空穴传输层厚度对OLED性能的影响

该文采用聚乙烯基咔唑(PVK)作为空穴传输层,8-羟基喹啉铝(Alq3)作为发光层,制备了结构为ITO/PVK (0~60nm)/Alq3(60 nm)/Mg:Ag/Al的有机发光二极管。通过测试器件的电流-电压-发光亮度特性,研究了空穴传输层厚度对有机发光二极管器件性能的影响,优化了器件功能层的厚度匹配。实验结果表明,有机发光二极管的光电性能与空穴传输层的厚度密切相关,当空穴传输层厚度为15 nm时,有机发光二极管器件具有最低的起亮电压、最高的发光亮度和最大的发光效率。     

TPBTSi配合物的绿色有机发光器件研究

利用2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi)作为发光材料,采用真空镀膜的方法制备双层器件ITO/N,bis (1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB)/TPBTSi/Mg:Ag;在此基础上,利用N'-diphenyl-N,N'-tri-(8-hydroxyquinoline) aluminum (Alq3)作为电子传输材料,以TPBTSi为发光层制备了结构为ITO/NPB/TPBTSi/Alq3/Mg:Ag的三层有机发光器件。结果表明,与双层器件相比,三层器件的发光性能得到很大提高,发光光谱谱峰位于516 nm处,即TPBTSi的特征光谱,CIE坐标为(0.275,0.448),且不随电压的改变而变化。在15 V的驱动电压下,器件的最大亮度和流明效率分别为7 032 cd/m2和0.79 lm/W。     

Spiro发光双层结构有机电致发光器件

为了研究简单结构有机电致发光器件的发光性能，采用PEDOT：PSS作为空穴输运层，Spire作为电子输运层和发光层，以金属Ba覆盖以金属AI作阴极，制备双层结构有机电致发光器件，得到性能稳定的蓝色发光。测量器件的电流密度-电压特性、发光亮度-电压特性和电致发光谱，计算了器件的外量子效率。结果表明，器件电流以陷阱电荷限制电流为主，最大发光亮度为3544cd/m2，最大外量子效率达2．40％。     

Spiro发光双层结构有机电致发光器件

为了研究简单结构有机电致发光器件的发光性能,采用PEDOT∶PSS作为空穴输运层,Spiro作为电子输运层和发光层,以金属Ba覆盖以金属Al作阴极,制备双层结构有机电致发光器件,得到性能稳定的蓝色发光。测量器件的电流密度-电压特性、发光亮度-电压特性和电致发光谱,计算了器件的外量子效率。结果表明,器件电流以陷阱电荷限制电流为主,最大发光亮度为3544cd/m2,最大外量子效率达2.40%。     

高亮度LCD平板背光源的制备及性能研究

为进一步提高内部无电极型LCD平板背光源的发光亮度及其使用寿命,制备了一种利用固体ITO导电薄膜为导电介质的等离子体激发发光平板背光源.这种电光源由两片平板玻璃中间充入纯氙气(气压2.66 104Pa)密封而成,光源内表面上均匀涂敷一层荧光粉,在玻璃板的外表面上用透明导电胶粘上一层ITO(氧化铟锡)导电薄膜作为导电介质,以1.1mm厚的玻璃板作为介质阻挡放电层,在高频交变电压的作用下产生等离子体,激发荧光粉发光.最大发光亮度可达5 000 cd/m2,可持续发光5 000 h,最佳激发频率10.0 kHz,发光均匀度大于92%.     

ITO/NPB/Alq_3/LiF/Al电致发光器件光电特性

针对有机电致发光器件发光效率低、稳定性差的问题,设计制备了ITO/NPB/Alq3/LiF/Al多层有机电致发光器件.测试了器件的电流电压特性、器件的亮度电压特性、器件的电致发光光谱.结果表明,当外加电压为16V时,器件的电流达到最大值21.70mA,器件的亮度达到了11 700cd/m2;当外加电压为14 V时,电致发光光谱波峰位于528 nm处,归一化强度最大值为0.522 1a.u.制备的器件电子注入能力、电流和亮度均得到了增强.     

FTO上溅射ITO薄膜及光电性能

通过脉冲磁控溅射法在掺氟氧化锡透明导电薄膜(FTO)基底上制备了氧化铟锡(ITO)透明导电薄膜。研究了溅射时间和衬底温度对FTO基底上制备的ITO薄膜的光透过率和电性能的影响。采用SZT-2四探针测试仪测量样品表面的电阻,用扫描电镜(SEM)对样品进行表征。结果表明,随着溅射时间的增加以及衬底温度的升高,以FTO导电薄膜为基底制备的氧化铟锡(ITO)透明导电膜的电阻逐渐减小,而后基本保持不变。在基片温度为400℃、溅射时间为45min时,方块电阻最小值达到1.5Ω。     

氧气气氛下退火处理对ITO薄膜性能的影响

采用AFM,XPS,Hall等手段分析了氧气气氛下退火处理对ITO薄膜性质的影响,并用处理的ITO制作了有机电致发光器件.结果表明,退火处理后ITO薄膜的表面粗糙度增加,光学透过率降低.ITO薄膜经0.5 h退火后电阻率增大了近2倍,对有机半导体材料的空穴注入能力显著提高,相应的有机发光器件性能得到明显改善.ITO薄膜光电性能的变化归因于ITO表面化学组分的改变.     

锡掺杂氧化锌薄膜乙醇气敏性的研究

以载玻片为基片,依次采用溶胶凝胶、浸渍提拉和热处理方法制备掺杂锡的氧化锌薄膜气敏材料.分别采用红外光谱对氧化锌溶胶体系进行表征;扫描电子显微镜(SEM)观察氧化锌薄膜的表面形貌;主要利用电化学工作站测量极限电流与乙醇气体浓度的关系,研究掺杂氧化锡的氧化锌薄膜在常温下的乙醇气敏性能.结果表明:所成溶胶体系稳定;10层锡掺杂氧化锌薄膜晶型较完整,排列有序,在常温条件下乙醇气体含量为0～500μL/L时,极限电流与气体浓度呈现较好的线性关系;在乙醇气体含量为500μL/L时,灵敏度可高达82.39.     

底发射OLED中阳极形状对器件性能的影响

通过改变有机电致发光显示器件的阳极形状,制备了三种具有不同表面状态及形状阳极的器件,对它们的电流-电压、亮度、电流效率等特性进行了测试和分析．结果表明,阳极出光侧采用凹凸结构、且A1膜连续、致密,器件的亮度和电流效率相比于传统器件分别增加了40％和10oA．当阳极薄膜制备于凹凸面上时,器件性能较差．分析了三种器件性能差距较大的原因．     

Influence of different substrates on the electrochromic property of polyaniline films

The polyaniline (PANI) films doped with complex acid (sulfuric acid and sulfosalicylic acid) were prepared using the potentiostatic method on bare nickel flake (NF) and flexible polyethylene terephthalate (PET)/indium tin oxide (ITO) substrates. The contents of the PANI films, surface elements, electrochromic property and electrical conductivity were characterized by energy dispersive X-ray spectrometer (EDS), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The experimental results show that differences exist among cycle stability, redox reversibility and response time of polyaniline films on these two kinds of substrates, but the electrochromic phenomenon of the PANI films is in substantial agreement. The equilibrium transmittance spectra in the visible region (400–800 nm) for the PANI film on flexible PET/ITO substrate was obtained at different applied potential from −0.4 to 1.5 V. The results show that the transmittance of the PANI film by applying voltage is adjustable in a row and has excellent electrochromic performance.     

一种基于液晶性质的Pt配合物磷光材料电致发光器件

采用聚合物掺杂的方式,利用旋涂工艺制备了ITO/PVK:TOPPt/BCP(20 nm)/Mg:Ag(200 nm)结构的有机电致发光器件(OLED)。对掺杂浓度为2%(器件A)和4%(器件B)的磷光聚合物掺杂体系的光致发光(PL)和电致发光(EL)性质进行了分析研究,并对主体材料PVK到磷光客体材料TOPPPt的能量传递机制进行了讨论。实验表明,器件的EL谱谱峰位于625 nm,器件A在25 V时最大亮度为3037 cd/m2,最大电流效率为3.15cd/A。器件的EL谱不会随着偏置电压和掺杂浓度而改变,器件具有较好的稳定性。     

Effect of Change in Thickness of Ag Toplayer on the Structure and Magnetic Properties of FePd Films Grown on Glass Substrate

A series of FePd based alloy films were deposited on glass substrates by DC magnetron sputtering. The Ag toplayer effect was studied using FePd(67.5 nm)/Ag(3.875, 7.75, 15.50, 31 and 38.75 nm) films annealed at 600 ℃ for different time in order to find the role of the Ag toplayer in disorder-order of FePd film. The results show that the Ag toplayer can accelerate the phase transition from FCC to FCT in films. The magnetic easy axis of the crystallites in this film is in-plane of substrate. The Ag toplayer can greatly enhance the coercive of FePd films. When the thickness of Ag is equal to 31 nm, the film has a very large in-plane coercivity of 2.8 kOe and a very low out-of-plane coercivity of 1.04 kOe.     

NPB层嵌入MgF_2超薄层对OLED性能的影响

将MgF2超薄层嵌入有机电致发光器件(OLED)的空穴传输层NPB中,制备了结构为ITO/NPB(10nm)/MgF2(xnm)/NPB(20nm)/Alq3(30nm)/Al(30nm)的一系列OLED。测试结果表明,合适厚度的MgF2可有效降低器件启亮电压,提高器件的发光效率。MgF2厚度为0.5nm的器件启亮电压只有2.3V,较未嵌入MgF2器件降低2V;MgF2厚度为1.0nm的器件最大电流效率达到3.93cd/A,最大光功率效率达到1.58lm/W,较未嵌入MgF2器件分别提高95%和110%。     

Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.     

使用AlQ的高效率红色有机电致发光器件

以8-羟基喹林铝(AlQ)为主体材料,通过4(Dicyanomethylen)-2-methyl-6-(P-dimethylaminostyryl)-4H-pyran (DCM)红色发光材料的掺杂,制备了AlQ:Rubrene:DCM体系的高效率、高亮度的红色电致发光器件。器件结构为ITO/N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB)/AlQ:Rubrene (3%):DCM (3%)/AlQ/Mg:Ag/Al,亮度为4 330 cd/m2,色坐标为(0.51,0.44),最大流明效率为6.77 lm/W。     

Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

1Introduction Indiumtinoxide(ITO)isadegeneraten typesemi conductingmaterialthathaswideapplicationsinoptics andoptoelectronics,suchasflatpaneldisplaydevices,antireflectioncoatings,pilotwindows,andheterojunction solarcells.Itselectricalopticalpropertieshave…     

Highly efficient green organic light-emitting devices based on terbium complex by employing hole block material as host

In this work,efficient green electroluminescent(EL)devices with simplified device structure were prepared by doping trivalent terbium complex Tb(PMIP)_3into hole block material Tm Py PB.The high triplet energy of Tm Py PB helps to confine excitons within light-emitting layer,while the electron transport characteristic of Tm Py PB facilitates the balance of carriers on Tb(PMIP)_3molecules.By optimizing the doping concentration of Tb(PMIP)_3and the thickness of each functional layer,highly efficient green EL device with the structure of ITO/Mo O_3(3 nm)/TAPC(50 nm)/Tb(PMIP)_3(30 wt%):Tm Py PB(25 nm)/Tm Py PB(60 nm)/Li F(1 nm)/Al(100 nm)displayed pure Tb~(3+)characteristic emission with maximum current efficiency,power efficiency and brightness up to 47.24 cd/A(external quantum efficiency(EQE)of 14.4%),43.63 lm/W and 1694 cd/m~2,respectively.At certain brightness of 100 cd/m~2,the device still maintained a current efficiency of 19.96 cd/A(EQE=6.1%).Such a device design strategy helps to improve the EL performances of Tb(PMIP)_3and to simplify device fabrication processes,thus reduce the fabrication cost.