Enhancements of thermoelectric performance in n-type Bi2Te3-based nanocomposites through incorporating 2D Mxenes

Bi₂Te_2.7Se_0.3 compound has been considered as an efficient n-type room-temperature thermoelectric (TE) material. However, the large-scale applications for low-quality energy harvesting were limited due to its low energy-conversion efficiency. We demonstrate that TE performance of Bi₂Te_2.7Se_0.3 system is optimized by 2D Ti₃C₂T_x additive. Here, a 43% reduction of electrical resistivity is obtained for the nanocomposites at 380 K, originating from the increased carrier concentration. Consequently, the g = 0.1 sample shows a maximum power factor of 1.49 Wmm^?1K^?2. Meanwhile, the lattice thermal conductivity for nanocomposite samples is reduced from 0.77 to 0.41 Wm^?1K^?1 at 380 K, due to the enhanced phonon scattering induced by the interfaces between Ti₃C₂T_x nanosheets and Bi₂Te_2.7Se_0.3 matrix. Therefore, a peak ZT of 0.68 is achieved at 380 K for Bi₂Te_2.7Se_0.3/0.1 wt% Ti₃C₂T_x, which is enhanced by 48% compared with pristine sample. This work provides a new route for optimizing TE performance of Bi₂Te_2.7Se_0.3 materials.     

Fabrication and electrical properties of Bi2-xSbxTe3 ternary nanopillars array films

Highly oriented Bi_2-xSb_xTe₃ (x?=?0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi_2-xSb_xTe₃ films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi_2-xSb_xTe₃ films transforms from n-type to p-type when x?>?1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi₂Te₃. Bi_2-xSb_xTe₃ film with x?=?1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95?×?10⁵ S?m^?1 at T?=?300?K, which is approximately ten times higher than that of the undoped Bi₂Te₃ film, and three times higher than previous report for Bi_0.5Sb_1.5Te₃ films and bulk materials. The maximum power factor PF of Bi_0.5Sb_1.5Te₃ nanopillars array film is about 3.83?μW?cm^?1 K^?2 at T?=?475?K. Highly oriented (Bi,Sb)₂Te₃ nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.     

Shift of tellurium solid-solubility limit and enhanced thermoelectric performance of bismuth antimony telluride milled with yttria-stabilized zirconia balls and vessels

As a thermoelectric material, Bi_0.3Sb_1.7Te_3.0+x (x = 0‒0.05) was fabricated by mechanical alloying using yttria-stabilized zirconia (YSZ) ceramic balls and vessels, followed by hot pressing. The effects of the added tellurium on the thermoelectric properties of Bi_0.3Sb_1.7Te_3.0 fabricated with YSZ milling media were investigated. All sintered samples were isotropic and showed p-type conduction. The tellurium solid-solubility limit for Bi_0.3Sb_1.7Te_3.0 was determined to be x = 0.01 by differential thermal analysis (DTA). The solid-solubility limit of the sample fabricated using YSZ was narrower than that of the congener prepared with Si₃N₄ balls and stainless-steel metal vessels. Among the evaluated compositions, the Bi_0.3Sb_1.7Te_3.01 sintered disk had the highest dimensionless figure of merit, ZT = 1.30, at room temperature. This value was superior to that of Bi_0.3Sb_1.7Te_3.0+x fabricated using metal vessels. Thus, selection of the milling media affected the optimum doping amount and maximum ZT.     

Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition

The ease of Te sublimation from Bi₂Te₃-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi₂Te₃-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi₂Te_2.7Se_0.3 powders resulted in significant suppression of the generation of pores in Bi₂Te_2.7Se_0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi₂Te_2.7Se_0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi₂Te₃-based alloys without sacrificing thermoelectric performance.     

Substrate temperature-dependent thermoelectric figure of merit of nanocrystalline Bi2Te3 and Bi2Te2.7Se0.3 prepared using pulsed laser deposition supported by DFT study

This work reports the pulsed laser deposition of n-type selenium (Se) doped bismuth telluride (Bi₂Te_2.7Se_0.3) and n-type bismuth telluride (Bi₂Te₃) nanostructures under varying substrate temperatures. The influence of the substrate temperature during deposition on the structural, morphological and thermoelectric properties for each phase was investigated. Density functional theory (DFT) simulations were employed to study the electronic structures of the unit-cells of the compounds as well as their corresponding partial and total densities of states. Surface and structural characterization results revealed highly crystalline nanostructures with abundant grain boundaries. Systematic comparative analysis to determine the effect of Se inclusion into the Bi₂Te₃ matrix on the thermoelectric properties is highlighted. The dependence of the thermoelectric figure of merit (ZT) of the nanostructures on the substrate temperatures during deposition was demonstrated. The remarkable room temperature thermoelectric power factor (PF) of 2765 μW/mK² and 3179 μW/mK² for pure and Se-doped Bi₂Te₃ compounds respectively, signifies their potential of being useful in cooling and power generation purposes. The room temperature ZT values of the Se-doped Bi₂Te₃ was found to be 0.92, about 30% enhancement as compared with the pure phase, which evidently results from the suppressed thermal conductivity in the doped species caused by phonon scattering at the interfaces.     

Experimental estimation of the Lorenz number and scattering parameter for p-type bismuth antimony telluride via multiple doping under constant temperature conditions

The effects of the addition of lead as one of the multiple dopants in p-type Bi_0.3?xSb_1.7Te_3.0+0.01Pb_x (x = 0, 0.001, 0.002, 0.003) fabricated by mechanical alloying followed by hot pressing were investigated. Measurements by X-ray diffraction (XRD), differential thermal analysis (DTA), and scanning electron microscopy (SEM) showed the same matrix morphology. The second phase by doped elements was not confirmed by transmission electron microscopy (TEM). By using the lead addition results and previously studied tellurium doping effects, the Lorenz number L was evaluated to be 0.73–1.18 × 10^?8 W S^?1 K^?2. The scattering parameter γ and reduced Fermi energy η were estimated by using expressions on the basis of a one-electron approximation, measured Seebeck coefficients, and the estimated L at room temperature. The γ ranged approximately from ?1.06 to ?0.60 and showed a mutual effect of acoustic and optical phonon scattering. The relationship between a dimensionless figure of merit ZT and η was clarified. The optimum η was determined as ?1.25 at ZT = 1.26. From these results, multi-doped Bi_0.3Sb_1.7Te_3.0 could be applied to evaluate L, γ, and η at a constant temperature.     

Thermoelectric properties of Cu-dispersed bi<Subscript>0.5</Subscript>sb<Subscript>1.5</Subscript>te<Subscript>3</Subscript>

A novel and simple approach was used to disperse Cu nanoparticles uniformly in the Bi_0.5Sb_1.5Te₃ matrix, and the thermoelectric properties were evaluated for the Cu-dispersed Bi_0.5Sb_1.5Te₃. Polycrystalline Bi_0.5Sb_1.5Te₃ powder prepared by encapsulated melting and grinding was dry-mixed with Cu(OAc)₂ powder. After Cu(OAc)₂ decomposition, the Cu-dispersed Bi_0.5Sb_1.5Te₃ was hot-pressed. Cu nanoparticles were well-dispersed in the Bi_0.5Sb_1.5Te₃ matrix and acted as effective phonon scattering centers. The electrical conductivity increased systematically with increasing level of Cu nanoparticle dispersion. All specimens had a positive Seebeck coefficient, which confirmed that the electrical charge was transported mainly by holes. The thermoelectric figure of merit was enhanced remarkably over a wide temperature range of 323-523 K.     

Synthesis of n-type Bi2Te1-xSex compounds through oxide reduction process and related thermoelectric properties

We propose a new process for the fabrication of n-type Bi₂Te_3-xSe_x (x = 0, 0.25, 0.4, 0.7) compounds. The compounds could be synthesized successfully using only oxide powders as the starting materials via the mechanical milling, oxidation, reduction, and spark plasma sintering processes. The controllability of the Se content could be ascertained by structural, electrical, and thermal characterizations, and the highest thermoelectric figure of merit (ZT) of 0.84 was achieved in Bi₂Te_2.6Se_0.4 compound at 423 K without any intentional doping. This process provides a new route to fabricate n-type Bi₂Te_3-xSe_x compounds with competitive ZTs using all oxide starting materials.     

Hydrothermal method for the synthesis of Sb2Te3, and Bi0.5Sb1.5Te3 nanoplates and their thermoelectric properties

In this study, a modified hydrothermal method is reported for the preparation of Sb₂Te₃ and Bi_0.5Sb_1.5Te₃ nanoplates and their bulk samples was prepared by spark plasma sintering (SPS). The crystal structure, morphology, and thermoelectric properties were investigated. The microstructure results indicate that the bulk samples consisted nanograins after SPS. The presence of nanograins, high Seebeck coefficient (181 μV/K), high electrical conductivity (763 Ω^?1 cm^?1), and low thermal conductivity (1.15 W/mK) has been achieved in Sb₂Te₃ nanoplate bulk samples. As a result, the dimensionless thermoelectric figure of merit (ZT) of 0.55 at 400 K was achieved. Moreover, the peak ZT shifted to higher temperature compared with other reported results found in literature.     

Optimization of chemical and electrochemical parameters for the preparation of n-type Bi2Te2.7Se0.3 thin films by electrodeposition

A 2^3–1 fractional factorial design comprising four runs and three centre points was applied in order to optimize the electrodeposition process to find a compound with the best stoichiometry leading to a Bi₂Te_2.7Se_0.3 thin film suitable for thermoelectric applications. The key factors considered were the deposition potential, the percentage of bismuth and the percentage of selenium in the solution. The Bi^III, Se^IV, Te^IV electrolyte mixtures in 1 M HNO₃ (pH 0), allowed deposition of ternary alloys to be achieved at room temperature on stainless steel substrates. The deposition mechanism was investigated by linear voltammetry. The films were characterized by micropobe analysis, X-ray diffraction, scanning electron microscopy and atomic force microscopy. The XRD patterns of the film show that the as-deposited are polycrystalline and isostructural to Bi₂Te₃. The SEM study shows that the film is covered by crystallites while the AFM image reveals a low level of roughness.     

Synergistically optimizing electrical and thermal transport properties of Bi2O2Se ceramics by Te‐substitution

Bi₂O₂Se oxyselenides, characterized with intrinsically low lattice thermal conductivity and large Seebeck coefficient, are potential n‐type thermoelectric material in the mediate temperature range. Given the low carrier concentration of ~10¹⁵ cm^?3 at 300 K, the intrinsically low electrical conductivity actually hinders further enhancement of their thermoelectric performance. In this work, the isovalent Te‐substitution of Se plays an effective role in narrowing the band gap, which notably increases the carrier concentration to ~10¹⁸ cm^?3 at 300 K and the electron conduction activation energy has been lowered significantly from 0.33 to 0.14 eV. As a consequence, the power factor has been improved from 104 μW·K^?2·m^?1 for pristine Bi₂O₂Se to 297 μW·K^?2·m^?1 for Bi₂O₂Se_0.96Te_0.04 at 823 K. Meanwhile, the suppressed lattice thermal conductivity derives from the introduced point defects by heavier Te atoms. The gradually decreased phonon mean free path reflects the increasingly intense phonon scattering. Ultimately, the ZT value attains 0.28 for Bi₂O₂Se_0.96Te_0.04 at 823 K, an enhancement by a factor of ~2 as compared to that of pristine Bi₂O₂Se. This study has demonstrated that Te‐substitution of Se could synergistically optimize the electrical and thermal properties thus effectively enhancing the thermoelectric performance of Bi₂O₂Se.     

Recent progress in electrodeposition of thermoelectric thin films and nanostructures

Thermoelectric power generators and coolers have many advantages over conventional refrigerators and power generators such as solid-state operation, compact design, vast scalability, zero-emissions and long operating lifetime with no maintenance. However, the applications of thermoelectric devices are limited to where their unique advantages outweigh their low efficiency. Despite this practical confine, there has been a reinvigorated interest in the field of thermoelectrics through identification of classical and quantum mechanical size effects, which provide additional ways to enhance energy conversion efficiencies in nanostructured materials. Although, there are a few reports which demonstrated the improvement of efficiency through nanoengineering, the successful application of these nanostructures will be determined by a cost-effective and high through-put fabrication method. Electrodeposition is the method of choice to synthesize nanoengineered thermoelectric materials because of low operating and capital cost, high deposition rates, near room temperature operation, and the ability to tailor the properties of materials by adjusting deposition conditions. In this paper, we reviewed the recent progress of the electrodeposition of thermoelectric thin films and nanostructures including Bi, Bi_1−xSb_x, Bi₂Te₃, Sb₂Te₃, (Bi_1−xSb_x)₂Te₃, Bi₂Se₃, Bi₂Te_3−ySe_y, PbTe, PbSe, PbSe_1−xTe_x and CoSb₃.     

The underpotential deposition of Bi2Te3−ySey thin films by an electrochemical co-deposition method

Bi₂Te_3−ySe_y thin films were grown on Au(1 1 1) substrates using an electrochemical co-deposition method at 25 °C. The appropriate co-deposition potentials based on the underpotential deposition (upd) potentials of Bi, Te and Se have been determined by the cyclic voltammetric studies. The films were grown from an electrolyte of 2.5 mM Bi(NO₃)₃, 2 mM TeO₂, and 0.3 mM SeO₂ in 0.1 M HNO₃ at a potential of −0.02 V vs. Ag|AgCl (3 M NaCl). X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to characterize the thin films. XRD and EDS results revealed that the films are single phase with approximate composition of Bi₂Te_2.7Se_0.3. SEM studies showed that the films are homogeneous and have micronsized granular crystallites.     

Optimization of thermoelectric properties of metal‐oxide‐based polymer composites

Thermoelectric modules can be used for thermal energy harvesting. Common rigid thermoelectric stacks usually contain heavy metal alloys such as Bi₂Te₃. In order to substitute conventional materials and to reduce manufacturing costs, nontoxic, inexpensive and abundant materials using low‐cost processes are first choice. This study deals with polymer composites consisting of a polysiloxane matrix filled with thermoelectric Sn_0.85Sb_0.15O₂ particles in micrometer scale. Thin composite sheets have been prepared by doctor blade technique and the Seebeck coefficient, the electrical and thermal conductivity, and the porosity were measured. Platelet‐type particles, consisting of Sn_0.85Sb_0.15O₂‐coated insulating mica substrate and globular Sn_0.85Sb_0.15O₂ particles have been varied in size, coating thickness and were mixed with each other in different ratios. The filler content was varied in order to maximize the figure of merit, ZT, to 1.9 × 10^?5 ± 4 × 10^?6. Owing to their low raw material costs and the high degree of design freedom of polymer composites, one may use these materials in thermoelectric generators for remote low‐power demanding applications. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2014 , 131, 40038.     

Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

The electrochemical reduction process of Bi³⁺, HTeO₂⁺, Sb^III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi³⁺, HTeO₂⁺ and Sb^III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te⁰ is formed firstly on the electrode surface through the electrochemical reduction of HTeO₂⁺; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi³⁺ with Te⁰ to form Bi₂Te₃ takes place; when the cathodic polarizing potential is negative enough, Bi³⁺ and Sb^III react with Te⁰ to form Bi_0.5Sb_1.5Te₃. The results indicate that Bi_0.5Sb_1.5Te₃ films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.     

Electrodeposition of P-type BixSb2−xTey thermoelectric film from dimethyl sulfoxide solution

The electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures in DMSO solutions were investigated using cyclic voltammetry and linear sweep voltammetry measurements. On this basis, Bi_xSb_2−xTe_y film thermoelectric materials were prepared by potentiodynamic electrodeposition technique from mixed DMSO solution, and the compositions, structures, morphologies as well as the thermoelectric properties of the deposited films were also analyzed. The results show that Bi_xSb_2−xTe_y compound can be prepared in a very wide potential range by potentiodynamic electrodeposition technique in the mixed DMSO solutions. After anneal treatment, the deposited film prepared in the potential range of −200 to −400 mV shows the highest Seebeck coefficient (185 μV/K), the lowest resistivity (3.34 × 10⁻⁵ Ω m), the smoothest surface, the most compact structure and processes the stoichiometry (Bi_0.49Sb_1.53Te_2.98) approaching to the Bi_0.5Sb_1.5Te₃ ideal material most. This Bi_0.49Sb_1.53Te_2.98 film is a kind of nanocrystalline material and (0 1 5) crystal plane is its preferred orientation.     

Cost effective synthesis of CuxBi2-xSe3 photocatalysts by sol-gel method and their enhanced photodegradation and antibacterial activities

A simple sol-gel approach was used to synthesize Cu doped Bismuth Selenide nanoparticles denoted as Cu_xBi_2-xSe₃ (x = 0.1, 0.2), in order to comprehend the effect of Cu-dopant on the photocatalytic and antibacterial activity of Bismuth Selenide. The structural properties of prepared samples were investigated by the XRD technique and results showed the formation of hexagonal Cu_xBi_2-xSe₃ (x = 0.1, 0.2). The average crystallite size of Cu_xBi_2-xSe₃ was found to increase from 39 nm to 42 nm with the increase in the concentration of Cu ions. Atomic force microscopy (AFM) was used to confirm the morphology and particle size of prepared samples. Photoluminescence (PL) studies revealed the decrease in band gap from 1.66 eV to 1.61 eV for Cu_0.1Bi_1.9Se₃ and Cu_0.2Bi_1.8Se₃, respectively. The Raman spectra of Cu_xBi_2-xSe₃ (x = 0.1, 0.2) showed two vibrational modes at 130 cm^?1 and 170 cm^?1. The photocatalytic performance of prepared nanoparticles was evaluated by the removal of methyl blue (MB) and malachite green (MG), under natural sunlight. Cu doped Bismuth Selenide Cu_0.2Bi_1.8Se₃ exhibited higher photocatalytic activity as compared to Cu_0.1Bi_1.9Se₃ and undoped Bismuth Selenide with the 97% and 99% degradation of MB and MG, respectively. Hence, Cu doping proved an efficient way to enhance the photocatalytic response of Bismuth Selenide. Through the antibacterial activity, it was further disclosed that the Cu doped samples had better inhibition zones than undoped Bismuth Selenide. The maximum inhibition zone (29 mm) was observed at optimum doping concentration for Cu_0.2Bi_1.8Se₃. From the results, it can be deduced that Cu_0.2Bi_1.8Se₃ can be as effective photocatalytic and antibacterial agent to treat water pollution.     

The influence of CNTs on the thermoelectric properties of a CNT/Bi2Te3 composite

CNT/Bi₂Te₃ composites were prepared from composite powders in which CNTs were implanted in the Bi₂Te₃ matrix powders by a novel chemical route. It was found that the fabricated composite had a microstructure of a homogeneous dispersion of CNTs in the Bi₂Te₃ matrix due to interfacial bonding agents of oxygen atoms attaching to the surface of CNTs. The dimensionless figure of merit (ZT) of the composite shows significantly increased values compared to those of pure binary Bi₂Te₃ in the temperature range of 298–498 K and a maximum ZT of 0.85 was obtained at 473 K. It is considered that the improved thermoelectric performance of the composite mainly originated from thermal conductivity that was reduced by active phonon-scattering at the CNT/Bi₂Te₃ interface.     

Preparation and thermoelectric properties of Bi2SexTe3−x bulk materials

Bi₂Te₃ and Bi₂Se₃ nanoplates were synthesized by a microwave-assisted wet chemical method, and Bi₂Se_xTe_3−x (x=1, 2, 3) bulk nanocomposites were then prepared by hot pressing the Bi₂Te₃ and Bi₂Se₃ nanoplates at 80 MPa and 723 K in vacuum. The phase composition and microstructures of the bulk samples were characterized by powder X-ray diffraction and field-emission scanning electron microscopy, respectively. The electrical conductivity of the Bi₂Se_xTe_3−x bulk nanocomposites increases with increasing Se content, and the Seebeck coefficient value is negative, showing n-type conduction. The absolute Seebeck coefficient value decreases with increasing Se content. A highest power factor, 24.5 µWcm⁻¹ K⁻², is achieved from the sample of x=1 at 369 K among the studied samples.     

High thermoelectric performance achieved in Bi0.4Sb1.6Te3 films with high (00l) orientation via magnetron sputtering

To obtain p-type Bi–Sb–Te-based thin films with excellent thermoelectric performance, the Bi_0.4Sb_1.6Te₃ target is prepared by combining mechanical alloying with the spark plasma sintering technique. Afterward, Bi_0.4Sb_1.6Te₃ thin films are deposited via magnetron sputtering at variable working pressures. With an increasing working pressure, the frequency of collisions between the argon ions and sputtered atoms gradually increases, the preferred orientation of (00l) increases, and the sputtering rate decreases. The Seebeck coefficient increases from ∼140 μV/K to ∼220 μV/K as the carrier concentration decreases along with an increasing working pressure. Furthermore, the decrease in carrier concentration and acceleration of carrier mobility also affect the change in electrical conductivity. The maximum power factor of the p-type Bi_0.4Sb_1.6Te₃ thin film deposited at 4.0 Pa and at room temperature exceeds 20.0 μW/cm K² and is higher than that of most p-type Bi–Sb–Te-based films.