solid-state reaction route. The effects of W⁶⁺ substitution on the phase composition, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated systematically. The XRD results showed that all the samples formed a pure solid solution in the whole doping range. The SEM iamges and relative density revealed the dense structure of Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics. The relationship between the crystal structure and dielectric properties of Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics was researched through polarizability, average bond valence, and bond energy. The substitution of W⁶⁺ for Nb⁵⁺ in Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics significantly promoted the Q × f values. In addition, the increase of W⁶⁺ content improved the thermal stability of the Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics. The Li₃Mg₂(Nb_0.94W_0.06)O_6.03 ceramics sintered at 1175 °C for 6h possessed excellent properties: ε_r ~ 15.82, Q × f ~ 124,187 GHz, τ_f ~ −18.28 ppm/°C.     

The structure evolution and microwave dielectric properties of MgAl2-x(Mg0·5Ti0.5)xO4 solid solutions

In the present work, MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ (x = 0.02, 0.04, 0.06, 0.08, 0.10) solid solutions were synthesized via the traditional solid-state reaction route. The valence state of Ti ions, crystal structural characteristics, and microwave dielectric properties were discussed. A solid solution with spinel structure was revealed by the Rietveld refinement results. The partial substitution of (Mg_0·5Ti_0.5)³⁺ for Al³⁺ lowered the sintering temperature and improved the Q × f value of MgAl₂O₄ ceramic. The MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ solid solutions with x = 0.06 can be well sintered at 1425 °C in an oxygen atmosphere for 8 h and exhibits excellent microwave dielectric properties with ε_r = 9.1, Q × f = 98,000 GHz, τ_f = −61.36 ppm/°C. The sintering temperature of MgAl_1·94(Mg_0·5Ti_0.5)_0.06O₄ microwave dielectric ceramics was approximately 200 °C lower than that of conventional MgAl₂O₄ ceramics.     

Effect of Mg doping on magnetic,and dielectric properties of NiCr2O4 nanoparticles

The structural, magnetic, and dielectric properties of spinel Magnesium (Mg) doped Nickel chromite (NiCr₂O₄) nanoparticles (NPs) have been studied in detail. The X-ray powder diffraction exhibited normal spinel phase formation of Mg_xNi_1-xCr₂O₄ (x = 0, 0.2, 0.4, 0.6, and 1) NPs with a maximum average crystallite size of about 44 nm for x = 0.2 composition. The FTIR spectra of these NPs revealed the characteristic Ni–O and Mg–O and Cr–O bands around 639 cm^?1 and 497 cm^?1, respectively which confirmed the spinel structure. Temperature-dependent zero field cooled and field cooled graphs of NiCr₂O₄ NPs showed phase changes from ferrimagnetic to paramagnetic state at 86 K, while MgCr₂O₄ NPs showed antiferromagnetic (AFM) transition at Neel temperature (T_N) at 15 K due to corner-sharing of Cr³⁺ ions at a tetrahedral lattice site resulting in a highly magnetic frustrated structure. The field dependent magnetization (M ? H) loops of Mg_xNi_1-xCr₂O₄ NPs confirmed the competing AFM interactions and ferrimagnetic interactions resulting in a sharp decreased saturation magnetization with Mg doping. Dielectric constant, dielectric loss, and ac conductivity of these NPs showed size-dependent variation and depicted maximum value at x = 0.2 Mg concentration. In summary, the magnetic and dielectric properties of Mg doped NiCr₂O₄ NPs were modified by variations in the average crystallite size and magnetic exchange interactions, which may be suitable for different technological applications.     

Pulse energy-storage performance and temperature stability of Bi2O3-added BaTiO3 based ceramics

The temperature stability and temperature stability range of barium titanate-based pulse energy-storage ceramics were modified by Bi₂O₃ tailoring in (Ba_0.98-xLi_0.02Bi_x) (Mg_0·04Ti_0.96)O₃ (x = 0, 0.025, 0.05, 0.075, 0.1) and (Ba_1.03-1.5xLi_0.02Bi_x) (Mg_0·04Ti_0.96)O₃ (x = 0.125, 0.15, 0.2, 0.25) ceramics. Excellent pulse energy-storage performances of ceramic films are achieved via the new dual priority strategy of establishing cationic vacancies and forming a liquid phase. The dielectric constant plateau appears due to the cubic phase and space charges. Outstanding temperature stability, frequency stability and antifatigue performance are obtained in the ceramics, and their variations are all less than 15%. The comprehensive energy-storage properties with dual priority parameters of energy-storage density and efficiency of 3.13 J/cm³ and 91.71%, accompanied by an excellent pulse discharge energy density of 2.48 J/cm³, current density of 1313.23 A/cm² and power density of 195.26 MW/cm³ are gained at x = 0.1. The perfect pulse energy-storage performances as well as ultrahigh stability are correlated with synergistic effects of multiphase coexistence, cubic phase, liquid-phase sintering, grain size, ceramic resistance, space charges and polar nanoregions. The comprehensive parameters indicate that the (Ba_0·88Li_0·02Bi_0.1) (Mg_0·04Ti_0.96)O₃ ceramics have potential application in high precision fields.     

Cost effective synthesis of CuxBi2-xSe3 photocatalysts by sol-gel method and their enhanced photodegradation and antibacterial activities

A simple sol-gel approach was used to synthesize Cu doped Bismuth Selenide nanoparticles denoted as Cu_xBi_2-xSe₃ (x = 0.1, 0.2), in order to comprehend the effect of Cu-dopant on the photocatalytic and antibacterial activity of Bismuth Selenide. The structural properties of prepared samples were investigated by the XRD technique and results showed the formation of hexagonal Cu_xBi_2-xSe₃ (x = 0.1, 0.2). The average crystallite size of Cu_xBi_2-xSe₃ was found to increase from 39 nm to 42 nm with the increase in the concentration of Cu ions. Atomic force microscopy (AFM) was used to confirm the morphology and particle size of prepared samples. Photoluminescence (PL) studies revealed the decrease in band gap from 1.66 eV to 1.61 eV for Cu_0.1Bi_1.9Se₃ and Cu_0.2Bi_1.8Se₃, respectively. The Raman spectra of Cu_xBi_2-xSe₃ (x = 0.1, 0.2) showed two vibrational modes at 130 cm^?1 and 170 cm^?1. The photocatalytic performance of prepared nanoparticles was evaluated by the removal of methyl blue (MB) and malachite green (MG), under natural sunlight. Cu doped Bismuth Selenide Cu_0.2Bi_1.8Se₃ exhibited higher photocatalytic activity as compared to Cu_0.1Bi_1.9Se₃ and undoped Bismuth Selenide with the 97% and 99% degradation of MB and MG, respectively. Hence, Cu doping proved an efficient way to enhance the photocatalytic response of Bismuth Selenide. Through the antibacterial activity, it was further disclosed that the Cu doped samples had better inhibition zones than undoped Bismuth Selenide. The maximum inhibition zone (29 mm) was observed at optimum doping concentration for Cu_0.2Bi_1.8Se₃. From the results, it can be deduced that Cu_0.2Bi_1.8Se₃ can be as effective photocatalytic and antibacterial agent to treat water pollution.     

Structural dependence of microwave dielectric properties in ilmenite-type Mg(Ti1-xNbx)O3 solid solutions by Rietveld refinement and Raman spectra

Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were prepared by the conventional solid-state reaction method. The phase composition, sintering characteristics, microstructure and dielectric properties of Ti⁴⁺ replacement by Nb⁵⁺ in the formed solid solution Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were systematically studied. The structural variations and influence of Nb⁵⁺ doping in Mg(Ti_1-xNb_x)O₃ were also systematically investigated by X-ray diffraction and Raman spectroscopy, respectively. X-ray diffraction and its Rietveld refinement results confirmed that Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics crystallised into an ilmenite-type with R-3 (148) space group. The replacement of the low valence Ti⁴⁺ by the high valence Nb⁵⁺ can improve the dielectric properties of Mg(Ti_1-xNb_x)O₃ (x = 0–0.09). This paper also studied the different sintering temperatures for Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics. The obtained results proved that 1350 °C is the best sintering temperature. The permittivity and Q × f initially increased and then decreased mainly due to the effects of porosity caused by the sintering temperature and the doping amount of Nb₂O₅, respectively. Furthermore, the increased Q × f is correlated to the increase in Ti–O bond strength as confirmed by Raman spectroscopy, and the electrons generated by the oxygen vacancies will be compensated by Nb⁵⁺ to a certain extent to suppress Ti⁴⁺ to Ti³⁺, which was confirmed by XPS. The increase in τ_f from ?47 ppm/°C to ?40.1 ppm/°C is due to the increment in cell polarisability. Another reason for the increased τ_f is the reduction in the distortion degree of the [TiO₆] octahedral, which was also confirmed by Raman spectroscopy. Mg(Ti_0.95Nb_0.05)O₃ ceramics sintered at 1350 °C for 2 h possessed excellent microwave dielectric properties of ε_r = 18.12, Q × f = 163618 GHz and τ_f = ?40.1 ppm/°C.     

Valence state of europium and samarium in Ln2Hf2O7 (Ln = Eu,Sm) based oxygen ion conductors

Ln₂(Hf_2-xLn_x)O_7-x/2 (Ln = Sm, Eu; x = 0.1) pyrochlores have been prepared via mechanical activation of oxide mixtures, followed by heat treatment for 4h at 1450 and 1600 °C, respectively. According to the ESR data, the Eu cations on the Hf site in the Hf_1-xEu_xO₆ octahedra in pyrochlore Eu₂(Hf_2-xEu_x)O_7-x/2 (x = 0.1) are most readily oxidized and reduced. Oxidation at 840 °C for 24h in air reduces the total conductivity of the Ln₂(Hf_2-xLn_x)O_7-x/2 (Ln = Sm, Eu; x = 0.1) by a factor of 2.5–6, due to the decrease in the concentrations of oxygen vacancies and Ln²⁺ ions as a result of the oxidation. The anomalous low-frequency behavior of the permittivity of the Eu₂(Hf_2-xEu_x)O_7-x/2 (x = 0.1) at ~800 °C can be understood in terms of the changes in the oxygen sublattice of the pyrochlore structure as a result of the oxidation of divalent europium and partial filling of oxygen vacancies at this temperature.     

Sol–Gel‐Derived Amorphous‐MgNb2O6 Thin Films for Transparent Microelectronics

In this work, transparent amorphous‐MgNb₂O₆ thin films were fabricated on ITO/glass substrates using the sol–gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb₂O₆ films at various annealing temperatures is investigated. In this study, MgNb₂O₆ films exhibited the amorphous phase when the annealing temperature was below 600°C. From X‐ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg²⁺, Nb⁵⁺, Nb⁴⁺, and O^2?. Furthermore, the Nb⁴⁺ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (λ = 400–800 nm) is over 80% for all MgNb₂O₆/ITO/glass samples, whereas the optical band gap (E_g) for all samples is estimated at ~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 × 10^?7 A/cm² at 1 V. In this study, the fabrication procedure and experiment results of MgNb₂O₆ films are introduced for transparent microelectronics.     

Design and characterization of novel manganite perovskites Ba1-xBixTi1-xMnxO3 (0≤x≤0.2)

Polycrystalline manganite powders of Ba_1-xBi_xTi_1-xMn_xO₃ (x = 0, x = 0.1 and x = 0.2) were synthesized by the conventional solid-state reaction process. Their crystal structure, morphological, optical, dielectric and electrical properties were investigated. X-ray diffraction of the prepared samples was made at room temperature and confirmed the formation of a perovskite phase. Structural refinement, using the Rietveld method, revealed a tetragonal P4mm phase of pure BTO and a tetragonal P4/mmm phase with the presence of vacancies for both doped samples (x = 0.1 and x = 0.2). Scanning electron microscopy indicated that the perovskite samples had a grain size smaller than 1 μm. From UV–vis–NIR spectra, we found that the band gap reduces from 3.29 eV to 1.48 eV with the increase of Bi and Mn amounts, resulting in a shift of the absorption wavelength region toward the visible range. Dielectric analysis was conducted in a wide range of temperatures at different frequencies. Phase transitions were identified from thermal dielectric results, showing that the samples exhibited a non-relaxor behavior. The structural transformation from tetragonal to cubic structure corresponding to the transition from ferroelectric phase to paraelectric phase was observed in the dielectric properties investigation. The complex impedance spectroscopy indicated the presence of grain and grain boundary effects in the conduction mechanism. Electrical analysis showed that doping with Bi and Mn enhanced the DC conductivity. Furthermore, the DC conductivity temperature dependence confirmed that the studied samples present a semiconductor behavior. The activation energies of grain and grain boundaries depended on the amount of incorporated Bi and Mn. The activation energy of grain varied between 0.54 and 0.87 eV suggesting that the DC electrical conductivity is governed by ionized oxygen vacancies. The activation energy of grain boundaries varied between 0.85 and 0.58 eV.