共查询到18条相似文献,搜索用时 109 毫秒
1.
简单介绍了PVD溅射系统和溅射原理.实验分析了PVD溅射技术在微晶玻璃基片溅射沉积Cu膜时,沉积速率随相关工艺参数变化而变化的几点规律.给出了用PVD溅射技术沉积的Cu膜的表面形貌(AFM)图和显微镜照片. 相似文献
2.
3.
4.
5.
利用离子束溅射镀膜技术,在17-4PH不锈钢弹性衬底上直接溅射SiO2绝缘膜和NiCr薄膜,制备了一种新型的压力传感器用合金薄膜.分析了热处理工艺对合金薄膜电阻稳定性的影响,对NiCr薄膜电阻进行了4种热处理工艺,获得了使合金薄膜电阻长期稳定的热处理工艺参数:在SiOx和N2的保护下,673K退火1h,并在473K下保温24h.用该工艺能制备适应各种恶劣环境的高精度压力传感器. 相似文献
6.
7.
实现了一种新型的基于硅IC工艺的微波铁氧体集成薄膜变压器.铁氧体薄膜采用射频磁控溅射法制备,SEM观察了SiO2层上铁氧体膜的表面形貌,表明薄膜容易开裂;能谱仪对薄膜成分的分析表明铁氧体薄膜与SiO2层和Al膜附着性差.通过溅射工艺参数及增加热处理等工艺初步解决了以上存在的薄膜制备工艺与IC工艺之间的兼容性问题.采用标准硅基IC工艺设计和制备了这种新型结构的薄膜变压器,对一组薄膜变压器样品的实验参数在20~210 MHz的频率范围内作了测试.测试结果表明:对于设计的匝数比为1的薄膜变压器,在90~210 MHz的频率范围内能获得最高为79%的变压比和良好的波形传输能力. 相似文献
8.
9.
在现有的粉末烧结型SnO2基气敏传感器基础上研制了薄膜型SnO2基气体传感器,以抛光的丽热石英玻璃为基片,真空磁控溅射50~70nm厚度的SnO2薄膜,在SnO2薄膜上分别溅射不连续的ZnO、Al2O3、CeO2、InO2等薄膜,传感器背面溅射30μm的Ni80Cr20电阳合金作为传感器加热电阻,用薄膜热电偶测量传感器工作温度。测试了不同的复合瞑对传感器灵敏度和选择性的影响,并对传感器的吸附与解吸速度进行了测试,薄嗅传感器达到相同灵敏度所需的工作温度比粉末烧结型传感器下降100~150℃,吸附解吸速度比粉末烧结型快。 相似文献
10.
11.
12.
13.
14.
Masaharu Terauchi Jun Hashimoto Hikaru Nishitani Yusuke Fukui Michiko Okafuji Hitoshi Yamashita Hiroshi Hayata Takafumi Okuma Hitoshi Yamanishi Mikihiko Nishitani Masatoshi Kitagawa 《Journal of the Society for Information Display》2008,16(12):1195-1201
Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process. 相似文献
15.
XPS分析表明,用直流溅射法制备的掺钯薄膜气敏元件,钯的溅射率比锡高,在薄膜中钯的含量高于靶中的含量、和纯SnO_2薄膜相比,此元件对还原性气体有很高的灵敏度,尤其对H_2和CH_4.对于该元件的气敏机理也作了初步探讨. 相似文献
16.
J. RaviPrakash A.H. McDaniel M. Horn L. Pilione P. Sunal R. Messier R.T. McGrath F.K. Schweighardt 《Sensors and actuators. B, Chemical》2007,120(2):439-446
The effect of thin film morphology, carbon monoxide (CO) and resistor geometry on the response of hydrogen sensitive thin film palladium resistors has been investigated. Films with two different morphologies were fabricated by DC magnetron sputtering under different gas pressures. Palladium thin film morphology was found to strongly influence sensor response in terms of hydrogen sensitivity and rate of response. In dense columnar Pd films, CO dramatically increases the time-lag in sensor response to H2 in H2/CO mixtures. However, the steady state value of the response remains unchanged. Films with a void filled columnar morphology exhibited shorter time-lag in response to H2 in presence of CO. 相似文献
17.
基于电子印刷工艺的薄膜热电偶研制 总被引:2,自引:0,他引:2
薄膜热电偶由于具有体积小、热容量小及响应速度快等优点成为近年来学者们研究的重点。薄膜制备常用的方法有射频溅射法、离子镀膜法以及直流脉冲磁控溅射法等,但这些方法操作设备复杂,制作时间长,效率低,成功率低且复现性差。用电子印刷工艺制备薄膜热电偶,将Au,Pt的溶液化微纳米材料印制在基板上,印刷成为Au-Pt薄膜热电偶,该方法操作方便快捷,对电极材料污染小。通过试验证明:采用电子印刷工艺制备的Au-Pt薄膜热电偶符合Au-Pt热电偶检定规程的要求,热电偶精度高,重复性和一致性好。 相似文献
18.
A new fabrication process for nanoscale tungsten tip arrays was developed for scanning probe microscopy-based devices. It is suitable to make a huge array on a device chip and is potentially compatible with CMOS technology. In this study, tungsten was selected as a tip material because of its hardness and conductivity. The newly developed fabrication process mainly consists of several important techniques: a combination of optical lithography and electron beam (EB) lithography to reduce the total exposure time with high resolution and chromium/tungsten/chromium (Cr/W/Cr) sandwich deposition and etching in which the first chromium layer is used as a mask and a second one is used as an etch stop. A periodic array of dots in an EB resist with a spot diameter of less than 50 nm was obtained by a combination of optical lithography and EB lithography with a positive resist (polymethylmethacrylate) in which all processing conditions were optimized carefully. A thin and uniform chromium film, deposited by ion-beam sputtering, allowed the use of thin polymethylmethacrylate (PMMA) film which led to the high resolution. The conditions of dc magnetron sputtering were also optimized in order to deposit a densely packed and low-resistivity film. The resulting tungsten tip arrays had a cylindrical shape with diameters of less than 60 nm and heights of 300 nm 相似文献