Al2O3对3Ti/Si/2C体系自蔓延高温合成Ti3SiC2的影响

以3Ti/Si/2C粉体为原料,通过自蔓延高温合成技术合成了Ti3SiC2材料。研究了Al2O3助剂对自蔓延高温合成Ti3SiC2的影响。研究结果表明,3Ti/Si/2C粉体会发生自蔓延反应,产物的组成相为TiC、Ti3SiC2和Ti5Si3,产物中Ti3SiC2含量约为23%。添加适量的细粒度Al2O3可显著促进反应合成Ti3SiC2,3Ti/Si/2C/0.1Al2O3原料反应后得到的产物中Ti3SiC2含量达64%。     

Si对热压法制备Ti3SiC2/SiC复合材料的影响

通过热压法制备了Ti3SiC2／SiC复合材料，并通过扩散偶实验及组织观察，探讨了Si元素对热压制备Ti3SiC2／SiC复合材料的反应过程及组织的影响．结果表明，Si元素在反应过程中起主要作用，决定着反应进行的速度与方向．而且随着反应物中Si量的增加，更有利于Ti3SiC2／SiC复合材料的形成．     

Ti3SiC2的制备方法研究现状

Ti3SiC2材料兼具金属和陶瓷的性能,具有良好的导热性、导电性、自润滑性、耐磨损、高断裂韧性、高温抗氧化等优异性能,有着广阔的应用前景。本文介绍了目前Ti3SiC2材料的制备的方法及其研究现状。     

Si和Al对机械合金化合成Ti3SiC2的影响

采用3Ti／Si／2C单质粉体为原料,进行机械合金化,以合成Ti3SiC2粉体。研究了Al和过量Si对机械合金化合成Ti3SiC2的影响。研究结果表明,机械合金化单质混合粉体,会诱发自蔓延反应。反应后产生大量坚硬的颗粒状产物。机械合金化3Ti／Si／2C粉体,会产生组成相为TiC、Ti3SiC2、TiSi2和Ti5Si3的粉体与颗粒产物。添过量Si并不会促进机械合金化反应合成Ti3SiC2。添适量Al可消除硅化物,明显促进反应合成Ti3SiC2。采用3Ti／Si／2C／0．15Al粉体作原料时,颗粒产物中Ti3SiC2含量最高,为92．8wt％;而采用3Ti／Si／2C／0．20Al粉体作原料时,粉体产物中Ti3SiC2含量最高,为61．9wt％。     

层状三元碳化物Ti3SiC2及其制备研究

三元碳化物Ti3SiC2属于层状六方晶体结构，空间群为P63／mmC；它同时具有金属和陶瓷的优良性能，有良好的导电和导热能力，在室温下可切削加工，在高温下有良好的热稳定性和塑性变形能力，还具有优异的抗氧化性能，抗热震等；应用CVD、SHS、HP／HIP等方法可制备该化合物，用HIP方法能制备高纯、致密的Ti3SiC2陶瓷。最近，以元素单质粉为原料，采用放电等离子烧结工艺成功制备了高纯Ti3SiC2材料。     

放电等离子烧结含铝Ti3SiC2相的形成规律研究

用放电等离子烧结工艺以元素粉为原料制各Ti3SiC2材料时，掺入适量铝能改善Ti3SiC2的反应合成。应用X--射线衍射和扫描电子显微镜研究不同烧结温度下材料的相组成和显微结构特征。结果表明：含铝Ti3SiC2相在1100℃开始大量形成，经1150一1250℃烧结，能制备纯净致密含铝Ti3SiC2固溶体材料。铝的固溶降低了Ti3SiC2的化学热稳定性．使其分解温度降低至1300℃。     

Ti3SiC2/TiB2复合材料的制备及其组织和力学性能

以2TiC／Ti／Si／0．2Al／TiB2粉为原料，采用热压烧结工艺成功制备了Ti3SiC2／TiB2复合材料。结果表明：不同TiB2含量的试样中主晶相为Ti3siC2与TiB2两相，没有发现其它杂质相；当复合材料中TiB2的体积分数为10％时，其硬度、抗压强度、弯曲强度、断裂韧性都有显著的提高。经热处理后，Ti3SiC2／10％TiB2复合材料的弯曲强度由367．5MPa     

热压烧结Ti3SiC2材料的性能

热压烧结n(TiC)∶n(Ti)∶n(Si)∶n(Al)=2∶1∶1∶0.2的混合粉末制备了含铝Ti3SiC2材料并研究了它的力学性能、电性能、热性能和高温氧化性能。该试样的抗压强度、弯曲强度、断裂韧性和维氏硬度分别为854MPa、420MPa、5.8MPa·m1/2和3.5～5.0GPa;25℃和800℃时的电导率分别为4.3×106S/m和1.0×106S/m;热膨胀系数为9.0×10-6/K。固溶在基体中的Al改变了材料的氧化机理,氧化过程中Al的向外扩散代替了Ti的向外扩散,并在表面形成致密以αAl2O3为主要成分的氧化膜,提高了材料的抗氧化性能。     

Cu-Ti3SiC2复合材料真空热压法制备及性能研究

Ti3SiC2是一种具有MAX层状结构的先进材料,兼具金属与陶瓷的双重性能。将Ti3SiC2作为弥散强化相与Cu复合制备金属基复合材料,综合力学性能较好,有望在电接触材料中有较好的应用前景。采用热压烧结法制备Cu-Ti3SiC2复合材料,试验证明Cu-Ti3SiC2复合材料的最佳烧结工艺为:烧结温度750℃,压力30 MPa,保温30min,制得复合材料的组织均匀,团聚较少。其次研究了Ti3SiC2含量对复合材料硬度、电阻率等性能的影响,随着Ti3SiC2的体积分数的增加,硬度先增加后降低,相对密度和抗弯强度呈减小趋势,电阻率增加;通过微观显微分析,Cu-Ti3SiC2致密度随Ti3SiC2含量增加而下降。     

Synthesis of Ti3SiC2/TiB2 Composite by In-situ Hot Pressing （HP） Method

Ti3SiC2/TiB2 composite was successfully obtained by hot pressing Ti/TiC/Si/B4C power mixtures.Volume fraction of TiB2 in Ti3SiC2/TiB2 composite can not exceed 10%.Incorporation of excessive TiB2 will affect the reactions process.TiC and Ti5Si3 were two important intermediate phases during the whole reactions.The microstructure characteristics of the Ti3SiC2/TiB2 composites were analyzed using scanning electron microscopy （SEM） and transmission electron microscopy （TEM）.The experimental results show that the grains of Ti3SiC2/TiB2 composite are structured in a layered form,and the formation of TiB2 particles as reinforcements with elongated or equiaxed shape distributes in Ti3SiC2 matrix.     

Synthesis of Ti3SiC2/TiB2 Composite by In-situ Hot Pressing (HP) Method

Ti3SiC2/TiB2 composite was successfully obtained by hot pressing Ti/TiC/Si/B4C power mixtures.Volume fraction of TiB2 in Ti3SiC2/TiB2 composite can not exceed 10%.Incorporation of excessive TiB2 will affect the reactions process.TiC and Ti5Si3 were two important intermediate phases during the whole reactions.The microstructure characteristics of the Ti3SiC2/TiB2 composites were analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM).The experimental results show that the grains of Ti3SiC2/TiB2 composite are structured in a layered form,and the formation of TiB2 particles as reinforcements with elongated or equiaxed shape distributes in Ti3SiC2 matrix.     

Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation （ DFT- DVM） method. When Al element is added into Ti3 SiC2 , there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3 SiC2 , adding a proper quantity of Al can promote the formation of Ti3 SiC2 . The density of stnte shows that there is a mixed conductor character in both of Ti3 SiC2 and adding Al element. Ti3 SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.     

Electronic Structures and Bonding Properties of Ti_2AlC and Ti_3AlC_2

The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation (DFT-DVM) method. After adding Si into Ti2AlC, the interaction between Si and Ti is weaker than that between Al and Ti, and the strengths of ionic and covalent bonds decrease both. The ionic and covalent bonds in Ti3AlC2, especially in Ti-Al, are stronger than those in Ti2AlC. Therefore, in synthesis of Ti2AlC, the addition of Si enhances the Ti3AlC2 content instead of Ti2AlC. The density of state (DOS) shows that there is mixed conductor characteristic in Ti2AlC and Ti3AlC2. The DOS of Ti3AlC2 is much like that of Ti2AlC. Ti2SixAl1-xC has more obvious tendency to form a semiconductor than Ti2AlC, which is seen from the obvious difference of partial DOS between Si and Al 3p.     

Ti对SiC陶瓷GH128接头残余应力的影响

采用有限元方法对SiC／GH128和SiC／Ti／GH128高温扩散焊连接件进行了残余拉应力的有限元计算分析。结果表明：SiC／GH128不宜直接连接,在接头部位添加热膨胀系数介于SiC和GH128间的金属中间层Ti有助于显著降低SiC／GH128接头残余拉应力,促进SiC／GH128接头的形成。     

Al2O3／SiC（p）复合陶瓷力学性能研究

利用压痕强度技术系统研究了引入纳米、亚微米和微米粒径的ＳｉＣ颗粒对Ａｌ２Ｏ３陶瓷力学性能的影响．实验结果表明，微米级ＳｉＣ颗粒具有相对较好的增韧作用，纳米级ＳｉＣ颗粒具有相对较好的增强作用．复合陶瓷试样的断裂韧性受残余热应力和裂纹偏折作用共同影响．ＳｉＣ颗粒引入可以改善复合陶瓷表面抛光质量，减小缺陷尺寸，从而提高了试样的强度．