Diode array pumped kilowatt laser

The diode array pumped kilowatt laser (DAPKL) has demonstrated more than an order of magnitude increase in brightness and average power for short pulse diode-pumped solid-state lasers since its inception in 1991. Significant advances in component technology have been demonstrated, including: development of a diffusion bonding process for producing large slabs of Nd:YAG laser material. Phase conjugation by stimulated Brillouin scattering (SBS) has been demonstrated with high reflectivity and fidelity in a simple focused geometry with input powers of 100 W. Pulse energies at 1.06 μm of 10 J have been demonstrated with a beam quality of 1.5 times diffraction limited at the 500-W level. An average power of 875 W at 100 Hz has been obtained. Efficient frequency doubling with a record power of 165 W has been demonstrated with 5 J per pulse at 0.53 μm. Work is ongoing to enclose the system in a compact brassboard with improved performance and long term stability     

Cryogenic Yb3+-Doped Solid-State Lasers

Cryogenically cooled solid-state lasers promise a revolution in power scalability while maintaining a good beam quality because of significant improvements in efficiency and thermo-optic properties. This is particularly true for Yb lasers because of their relatively low quantum defect and relatively broadband absorption even at cryogenic temperatures. Thermo-optic properties of host materials, including thermal conductivity, thermal expansion, and refractive index at low temperature, are reviewed and data presented for YAG (ceramic and single crystal), GGG, GdVO₄, and Y₂O₃. Spectroscopic properties of Yb:YAG and Yb:LiYF₄ (YLF) including absorption cross sections, emission cross sections, and fluorescence lifetimes at cryogenic temperatures are characterized. Recent experiments have pushed the power from an end-pumped cryogenically cooled Yb:YAG laser to 455-W continuous-wave output power from 640-W incident pump power at an of M² 1.4.     

Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC bylow-pressure metal-organic vapor phase epitaxy

We studied the lasing mechanism of an InGaN-GaN-AlGaN multiquantum-well (MQW) laser diode by making various optical characterizations on the diode. Excitation power dependence of photoluminescence (PL) intensity was obtained to investigate the carrier recombination process of the laser. Surface emission and edge emission were compared by optical pumping to clarify where the lasing lines were located in relation to the absorption continuum. From the results, we demonstrate that lasing phenomena in our laser are dominated by free carriers. PL mapping was also taken on the same laser chip to examine the in-cavity bandgap inhomogeneity. We found a very large bandgap scattering of 100 meV. We also found that the wavelength distribution has a periodic modulation. We clarified that the various stimulated emission lines observed in our lasers are caused by the in-cavity spatial bandgap inhomogeneity of the InGaN MQW     

Mode-scalable fiber-based chirped pulse amplification systems

A new generation of compact and robust ultrashort pulse lasers is currently emerging based on rare-earth doped fiber gain media. This paper reviews the development of high-power fiber technology, which recently has led to millijoule energies and ~10 W average powers from various femtosecond fiber systems. These results indicate that fiber technology has a significant potential to replace conventional solid-state lasers and promises important advantages both for practical use and for achieving high powers and energies. Chirped pulse amplification and different mode-size scaling techniques compose the foundation of this ultrashort-pulse fiber technology. Mode-size scaling can be achieved either by using multimode core fibers, which can produce a diffraction-limited beam at the fiber amplifier output, or by "mode-cleaning" of multimode core fiber output through saturated optical parametric amplification     

Influence of strain on lasing performances of Al-freestrained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at0.78<λ<1.1 μm

The influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers is investigated for the first time over a large emission range of 0.78<λ<1.1 μm. GaAsP and InGaAs are used for tensile and compressive-strained quantum-well layers, respectively, while GaAs and GaInAsP lattice-matched to GaAs are applied for unstrained quantum wells. The laser structures were prepared by using gas-source molecular beam epitaxy, and broad-area and ridge waveguide Fabry-Perot laser diodes were fabricated. This study shows that applying both tensile and compressive strains in the quantum well reduces threshold current density for the Al-free strained-layer quantum-well lasers. However, it was found that the lattice relaxation set a limitation of maximum compressive strain (i.e., maximum lasing wavelength) for the compressive strained InGaAs lasers while the carrier confinement determined the acceptable maximum tensile strain (i.e., minimum lasing wavelength) and lasing performances for the tensile strained GaAsP lasers. Threshold current density as low as 164 A/cm² has been obtained for 1.4% compressive-strained InGaAs-GaInAsP-GaInP lasers having a 12-nm thick quantum well. However, excellent characteristics, such as low threshold current, high efficiency low internal loss, and high output power, have been achieved for the Al-free strained-layer quantum-well lasers     

Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates

Device quality InAs/InGaAs multiple quantum well (MQW) structures were grown on InP substrates by metalorganic vapor phase epitaxy (MOVPE) and applied to lasers emitting at wavelengths longer than 2 mum. InAs/InGaAs MQWs with flat interfaces were obtained by adjusting the growth temperature between 460 degC and 510 degC. The photoluminescence peak wavelength of the MQWs increases from 1.93 to 2.47 mum as the thickness of InAs quantum wells increases from 2 to 7 nm. The structural and optical properties remained almost unchanged even after annealing at 620 degC. For 40-mu m-wide stripe broad-area lasers with 5-nm-thick InAs quantum wells, a lasing wavelength longer than 2.3 mum and an output power higher than 10 mW were achieved under continuous-wave operation at a temperature of 25 degC. These results indicate that InAs/InGaAs MQW structures grown by MOVPE are very useful for the active region of 2 mum wavelength lasers.     

极限温度下的电力电子技术

对近年来电力电子学在各个领域中的深入应用所涌现出的各种新技术进行了综述,其中包括高温环境下的新型碳化硅电力电子器件、各种器件的冷却散热技术、模块化功率电路和热电模块,以及低温环境下的电力电子技术、高温超导体技术等.指出了未来电力电子技术在极限温度下的一些发展趋势.     

High-power ultrafast fiber laser systems

The recent demonstration of rare-earth-doped fiber lasers with a continuous wave output power well above the kilowatt level with diffraction-limited beam quality has proven that fiber lasers constitute a power-scalable solid-state laser concept. To generate intense pulses from a fiber, several fundamental limitations have to be overcome. Nevertheless, novel experimental strategies and fiber designs offer an enormous potential toward laser systems with high average powers and high pulse energies. This paper reviews the challenges, achievements, and perspectives of ultrashort pulse generation and amplification in fibers.     

Miniature erbium:ytterbium fiber Fabry-Perot multiwavelength lasers

We demonstrate stable simultaneous lasing of up to 29 wavelengths in miniature 1- and 2-mm-long Er³⁺:Yb³⁺ fiber Fabry-Perot lasers. The wavelengths are separated by 0.8 (100 GHz) and 0.4 nm (50 GHz), respectively, corresponding to the free spectral range of the laser cavity. The number of lasing wavelengths and the power stability of the individual modes are greatly enhanced by cooling the laser in liquid nitrogen (77 K). The polarization modes and linewidth of each wavelength are measured with high resolution by heterodyning with a local oscillator. The homogeneous linewidth of the Er³⁺:Yb ³⁺ fiber at 77 K is determined to be ~0.5 nm, from spectral-hole-burning measurements, which accounts for the generation of a stable multiwavelength lasing comb with wavelength separations of 0.4 nm     

Injection Locking Bandwidth in 1550-nm VCSELs Subject to Parallel and Orthogonal Optical Injection

The injection locking properties of two commercially available 1550-nm vertical-cavity surface-emitting lasers (VCSELs) have been analyzed experimentally and theoretically in this work. The injection locking diagrams in the plane of frequency detuning versus injected power have been experimentally measured for both devices subject to parallel- and orthogonal-polarized optical injection into the two polarizations of the fundamental mode. Differences in the injection locking bandwidth are experimentally observed when the devices are subject to parallel or to orthogonal-polarized optical injection. A theoretical model based on the Fabry–Perot method has been developed to reproduce the measured stability maps of both 1550-nm VCSELs subject to parallel-polarized optical injection into the parallel polarization lasing mode showing excellent agreement between theory and experiments.      

Two-photon pumping of a random laser

Random lasing originates from pumping disordered materials by high-intensity and high-frequency light. The performance of random lasers is restricted due to the absorption of pumping light within the interfacial layer. The lifetime of optical modes there is short due to the emission of photons to the outside, and it is hard to pump them sufficiently for lasing. The opportunity to excite the modes far from the material surface using two-photon absorption is investigated within the diffusion model. The authors show that lasing requires lower pump power for the two-photon pumping mechanism under conditions of negligible absorption of the emitted light. Experimental implications and restrictions are discussed.     

High-Power Fiber Lasers and Amplifiers Based on Multimode Interference

In this paper, high-power fiber lasers and amplifiers based on multimode interference (MMI) in active large-core multimode optical fibers are proposed and their properties are investigated. Experimental results and simulations indicate that such fiber lasers and amplifiers are promising candidates for high-power miniature solid-state lasers. Utilization of the MMI leads to remarkable spectral and spatial features of fiber lasers and amplifiers such as generation of high-power diffraction-free beams.      

Diode arrays, crystals, and thermal management for solid-statelasers

We summarize our efforts in the development of solid-state lasers, including the laser diode arrays, pump light delivery, approaches to thermal management, and novel gain media. Our interests are in developing unique solid-state lasers, including those operating at higher powers, offering less common wavelengths, and having other specialized features. In this paper, we discuss high-power Tm:YAG and Yb:YAG lasers. The gas cooled slab laser concept using Yb:S-FAP, and side-pumped Er:YAG and Cr:ZnSe lasers. We address the optical and thermal physics of these systems and also mention several additional gain media that have the potential of offering unique performance characteristics: Ce:LiSAF, APG-2 laser glass, Dy:LaCl₃, and Yb:BCBF     

Fiber-Laser-Pumped Er:YAG Lasers

Hybrid fiber-laser-pumped solid-state lasers exploit high-power cladding-pumped fiber lasers for direct (in-band) pumping of a crystal-based solid-state laser to reduce heating in the laser crystal, and hence allow scaling to higher power in both continuous-wave (CW) and pulsed modes of operation. In this paper, we briefly review the attractions of the hybrid laser approach for generation of output in the ~ 1.6 mum wavelength regime and consider the main design considerations for efficient operation of hybrid lasers based on Er:YAG in both CW and pulsed modes of operation. Examples of hybrid Er:YAG lasers, pumped by Er,Yb codoped fiber lasers at 1532 nm, with CW output powers up to 60 W at 1645 nm and 31 W at 1617 nm and slope efficiencies of 80% and 47% with respect to incident pump power, respectively, are described. In Q-switched mode of operation, pulse energies up to 30.5 mJ were obtained, limited by coating damage. Finally, the prospects for further increase in output power and improvement in overall performance in CW and Q-switched modes of operation will be discussed.     

Progress in GaN-based quantum dots for optoelectronics applications

Our recent progress in GaN-based quantum dots (QDs) for optoelectronics application is discussed. First, we discussed an impact of the use of GaN-based QDs on semiconductor lasers, showing theoretically that reduction of threshold current by using the QDs in GaN-based lasers is much more effective compared to those in GaAs-based or InP-based lasers. Then discussed are our growth technology including self-assembling growth of InGaN QDs on sapphire substrates by atmospheric-pressure metalorganic chemical vapor deposition. Using the self-assembling growth technique, we have succeeded in obtaining lasing action in an edge-emitting laser structure with the InGaN QDs embedded in the active layer under optical excitation with the emission wavelength of 410 nm. Toward UV light wavelength emission, we have recently established self-assembled GaN QDs of high quality and high density under very low V-III ratio. We clearly observed two photoluminescence peaks from both the QDs and the wetting layer at room temperature, which clearly shows the nanostructures are formed with the Stranski-Krastanow growth mode.     

Strain-compensated GaInNAs structures for 1.3-/spl mu/m lasers

GaAs-based dilute nitride lasers are potential light sources for future optical fiber communication systems at the wavelength of 1.3 /spl mu/m. In this paper we discuss the results of studies of optimization of the growth conditions and active regions of the GaAs-based lasers. To this end, a series of samples were grown using the molecular beam epitaxy technique. The active regions consisted of quantum wells, strain-compensating layers, and strain-mediating layers. They were characterized by photoluminescence and double crystal X-ray diffraction methods. The optical properties were very much affected by a choice of growth conditions, details of the quantum wells, and postgrowth thermal treatment. Preliminary results on diode-pumped vertical-cavity surface emitting lasers, which launch light power of 3.5 mW coupled into a single-mode fiber, are also presented.     

Design and characteristics of high-power (>0.5-W CW)diode-pumped vertical-external-cavity surface-emitting semiconductorlasers with circular TEM00 beams

We describe the design, fabrication, and measured characteristics of the high-power optically pumped-semiconductor (OPS) vertical-external-cavity surface-emitting lasers (VCSELs). Using diode laser pumping, we have recently demonstrated operation of such lasers, which for the first time generate high (watt-level) power and a circular Gaussian beam directly from a semiconductor laser. These OPS-VECSELs have a strain-compensated multi-quantum-well InGaAs-GaAsP-GaAs structure and operate CW near λ~1004 nm with output power of 0.69 W in TEM ₁₁ mode, 0.52 W in TEM₀₀ mode and 0.37 W coupled to a single-mode fiber. With multiple pump and gain elements, OPS-VCSEL technology is scalable to the multiwatt power levels. Such lasers will prove useful in a variety of applications requiring compact and efficient sources with high-power output in a single-mode fiber or with diffraction-limited beam quality     

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 μm

This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain and low losses. Continuous-wave (CW) room-temperature lasing operation on ground state of cavity length as short as 200 mum has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm² per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T₀ larger than 100 K for broad-area (BA) lasers, and of 80 K for single-transverse-mode lasers in the temperature range between 25degC and 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) lasers are also demonstrated for the first time, exhibiting a side-mode suppression ratio (SMSR) as high as 45 dB. Such DFB lasers allow the first floor-free 10-Gb/s direct modulation for back-to-back and transmission over 16-km standard optical fiber. In addition, novel results are given on gain, noise, and four-wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time-jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step toward the application of QD lasers and amplifiers to the field of optical fiber communications     

Fan Control for the Glass Industry Using Static Induction Motor Drives

The glass industry uses large fans requiring high horse- power drives in several glassmaking processes. For example, forming fans are used to manufacture fiber glass insulation and mold cooling fans are employed in the manufacture of glass containers. Substantial electrical energy savings can be achieved using adjustable speed fan control rather than damper control. Other noneconomic benefits also accrue to the user of solid-state drives for these applications.     

Linearization: reducing distortion in power amplifiers

This article discusses techniques for the cancellation of distortion (linearization) in power amplifiers. Different methods of linearization are introduced and compared. The linearization of solid-state power amplifiers (SSPAs), traveling-wave tube amplifiers (TWTAs) and klystron power amplifiers (KPAs) are considered. Although the focus of this article is on power amplifiers, many of the techniques are applicable to other components such as mixers, low-noise amplifiers, and even photonic components, such as lasers and optical modulators