反尖晶石离子掺杂对LiMn2O4结构性能的影响

阐述了锂离子电池锰酸锂正极材料掺杂的重要性,研究了反尖晶石离子掺杂(Fe3 、Ga3 、Al3 )对锰酸锂正极材料结构和电化学性能的影响,并提出了影响锂离子电池充放电循环性能的机理。展望了反尖晶石离子掺杂在锂离子电池锰酸锂正极材料中的发展前景。     

W掺杂NCA正极材料电化学特性研究

采用共沉淀法制备的球形Ni_(0.8)Co_(0.15)(OH)_(1.9)作为锂离子电池正极材料前驱体,讨论了烧结制备LiNi_(0.8)Co_(0.15)Al_(0.05)O_2过程中W掺杂对正极材料结构和电化学性能的影响。结果表明:在烧结过程中引入Al并同时进行W掺杂,可得到球形形貌完整且表面具有一定空隙的正极材料;在750℃条件下烧结得到的LiNi_(0.8)Co_(0.15)Al_(0.049)W_(0.001)O_2正极材料具有极佳的电化学性能。W掺杂正极材料的放电比容量(2C)达到177.9 m Ah/g,循环300周后,容量保持率达到84.32%。在20C大倍率下,W掺杂正极材料具有153.9 m Ah/g的放电比容量,远高于未掺杂样品(95 mAh/g)。     

层状结构LiMn0.5Ni0.5O2材料的合成及性能

廉价正极材料的研究开发及应用是目前锂离子电池进一步发展和推广应用的关键.采用高温固相合成LiMn0.5Ni0.5O2材料,用XRD对合成材料结构进行表征,并用恒电流法进行电化学性能测试,在此基础上对材料进行Al掺杂改性.实验结果表明,合成材料经微量掺杂后具有较好的电化学循环性能,可作为锂离子电池的替代正极材料。     

铝掺杂正极材料Li(Ni0.5Mn0.5)1-xAlxO2的结构和性能

采用一步固相法制备了正极材料Li(Ni0.5Mn0.5)1-xAlxO2,研究了掺杂Al3 对材料结构和电化学性能的影响.X射线衍射分析(XRD)图表明当x≥0.1时样品中有杂质出现.扫描电子显微镜(SEM)分析表明,各样品粒径分布均匀,x=0.02时样品平均粒径小于150 nm.掺杂少量Al3 能有效提高材料的放电比容量.随着掺杂量的增大,材料的循环性能得到改善.     

锂离子电池正极材料掺杂稀土的研究进展

综述了近年来锂离子电池正极材料掺杂稀土的研究进展;介绍了稀土掺杂LiCoO2和LiMn2O4的掺杂量、烧结工艺对正极材料结构和电化学性能的影响,以及稀土掺杂LiNiO2和LiFePO4的结构和电化学性能。     

Al、Mn共掺杂高镍正极材料电化学性能研究

高镍正极材料形貌受合成体系中Mn和Al的影响比较大.采用简单的共沉淀方法合成出正极材料前驱体[Ni0.8Co0.15](OH)1.9,在烧结过程中同时引入不同比例的Al、Mn离子,以其协同作用共同实现材料的稳定层状结构,提高材料循环稳定性,从而改善材料的电化学性能.结果显示:在800°C烧结条件下,当Mn和Al的掺杂量...     

掺杂金属离子的氢氧化镍的电化学性能

通过共沉淀结合水热处理法,合成了不同金属离子(Ar+、Zn2+)掺杂的正极材料氢氧化镍[Ni(OH)2].用XRD测试分析样品的结构,用恒流充放电、循环伏安及交流阻抗等测试研究样品的电化学性能.单独掺杂Zn2+,得到以β-Ni(OH)2结构为主的电极材料;单独掺杂Al3+或共同掺杂Ar+和Zn2,可以获得α-Ni(OH)2的结构.共同掺杂Al3+和Zn2+的Ni(OH)2,循环稳定性好,单个镍原子交换的电子数多,最大为1.93个,且电荷转移和质子扩散阻力小.     

阳离子掺杂对LiMn_2O_4结构和电性能的影响

采用固相法合成了尖晶石LiMn_(2-x)M_xO_4(M=Co、Cr、Al、Ti,x=0、0.05、0.1、0.15)正极材料,研究了不同金属阳离子掺杂和掺杂量对LiMn_(2-x)M_xO_4结构及电性能的影响。通过X射线衍射图谱分析,离子半径较小的Co、Cr、Al掺杂使材料晶胞收缩,尖晶石结构更加稳定。材料初始容量随着掺杂量提高而降低,但循环性能显著提高。其中Co掺杂在x=0.1时,LiMn_(2-x)M_xO_4样品1 C首次放电比容量为117.6 mAh/g,前20次容量保持率达92.9%,综合性能最优。     

LiNi0.75Co0.2Al0.05-xMgxO2的合成及性能研究

采用溶胶-凝胶法制备了锂离子电池正极材料LiNi0.75Co02Ab0.05-xMgxO2(x=0,0.01,0.025),通过充放电实验、慢扫描循环伏安法和交流阻抗技术进行了电化学性能测试.结果表明:对LiNi1-xCoxO2实施共掺杂Mg2 、Al3 ,可改善其层状结构稳定性和充放电循环特性.将所得LiNi075Co0.2Al0.025Mg0.025O2作为锂离子二次电池正极材料,电池首次放电比容量达170 mAh/g,经100次循环充放电后仍能保持初始容量的78.3%.     

二元掺杂LiMn2O4正极材料的研究

采用高温固相法合成了二元掺杂的锂离子电池正极材料LiMxM'yMn2-x-yO4(M=Al,Ni,Co;M'=La,Sm;x=0.01,0.02,0.08;y=0.01,0.02).使用XRD和SEM分析了正极材料的结构和形貌,结果表明:材料具有良好的尖晶石型结构,颗粒分布均匀;充放电测试表明:掺杂不同元素对LiMn2O4电化学性能影响很大;相对其他正极材料,LiCo0.08La0.02Mn1.90O4在3.0～4.3 V电压区间内具有最好的电化学性能,首次放电比容量达120 mAh/g,50次循环后的放电比容量为109 mAh/g,容量衰减率为7%.     

Al掺杂对Fe_2Si电子结构和磁学特性的影响

采用第一性原理的贋势平面波方法,计算了无掺杂和Al掺杂Fe_2Si体系的电子结构和磁学特性,并分析了Al掺杂对Fe_2Si体系电磁特性的影响。计算结果表明,未掺杂和Al掺杂Fe_2Si体系为半金属铁磁体,自旋向上的能带结构穿过费米面表现为金属特性,未掺杂Fe_2Si体系自旋向下的能带表现为间接带隙半导体特性,带隙值为0.464 eV;Al掺杂Fe_2Si体系自旋向下的能带表现为Z间的直接带隙半导体特性,带隙值为0.541 eV。Al掺杂使各原子磁矩和Fe_2Si体系的总磁矩均减小,体系的带隙值增加,相应的半金属隙也增加,并且使得体系自旋向下部分由间接带隙变为直接带隙半导体。Fe_2Si体系的半金属性和磁性主要来源于Fe-3d电子之间的d-d交换,Si-3p电子与Fe-3d电子之间的p-d杂化。综上所述,掺杂是调控半金属铁磁体Fe_2Si电磁特性的有效手段。     

Optical and electrical properties of ZnO thin film containing nano-sized Ag particles

Low-temperature crystallized ZnO thin film was achieved by sol–gel process using zinc acetate dihydrate and 2-methoxyethanol as starting precursor and solvent, respectively. Ag nanoparticles were prepared with uniform size at 4.4 nm by spontaneous reduction method of Ag 2-ethylhexanoate in dimethyl sulfoxide (DMSO). The optical and electrical properties of ZnO thin films containing various contents of Ag-nanoparticles were monitored. Light scattering and charge emission and scattering behaviors of Ag nanoparticles in ZnO film were found. The incorporation of Ag nanoparticles into Al-doped ZnO film was also investigated. The optical transmittance was not degraded but the increase of electrical sheet resistance was found. The effect of Al-dopant on the transmittance and electrical sheet resistance of ZnO film was found too great to distinguish the positive effect of the incorporation of Ag nanoparticles into Al-doped ZnO thin films.     

铜铟镓硒柔性薄膜太阳电池的制备及性能表征

以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。     

Al掺杂的ZnO纳米结构材料制备及其电极设计

介绍了一维Al掺杂的ZnO（Al-ZnO）纳米结构材料的制备,研究了该材料体系的电极设计与优化。结果表明,适合于这种材料的电极为Au／Ni双层金属膜,经过在Ar和N2气氛中分别退火处理后,Au／Ni双层金属膜与Al-ZnO纳米结构材料的接触电阻得到明显降低,并且在Ar气氛中退火要好于在N2气氛中退火。     

Electrical and optical properties of epitaxial and polycrystalline undoped and Al-doped ZnO thin films grown by pulsed laser deposition

Undoped and Al-doped (1.6%) ZnO films were prepared on (0001) sapphire and fused silica substrates using a pulsed laser deposition technique. The ZnO films on sapphire substrates were epitaxially grown, while the ZnO films on fused silica substrates were texturally grown. The films on sapphire substrates were ordered along the in-plane direction and had grains in which the c-axis was well aligned normal to the substrate. However, the films on fused silica were randomly oriented along the in-plane direction and had poor c-axial aligned grains. The structure analyses showed that the epitaxial ZnO films had low-angle grain boundaries, while the textured polycrystalline ZnO films had high-angle tilt and twist grain boundaries. The nature of the grain boundaries influenced the electrical and optical properties of the undoped and Al-doped ZnO films. Resistivity, Hall mobility, carrier concentration, and near band edge emission of the films were measured at room temperature and discussed in connection with the nature of grain boundaries.     

Studies on Al-doped ZnO thin-film transistors with Pb(Zr0.3Ti0.7)O3 gate insulator

We report the fabrication of Al-doped ZnO thin-film transistors (FeFETs) on the ferroelectric Pb(Zr_0.3Ti_0.7)O₃ (PZT) gate insulator for the application of nonvolatile random access memory. The results demonstrate the basic principle of Al-doped ZnO resistive switching between the high and low resistive states upon the polarization switching of ferroelectric layer. Own to the good ferroelectric property and high reliability of PZT, such as fatigue, high speed of signal reading and writing, low coercive electric field, etc., this device has an excellent electrical performance. The memory device exhibits a source-drain current modulation with an ON/OFF current ratio close 10³.     

Fiber Design For High-Power Low-Cost Yb:Al-Doped Fiber Laser Operating at 980 nm

We investigated an Yb:Al-doped depressed-clad hollow optical fiber (DCHOF) for cladding-pumped 980-nm laser operation. With a careful design, the nonzero fundamental-mode cutoff characteristics of a DCHOF allows the competing 1030- 1060 nm emission to be filtered out, despite being quite close to 980 nm. The laser yielded over 3 W of output power in a diffraction limited beam (M²~1.09) from a DCHOF with an inner-cladding diameter of 120 mum. This is large enough for pumping with standard fiber-coupled multimode diode sources. By reducing the inner-cladding size to 90 mum, and hence, lowering the 980-nm threshold, the output power was scaled up to 7.5 W. However, we believe that the M²-parameter degrades to 2.7, as a result of increased cladding-mode lasing, as the cladding thickness is reduced.     

Garnet电解质/Li金属界面改性

通过物理/化学沉积方法在Garnet电解质(Li6.85La2.9Ca0.1Zr1.75Nb0.25O12,LLCNZO)表面沉积不同类型过渡层,在相同条件下来综合比较其对界面改性程度的差别。采用恒流充放电、电化学阻抗谱、扫描电子显微镜等方法,研究了几种代表性过渡层[Al-doped ZnO(AZO),Si-Ti合金,C,Ti以及LiPON]对Garnet电解质/Li界面阻抗的影响。通过研究结果比较,当所沉积的过渡层与Li金属反应时,可以最大程度地降低界面阻抗(如AZO过渡层可以使界面阻抗由192 000Ω/cm^2降低至1 564.5Ω/cm^2)。其主要原因在于该类界面层的引入可以有效增加电极与电解质之间的接触面积,同时还可以均匀化界面电场的分布,从而提高抑制锂生长和穿透电解质片的能力,改善Garnet电解质与Li金属之间的界面性能。     

Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films

This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al₂O₃). Various AZO films on glass were prepared by changing the H₂/(Ar?+?H₂) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H₂ flow ratio, respectively. As a result, the AZO/H films grown with 2% H₂ addition showed excellent electrical properties with a resistivity of 4.98?×?10⁴ Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H₂ flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied.     

Preparation and Field Emission Performance of Metal-Doped ZnO NRAs/Graphene Composite Material

Abstract

Al doped and Cu doped ZnO NRAs/Graphene composite material are synthesized by introducing the concentrations of 0%, 2%, 4%, 6%, 8% using hydrothermal method, and their structure and morphology are characterized by XRD, EDS and SEM, XPS. The results show that Al:6% doped and Cu:4% doped ZnO/Graphene nanorod array have the best crystal quality and morphology compared to other concentrations of doped samples. Other than that, the field emission performances of Al:6% doped and Cu:4% doped ZnO NRAs/Graphene are measured. The turn-on field and field enhancement factor of Al:6% doped ZnO NRAs/Graphene are 1.51?V/mm and 11264. The turn-on field and field enhancement factor of Cu:4% doped ZnO NRAs/Graphene are 1.80?V/mm and 10076. It is found that the field emission performance of Al: 6% doped ZnO NRAs/Graphene is higher than the sample with doped Cu, which indicating that Al-doped ZnO NRAs/Graphene might have promising applications for various field emission devices.