在外加电场下制备ZnO纳米线

为了有效控制ZnO纳米线的生长,采用物理热蒸发法在外加电场的条件下制备ZnO纳米线.通过在沉积区引入外电场,制备出了定向生长的ZnO纳米线、纳米梳子及纳米锥.借助扫描电子显微镜、X射线能谱分析仪和透射电子显微镜以及X射线衍射仪,研究外加电场对ZnO纳米线生长的影响.与没有外加电场的情况相比,ZnO纳米线的生长方式发生了较大的改变,由一点向空间发散生长转变为沿某一方向定向生长,其平均直径约70 nm,长约12μm.结果表明,外加电场能有效控制半导体纳米线的生长,使其生长更具有方向性.     

铝修饰氧化锌纳米棒的制备及表征

研究铝(Al)修饰对氧化锌(ZnO)纳米棒的晶体结构、微观形貌和光学性能的影响。以乙酸锌和六亚甲基四胺的混合液为前驱液,采用水热法制备ZnO纳米棒,应用磁控溅射Al的方法修饰ZnO纳米棒,分别使用X射线衍射仪、扫描电子显微镜、紫外-可见分光光度计、拉曼光谱仪和荧光光谱仪对Al修饰前后ZnO纳米棒的表征分析,结果表明:ZnO纳米棒为六方纤锌矿结构、结晶度较高,且沿晶面(002)择优生长;ZnO纳米棒的尺寸均匀、平均直径约为200 nm;修饰后的ZnO纳米棒表面附着一层Al颗粒,Al颗粒能有效增强在波长380 nm～1 100 nm范围内的吸收率,同时改善了ZnO纳米棒的光致发光性能。     

棒状氧化锌纳米材料的制备及表征

分别以Zn(Ac)2.2H2O和Zn(NO3)2.6H2O为锌源,利用简易的低温液相法制备了2种不同形貌的ZnO纳米棒状结构。XRD衍射图谱表明,所得的ZnO纳米棒具有六角纤维锌矿结构;通过SEM观察可知,以Zn(Ac)2.2H2O为锌源制备的ZnO纳米棒,长度1~5μm,直径50~100 nm;以Zn(NO3)2.6H2O为锌源制备的ZnO纳米棒,长度0.5~1μm,直径40~60 nm。     

ZnO纳米阵列的水溶液法制备及其荧光特性

采用简单的低温水溶液法,在修饰有ZnO种子膜的玻片上制备出形貌规整、取向性较好的ZnO纳米棒阵列。利用场发射扫描电子显微镜(FE-SEM)、X射线衍射仪(XRD)和荧光测试仪(PL)等对产物的形貌、结构、光致发光特性进行了表征。结果表明,水热生长12 h后,能够得到均匀致密、高度取向的氧化锌纳米棒阵列,每个纳米棒直径大约为150 nm,长度为1.5μm左右。XRD结果显示,ZnO纳米棒的结构为纤锌矿结构,并沿c轴择优生长。荧光测试结果显示,所制备的ZnO纳米棒阵列在383 nm附近有一个强的紫外发射峰,同时在可见光区出现比较弱的蓝绿光发射峰。     

基片表面朝向对ZnO纳米线生长机理的影响

采用热蒸发ZnO粉末法,以金膜为催化剂,在两片表面分别朝上和朝下的Si(100)基片上生长ZnO纳米线(样品分别标为1#和2#)。X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰,说明ZnO纳米线沿(001)择优取向。通过扫描电子显微镜(SEM)表征发现,ZnO纳米线整齐排列在Si基片上,直径在100nm左右,平均长度为4mm。通过分析得出,两种基片上生长的ZnO纳米线的生长机理是不相同的:1#样品,在基片表面上先生长ZnO薄膜,再在薄膜上生长ZnO纳米线;2#样品,ZnO纳米线直接外延生长在基片表面。结果显示基片表面的朝向影响ZnO纳米线的生长机理。     

水热法制备ZnO带/ZnO线复合结构以及光催化性质研究

通过水热法制备ZnO纳米带,再通过二次生长的方法在ZnO纳米线上制备ZnO纳米线.通过扫描电镜、X射线衍射、光致发光等测试手段对样品的形貌、结构和光学性质进行表征.研究在二次生长前后光催化活性的变化,结果表明,ZnO带/ZnO线复合材料对甲基橙降解效果有明显的提高.     

纳米ZnO传感阵列对多组份气体的智能识别

采用物理热蒸发法制备纯ZnO纳米线及Al,Ag,Ni掺杂的ZnO纳米线.以纯ZnO纳米线及Al,Ag,Ni掺杂的ZnO纳米线为基料分别制成气敏传感器;利用气体敏感的差异性,构建纳米ZnO基气敏传感器阵列,结合BP人工神经网络来实现纳米ZnO基气敏元件对目标混合气体组分和相对浓度的识别.结果表明:将传感器阵列输出灵敏度值进行处理后,输入BP神经网络完成训练,能够准确识别混合气体(CO,H2,CH4)的组分与相对浓度。     

纳米ZnO粒子的溶胶凝胶制备及抗菌活性研究

采用溶胶凝胶法制备了纳米ZnO粒子,通过XRD、SEM对所制备粉体颗粒的物相组成以及表面形貌进行表征,并且通过K-B纸片扩散法研究了抗菌性能,并对比了紫外光照前后的抗菌性能.结果表明,所制备的ZnO纳米粒子粒径约为200nm左右,显示优良的抗菌活性,未经紫外光照对大肠杆菌(Escherichia coli)和金黄色葡萄球菌(Staphylococcus aureus)的抑菌圈达到18～22mm,并对其机理做了初步探讨.     

TiO2/ZnO/MMT复合光催化剂的超临界干燥法制备及性能研究

超临界流体干燥法制备的催化剂分散性好,颗粒尺寸小,对光的散射少,从而能更有效地利用光源.采用溶胶-凝胶法结合超临界流体干燥法,制备了纳米TiO2/ZnO/MMT复合光催化剂,并用TEM、XRD方法对其表征,以苯酚光催化降解为模型反应对所制备催化剂的催化性能进行了评价.结果表明催化剂平均粒径为18 nm,比表面积大,分散性好,TiO2全部为锐钛矿相;ZnO的最佳掺入量为0.5%;合光催化剂的活性高于单组分TiO2,6 h苯酚降解率达98.2%,COD化学耗氧量为94.3%.采用超临界干燥法直接制得的纳米复合催化剂,光催化活性与普通干燥法制备的光催化剂相比提高很多.     

ZnO形貌对紫外光电探测器性能的影响

ZnO作为一种新型的宽禁带半导体,在紫外光电探测领域有着重要应用价值。基于ZnO的紫外光电探测器的器件性能在很大程度上取决于ZnO的形貌调控。通过水热合成方法制备了三种形貌的纳米ZnO结构:ZnO纳米线、ZnO纳米棒、ZnO纳米颗粒,并基于三种形貌结构分别制备了紫外光探测器件,分析并探讨了影响紫外光电探测器性能的关键因素,旨在得到光响应率、响应时间、开关比最佳的ZnO形貌。结果表明,ZnO纳米线为基础的器件性能优于其他两种ZnO结构。     

Controlled growth and photoluminescence of highly oriented arrays of ZnO nanocones with different diameters

Large-scale oriented ZnO nanocone arrays were directly grown on zinc substrate through a hydro-thermal reaction of Zn foil with aqueous butylamine solution(3 mol/L) at 100—180 ℃ for 12 h.The syn-thesized products were characterized with X-ray diffraction,Raman spectrum,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the ZnO nanocones were single crystalline with the wurtzite structure and grown along the [0001] direction.The diameter of nanocones is decreased with ...     

ZnO一维纳米结构在金属基底上的原位生长和表征

以Cu—Zn合金片为基底并提供Zn源,在含氧气氛中通过调控反应温度和氧偏压,采用热氧化法直接在Cu-Zn合金片上大面积可控地合成了多种形貌的ZnO一雏纳米材料薄膜（包括纳米带、纳米片、纳米梳和纳米线等）,采用多种分析方法对产物的形貌、结构进行了详细的表征,并对其相应的生长模型进行了讨论。结果表明,反应温度和氧偏压对ZnO纳米结构的生长至关重要,随着反应温度升高或氧含量的减少,气相Zn／O物种的偏压比增加,ZnO纳米结构尺寸变小。     

电泳法制备ZnO掺杂纳米管阵列及其形貌表征

以阳极氧化铝膜为模板,采用电泳的方法,在溶液中先制备出了锌盐掺杂的前驱体,然后通过退火处理得到了ZnO:Tb3+的纳米管阵列.经扫描电镜观察该纳米管直径尺寸和管壁厚度分别为80 nm和15 nm.由XRD谱图和高分辨透射电镜分析,Tb3+离子已经进入到ZnO的晶格中并占据了Zn的格位或者位于ZnO的间隙位,最后提出了ZnO:Tb3+纳米管阵列的;形成机制.     

A facile synthesis of Ag Modified ZnO nanocrystals with enhanced photocatalytic activity

Ag modified ZnO (Ag/ZnO) nanocrystals were prepared by a facile and low temperature wet chemical method. The phase structures, morphologies, and optical properties of the as-prepared samples were characterized by X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), the Brumauer-Emmett-Teller (BET) surface area, UV-vis diffuse reflectance spectroscopy and photoluminescence (PL) spectra, respectively. The photocatalytic performance of Ag/ZnO with diffent Ag contents was measured with the degradation of methyl orange (MO) at room temperature under UV light irradiation. The experimental results indicated that the well-crystalline ZnO nanopaticles with a size of ca. 4.5 nm exhibited a high photocatalytic activity for the degradation of MO with the apparent rate constant (k) of 1.57 ×10-2 min-1, and the photocatalytic activities of ZnO were further enhanced by modification with silver. When the Ag loading was 3mol%, Ag/ZnO showed the highest photocatalytic acitivity with a k value of 5.452×10-2 min-1, which is 3.5 and 2.5 time more than that of ZnO and commercial P25, respectively.     

电化学沉积法制备一维氧化锌的研究

采用不同条件电化学沉积法在氧化铟锡（IT O ）导电玻璃基底上自组装生长了一维ZnO阵列。利用X射线衍射仪（XRD）和场发射扫描电镜（FESEM ）对其结构和形貌分别进行表征。结果表明,以种晶预生长时间为40 s的样品为衬底,Zn2＋浓度为0.005 mol/L ,CTAB浓度为0.005 mol/L ,HMT浓度为0.01 mol/L ,沉积时间为10 min ,沉积电位为0.90 V条件下,能够制备出高度取向且致密的一维氧化锌阵列。     

ZnO/TiO_2纳米复合粉体的制备及耐温性能

以TiCl4、ZnCl2 为原料 ,采用液相共沉淀法制备了ZnO/TiO2 纳米复合粉体 ,并用DSC TG、XRD、TEM技术对纳米复合粉体进行了表征。结果表明 :纳米TiO2 粉体经ZnO复合后 ,耐温性能得到显著提高 ,复合粉体经 90 0℃煅烧后 ,粒径在 2 0 30nm左右 ,TiO2 晶型完全是锐钛矿结构。     

ZnO纳米棒阵列的可控生长与表征

采用化学溶液法在沉积了ZnO种子层的SnO2:F导电玻璃衬底上,生长了ZnO纳米棒阵列。研究了1,3-丙二胺浓度对纳米棒阵列的形貌结构的影响规律。采用扫描电镜(SEM),X射线衍射(XRD)对ZnO纳米棒的表面形貌和晶格结构进行了表征。SEM结果表明纳米棒阵列垂直衬底表面生长,XRD结果表明纳米棒生长方向沿着[002]晶向,具有单晶结构。1,3-丙二胺浓度对制备得到的纳米棒形貌、长度等有明显调控作用。在优化条件下生长的ZnO纳米棒的长度大约7m,根部直径150nm,尖端直径大约10nm。研究了ZnO纳米棒阵列的光致发光(PL)特性。     

Effects of potential and temperature on the electrodeposited porous zinc oxide films

Porous ZnO films were prepared by electrodeposition method in zinc nitrate aqueous solution using ITO glass covered with polystyrene sphere (PS) colloidal crystal arrays as substrates. The preparation procedure includes two parts: deposition of ZnO in the interstices of the colloidal crystals and subsequent removal of the PS templates. The influences of deposition potential and temperature on the ZnO films were investigated. The ordered, uniform porous ZnO films with optical transmittance of approximately 63.6% at 600 nm could be obtained when the deposition potential and temperature were –1.1 V and 70 ℃, respectively. The optical band gap energy increased along with the absolute deposition potential and temperature, ranging from 3.33 to 3.43 eV and from 3.35 to 3.42 eV, respectively.     

Highly oriented ZnO rod arrays on Si substrates from aqueous solution

Ordered zinc oxide （ZnO） rod arrays with very high orientation were fabricated on Si substrates by using a solution method. The substrate surfaces were functionalized by Self-Assembly Monolayers （SAMs）. In the very early growth stage, the oriented ZnO crystals had already grown, which appeared to be the main reason why ZnO nanorods showed very high orientation. The un-dense and un-uniform SAMs provided a surface that was heterogeneous to ZnO nucleation. Consequently, highly oriented ZnO rods were selectively grown on the ＂coin-like＂ SAM-uncovered regions. The route developed here can provide some helpful information to control the nucleation and orientation of ZnO in aqueous solution. Also, the site-selective growth mechanisms can indicate a clue to grow patterned highly oriented ZnO nanorod arrays by the organic template.     

Fabrication and green emission of ZnO nanowire arrays

Well-aligned single-crystalline wurzite zinc oxide (ZnO) nanowire arrays were successfully fabricated on a Si substrate by a simple physical vapor-deposition (PVD) method at a relatively low temperature of about 500℃. The as-fabricated nanowires were preferentially arranged along the [001] direction of ZnO. The photoluminescence spectrum of ZnO nanowire arrays showed two emission bands: a strong green emission at around 500 nm and a weak ultraviolet emission at 380 nm. The strong green light emission was re...