High-power VCSELs: single devices and densely packed 2-D-arrays

We report on vertical-cavity surface-emitting lasers (VCSELs) and laser arrays providing high output powers in the 980-nm wavelength regime. Extensive investigations on size scaling behavior of single top- and bottom-emitting devices concerning fundamental electrooptical and thermal properties show limits of attainable output characteristics. Maximum experimentally achieved continuous-wave (CW) optical output powers at room temperature are 180 and 350 mW for top- and bottom-emitting VCSELs, respectively. Detailed analysis on the thermal interaction between closely spaced elements have been carried out to describe the thermally induced power limitations of two-dimensional arrays. Fabricated heat sunk bottom-emitting arrays of 23 elements and 40-μm aperture size of individual elements show output powers of 0.56 W CW at room temperature and 0.8 W actively cooled, resulting in 0.33 kW/cm² and 0.47 kW/cm² maximum spatially averaged optical power density, respectively     

Analysis of 6-nm AlGaAs SQW low-confinement laser structures forvery high-power operation

This paper reports experimental results on single quantum-well separate confinement heterostructures (SQW SCH) with low-confinement factor, designed for very high-power operation. The maximum power output for AR/HR coated 3-mm-long devices, measured in very short pulsed conditions (100 ns/1 kHz), from 10-μm-wide stripes was as high as 6.4 W before catastrophic optical degradation. If scaled to continuous-wave (CW) conditions, this value would be 800-1100 MW, which would mean a factor of 22.7 times more than reported for the best devices with normal design for threshold minimization. The absorption coefficient for the symmetrical structure is as low as 1.1 cm^-1, in spite of the low trapping efficiency of carriers in the quantum well (QW). The maximum differential efficiency is 40% (both faces, uncoated devices) for symmetrical structure and 33% for the asymmetrical one (all measurements in pulsed conditions). Threshold current densities were 800 A/cm² for 5-mm-long devices in the symmetrical case and 2200 A/cm² in the asymmetrical one. The effects of inefficient carrier trapping in the QW on the threshold current densities and differential efficiency are discussed     

High-power and high-efficiency operation of a CW-diode-side-pumpedNd:YAG rod laser

We have demonstrated high-power and high efficiency performance of a continuous-wave (CW) Nd:YAG laser with a simple and scalable side-pumping configuration. The maximum output power of 147 W was obtained in low brightness operation of M²=45. The corresponding electric efficiency is 14.8%. To our knowledge, this is the highest value reported for diode side-pumped Nd:YAG lasers. By using a rate and photon transport calculation, we have estimated the pumping efficiency of 72%. High brightness operation was also carried out by applying bifocusing compensation of the Nd:YAG rod. The brightness of 272 MW/cm² sr with beam quality of M²=5.9 and output power of 107 W was obtained at the electric efficiency of 11.6%. The brightness and the electric efficiency are comparable with those of industrial high-power CO₂ lasers that have been the first option for industrial applications     

Highly strained GaInAs-GaAs quantum-well vertical-cavitysurface-emitting laser on GaAs (311)B substrate for stable polarizationoperation

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 μm emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 μm on GaAs (311)B substrate for the first time. The 1.15-μm edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm². The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 μm, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170°C without a heat sink was achieved     

Design and analysis of single-mode oxidized VCSELs for high-speedoptical interconnects

Oxide-confined vertical-cavity surface-emitting laser diodes (VCSELs) are fabricated for applications in high-performance optical interconnects. Both 980-nm as well as 850-nm wavelength devices in one- and two-dimensional arrays are investigated. Noise properties of single- and multimode devices under different operation conditions are relative intensity noise of single-mode devices can be as low as -150 dB/Hz at output powers of about 1 mW and feedback levels up to -30 dB. Data rates up to 12.5 Gb/s with bit error rates below 10^-11 are achieved with VCSELs showing stable single-mode emission at large-signal modulation, combined with modulation bandwidths exceeding 10 GHz. Arrays with 4×8 elements flip-chip mounted on Si CMOS driver chips ready for use in parallel data transmission systems are presented     

Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAsquantum-dot lasers

The understanding of material quality and luminescence characteristics of InGaAs-GaAs quantum dots (QD's) is advancing rapidly. Intense work in this area has been stimulated by the recent demonstration of lasing from a QD active region at the technologically important 1.3-μm wavelength from a GaAs-based heterostructure laser. Already, several groups have achieved low-threshold currents and current densities at room temperature from In(Ga)As QD active regions that emit at or close to 1.3 μm. In this paper, we discuss crystal growth, QD emission efficiency, and low-threshold lasing characteristics for 1.3-μm InGaAs-GaAs QD active regions grown using submonolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low-threshold current of 1.2 mA and threshold-current density of 19 A/cm² under continuous-wave (CW) room temperature (RT) operation. At 4 K, a remarkably low threshold-current density of 6 A/cm² is obtained     

InGaN-based blue laser diodes

The continuous-wave (CW) operation of InGaN multiquantum-well (MQW) structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 100 h. The threshold current and the voltage of the LDs were 50 mA and 5 V, respectively. The threshold current density was 8.8 kA/cm². The carrier lifetime and the threshold carrier density were estimated to be 3.5 ns and 1.8×10²⁰/cm³, respectively. The Stokes shift of the energy difference between the absorption and the emission energy of the InGaN MQW LD's were 140 meV. Both spontaneous and stimulated emission of the LD's originated from this deep localized energy state which is equivalent to a quantum dot-like state. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10^-17 cm², 9.3×10 ¹⁹ cm^-3, 5200 cm^-1, and 43 cm^-1 respectively     

Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition

In this study, high-quality ZnO thin films were grown on sapphire substrates by atomic layer deposition (ALD), followed by high-temperature postdeposition annealing. A thin Al₂O₃ layer was subsequently deposited by ALD on the ZnO surface to reduce detrimental surface states. Photoluminescence measurements conducted in a backscattering configuration at room temperature show that the ZnO film exhibited stimulated emission with a low threshold intensity of 35.1 kW/ cm². This may be attributed to the high-quality ZnO film and Al₂O₃ surface passivation layer grown by ALD, as well as the Al doping effect caused by the thermal diffusion of Al from the sapphire into the ZnO. Results show that ZnO films grown by the ALD technique are applicable to next-generation short-wavelength photonic devices.     

Continuous-wave broadly tunable intracavity frequency-doubled Cr4+: forsterite laser

Continuous-wave (CW) power performance of a room-temperature, broadly tunable intracavity frequency-doubled Cr⁴⁺: forsterite laser is described. Intracavity doubling was achieved by using a 2-cm-long periodically poled lithium niobate (PPLN) crystal. At the PPLN crystal temperature of 188°C, orange-red radiation could be obtained between 613 and 655 nm by using gratings with different poling periods. Experimentally measured temperature tuning data of the PPLN crystal was further found to be in very good agreement with theoretical predictions based on temperature-dependent Sellmeier data. With an incident pump power of 6.8 W at 1064 nm, the Cr⁴⁺: forsterite laser produced 245 mW of CW output power at 1260 nm and intracavity doubling yielded 45 mW of second harmonic output at 630 nm     

Power Scaling of Ytterbium-doped Fiber Superfluorescent Sources

Power scaling of ytterbium-doped fiber superfluorescent sources based on single-stage and two-stage cladding-pumped fiber configurations is reported. For the single-stage configuration, a novel fiber-end termination scheme was employed to suppress laser oscillation in combination with a simple all-fiber scheme for achieving a predominantly single-ended output. The fiber was cladding-pumped by a diode stack at 976 nm and yielded ~62 W of single-ended amplified spontaneous emission output for 119 W of launched pump power, limited by the onset of parasitic lasing. At pump powers in excess of 40 W, the slope efficiency with respect to the launched pump power was 67%. The emission spectrum spanned the wavelength range from 1030 to 1100 nm and the bandwidth (FWHM) was 12 nm. Scaling to higher power levels was demonstrated using a two-stage cladding-pumped fiber configuration comprising of a low-power fiber superfluorescent seed source and a high-power amplifier. The two-stage source yielded 122 W of amplified spontaneous emission output (limited by available pump power) in a beam with M² ap 2.1. The slope efficiency for the amplifier with respect to the launched pump power was 77%. The prospects for further improvement in performance and output power are considered.     

Infrared microscopy studies on high-power InGaAs-GaAs-InGaP laserswith Ga2O3 facet coatings

InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (λ=0.98 μm) with lattice-matched InGaP cladding layers, using a new Ga₂O₃ low reflectivity (LR) front-facet coating, are reported. The CW peak power density (17 MW/cm²) of 6 μm×750 μm ridge-waveguide lasers is limited by thermal rollover, and repeated cycling beyond thermal rollover produced no change in operating characteristics. The high-power temperature distribution along the active stripe has been measured by high-resolution infrared (3-5 μm) imaging microscopy. The temperature profile acquired for a very high optical power density P_D=11 MW/cm³ was found to be uniform along the inner active laser stripe, and revealed a local temperature increase at the LR front facet ΔT_f of only 9 K above the average stripe temperature ΔT_s=24 K. An excellent front-facet interface recombination velocity <10⁵ cm/s has been inferred from the measured low local temperature rise in the front facet     

Room-temperature lasing operation of GaInNAs-GaAssingle-quantum-well laser diodes

We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes at room temperature (RT). The threshold current density was about 1.4 kA/cm², and the operating wavelength was approximately 1.18 μm for a broad-stripe geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum. The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5° and 45°, respectively. A high characteristic temperature (T₀) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/°C under pulsed operation were obtained. These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance     

Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers

We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a laser head designed to be part of a master oscillator power amplifier (MOPA) operating at 3 kW. We summarize why the diode-pumped Yb:YAG crystal laser is ideal for scaling to high average powers and the different approaches being pursued. We also report our latest results for side-pumped rod devices     

Continuous-Wave (CW) operation of GaInP-AlGaInP visiblecompressively strained multiple quantum-wire (CS-WQWR) lasers

GaInP-AlGaInP compressively strained multiple quantum-wire layers were fabricated by the in situ strain induced lateral layer ordering process, during gas source molecular beam epitaxial (GS-MBE) growth. The effect of compositional modulation was described in terms of PL spectra, and TEM images for GaInP-AlGaInP MQWR lasers with 18 period (GaP)_1.5-(InP)_1.5 SPBS active layers. Based on transmission electron microscopy (TEM) images, the size of quantum-wire width was estimated, and the size fluctuation of quantum wires were discussed. Quantum-wire effect was discussed in terms of anisotropic lasing characteristics and EL polarization, which were reflected by an anisotropic oscillation strength in quantum wires and the comparison with GaInP-AlGaInP compressively strained quantum-film lasers was examined in terms of threshold current density. The condition under which quantum wires were formed by strained induced lateral layer ordering process was discussed in terms of anisotropic behaviors of lasing characteristics, such as threshold current density and lasing wavelength for GaInP-AlGaInP MQWR lasers with (GaP)_m/(InP) _mSPBS active layers. The lowest obtained J_th value was 278 A/cm² under the room temperature (r.t.) pulsed condition. The first CW operation of GaInP-AlGaInp quantum-wire laser was described. Threshold current was 294 A/cm² and CW operation up to 70°C was obtained     

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm² with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm^-1     

Comparative Performance of Passively Q-Switched Diode-Pumped Yb 3+-Doped Tungstate and Garnet Lasers Using Cr 4+:YAG Saturable Absorber

We investigated the continuous wave (CW) free-running and repetitive modulation in the kilohertz frequency domain of a passively Q-switched diode-pumped Yb:YAG, Yb:GGG, and Yb:KYW lasers by using Cr⁴⁺:YAG as a saturable absorber. The results presented in this paper are focused on the design of a passively Q-switched Yb-doped garnets or Yb-doped tungstates microlasers. The free-running performance of Yb:YAG, Yb:GGG, Yb:KGW, and Yb:KYW were characterized, and experimental parameters such as gain and loss were evaluated. We carried out a fit between our experimental results and an existing numerical model, which relates the experimental and the physical parameters of the ytterbium diode-pumped system to the minimal threshold pumping power. The best performance among the laser crystals was obtained for Yb:YAG laser. A maximum peak power of ap4.5 kW at an average output power of 1.32 W was extracted with an extraction efficiency of ap25%.     

Dual-Grating Spectral Beam Combination of High-Power Fiber Lasers

We describe a dual-grating spectral beam combination (SBC) system to combine multiple high-power fiber laser outputs while maintaining near-diffraction-limited beam quality. The two gratings are parallel in a grating rhomb configuration, with input and output beams that are parallel but shifted with wavelength, rather than the typical angular dispersion of a single grating. The resulting advantage of the dual-grating SBC over other beam combination systems is the relaxation of the linewidth requirement. We combined two fiber lasers with output powers of 115 W each and linewidths of about 0.15 nm ( ~40 GHz) to produce a combined beam of 190 W power with near-diffraction-limited beam quality (M ² ~ 1.18).     

1.047-μm Yb:Sr5(PO4)3F energystorage optical amplifier

The pumping and gain properties of Yb³⁺-doped Sr₅ (PO₄)₃F (Yb:S-FAP) are reported. Using a tunable, free running 900-nm Cr:LiSAF oscillator as a pump source for a Yb:S-FAP rod, the saturation fluence for pumping was measured to be 2.2 J/cm² based on either the spatial, temporal, or energy transmission properties of the Yb:S-FAP rod. The emission peak of Yb:S-FAP (1047.5 nm in air) is shown to overlap with that of Nd:YLiF₄ (Nd:YLF) to within 0.1 nm, rendering Yb:S-FAP suitable as an effective power amplifier for Nd:YLF oscillators. The small signal gain, under varying pumping conditions, was measured with a cw Nd:YLF probe laser. These measurements implied emission cross sections of 6.0×10^-20 and 1.5×10^-20 cm ² for π and σ polarized light. Respectively, which fall within the error limits of the previously reported values of 7.3×10^-20 and 1.4×10^-20 cm² for π and σ polarized light, obtained from purely spectroscopic techniques. The effects of radiation trapping on the emission lifetime have been quantified and have been shown to lead to emission lifetimes as long as 1.7 ms, for large optically dense crystals. This is substantially larger than the measured intrinsic lifetime of 1.10 ms. Yb:S-FAP crystal boules up to 25×25×175 mm in size, which were grown for the above experiments and were found to have acceptable loss characteristics (<~1%/cm) and adequately large laser damage thresholds at 1064 nm (~20 J/cm² at 3 ns). Overall, diode-pumped Yb:S-FAP amplifiers are anticipated to offer a viable means of amplifying 1.047-μm light, and may be particularly well suited to applications sensitive to overall laser efficiencies, such as inertial confinement fusion energy applications     

Average optical power monitoring in micromirrors

The thermal properties of tip-tilt micromirrors have been analyzed theoretically and measured experimentally for devices operated in air and in vacuum. Typical micromirror thermal conductances are shown to range from 10^-3 W/K for devices operated close to the substrate in air to 10^-5 W/K for devices operated in a vacuum. These results demonstrate that micromirror temperatures are extremely sensitive to the average optical signal incident upon them and can be used as probes of incident power in much the same way as thermal infrared detectors. This has been experimentally demonstrated using a λ = 661 nm diode laser with polysilicon micromirrors, and sensitivities reaching below 70 nW of absorbed optical power, limited by the Johnson and 1/f noise of the micromirrors and measurement system. Average optical power monitoring could be useful in large cross connects or other applications, where the additional integration of a tap/beamsplitter plus photodiode assembly is undesirable     

燃煤电厂湿式电除尘器减排及能效特性研究

在工况及负荷稳定的情况下,对122台燃煤电厂配套湿式电除尘器(金属板式35台、导电玻璃钢87台)开展多污染物的减排特性和能耗测试分析,结果表明,湿式电除尘器对各类污染物均具有较高的脱除效率,绝大部分湿式电除尘器出口颗粒物、PM2.5、雾滴和SO3可分别控制在5、2.5、25和10 mg/m3以下,出口PM2.5/PM占...