Effect of Ca substitution on microwave dielectric properties of BaV<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

Effects of Ca substitution for Ba on the phase composition, microstructure, sintering behavior and microwave dielectric properties of nominal ceramics Ba_1-xCa_xV₂O₆ (0.2?≤?x?≤?0.5) were investigated. The XRD, Raman and SEM results revealed that BaV₂O₆ and CaV₂O₆ composite ceramics were formed. Nominal ceramics Ba_1-xCa_xV₂O₆ could be well densified at about 550 °C via a solid-state reaction method. The microwave dielectric properties exhibited strong dependence on the composition and microstructure. Typically, the Ba_0.7Ca_0.3V₂O₆ ceramics sintered at 550 °C exhibited excellent microwave dielectric properties: ε_r?=?10.9, Qxf?=?17,100 GHz (at 9.9 GHz), and τ_f?=?4 ppm/°C. Meanwhile, Ba_0.7Ca_0.3V₂O₆ ceramics also showed good chemical compatibility with Al electrode. These results indicated that the Ba_0.7Ca_0.3V₂O₆ ceramics could be a promising candidate for the ULTCC technology.     

Phase compositions and microwave dielectric properties of MgTiO<Subscript>3</Subscript>-based ceramics obtained by reaction-sintering method

MgTiO₃-based microwave dielectric ceramics were prepared successfully by reaction sintering method. The X-ray diffraction patterns of the sintered samples revealed a major phase of MgTiO₃-based and CaTiO₃ phases, accompanied with Mg₂TiO₄ or MgTi₂O₅ determined by the sintering temperature and time. The microwave dielectric properties had a strong dependence of sintering condition due to the different phase compositions and the microstructure characteristics. The ceramics sintered at 1360 °C for 4 h exhibited good microwave dielectric properties: a dielectric constant of 20.3, a high quality factor of 48,723 GHz (at 9GHz), and a temperature coefficient of resonant frequency of ?1.8 ppm/^oC. The obtained results demonstrated that the reaction-sintering process is a simple and effective method to prepare the MgTiO₃-based ceramics for microwave applications.     

Phase transition,microstructure and properties of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)<Subscript>1-x</Subscript>Ba<Subscript>x</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

In this article, (Na_0.5Bi_0.5)_1-xBa_xTiO₃ lead-free piezoelectric ceramics were prepared by solid-state reaction. The influence of Ba contents on phase structures, compositional distribution and electrical properties of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ ceramics were systematically investigated to further understand the nature of phase transition. It was found that the phase structure of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ transforms from rhombohedral to tetragonal symmetry at x = 0.06 ~ 0.07 and Ba²⁺ segregation forms the coexistence of Ba-rich tetragonal and Ba-deficient rhombohedral phases close to MPB. The electrical properties of prepared samples regularly changed with Ba content, which is closely related to the distribution of rhombohedral and tetragonal phases. The prepared sample near MPB exhibited the largest dielectric constant and the excellent piezoelectric properties (the maximal measuring field reached 78 kV/cm and the piezoelectric constant d ₃₃ = 151pC/N).     

Effects of Al<Superscript>3+</Superscript> substitution on the luminescence properties of LuNbO<Subscript>4</Subscript> doped with Eu<Superscript>3+</Superscript> and Tb<Superscript>3+</Superscript> ions

The effect of Al³⁺ substitution on the enhancement of the luminescence of Lu_1–xAl_xNbO₄:Eu³⁺ and Lu_1–xAl_xNbO₄:Tb³⁺ was investigated. X-ray diffraction patterns confirmed that the Eu³⁺, Tb³⁺, and Al³⁺ ions were fully incorporated into the Lu³⁺ sites. In the case of Lu_1–xAl_xNbO₄:Eu³⁺, the predominant red emission (614 nm) was assigned to the ⁵D₀?→?⁷F₂ transition of Eu³⁺ and for x?=?0–0.05, its intensity increased up to ~125 and 108% under 395 nm (⁷F₀ → ⁵L₆) and a charge transfer band excitation, respectively. For Lu_1–xAl_xNbO₄:Tb³⁺, the strongest emission band peaking at 551 nm was attained in the green region among multiple emission bands corresponding to the ⁵D₄?→?⁷F_J transitions of Tb³⁺. Increasing the x values from 0 to 0.05 increased the green emission significantly by ~137%. These phenomena were explained by the local structural distortions and crystal field asymmetry surrounding Eu³⁺ and Tb³⁺, which were attributed to a large difference in the ionic radii of Al³⁺ and Lu³⁺.     

Excellent dielectric constants observed in heterogeneous conduction Ba(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> ceramics doped with Sr(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript>

The (1-x)Ba(Zr_0.25Ti_0.75)O₃-xSr(Fe_0.5Nb_0.5)O₃ or (1-x)BZT-xSFN ceramics have been fabricated via a solid-state reaction technique. All ceramics exhibit a pure phase perovskite with cubic symmetry. The addition of a small amount of SFN (x?=?0.1) produces an obvious change in dielectric behavior. Very high dielectric constants (ε_r?>?164,000 at 1 kHz and temperature?>?150°C) are observed and the value is obviously higher than dielectric constants for Ba(Zr_0.25Ti_0.75)O₃ and Sr(Fe_0.5Nb_0.5)O₃ ceramics. The ferroelectric measurement data suggests that the unmodified sample exhibited a ferroelectric behavior. However, a transformation from a ferroelectric to a relaxor-like behavior is noted with increasing x concentration. Impedance Spectroscopy (IS) analysis indicates that the presence of excellent dielectric constants is due to the heterogeneous conduction in the ceramics after adding SFN, which can be explained in terms of the Maxwell-Wagner polarization mechanism.     

Dielectric properties of pure and Mn-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics over a wide temperature range

The effect of manganese doping on the dielectric properties of CaCu₃Ti_4-xMn_xO₁₂ (x?=?0, 0.02, 0.04) were investigated over a broad temperature range (93–723 K) in the frequency range from 100 Hz to 10 MHz. Two dielectric relaxations and two dielectric anomalies were observed. The low-temperature relaxation appearing in the temperature range below 200 K is the characteristic relaxation for CaCu₃Ti₄O₁₂. This relaxation was attributed to the polaron relaxation due to electron hopping between Ti³⁺ and Ti⁴⁺ states. Due to the negative factors of notable decreases in the Ti³⁺/Ti⁴⁺ and Cu³⁺/Cu²⁺ ratios and the concentration of oxygen vacancies as revealed by X-ray photoemission spectroscopy, Mn-doping was found to gradually destroy rather than move this relaxation to a higher temperature. The high-temperature relaxation occurring around room temperature was found to be a Maxwell-Wagner relaxation caused by grain boundaries. Our results confirm that the colossal dielectric behavior in the tested samples results from both polaron and Maxwell-Wagner relaxations, but is predominated by the latter relaxation. The low-temperature anomaly behaves as a phase-transition-like behavior. It was argued to be created by oxygen vacancies transition from static disorder to dynamic disorder. The high-temperature anomaly is an artificial effect caused by negative capacitance.     

Studies of structural,dielectric and impedance properties of Bi<Subscript>9</Subscript>Fe<Subscript>5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> ceramics

Bi₉Fe₅Ti₃O₂₇ is an eight-layered material belonging to the family of bismuth layered structured ferroelectromagnets. The polycrystalline sample of this compound was prepared by a standard solid-state reaction technique. The formation of the compound in an orthorhombic crystal structure was confirmed by an X-ray diffraction (XRD) technique (lattice parameters: a?=?5.5045[27] Å, b?=?5.6104[27] Å, c?=?76.3727[27] Å). Detailed studies of surface morphology of the compound using scanning electron microscopy (SEM) exhibit that the compound has domains of plate shaped grains. Studies of dielectric and electric properties in a wide temperature range (30–500 °C) at different frequencies (100 Hz–1 MHz) exhibit an anomaly at 291?±?2 °C, which is related to ferroelectric to paraelectric phase transition as suggested by hysteresis loop at room temperature. The values and nature of temperature variation of dc conductivity exhibit the NTCR behavior of the compound.     

Structure and properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>-0.38PbTiO<Subscript>3</Subscript> ceramics with MPB composition

0.62Bi(Mg_1/2Ti_1/2)O₃-0.38PbTiO₃-xwt%Bi₂O₃ (BMT-0.38PT-xBi₂O₃) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0?≤?x?≤?0.3. For x?=?0.3, it exhibited good piezoelectric properties, d₃₃ ~245pC/N and k_p ~40 %. With the increase of Bi₂O₃ content, the Curie temperature (T_c) was found to increase, and the dielectric loss was found to decrease above 200 °C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 °C by thermal depoling method.     

Properties and crystallization kinetics of low temperature co-fired Li<Subscript>2</Subscript>O-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> electroceramics

The glass-ceramic in the Li₂O-Al₂O₃-SiO₂ system has been prepared by melt quenching route. The crystallization kinetics was studied by differential scanning calorimetry. The effects of sintering temperature on the phase transformation, sintering behavior, bulk density, microstructure, thermal expansion, bending strength and dielectric properties were also investigated by X-ray diffractometry and scanning electron microscopy. (Li, Mg, Zn)_1.7Al₂O₄Si₆O₁₂ is the first crystalline phase forming in the glass-ceramic and transforms to LiAlSi₃O₈ phase at 800 °C. The other two crystalline phases of ZrO₂ and CaMgSi₂O₆ precipitate at 700 and 750 °C, respectively. The densification of this LAS glass-ceramic starts at around 730 °C and stops at about 805 °C. The coefficient of thermal expansion increases with the increasing sintering temperature. The sample sintered at 800 °C for 30 min exhibited excellent properties. The nonisothermal activation energy of crystallization is 149 kJ/mol and the values of Avrami constant (n) are in the range of 3.2 to 3.9. The LAS glass-ceramic sintered at 800 °C for 30 min showed excellent properties. This makes that this material suitable for a number of LTCC applications.     

Structural,dielectric and magnetic properties of particulate composites of relaxor (BaTi<Subscript>0.85</Subscript>Sn<Subscript>0.15</Subscript>O<Subscript>3</Subscript>) and ferrite (NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript>) synthesized by gel-combustion method

Particulate composites of (1-x) BaTi_0.85Sn_0.15O₃ – x NiFe₂O₄ (with x?=?5, 10,15 and 20 wt%) were synthesized using the solid-state reaction method by sintering at 1350 °C for 4 h. Formation of the diphase composites was confirmed by X-ray diffraction (XRD) and Fourier Transform Infra-red (FTIR) techniques. Temperature (RT-200 °C) and frequency (20 Hz- 1 MHz) dependent of AC conductivity, dielectric constant and dissipation have been studied. The dielectric constant exhibits strong frequency dispersion in the range 20 Hz-1 kHz which is attributed to Maxwell-Wagner interfacial polarization occurring at grain-grain-boundaries interface/interface of grains of BTS-NF. The M-H curve of all the composites exhibited a hysteresis loops typical charcateistic of a ferromagnetic material. The ferromagnetic ordering in the composites on account of NiFe₂O₄ as a constituent is explained using bound magnetic polarons (BMPs) model. The experimental magnetic data have been fitted to BMP model. Value of M_s is smaller, whereas of H_c and M_r are higher of the composites compared to value for NiFe₂O₄. The temperature at which divergence in the M vs. T plot in ZFC and FC starts is higher for the composites than for NiFe₂O₄.     

Influence of fillers on the re-crystallization and dielectric properties of 60ZnO-30B<Subscript>2</Subscript>O<Subscript>3</Subscript>-10SiO<Subscript>2</Subscript> glass

This paper reports re-crystallization behaviour of 60ZnO-30B₂O₃-10SiO₂ pure glass. Influence of different fillers on the re-crystallization is also highlighted. Irrespective of the nature of the filler, glass transition temperature (T_g) remains the same as that of the pure glass at 570 °C. The onset crystallization temperature is enhanced by 15 to 25 °C owing to filler addition. The peak crystallization temperature corresponding to Zn₃B₂O₆, ZnB₂O₄ and willemite occurs at 735, 810 and 851 °C for the pure glass. In the presence of alumina, gahnite emerges first at 700 °C followed by ZnB₂O₄ phase. With mullite as filler, initially ZnB₂O₄ and willemite formed at 700 °C and gahnite phase emerged only at 750 °C and peaks at 787 °C. In the presence of fused silica only ZnB₂O₄ and willemite phases were observed. The dielectric properties of the pure glass and that of the glass + fillers are also reported. Re-crystallization of various low K phases ensures good dielectric porpertis with reduced glass content after sintenring.     

Normal-to-relaxor ferroelectric phase transition and electrical properties in Nb-modified 0.72BiFeO<Subscript>3</Subscript>-0.28BaTiO<Subscript>3</Subscript> ceramics

Preparation and electrical properties of sintered bodies consisting of monophase cubic spinel oxides, Cr_XMn_1.5Co_(1.0-X)Ni_0.5O₄ (0 ≦ X ≦ 0.42), were investigated. Specimens with compositions within X = 0.42 were prepared as starting materials. The element of Cr was used to exchange Co³⁺ in octahedral sites (B sites) with Cr³⁺ so that the hopping mechanism can be discussed. The sintered bodies with mono cubic spinel structure were confirmed to be prepared by heat-treatment for 48 h in air at 1000 °C to convert them into a cubic spinel structure after sintering at 1400 °C. The semiconductive characteristics of the sintered bodies were determined as p-type because the Seebeck coefficients were all positive. The electrical conduction of the sintered bodies was concluded to be controlled by the small polaron hopping mechanism. In the region 0.1 ≦ X ≦ 0.42, the lattice constant increases and electrical conduction (σ) decreases linearly with increasing Cr concentration. The decrease in σ and the increase in the lattice constant corresponded to the increase in Cr concentration by which the jumping distance of electrons between Mn³⁺ and Mn⁴⁺ is lengthened.     

Ionic conduction and crystal structure of aluminum doped NASICON-type LiGe<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript> glass-ceramic crystallized at different times and temperatures

In this communication, NASICON-type glass-ceramic (lithium germanium phosphate, LiGe₂(PO₄)₃) was prepared as lithium super ionic conductor using aluminum as dopant for ionic conduction improvement. The solid solution was Li_1?+?xAl_xGe_2-x(PO₄)₃ (x?=?0.5) that Ge⁴⁺ ions were partially substituted by Al³⁺ ions in crystal structure. Initial glasses were converted to glass-ceramics at different times and temperatures for maximum ionic conduction achievement. The crystals were characterized by X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Energy-Dispersive X-ray spectroscopy (EDX), Differential Scanning Calorimetry (DSC) and Complex Impedance Spectroscopy (CIS) methods. The maximum lithium ion conductivity for glass-ceramic, 5.32?×?10^?3 S/cm at 26 °C was obtained for specimen crystallized at 850 °C for 8 h with minimum activation energy of 0.286 eV. Increasing the crystallization temperature results in secondary phase formation in grain boundary and increasing in crystallization time results in microcracks formation in specimen. Both phenomena decreased the ionic conductivity.     

Evaluation of La<Subscript>2</Subscript>CoTi<Subscript>0.7</Subscript>Mg<Subscript>0.3</Subscript>O<Subscript>6</Subscript> as an electrode material for a symmetrical SOFC

La₂CoTi_0.7Mg_0.3O₆ (LCTM) material has been prepared at 1473 K for 24 h in air. X-ray powder diffraction study has revealed that it contains two orthorhombic perovskite phases (in a ratio ~1:4) with close unit cell parameters. Annealing of LCTM in reducing (Ar/H₂, 8%) atmosphere at 1173 K for 12 h has resulted in the preparation of a single-phase material containing the GdFeO₃-type perovskite phase with the unit cell parameters of a?=?5.5631(3) Å, b?=?5.5462(3) Å, c?=?7.8522(5) Å. LCTM material exhibits a reversible transformation of a mixture of two perovskite phases with close cation content in air and a single perovskite phase in a reducing atmosphere. Both as-prepared and reduced LCTM samples have been studied by thermogravimetric analysis and dilatometry in air and Ar/H₂ (8%). No chemical interaction between the as-prepared LCTM and standard electrolyte materials for SOFC like GDC and YSZ has been observed up to 1273 K. High-temperature electrical conductivity of the as-prepared LCTM at variable oxygen partial pressure (10^?4-0.21 atm) showed weak dependence over pO₂ with E_a?=?0.48?±?0.01 eV. AC impedance study of the symmetrical cells LCTM/GDC/LCTM has revealed ASR value at 1173 K of ~8.1?±?0.1 Ω?cm² in air and 0.24?±?0.05 Ω?cm² in a reducing atmosphere. These results allow to consider LCTM as a promising electrode material for a symmetrical SOFC.     

Analysis of domain structure in the Ce<Subscript>0.8</Subscript>Sm<Subscript>0.15</Subscript>Ca<Subscript>0.05</Subscript>O<Subscript>1.875</Subscript> sample

A Ce_0.8Sm_0.15Ca_0.05O_1.875 (S15C05DC) sample is synthesized by a solid-state reaction serving as a potential electrolyte material for intermediate-temperature solid oxide fuel cells. The sintered sample was found to be dense with a cubic fluorite structure. The addition of Ca²⁺ can act as a CeO₂ sintering aid for accelerating the process. The microstructures and properties of the sample were analyzed by X-ray diffractometry, Raman spectroscopy, scanning electron microscopy, thermomechanical analysis, and transmission electron microscopy. Existing oxygen vacancies in the sample are indicated by a Raman peak at 558 cm^?1. The thermal expansion coefficient of the S15C05DC sample at 200–800 °C is approximately 12–14 × 10^?6 °C^?1. The control of domain size is an important factor for improving the conductivity of S15C05DC. Local clustered nano-domains, with higher Sm₂O₃ concentrations, were found to regularly arrange to induce the formation of a nanoscale C-type superlattice structure. While Ca doping decreased the formation of the C-type Sm₂O₃ structure.     

Dielectric and Piezoelectric Properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-NaNbO<Subscript>3</Subscript>Lead-Free Ceramics

The ternary lead-free piezoelectric ceramics system of (1 – x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃] – xNaNbO₃(x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) were synthesized by conventional solid state reaction method. The crystal structure, dielectric, piezoelectric properties and P-E hysteresis loops were investigated. The crystalline structure of all compositions is mono-perovskite phase ascertained by XRD, and the lattice constant was calculated from the XRD data. Temperature dependence of dielectric constant _r and dissipation factor tan measurement revealed that all compositions experienced two phase transitions: from ferroelectric to anti-ferroelectric and from anti-ferroelectric to paraelectric, and these two phase transitions have relaxor characteristics. Both transition temperatures T_d and T_m are lowered due to introduction of NaNbO₃. P-E hysteresis loops show that 0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃ ceramics has the maximum P_r and E_c corresponding to the maximum values of electromechanical coupling factor K_p and piezoelectric constant d_33. The piezoelectric constant d₃₃ and electromechanical coupling factor K_p decrease a little, while the dielectric constant ₃₃^T/₀ improves much more when the concentration of NaNbO₃ is 8 mol%.     

Formation of a KNbO<Subscript>3</Subscript> single crystal using solvothermally synthesized K<Subscript>2-m</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6-m/2</Subscript> pyrochlore phase

A K_2-mNb₂O_6-m/2 single crystal with a pyrochlore phase formed when the Nb₂O₅?+?x mol% KOH specimens with 0.6?≤?x?≤?1.2 were solvothermally heated at 230 °C for 24 h. They have an octahedral shape with a size of 100 μm, and the composition of this single crystal is close to K_1.3Nb₂O_5.65. The single-crystal KNbO₃ formed when the single-crystal K_2-mNb₂O_6-m/2 was annealed at a temperature between 600 °C and 800 °C with K₂CO₃ powders. When annealing was conducted at 600 °C (or with a small amount of K₂CO₃), the KNbO₃ single crystal has a rhombohedral structure that is stable at low temperatures (< ? 10 °C). The formation of the rhombohedral KNbO₃ structure can be explained by the presence of the K⁺ vacancies in the specimen. The KNbO₃ single crystal with an orthorhombic structure formed when the K_2-mNb₂O_6-m/2 single crystal was annealed at 800 °C with 20 wt% of K₂CO₃.     

Pulsed arterial spin labelling at ultra-high field with a <Emphasis Type="Italic">B</Emphasis><Stack><Subscript>1</Subscript><Superscript>+</Superscript></Stack>-optimised adiabatic labelling pulse

Objective

Arterial spin labelling (ASL) techniques benefit from the increased signal-to-noise ratio and the longer T ₁ relaxation times available at ultra-high field. Previous pulsed ASL studies at 7 T concentrated on the superior regions of the brain because of the larger transmit radiofrequency inhomogeneity experienced at ultra-high field that hinders an adequate inversion of the blood bolus when labelling in the neck. Recently, researchers have proposed to overcome this problem with either the use of dielectric pads, through dedicated transmit labelling coils, or special adiabatic inversion pulses.

Materials and methods

We investigate the performance of an optimised time-resampled frequency-offset corrected inversion (TR-FOCI) pulse designed to cause inversion at much lower peak B ₁ ⁺ . In combination with a PICORE labelling, the perfusion signal obtained with this pulse is compared against that obtained with a FOCI pulse, with and without dielectric pads.

Results

Mean grey matter perfusion with the TR-FOCI was 52.5 ± 10.3 mL/100 g/min, being significantly higher than the 34.6 ± 2.6 mL/100 g/min obtained with the FOCI pulse. No significant effect of the dielectric pads was observed.

Conclusion

The usage of the B ₁ ⁺ -optimised TR-FOCI pulse results in a significantly higher perfusion signal. PICORE–ASL is feasible at ultra-high field with no changes to operating conditions.

     

Crystallization,microstructures and properties of low temperature co-fired CaO-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> glass-ceramic

CaO-Al₂O₃-SiO₂ glass-ceramic were prepared by melt quenching technique. The crystallization behavior and properties were studied by means of a non-isothermal, thermal analysis technique, X-ray diffraction and scanning electron microscopy. The influence of sintering temperature on phase formation, microstructure, bending strength, dielectric and thermal properties were determined. The activation energy of crystallization and the Avrami parameter were also discussed. The X-ray diffraction results show that SiO₂ phase could be found in all samples and CaSiO₃ and anorthite phases could only be observed in the samples sintered at above 875°C. The densification of glass-ceramic starts at 730°C after the liquid glass is formed and stops at 803°C. Complete densification was achieved at 875°C and the highest mechanical strength was obtained at 850°C, but density significantly decreased at higher temperatures. The coefficient of thermal expansion and the dielectric constant increase with the increasing sintering temperature. The value of the Avrami parameter (n) is ~1.6 and the apparent activation energy (E) is 298 kJ/mol.     

Dielectric properties and defect mechanisms of (1-<Emphasis Type="Italic">x</Emphasis>)Ba(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> -<Emphasis Type="Italic">x</Emphasis>BiYbO<Subscript>3</Subscript> ceramics

(1-x)Ba(Fe_0.5Nb_0.5)O₃ -xBiYbO₃ (BFN-xBY) ceramics were prepared by a conventional solid-state reaction method. The dielectric properties and relaxation behavior of BFN-xBY ceramics were analyzed according to dielectric and impedance spectroscopy. Dielectric permittivity of the ceramics increases with increasing temperature below 500 K then remains unchanged up to 700 K, while corresponding loss factor decreases with the increase of temperature below 500 K then increase slowly. Defect compensation mechanism of this system was analyzed in detail. The giant dielectric behavior of the ceramics arises from the internal barrier layer capacitor (IBLC) effect. Polarization effect at insulating grain boundaries between semiconducting grains accompanied by a strong Maxwell-Wagner (MW) relaxation mode. The characteristic of grain boundaries was revealed using impedance spectroscope and the universal dielectric response law.