Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes

This article describes the fabrication of polymer structures with lateral dimensions in the sub-micron regime using hard X-rays (λ_c ≈ 0.4 nm) from the electron storage ring ANKA. Spincoated polymethylmethacrylate (PMMA) grades have been analyzed with respect to development rates and contrast. The contrast has been determined to be constant over a wide dose regime but rapidly decreases for dose values below 1 kJ/cm³. Films with a thickness from 2 to 11 μm have been patterned using a high resolution X-ray mask consisting of 2 μm thick gold absorbers on a suspended 1 μm thick silicon nitride membrane. The fabrication of sub-micron X-ray lithography structures with feature sizes down to 400 nm is confined by the mechanical parameters of the resist material and the process conditions. Surface tension after development limits the achievable aspect ratio of isolated pillars and walls, depending on the actual resist height. PMMA structures have been successfully used as template for electroplating of 1 μm thick gold to demonstrate the fabrication capability of sub-micron scale metal parts.     

Nano encoders based on vertical arrays of individual carbon nanotubes

Linear encoders for nanoscale position sensing based on vertical arrays of individual carbon nanotubes are presented. Vertical arrays of single multi-walled carbon nanotubes (MWNTs) are realized using a combination of electron beam lithography (EBL) and plasma-enhanced chemical vapour deposition growth. EBL is used to define 50- to 150-nm nickel catalyst dots at precise locations on a silicon chip. Precise control of the position, density and alignment of the tubes has been achieved. Aligned nanotube arrays with spacing varying from 250 nm to 25 μm are realized. Field emission properties of the array are investigated inside a scanning electron microscope equipped with a 3-d.o.f. nanorobotic manipulator with nanometer resolution functioning as a scanning anode. With this scanning anode and the single MWNT array, a nano encoder is investigated experimentally. Vertical position is detected by the change in emission current, whereas the horizontal position of the scanning anode is sensed from the emission distribution. A resolution of 98.3 nm in the vertical direction and 38.0 nm (best: 12.9 nm) in the lateral direction has been achieved.     

Properties of M-AFM probe affected by nanostructural metal coatings

In order to develop a new structure microwave probe, the fabrication of the atomic force microscope (AFM) probe on a GaAs wafer was studied and characteristics of the AFM probe with different nanostructural metal coating were evaluated in order to understand the performance of the probe for the topography of materials and the propagation of microwave signals. A waveguide was introduced by the sputtering and the electron beam (EB) evaporation technique on the top and bottom surfaces of the GaAs AFM probe with Au or Al film. The open structure of the waveguide at the tip of the probe was introduced by using focused ion beam fabrication. It was found that the fabricated probes coated with the Au or Al film have nanometer order resolution. Moreover, using the Au-coating probe formed by the EB evaporation technique, microwave emission was detected successfully at the tip of the probe by approaching an Au film sample.     

Fabrication of antiscatter grids and collimators for X-ray and gamma-ray imaging by lithography and electroforming

Creatv MicroTech has developed unique fabrication techniques to make high precision, high-aspect-ratio metal microstructures to custom specifications. A lithography based fabrication method permits precise fabrication of various microstructures. Collimators and antiscatter grids with continuous, smooth, thin, parallel or focused septa have been fabricated using deep X-ray and optical lithography, combined with metal electroforming. Microfabrication of high-aspect-ratio structures, especially of relatively large areas, presents many challenges: specialized mask design and X-ray mask fabrication; resist preparation, optimal exposure parameters, post-exposure processing, electroforming, polishing, and final assembly. Here, we present microstructures of various designs that we fabricated and describe the challenges that had to be overcome.     

Silicon micromachined hollow microneedles for transdermal liquid transport

This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different, lithography-defined tip curvature. In this study, the length of the needles varied between 150 and 350 micrometers. The widest dimension of the needle at its base was 250 /spl mu/m. Preliminary application tests of the needle arrays show that they are robust and permit skin penetration without breakage. Transdermal water loss measurements before and after microneedle skin penetration are reported. Drug delivery is increased approximately by a factor of 750 in microneedle patch applications with respect to diffusion alone. The feasibility of using the microneedle array as a blood sampler on a capillary electrophoresis chip is demonstrated.     

Design and batch fabrication of probes for sub-100 nm scanningthermal microscopy

A batch fabrication process has been developed for making cantilever probes for scanning thermal microscopy (SThM) with spatial resolution in the sub-100 nm range. A heat transfer model was developed to optimize the thermal design of the probes. Low thermal conductivity silicon dioxide and silicon nitride were chosen for fabricating the probe tips and cantilevers, respectively, in order to minimize heat loss from the sample to the probe and to improve temperature measurement accuracy and spatial resolution. An etch process was developed for making silicon dioxide tips with tip radius as small as 20 nm. A thin film thermocouple junction was fabricated at the tip end with a junction height that could be controlled in the range of 100-600 nm. These thermal probes have been used extensively for thermal imaging of micro- and nano-electronic devices with a spatial resolution of 50 nm. This paper presents measurement results of the steady state and dynamic temperature responses of the thermal probes and examines the wear characteristics of the probes     

3D Optical microstructure fabrication and its bonding to micro IR detector using elastomeric polymer

This paper describes polidimethylsiloxane(PDMS) based bonding for assembly of microstructure device, an UV lithography applications for fabricating a 3-dimensional (3D) feed-horn-shaped structure mold array, and obtaining parallel light by using a mirror-reflected parallel-beam illuminator (MRPBI) system. A 3D feed-horn-shaped micro-electro-mechanical systems (MEMS) antenna has some attractive features for array applications, which can be used to improve microbolometer performance and to enhance the optical efficiency for thin film transistor-liquid crystal display (TFT-LCD) and other display devices but currently, MEMS technology has faced many difficulties in the fabrication of a 3D feed-horn-shaped MEMS antenna array itself. The purpose of this paper is to propose a new fabrication method to realize a 3D feed-horn-shaped MEMS antenna array by using a mirror-reflected parallel-beam illuminator (MRPBI) System with a very slowly rotated, inclined x-y-z stage. With a conventional UV lithography apparatus, it is very difficult to fabricate high-aspect-ratio structures (HARS) because a typical UV lithography apparatus cannot produce perfectly parallel light. From a theoretical analysis, a columnar illuminator over 6 m in height is required to achieve parallel light, but generally a laboratory height is not 6 m. Also, a novel method of lithography was tried to make a 3D structure array by exposing a planar wafer to the generated parallel light and rotating an inclined x-y-z stage at an ultra-slow rate. An optimization of the 3D structure array can be achieved by simulating a 3D feed-horn MEMS antenna. The feasibility of fabricating both a 3D feed horn MEMS antenna and assembly of detector with 3D feed-horn MEMS antenna was demonstrated. As a result, it seems possible to use a 3D feed-horn-shaped MEMS antenna to improve microbolometer performance and to fabricate several optical microstructure applications.The authors wish to acknowledge that this paper is the result of research accomplished with the financial support of the Intelligent Microsystems Center, Seoul, Korea, which is carrying out one of the 21st centurys New Frontier R&D Projects sponsored by the Korea Ministry of Science & Technology.     

A novel fabrication method of micro-needle mold by using the micro-lens mask through contact printing

This study presents a novel and precision process for fabricating a microneedle mold. The process includes a microlens array mask with contact printing in ultraviolet lithography. This method can precisely control the geometric profile of a microneedle array without the use of an etching process. The micro tapered cone microneedle mold utilizes the microlens array mask with geometrical optics. The light passes through the microlens and a hole in a Cr film of a mask, and then radiates onto the photoresist film. The light transmitted through the microlens has an aligned focal point on the photoresist film. An optical system is set up to characterize the optical performance of the machined microneedle, and then compared with theoretical data. The results show that the length of the microneedle from the experiment is close to the derived results. Moreover, the length of the microneedle is significantly influenced by the height and diameter of the microlens. Therefore, this method could also simplify the process and reduce the time needed for the fabrication of the microneedle. The micro cone microneedle has have great potential in the area of the drug delivery applications.     

Development of 2D Microdisplay Using an Integrated Microresonating Waveguide Scanning System

Our research team has developed a 2D micro image display device that can potentially overcome the size reduction limits while maintaining the high-image resolution and field of view obtained by mirror-based display systems. The basic design of the optical scanner includes a microfabricated SU-8 cantilever waveguide that is electromechanically deflected by a piezoelectric actuator. From the distal tip of the cantilever waveguide, a light beam is emitted and the direction of propagation is displaced along two orthogonal directions. The waveforms for the actuator and the LED light modulation are generated and controlled using a field programmable gate array. Our recent study is an update to the previously-reported mechanical scanner, replacing the hand-built PZT scanner and fiber waveguide with a microfabricated system incorporating aerosol-deposited PZT thin film and a polymeric SU-8 wave guide. In this article, we report on the design and fabrication of a prototype miniaturized 2D scanner, discuss optical and mechanical the modeling of the system's properties and present the experimental results.     

Direct Fabrication of Nanoscale Light Emitting Diode on Silicon Probe Tip for Scanning Microscopy

We have fabricated a silicon microprobe integrated with a nanometer-sized light emitting diode (Nano-LED) on the tip. This paper describes the fabrication procedure and preliminary topographic testing results. The silicon probe with electrode pattern was made by wet-etching a silicon-on-insulator wafer using oxide as the mask. Subsequently, the probe tip was cut using a focused ion beam (FIB) to form a 150 nm-wide gap. Semiconductor nanoparticles (CdSe/ZnS core-shell nanoparticles) were electrostatically trapped and excited within the electrode gap made on the probe tip. The LED-tip is approximately 150 nm 150 nm. The nano-LED light intensity and current were measured as a function of the driving voltage up to 25 V. In addition to the electroluminescence peaks from the CdSe particles, possible emission from silicon dioxide doped in the FIB milling process was also observed in the measured spectra. Basic mechanical characteristics of the silicon probe were measured by mounting the probe on a tuning fork in a standard near-field scanning optical microscopy (NSOM) set up. It was observed that the drag force reduces the probe oscillation as the vibrating tip approached the near-field of the sample surface. The topographic images of a chromium test pattern on a glass substrate were successfully acquired by keeping the probe tip within roughly 5 nm from the sample surface. Although the probe tip shape and the location of the Nano-LED are yet to be further optimized before realizing near-field optical scanning experiment, the result showed its great promise as a new type of NSOM tip with the ldquoon-proberdquo light-source.     

Fabrication of high aspect ratio nano gratings using SR lithography

In this paper, the fabrication technique for high-aspect-ratio diffractive optical element (DOE) is introduced. The 500 nm-width and 1,000 nm-width line-and-space pattern has been successfully fabricated. It was fabricated by synchrotron radiation (SR) lithography for the application of nano gratings, and poly-methylmethacrylate (PMMA) was used as X-ray resist. The nanoscale grating with the aspect ratio of 4.4 and 2.2 was achieved. So far, there are a number of reported techniques for fabrication of DOEs yet the height of those gratings is not sufficient. Therefore, we have attempted to investigate the fabrication of high-aspect-ratio nano gratings by a high-resolution X-ray lithography using SR source at Ritsumeikan University, Japan. Nevertheless, the evaluation of various factors influencing the high-aspect-ratio structure fabricated by our recommended technique is discussed. So far the fabricating process, such as, proximity gap of exposure, the exposure dosage, and the development time have been optimized to fabricate the gratings.     

UV-LIGA interferometer biosensor based on the SU-8 optical waveguide

SU-8 resist was used as a core/cladding waveguide material to fabricate a Mach–Zehnder interferometer (MZI) for biochemical sensing. The refractive index of the SU-8 resist was fine-tuned with a Δn of 0.004 for single-mode transmission. The UV lithography processes of the SU-8 resist were also optimized to pattern the high resolution (1 μm) and high aspect ratio (A_R = 6) Y-branch structure of the optical interferometer. Optical measurements reveal that the SU-8 MZI chip can efficiently transmit the NIR laser (λ = 1310 nm) with a total loss less than 6 dB. When one branch of the MZI is in contact with the analyte, the interfered intensity stabilizes after the soaking time exceeds 5 min. NaCl solution with a concentration of 10⁻⁹ g/l can be detected using the SU-8 MZI chip. In the future, the polymer MZI chip can be mass-produced by molding process (or the LIGA process). The low-cost, label-free, real-time and high-sensitivity MZI chip will benefit many applications related to biological, environmental and industrial detection.     

Fabrication of microchannels in negative resist

Microchannels are very important components of the micro-fluidic systems. A novel method for fabrication of microchannels is presented in this paper. The microstructures for fluidic application is constructed by UV or X-ray lithography in positive resist and closed in crosslinked negative resist. This process can be used to fabricate high precise, complex microchannels due to the high precise microstructures of positive photoresist and the complex three-dimensional lithography. The optical transparent microchannels are suitable for optical measurements of the fluid flow and the profile of microchannels.     

Arrays of monocrystalline silicon micromirrors fabricated using CMOS compatible transfer bonding

In this paper, we present CMOS compatible fabrication of monocrystalline silicon micromirror arrays using membrane transfer bonding. To fabricate the micromirrors, a thin monocrystalline silicon device layer is transferred from a standard silicon-on-insulator (SOI) wafer to a target wafer (e.g., a CMOS wafer) using low-temperature adhesive wafer bonding. In this way, very flat, uniform and low-stress micromirror membranes made of monocrystalline silicon can be directly fabricated on top of CMOS circuits. The mirror fabrication does not contain any bond alignment between the wafers, thus, the mirror dimensions and alignment accuracies are only limited by the photolithographic steps. Micromirror arrays with 4/spl times/4 pixels and a pitch size of 16 /spl mu/m/spl times/16 /spl mu/m have been fabricated. The monocrystalline silicon micromirrors are 0.34 /spl mu/m thick and have feature sizes as small as 0.6 /spl mu/m. The distance between the addressing electrodes and the mirror membranes is 0.8 /spl mu/m. Torsional micromirror arrays are used as spatial light modulators, and have potential applications in projection display systems, pattern generators for maskless lithography systems, optical spectroscopy, and optical communication systems. In principle, the membrane transfer bonding technique can be applied for integration of CMOS circuits with any type of transducer that consists of membranes and that benefits from the use of high temperature annealed or monocrystalline materials. These types of devices include thermal infrared detectors, RF-MEMS devices, tuneable vertical cavity surface emitting lasers (VCSEL) and other optical transducers.     

Process research of high aspect ratio microstructure using SU-8 resist

SU-8 is a negative, epoxy type, near-UV photoresist. This resist has been specifically developed for ultrathick, high-aspect-ratio MEMS-type applications using standard lithography equipment. However, in practice, SU-8 has shown to be very sensitive to process parameter variation. The orthogonal array was used in our experiments in order to improve the lithography quality and analyze the interaction among the parameters. The analyses show that the interaction between the exposure dose and post exposure bake has played an important role in adhesion between SU-8 resist and the substrate. The proposed process conditions are given. The output structure has straight sidewall profile, fine line and good space resolution. The aspect ratio is larger than 20. Moreover, several metallic films are used as substrates. The Ti film with oxidation treatment was found to have the strongest adhesion to the resist. The result will help to open possibilities for low-cost LIGA-type process for MEMS applications.     

Membrane microcantilever arrays fabrication with PZT thin films for nanorange movement

Lead zirconate titanate (PZT) piezoelectric thin films have been prepared by sol-gel method to fabricate microcantilever arrays for nano-actuation with potential applications in the hard disk drives. In order to solve the silicon over-etching problem, which leads to a low production yield in the microcantilever fabrication process, a new fabrication process using DRIE etching of silicon from the front side of the silicon wafer has been developed. Silicon free membrane microcantilevers with PZT thin films of 1 μm in thickness have been successfully fabricated with almost 100% yield by this new process. Annealing temperature and time are critical to the preparation of the sol-gel PZT thin film. The fabrication process of microcantilever arrays in planar structure will be presented. Key issues on the fabrication of the cantilever are the compatible etching process of PZT thin film and the compensation of thin film stress in all layers to obtain a flat multi-layer structure.     

Experimental considerations and fabrication analysis of surface micromachined RF NEMS switch

This paper presents fabrication and issues related to fabrication of RF NEMS switch using surface micromachining approach. The switch has been fabricated using electron beam lithography. Lift off process has been used in achieving patterned metal layers. Fabrication process has been optimized by overcoming different issues like proximity effect, field stitching. A high resolution 20 nm gap has been achieved during fabrication. Dose-shape correction method has also been used to achieve desired patterns. A four metal layer fabrication process has been developed for fabrication of RF NEMS switch. Simulation and measured results are also presented.     

X-ray zone plates with 25 aspect ratio using a 2-μm-thick ultrananocrystalline diamond mold

Hard X-ray phase zone plates are focusing optics used for X-ray microscopes at synchrotron radiation facilities. The resolution is determined by the outer-most zone width (OZW) and modern lithographic techniques are capable of patterning OZW less than 100 nm. Efficiency of a phase zone plate will peak when the zones have a thickness that provides a π-phase shift to the X-rays. Thus, a hard X-ray zone plate with ideal efficiency and sub-100-nm resolution requires fabricating high-aspect-ratio, dense-packed structures in materials suitable for exposure to synchrotron radiation. The fabrication method implemented involves an electroforming mold process where a top resist layer is lithographically patterned and used for pattern transfer into a bottom layer which acts as the electroform mold. The resulting mold is filled with Au by electroplating, and afterwards the mold is not removed but remains in place for mechanical support. Ultrananocrystalline diamond (UNCD) was used as the mold layer. UNCD is deposited by hot-filament chemical vapor deposition with well-controlled stress and thickness up to 2 μm. The top resist layer is hydrogen silsesquioxane, which is a high-contrast electron beam lithography resist and resistant to the oxygen reactive ion etching required for UNCD pattern transfer. Using this fabrication method, we successfully produced zone plates with OZW down to 80 nm and an aspect ratio up to 25 for a thickness of 2 μm. The efficiency of several fabricated zone plates were measured, demonstrating their functionality.     

Fabrication of intermediate mask for deep x-ray lithography

 This paper presents the fabrication of intermediate x-ray mask for deep x-ray lithography. In order to have working mask with absorbers thickness larger than 10 μm, the intermediate mask should have absorbers of 0.7 μm in thickness. To demonstrate intermediate mask fabrication, x-ray zone plates are fabricated on the 1.2 μm low-stress silicon-rich silicon nitride (SiN_x) membrane with the tri-layer Chromium-Tungsten-Chromium (Cr–W–Cr) as the x-ray absorbers. The chromium layers both 200 angstroms are used as adhesion and for stress relief. The SiN_x film is deposited with low pressure chemical vapor deposition (LPCVD) and the free standing membrane are formed by KOH silicon backside etching. With the e-beam lithography and reactive ion etching, width of 0.8 μm of outmost zone of the x-ray zone plates has been achieved on the membrane. The scanning electron microscopy (SEM) images of the x-ray zone plates and pictures of intermediate masks are demonstrated. Received: 25 August 1997/Accepted: 3 September 1997     

激光干涉光刻工艺开发与应用研究

成功开发出以劳厄干涉为基础的激光干涉光刻系统与工艺,该工艺可在大面积范围内加工二维周期性图形,非常适合于生产光电子器件和微电子器件的周期性结构。通过实验研究了使用该工艺加工表面纳米结构的流程,对比了几种光刻胶在该工艺中的性能特点。该工艺不需要掩模、昂贵的短波长光源和成像透镜。初步实验结果表明:该工艺可以生产大面积亚微米周期的光栅、点阵以及锥形结构,为激光干涉光刻加工纳米结构的后续工作奠定了基础。