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1.
This paper describes mechanical properties of submicron thick diamond-like carbon (DLC) films used for surface modification in MEMS devices. A new compact tensile tester operating under an atomic force microscope (AFM) is developed to measure Young's modulus, Poisson's ratio and fracture strength of single crystal silicon (SCS) and DLC coated SCS (DLC/SCS) specimens. DLC films with a thickness ranging from 0.11 /spl mu/m to 0.58 /spl mu/m are deposited on 19-/spl mu/m-thick SCS substrate by plasma-enhanced chemical vapor deposition using a hot cathode penning ionization gauge discharge. Young's moduli of the DLC films deposited at bias voltages of -100 V and -300 V are found to be constant at 102 GPa and 121 GPa, respectively, regardless of film thickness. Poisson's ratio of DLC film is also independent of film thickness, whereas fracture strength of DLC/SCS specimens is inversely proportional to thickness. Raman spectroscopy analyses are performed to examine the effect of hydrogen content in DLC films on elastic properties. Raman spectra reveal that a reduction in hydrogen content in the films leads to better elastic properties. Finally, the proposed evaluation techniques are shown to be applicable to sub-micron thick DLC films by finite element analyses.  相似文献   

2.
Wafer-level mechanical characterization of silicon nitride MEMS   总被引:2,自引:0,他引:2  
The mechanical and physical properties of silicon nitride thin films have been characterized, particularly for their application in load-bearing MEMS applications. Both stoichiometric (high-stress) and silicon-rich (low-stress) films deposited by LPCVD have been studied. Young's modulus, E, has been determined using conventional lateral resonators and by bulge testing of membranes, and tensile strength has been determined using a specially designed microtensile specimen. All microdevices have been fabricated using standard micromachining. We have also measured the thermal expansion coefficient of stoichiometric silicon nitride. Our best estimate of E is 325/spl plusmn/30 GPa for stoichiometric and 295/spl plusmn/30 GPa for silicon-rich silicon nitride. The average tensile strength for the stoichiometric material is 6.4/spl plusmn/0.6 GPa, while that for the silicon-rich material is 5.5/spl plusmn/0.8 GPa; the burst strength of membranes of the stoichiometric material is 7.1/spl plusmn/0.2 GPa.  相似文献   

3.
This paper describes a laterally deflecting micromachined device that offers high sensitivity and wide dynamic range to electronically monitor the thermal expansion coefficient, tensile and compressive residual strain and Young's modulus of microstructural materials, as well as the temperature dependence of these properties. The device uses sidewall capacitance between interdigitated tines to sense displacement caused by the release of residual stress in a bent-beam suspension. Electrostatic force is used to obtain load-deflection profiles. The suspensions and tines are arranged such that output is a differential readout, immune to common mode parasitic capacitance. Analytical and numerical modeling results are presented and the device concept is verified by three different fabrication approaches using polysilicon and nickel as structural materials. Measured values of residual strain, thermal expansion and Young's modulus are very consistent with measurements taken by other approaches and those reported previously. For example, the residual strain in certain electrodeposited Ni structures was tracked from 68.5 microstrain at 23/spl deg/C to -420 microstrain at 130/spl deg/C, providing an expansion coefficient of 8.2 ppm/K; the best fit Young's modulus provided by the device was 115 GPa.  相似文献   

4.
T-shape, LPCVD silicon nitride cantilevers are fabricated to determine Young's modulus and fracture strength of silicon nitride thin films at room and cryogenic temperatures. A helium-cooled measurement setup is developed and installed inside a focused-ion-beam (FIB) system. A lead-zirconate-titanate (PZT) translator powered by a function generator and a dc voltage is utilized as an actuator, and a silicon diode is used as a temperature sensor in this setup. Resonant frequencies of identical cantilevers with different "milling masses" are measured to obtain thickness and Young's modulus of the silicon nitride thin films, while a bending test is performed to obtain fracture strength. From the experiment, the average Young's modulus of low-pressure chemical-vapor deposition (LPCVD) silicon nitride thin films varies from 260.5 GPa at room temperature (298 K) to 266.6 GPa at 30 K, and the average fracture strength ranges from 6.9 GPa at room temperature to 7.9 GPa at 30 K. The measurement setup and technique presented here can be used to characterize the mechanical properties of different MEMS materials at cryogenic temperatures.  相似文献   

5.
Metal multi-user MEMS processes (MetalMUMPs) offered by MEMSCAP provide a 20 μm thick electroplated nickel film suitable for constructing micro RF tunable capacitors, RF inductors, relays, switches, etc. Currently the Young's modulus and the residual stress gradient of the MetalMUMPs nickel film have not been characterized. In this paper the resonance method is used to characterize the Young's modulus of the MetalMUMPs nickel film. The characterization results show that the nickel film has a Young's modulus of 155–164 GPa with an average of 159 GPa. A stress gradient induced free beam mechanism is proposed in this paper to characterize the residual stress gradient in the MetalMUMPs nickel film. Characterization results show that the residual stress in the electroplated nickel film has a gradient across the film thickness of −5.49 MPa/μm to −4.30 MPa/μm with the average of −4.72 MPa/μm. The residual stress change from the bottom surface to the top surface of the nickel film is −97.7 MPa. The Young's modulus and residual stress gradient of the MetalMUMPs nickel film obtained in this paper provide MetalMUMPs users an important reference for designing, optimizing and analyzing suspended nickel structures. The stress gradient induced free beam mechanism proposed in this paper provides a method of characterizing negative residual stress gradient in thin films without using trenches or through-wafer holes.  相似文献   

6.
Characterizing the mechanical properties of metal thin films is critical for the design and fabrication of metal microelectromechanical systems and integrated circuit devices. This paper focuses on wafer-level determination of the mechanical behavior of sputtered aluminum and nickel thin films, using a variety of measurement techniques. Elastic moduli have been determined in devices fabricated with standard micromachining techniques using bulge testing of square diaphragms and lateral resonator structures. We find a Young's modulus of ~70 GPa for Al and ~200 GPa for Ni, in agreement with data for the bulk metals. Using pressurize/depressurize cycles, the load-deflection curves of the membranes have also been determined, and in conjunction with finite element simulations, were used to determine the yield strength and fracture strength of these films. Residual stresses in the films have also been investigated using wafer curvature, bulge testing, and X-ray diffraction. The merits of each measurement technique are discussed.  相似文献   

7.
This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mum were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 plusmn 47 and 201 plusmn 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 plusmn 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 plusmn 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 plusmn 0.88 and 3.16 plusmn 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mum-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mum-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws. [2007-0191].  相似文献   

8.
The importance of service environment to the fatigue resistance of n/sup +/-type, 10 /spl mu/m thick, deep-reactive ion-etched (DRIE) silicon structural films used in microelectromechanical systems (MEMS) was characterized by testing of electrostatically actuated resonators (natural frequency, f/sub 0/, /spl sim/40 kHz) in controlled atmospheres. Stress-life (S-N) fatigue tests conducted in 30/spl deg/C, 50% relative humidity (R.H.) air demonstrated the fatigue susceptibility of silicon films. Further characterization of the films in medium vacuum and 25% R.H. air at various stress amplitudes revealed that the rates of fatigue damage accumulation (measured via resonant frequency changes) are strongly sensitive to both stress amplitude and, more importantly, humidity. Scanning electron microscopy of high-cycle fatigue fracture surfaces (cycles to failure, N/sub f/>1/spl times/10/sup 9/) revealed clear failure origins that were not observed in short-life (N/sub f/<1/spl times/10/sup 4/) specimens. Reaction-layer and microcracking mechanisms for fatigue of silicon films are discussed in light of this empirical evidence for the critical role of service environment during damage accumulation under cyclic loading conditions.  相似文献   

9.
A plane-strain load-deflection model for long plates clamped to a rigid support is developed. The analytical model describes the nonlinear deflection of plates with compressive or tensile residual stress and finite flexural rigidity under uniform load. It allows for the extraction of the residual stress and plane-strain modulus of single-layered thin films. Properties of compressively and weakly prestressed materials are extracted with an accuracy achieved previously only with tensile samples. Two approximations of the exact model are derived. The first reduces the plates to membranes by neglecting their flexural rigidity. Considerable errors result from this simplification. The second approximation provides an exact expression for the linear plate response. Using the model, mechanical properties were extracted from two plasma-enhanced chemical-vapor deposition (PECVD) silicon nitride films with weakly tensile and compressive prestress, respectively. Measured residual stresses are 1.3±3.8 and -63±12.4 MPa, respectively. Corresponding plane-strain moduli are 134.4±3.9 and 142±2.6 GPa, respectively  相似文献   

10.
The measured performance of a column-type microthermoelectric cooler, fabricated using vapor-deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ with an average thickness of 4.5 /spl mu/m, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130/spl deg/C, are -74 /spl mu/V/K and 3.6/spl times/10/sup -5/ /spl Omega/-m (n-type, power factor of 0.15 mW/K/sup 2/-m), and 97 /spl mu/V/K and 3.1/spl times/10/sup -5/ /spl Omega/-m (p-type, power factor of 0.30 mW/K/sup 2/-m). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 /spl mu/m is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The average cooling achieved is about 1 K. Fabrication challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector patterning and deposition.  相似文献   

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