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1.
The structural, dielectric and piezoelectric properties of (1-x)(Bi1/2Na1/2) TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary (MPB) of (1-x)(Bi1/2Na12) TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃: rhombohedral (or rhombohedral plus tetragonal) ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for ( 1-x)(Bi1/2Na1/2)TiO3-xBaTiO3.  相似文献   

2.
纳米Na0.5Bi0.5TiO3粉体的水热合成研究   总被引:3,自引:0,他引:3  
以Bi(NO3)3·5H2O、Ti(OC4H9)4为原料,研究和分析了水热条件下Na0.5Bi0.5TiO3(BNT)晶体生长和形成的影响因素.结果表明,在反应温度为160~180℃,保温时间为4~16h,NaOH浓度为4~12mol/L的条件下可制备出高纯度的纳米Na0.5Bi0.5TiO3粉体,其颗粒尺寸约为15~60nm.  相似文献   

3.
针对目前无铅压电陶瓷的压电常数d33偏小的情况,采用传统的烧结方法制备了(Na0.5K0.5)NbO3基无铅压电陶瓷(Na0.5K0.45Li0.05)Nb0.95-xSbxTa0.05O3(x=0.03,0.06,0.09,0.12),研究了在Li和Ta含量固定的情况下,Sb元素的添加量和烧结温度对陶瓷的压电常数的影响.研究结果表明,适量Sb元素的掺杂可以大幅度提高陶瓷的压电常数d33,陶瓷样品的压电常数d33随着Sb含量的增加先增大后减小.烧结温度可以影响陶瓷的密度,进而影响其压电常数.在1130℃的最佳烧结温度下,Sb含量x=0.09时,陶瓷样品表现出最佳的压电性能,压电常数d33=328 pC/N.  相似文献   

4.
针对目前无铅压电陶瓷的压电常数d33偏小的情况,采用传统的固相反应烧结方法制备得到了高压电性能的Bi0.5Na0.5TiO3基无铅压电陶瓷Bi0.5(Na0.7K0.3-xLix)0.5TiO3(x=0.04,0.08,0.12,0.16,0.20),研究了Li元素的添加量对陶瓷的烧结温度以及压电性能的影响.研究结果表明,Li元素对K的替代可以降低陶瓷的烧结温度,提高样品致密度,适量的Li可以大幅度提高陶瓷的压电性能.陶瓷样品的压电常数d33和平面机电耦合系数kp随着Li含量的增加先增大后减小,在1 090 ℃的烧结温度下,Li含量x=0.08时的陶瓷样品表现出最佳的压电性能,压电常数d33=212 pC/N,平面机电耦合系数kp=33%.  相似文献   

5.
采用传统固相烧结法和二次烧结工艺制备了xBi(Mg0.5Ti0.5)O3-0.95K0.5Na0.5NbO3-0.05LiSbO3(xBMT-KNN-LS)无铅压电陶瓷,研究了二次烧结工艺对xBMT-KNN-LS陶瓷性能的影响。结果表明:采用传统的陶瓷烧结工艺所得到的性能为压电常数d33=220 pC/N、平面机电耦合系数kp=39.6%、介电损耗tanδ=6.38%。而采用二次陶瓷烧结工艺得到的最佳性能为d33=254 pC/N、kp=37.8%、tanδ=4.81%,因此,二次烧结对该体系的压电性能有显著的影响。  相似文献   

6.
碱金属离子对二元锗酸盐玻璃结构的影响   总被引:1,自引:0,他引:1  
基于拉曼光谱、红外光谱、密度测试分析了不同的碱金属氧化物对二元碱金属锗酸盐玻璃红外拉曼光谱的影响。结果表明:1)Li+,Na+,K+对xR2O-(1-x)GeO2(R=Li、Na、K)玻璃的红外光谱的影响规律相同:高频区吸收峰700~900 cm-1随R+含量的增加逐渐向低频移动,低频区吸收峰500~700 cm-1逐渐向高频移动,但是当R+含量足够大时转而向低频移动;Rb+,Cs+对xR2O-(1-x)GeO2(R=Rb、Cs)玻璃红外光谱的影响相同:高频区吸收峰700~900 cm-1随R+含量的增加向低频移动,低频区吸收峰500~700 cm-1以锗反常点附近为中心先升高后降低。2)从xR2O-(1-x)GeO2(R=Li、Na、K)玻璃拉曼光谱可以看出,当R2O的量分别达到其对应的锗反常点时,网络结构中仍然存在[GeO4]六元环。而在xR2O-(1-x)GeO2(R=Rb、Cs)玻璃拉曼光谱中,在锗反常点时,435 cm-1散射峰完全消失,表明网络结构中已不存在[GeO4]六元环。继续增加R2O的量,Ge—O—Ge键的弯曲振动开始显示拉曼活性。3)xR2O-(1-x)GeO2(R=Li、Na、K)体系...  相似文献   

7.
A new group of lead-free piezoelectric ceramics,(Bi0.5 Na0.5)1-x(BaaSrb)xTiO3(abbreviated as BNBST[100x-100a/100b],0〈x〈1,a+b=1),was synthesized.The ceramics were prepared by conventional ceramic sintering technique,and the ceramics with density of 95% of the theoretical one can be sintered without the atmosphere control during the sintering process.The results of the X-ray diffraction(XRD) data show that the ceramics possess a single perovskite phase.The measurements of dielectric and piezoelectric properties reveal that the ceramics provide relatively high piezoelectric charge constant d33 and high planar electromechanical coupling factor kp.For the BNBST6-95/5 ceramics,d33 is equal to 170pC/N,and kp is equal to 32.0%.The fabrication technique for these ceramics is conventional and stable.  相似文献   

8.
Lead-free piezoelectric (K0.5sNa0.5)1-xLixNbO3 (x = 0at%-20at%) ceramics were synthesized by spark plasma sintering (SPS) at low temperature and the effects of LiNbO3 addition on its crystal structure and properties were also studied. When the Li content was less than 6at%, a single proveskite phase with the similar structure of (K0.5Na0.5)NbO3 was formed; and a secondary phase with K3Li2Nb5O15 structure was observed in the 6at% 〈 x 〈 20at% compositional range. Furthermore, LiNbO3 existed as the third phase when the Li content was higher than 8at%. The grain sizes increased from 200-500 nm to 5-8 μm when the K3Li2Nb5O15 and LiNbO3 like phases were formed. With increasing Li content, the relative density of the ceramics first decreased from 97% to 93% and then kept constant. The piezoelectric coefficient d33, dielectric constant, and planner electromechanical coupling factor exhibited a decreasing tendency with increasing Li content because of the decrease in density and the formation of the secondary phase such as K3Li2Nb5O15 and LiNbO3. The formation of dense microstructure with a single phase is necessary in improving the properties of the (K0.5Na0.5)1-xLixNbO3 ceramics.  相似文献   

9.
综述了(Bi1/2Na1/2)1-xBaxTiO3系无铅压电陶瓷的最新研究进展。简述了A位非化学计量改性及几种较成功的掺杂改性方法。将A位掺杂(如La3+)、B位掺杂(如Co3+、Nb5+)以及综合掺杂(如Ce3+、Ce4+)的优缺点和掺杂机理进行了归类比较。解释了各系统中相应掺杂引起性能变化的原因,为进一步开展无铅压电陶瓷的研究提供参考。  相似文献   

10.
Ce4+及La3+掺杂对(Bi0.5Na0.5) Ba0.06TiO3 陶瓷压电性能的影响   总被引:1,自引:0,他引:1  
采用固相法制备工艺制备了质量分数CeO2(0-0.6%)和La2O3(0-1.3%)掺杂的(Bi0.5Na0.5)0.94Ba0.06TiO3(BNBT6)无铅压电陶瓷.研究了合成产物的晶体结构、压电性能以及压电常数温度稳定系数.结果表明:所有组成均呈三方结构的钙钛矿型固溶体特征;当CeO2掺杂量为质量分数0.4%、La2O3掺杂量为质量分数1.0%时,陶瓷具有较好的压电性能,与纯BNBT6相比,分别提高了12%和15%;2种掺杂离子均能够改善陶瓷材料压电性能的温度稳定性.  相似文献   

11.
MgO-modified Li0.06(Na0.5K0.5)0.94NbO3(L6NKN) lead-free piezoelectric ceramics were synthesized by normal sintering at a relatively low temperature of 1000°C.The crystalline phase,microstructure,and electrical properties of the ceramics were investigated with a special emphasis on the influence of MgO content.The addition of MgO effectively improves the sinterability of the L6NKN ceramics.X-ray diffraction analysis indicates that the morphotropic phase boundary(MPB) separating orthorhombic and tetragonal ph...  相似文献   

12.
采用X射线衍射(XRD)、拉曼光谱(RS)、电子顺磁共振(EPR)、扫描电子显微镜(SEM)和介电测试技术研究(Ba1-3x/2CexCax/2)Ti1-x/4O3陶瓷的结构及介电性能.结果表明:随掺杂量x增加,发生四方-立方结构转变,以45°附近两个分立的(002)/(200)衍射峰演变为单一对称的(200)衍射峰为标志;(Ba1-3x/2CexCax/2)Ti1-x/4O3陶瓷显示一级相变(FPT)的介电行为,具有较高的介电常数和低介电损耗(tanδ0.04).  相似文献   

13.
采用传统的固相烧结法于1120℃烧结2 h得到(0.82-x)Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3(x=0.01-0.07)无铅压电陶瓷,并对该体系陶瓷的微观结构和电学性能进行了研究。结果表明,BiFeO3的引入量x为0.01-0.07时,样品均为具有MPB准同型相界(三方相和四方相共存)的钙钛矿结构。BiFeO3的引入使陶瓷的晶粒度略有增加;当x=0.03时,样品达到最大致密度。为97.7%;陶瓷的压电常数d33随BiFeO3的引入而降低。陶瓷的相对介电常数εr和居里温度随BiFeO3的引入而明显增大,在x=0.03时达到最大值。  相似文献   

14.
以xPMnS-(1-x)PZN四元系压电陶瓷为研究对象,通过研究Zn1/3Nb2/3含量的变化对0.5PMnS-0.5aPZN材料结构与性能的影响,获得具有高压电活性的0.5PMnS-0.5aPZN陶瓷材料。结果表明,四方相结构的0.5PMnS-0.5aPZN材料压电活性优于三方相结构,性能最好的组成位于MPB(四方相边界)附近靠近四方相含量较高的区域,组成Zn1/3Nb2/3含量的变化影响了MPB的位置。  相似文献   

15.
Bi0.5Na0.5TiO3系无铅压电陶瓷的研究   总被引:5,自引:0,他引:5  
概述了Bi0.5Na0.5TiO3(BNT)基无铅压电陶瓷的研究近况。第二组元化合物的加入能使BNT陶瓷的矫顽场降低,使BNT基陶瓷的压电性能得到了提高。根据BNT基无铅压电陶瓷的A位和B位原子的原子量、离子半径和电负性,研究了BNT基压电陶瓷的性能与这些参数的关系。  相似文献   

16.
(Bi1/2Na1/2)1-xBaxTiO3系无铅压电陶瓷的现状   总被引:1,自引:0,他引:1  
综述了(Bi1/2Na1/2)1-xBaxTiO3系无铅压电陶瓷的最新研究进展。简述了A位非化学计量改性及几种较成功的掺杂改性方法。将A位掺杂(如La^3 )、B位掺杂(如Co^3 、Nb^5 )以及综合掺杂(如Ce^3 、Ce^4 )的优缺点和掺杂机理进行了归类比较。解释了各系统中相应掺杂引起性能变化的原因,为进一步开展无铅压电陶瓷的研究提供参考。  相似文献   

17.
Piezoelectric ceramics (Na0.5Bi0.5)0.92Ba0.05TiO3 x%MnCO3(BNBT-Mn, x=0-1.6,mass fraction)were synthesized by conventional solid state reaction. The results show that when the addition of MnCO3 is 0-1.4%, BNBT-Mn ceramics exhibit a single-phase perovskite structure. With the increase of content of MnCO3, piezoelectric constant and electromechanical coupling factor increase rapidly when x is lower than 0.3. Then they both decrease when x is in the range of 0.3 and 1.6. When x=0.3, piezoelectric constant and electromechanical coupling factor reach the maximum value of 160 pC/N and 58.5% respectively, which can improve the temperature stability of BNBT-Mn.  相似文献   

18.
为了抑制K_(0.5)Bi_(0.5)TiO_3的退极化现象,提高铁电性能,以K_2CO_3、TiO_2、Bi_2O_3及ZnO为原料,通过二步固相法合成无铅铁电复合陶瓷K_(0.5)Bi_(0.5)TiO_3:ZnO(KBT:ZnO).通过X射线衍射、扫描电子显微镜、铁电和介电测试分析了复合陶瓷的微观结构和介电行为.结果表明:KBT中引入20%(物质的量百分数)的ZnO后,复合陶瓷中生成了第三相Zn2TiO_4,同时,KBT的极化能力及其铁电行为得到改善.阻抗测试表明复合铁电陶瓷内部只存在一种导电机制,即电子电导.特别是ZnO的引入抑制了KBT由正常铁电体向弛豫铁电体的相转变,对KBT的应用和研究有着重要的作用.  相似文献   

19.
利用短时研磨(粗磨,2 h)和长时研磨(细磨,48 h)两种不同的研磨工艺并结合B位复合陶瓷制备的一步法工艺流程,制备并研究了铅基钙钛矿弛豫铁电陶瓷(1-x)Pb(Ta0.5Sc0.5)O3-xPb(Zr0.52Ti0.48)O3(0.1≤x≤0.5)(PSTZT)。由细磨工艺制备的陶瓷在1 200℃下烧结2 h获得了纯钙钛矿相;细磨工艺PSTZT陶瓷表面平整、晶粒细小、致密性高,其介电与压电性能、热释电性能等全面优于粗磨工艺陶瓷。  相似文献   

20.
Zn1/3Nb2/3含量对xPMnS-(1-x)PZN性能的影响   总被引:1,自引:0,他引:1  
以xPMnS-(1-x)PZN 四元系压电陶瓷为研究对象,通过研究Zn1/3Nb2/3含量的变化对0.5PMnS-0.5aPZN材料结构与性能的影响,获得具有高压电活性的0.5PMnS-0.5aPZN陶瓷材料.结果表明,四方相结构的0.5PMnS-0.5aPZN材料压电活性优于三方相结构,性能最好的组成位于MPB(四方相边界)附近靠近四方相含量较高的区域,组成Zn1/3Nb2/3含量的变化影响了MPB的位置.  相似文献   

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