Microstructure and thermal conductivity of spark plasma sintering AlN ceramics

Abstract

Dense aluminium nitride ceramics were prepared by spark plasma sintering at a lower sintering temperature of 1700°C with Y₂O₃, Sm₂O₃ and Dy₂O₃ as sintering additives respectively. The effects of three kinds of sintering additives on the phase composition, microstructure and thermal conductivity of AlN ceramics were investigated. The results showed that those sintering additives not only facilitated the densification via the liquid phase sintering mechanism, but also improved thermal conductivity by decreasing oxygen impurity. Sm₂O₃ could effectively improve thermal conductivity of AlN ceramics compared with Y₂O₃ and Dy₂O₃. Observation by scanning electron microscopy showed that AlN ceramics prepared by spark plasma sintering method manifested quite homogeneous microstructures, but AlN grain sizes and shapes and location of secondary phases varied with the sintering additives. The thermal conductivity of AlN ceramics was mainly affected by the additives through their effects on the growth of AlN grain and the location of secondary phases.     

Study on microstructure and thermal conductivity of Spark Plasma Sintering AlN ceramics

Dense aluminum nitride (AlN) ceramics were prepared by Spark Plasma Sintering with rare-earth oxide and CaF₂ as sintering additives. The effect of sintering additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics was investigated. The results showed that those sintering additives not only promoted densification through liquid-phase sintering but also improved thermal conductivity by decreasing oxygen impurities. Thermal conductivities of samples sintered with optimum proportion of rare-earth oxide and CaF₂ were higher than those of other samples. During the Spark Plasma Sintering process, the microstructures, especially the content and distribution of secondary phases, played important roles on the thermal conductivity of AlN ceramics.     

Low temperature co-fired AlN multilayer substrates

A process for low temperature co-fired AlN multilayer substrates is introduced. Some key factors about this technology are delineated and discussed. A two-step burnout process may solve the contradiction between tungsten oxidation and carbon removal. Sintering with additives appears to improve densification at low temperature. DyN was found as a second phase in AlN ceramics, which suggests that Dy₂O₃ efficiently removes oxygen from the AlN lattice. The microstructure of AlN ceramics is ideal for achieving high thermal conductivity. Analysis of the AlN-W interface showed there were no second phases, but there was probably an intricate interlocking structure between the grains of tungsten and AlN. Co-firing at 1650°C for 4 h produced an AlN multilayer substrate with a thermal conductivity of up to 130 W m⁻¹ K⁻¹. This revised version was published online in July 2006 with corrections to the Cover Date.     

Potential use of only Yb2O3 in producing dense Si3N4 ceramics with high thermal conductivity by gas pressure sintering

Abstract

Yb₂O₃ is an efficient sintering additive for enhancing not only thermal conductivity but also the high-temperature mechanical properties of Si₃N₄ ceramics. Here we report the fabrication of dense Si₃N₄ ceramics with high thermal conductivity by the gas pressure sintering of α-Si₃N₄ powder compacts, using only Yb₂O₃ as an additive, at 1900 °C under a nitrogen pressure of 1 MPa. The effects of Yb₂O₃ content, sample packing condition and sintering time on the densification, microstructure and thermal conductivity were investigated. Curves of the density plotted against the Yb₂O₃ content exhibited a characteristic ‘N’ shape with a local minimum at 3 mol% Yb₂O₃ and nearly complete densification below and above this concentration. The effects of the sample packing condition on the densification, microstructure and thermal conductivity strongly depended on the Yb₂O₃ content. The embedded condition led to more complete densification but also to a decrease in thermal conductivity from 119 to 94 W m^-1 K^?1 upon 1 mol% Yb₂O₃ addition. The sample packing condition had little effect on the density and thermal conductivity (102–106 W m^?1 K^?1) at 7 mol% Yb₂O₃. The thermal conductivity value was strongly related to the microstructure.     

Potential use of only Yb2O3 in producing dense Si3N4 ceramics with high thermal conductivity by gas pressure sintering

Yb₂O₃ is an efficient sintering additive for enhancing not only thermal conductivity but also the high-temperature mechanical properties of Si₃N₄ ceramics. Here we report the fabrication of dense Si₃N₄ ceramics with high thermal conductivity by the gas pressure sintering of α-Si₃N₄ powder compacts, using only Yb₂O₃ as an additive, at 1900 °C under a nitrogen pressure of 1 MPa. The effects of Yb₂O₃ content, sample packing condition and sintering time on the densification, microstructure and thermal conductivity were investigated. Curves of the density plotted against the Yb₂O₃ content exhibited a characteristic ‘N’ shape with a local minimum at 3 mol% Yb₂O₃ and nearly complete densification below and above this concentration. The effects of the sample packing condition on the densification, microstructure and thermal conductivity strongly depended on the Yb₂O₃ content. The embedded condition led to more complete densification but also to a decrease in thermal conductivity from 119 to 94 W m^-1 K⁻¹ upon 1 mol% Yb₂O₃ addition. The sample packing condition had little effect on the density and thermal conductivity (102–106 W m⁻¹ K⁻¹) at 7 mol% Yb₂O₃. The thermal conductivity value was strongly related to the microstructure.     

The study of AlN ceramics sintered at superhigh pressure with belt-type press technology

The effects of Y₂O₃ content, sintering time, sintering temperature, sintering pressure on thermal conductivity of AlN ceramics had been studied. X-ray diffraction (XRD), scanning electron microscope (SEM), laser conductometer and laser granularity dimension analysis measurer were respectively used to measure the phases, microstructure, thermal conductivity and particle size distribution of the samples. These studies reveal that the Y₂O₃ is an effective sintering addtive, and the best conditions of sintering are that the pressure is 5.15× 10⁹ Pa, the temperature is 1700∘C and the sintering time is 115 min. Under these conditions, the sintered body has reasonable structure and its thermal conductivity is 200 w/(m⋅k).     

Sintering and characterization of fully dense aluminium nitride ceramics

Aluminium nitride ceramics with no sintering additives could be densified to close to theoretical density (99.6% theoretical) by pressureless sintering of tape-cast green sheets at 1900 °C for 8 h. The thermal conductivity and bending strength of the specimens were 114 Wm^–1 K^–1 and 240 MPa, respectively. The effect of Y₂O₃ additive on sinterability, thermal conductivity and microstructure of aluminium nitride ceramics was investigated. Thermal conductivity increased with increasing amount of Y₂O₃ additive, sintering temperature and holding time at the sintering temperature. Samples with a thermal conductivity up to 258 Wm^–1 K^–1 were fabricated by elimination of the grain-boundary phase.     

Hot-pressed AlN-Cu metal matrix composites and their thermal properties

AlN-Cu metal matrix composites containing AlN volume fractions between 0.1 and 0.5 were fabricated firstly by liquid phase sintering of AlN using Y₂O₃ as a sintering aid and then by hot pressing the powder mixtures of sintered AlN and Cu at 1050°C with a pressure of 40 MPa under flowing nitrogen. With Y₂O₃ additions of 1.5 to 10 wt%, the densification of AlN could be achieved by liquid phase sintering at 1900°C for 3 h and subsequently slow cooling. The sintered AlN showed a maximum thermal conductivity of 166 W/m/K at a Y₂O₃ level of 6 wt%. Dense AlN-Cu composites with AlN contents up to 40 vol% were achieved by hot pressing. The thermal conductivity and the coefficient of the thermal expansion (CTE) of the composites decreased with increasing AlN volume fractions, giving typical values of 235 W/m/K and 12.6 × 10^–6/K at an AlN content of 40 vol%.     

Spark plasma sintering of silicon nitride using nanocomposite particles

The spark plasma sintering (SPS) of silicon nitride (Si₃N₄) was investigated using nanocomposite particles composed of submicron-size α-Si₃N₄ and nano-size sintering aids of 5 wt% Y₂O₃ and 2 wt% MgO prepared through a mechanical treatment. As a result of the SPS, Si₃N₄ ceramics with a higher density were obtained using the nanocomposite particles compared with a powder mixture prepared using conventional wet ball-milling. The shrinkage curve of the powder compact prepared using the mechanical treatment was also different from that prepared using the ball-milling, because the formation of the secondary phase identified by the X-ray diffraction (XRD) method and liquid phase was influenced by the presence of the sintering aids in the powder compact. Scanning electron microscopy (SEM) observations showed that elongated grain structure in the Si₃N₄ ceramics with the nanocomposite particles was more developed than that using the powder mixture and ball-milling because of the enhancement of the densification and α-β phase transformation. The fracture toughness was improved by the development of the microstructure using the nanocomposite particles as the raw material. Consequently, it was shown that the powder design of the Si₃N₄ and sintering aids is important to fabricate denser Si₃N₄ ceramics with better mechanical properties using SPS.     

High dielectric AlN/Al2O3 composite powder using a plasma spray approach for microelectronics application

Increasing demand for higher performance dielectric material for multi-layer ceramics packaging has led to the use of the AlN system due to its very high thermal conductivity and coefficient of expansion compatibility with silicon. This paper reports on a novel process method used to produce an AlN/Al₂O₃ composite powder system which can be subsequently tape cast as a dielectric substrate. The mixture of both Al₂O₃ and AlN was first mechanically alloyed and then spray-dried to obtain a suitable agglomerated powder that was subsequently plasma-sprayed, resulting in a fine micrometer level integrated composite powder. The two main criteria used to ascertain the optimal process parameters during plasma spraying were a high gamma/alpha Al₂O₃ phase ratio, which ensured that all the Al₂O₃ phase had melted during plasma spraying, and a minimal reduction in the AlN/Al₂O₃ ratio to ensure minimal change in the AlN during processing. For the plasma-sprayed composite powders, fully sintered ceramic tapes were produced attaining>99.0% of the theoretical density after sintering at 1650°C for 6 h, which yielded a thermal conductivity value of 32.0 W m^–1 K^–1.     

The effect of carbon coating of AIN powder on sintering behavior and thermal conductivity

High thermal conductive AlN ceramics doped with Y₂O₃ were produced by sintering the powders obtained after applying a carbon coating to the surface of AlN powder grains. During sintering at 1800°C for 1 hour, the carbon reacts with the surface of the AlN grains by carbothermal-reduction of Al₂O₃, and also with the Al₂Y₄O₉ intermediate phase to form AlN, Y₂O₃ and CO. By adding 0.56 mass% of carbon, almost all the Al₂Y₄O₉ is reacted and the thermal conductivity increases from 184 W/(m · K) to 224 W/(m · K). Further carbon addition decreases the thermal conductivity and also the final sintered density.     

CaO-Y2O3添加剂对AlN陶瓷显微结构及性能的影响

研究了掺杂ＣａＯ－Ｙ２Ｏ３热压烧结和常压烧结ＡｌＮ陶瓷的性能和显微结构．结果表明：热压烧结ＡｌＮ陶瓷的第二相为Ｙ３Ａｌ５Ｏ１２，常压烧结ＡｌＮ陶瓷的第二相为Ｙ３Ａｌ５Ｏ１２和Ｃａ３Ｙ２Ｏ６；热压烧结ＡｌＮ的第二相体积百分数和晶格氧含量均低于常压烧结；热压烧结ＡｌＮ陶瓷的微观结构良好，其热导率达到２００Ｗ／ｍ·Ｋ．     

Microstructure and thermal conductivity of AIN ceramics containing additives

The effect on AIN ceramic of the addition of Y₂O₃, Yb₂O₃, Er₂O₃ and CaO were investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and thermal conductivity measurements. The effect of grain boundary segregation and second phase distribution on the thermal conductivity are discussed. The Er₂O₃-CaO-and the Yb₂O₃-CaO-AIN ceramics have a higher thermal conductivity than the CaO-and the Y₂O₃-CaO-AIN ceramics. This is explained on the basis of the free energy of formation (G°), the vaporization of the sintering additives and the microstructural development. Oxidation of freshly cleaned surfaces of those AIN ceramics was studied.     

Influence of CuO and B<Subscript>2</Subscript>O<Subscript>3</Subscript> on sintering and dielectric properties of tungsten bronze type microwave ceramics: a case study in Ba<Subscript>4</Subscript>Nd<Subscript>9.3</Subscript>Ti<Subscript>18</Subscript>O<Subscript>54</Subscript>

The effect of CuO and B₂O₃ co-doping on the sintering behavior, microstructure and microwave dielectric properties of tungsten bronze type Ba₄Nd_9.3Ti₁₈O₅₄ (BNT) ceramics has been investigated by means of a traditional solid-state mixed oxide route. On the one hand, it was indicated that the mixture of CuO and B₂O₃ is an effective sintering aid for BNT matrix compositions owing to the existence of a low-temperature eutectic reaction. On the other hand, it was found that the addition of CuO and B₂O₃ has an obvious effect on microwave dielectric properties of BNT ceramics, depending on the amount of sintering aids, the sample density and microstructure. The liquid phases from sintering aids can promote densification, but simultaneously induce grain growth which tends to decrease the sintering driving force. BNT ceramics doped with 3 wt% CuO–B₂O₃ mixture can be well sintered at 950°C for 4 h and still exhibit relatively good microwave dielectric properties.     

The effect of MgO and SiO2 codoping on the properties of Nd:YAG transparent ceramic

Nd:YAG transparent ceramics were fabricated by a reactive sintering method under vacuum using SiO₂, MgO and compound additives (SiO₂ and MgO) as sintering aids. The effects of SiO₂ and MgO on the microstructure and sintering process of Nd:YAG ceramics were studied. High quality Nd:YAG ceramics with compound sintering aids obtained by vacuum sintering at 1780 °C are composed of grains of the size ∼10 μm, and their transmittance is 82% at 400 nm. It was found the absorption coefficient of 1.0 mol% Nd:YAG ceramic was 8.6 cm⁻¹ at 808 nm and its absorption cross section was calculated to be 6.26 × 10⁻²⁰ cm².     

Effect of nano-sized TiO<Subscript>2</Subscript> powder addition on characteristics of silver–palladium electrodes

This study presents the sintering behavior of silver/palladium electrode powders to which have been added TiO₂ nanoparticles, and the effect this additive has on the ability of the electrode to match the characteristics of piezoelectric ceramics, Pb(Zr, Ti)O₃. The densification (shrinkage) of the electrodes was investigated as a function of sintering temperature, and the reaction between the ceramic matrix and the electrodes was studied. The densification of the TiO₂-enhanced electrode paste during the sintering process was explained with reference to a solid-state diffusion mechanism which integrated the TiO₂ into the ceramic. Reactions occurred between the ceramic and electrode layers, resulting in reduced internal stress and enhanced mechanical adhesion. Based on these results, it is clear that high adhesive strength and good electrical conductivity of more than 10⁴/Ω cm can be obtained in multilayer ferroelectric devices composed of stacks of ceramic and electrode layers provided the contain these nanoparticles. In the sintering process, interfacial diffusion of TiO₂ occurred and, as a consequence, coarse grains of PZT were formed at the interface.     

Effect of Bi2O3 doping on the dielectric properties of medium-temperature sintering BaTiO3-based X8R ceramics

Medium-temperature sintering X8R ceramics were fabricated based on BaTiO₃-based ceramics with Bi₂O₃ additives. The effects of sintering aids Bi₂O₃ on crystalline structure and electrical properties of BaTiO₃-based ceramics were investigated. The sinterability of BaTiO₃ ceramics was significantly improved by adding Bi₂O₃, whose densification sintering temperature reduced from 1,260 to 1,130 °C. However, the dielectric constant (ε) of BaTiO₃-based ceramics doped with Bi₂O₃ was decreased dramatically. Both low ε phase Bi₄Ti₃O₁₂ and the decrease of the tetragonality (c/a ratio), which are demonstrated by XRD pattern, are resulted in the decrease of ε. The ε of samples doped with 5.5 wt% Bi₂O₃ was higher than the other doped samples. The substitution of Bi³⁺ for the Ba²⁺ in BaTiO₃ resulted in the increase of electrovalence (from +2 to +3) of A-site ion, so the attractive force between A and B (Ti⁴⁺) sites becomes stronger. Thus Ti⁴⁺’s polarization enhances, then ε was increased to some extent. The X8R BaTiO₃-based ceramics could be sintered at as low as 1,130 °C by doping 5.5 wt% Bi₂O₃ additives into the BaTiO₃-based ceramics, with a ε greater than 2,430 at 25 °C, dielectric loss lower than 1.3 % and temperature coefficient of capacitance <±15 % (?55–150 °C).     

The influence of microstructure on the thermal conductivity of aluminium nitride

Starting from three different commercial powders, AIN materials were densified by pressureless sintering under various temperature and time values in order to investigate the influence of microstructure on thermal conductivity. The influence of the sintering aids (3 wt% Y₂O₃ and 2 wt% CaC₂) and of the forming processes (cold isostatic pressing and thermocompression of tape cast pieces) were also been evaluated. Thermal conductivity increased with the purity level of the starting powder and with an increasing the sintering temperature and soaking time. The highest thermal conductivity values (196 Wm^–1 K^–1) were obtained with the purest powder and high temperature (1800 °C) sintering over long periods (6 h). No influence on thermal conductivity was detected from the forming technique.     

Effects of SrO–B2O3–SiO2 glass additive on densification and energy storage properties of Ba0.4Sr0.6TiO3 ceramics

SrO–B₂O₃–SiO₂ glass powders were prepared and employed as sintering aids to reduce the sintering temperature of Ba_0.4Sr_0.6TiO₃ ceramics. The effects of glass content and sintering temperature on the densification, dielectric properties and energy storage properties of Ba_0.4Sr_0.6TiO₃ ceramics have been investigated. The relative density characterization results indicate that densification of Ba_0.4Sr_0.6TiO₃ ceramics with glass content becomes apparently from sintering temperature of 1,060 °C. XRD results show all Ba_0.4Sr_0.6TiO₃ ceramics exhibit a perovskite structure without the formation of a secondary phase. The dielectric constant and dielectric loss decreased gradually with increasing glass content. The relationship between dielectric constant and breakdown strength was discussed using the thermochemical model. A discharged energy density of 0.44 J/cm³ with an energy efficiency of 67.4% was achieved for Ba_0.4Sr_0.6TiO₃ ceramic with 2.0 wt% glass addition sintered at 1,180 °C.     

Low temperature sintering of aluminum nitride with millimeter-wave heating

Rapid sintering of Yb₂O₃-added AlN was performed by applying the 28 GHz millimeter-wave heating method. It was found that full densification over 97%T.D. was attained by sintering at 1600°C for 20 min. The densification temperature was decreased by about 300°C, compared with those in the conventional method by an electric furnace. A high thermal conductivity over 180 W/(m · K) was obtained in the sample sintered at 1700°C for 40 min, even under non-reducing atmosphere. The main factor resulting in the rapid and low temperature sintering was attributed to efficient selective absorption of the millimeter-wave into Yb₂O₃ additive.