SnO2/TiO2纳米管阵列对304不锈钢的阴极保护效果

目前,就SnO2/TiO2复合薄膜对不锈钢的光生阴极保护效果的研究有待深入。以两步阳极氧化法在钛箔表面制备TiO2纳米管阵列膜,并将其浸渍在不同浓度的SnO2溶液中,得到了SnO2/TiO2复合纳米管阵列材料。采用扫描电镜(SEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)研究了其表面形貌、晶型,用电化学方法研究了SnO2/TiO2复合纳米管阵列对304不锈钢的光生阴极保护特性及耐腐蚀性能。结果表明:TiO2纳米管排列规整,孔径约80~150 nm;以0.5 mol/L SnO2溶胶制备的SnO2/TiO2半导体供给外电路的电子数最高;在紫外光照1 h时,TiO2和SnO2/TiO2均对304不锈钢有一定的光生阴极保护作用;闭光后SnO2/TiO2光生电极在较长时间内维持较低电位,低于其在3.5%NaCl溶液中的自腐蚀电位,延时阴极保护作用可以达到8.5 h。     

纳米SnO2/TiO2复合粉体制备及其红外特性研究

以溶胶-凝胶方法制备纳米SnO2/TiO2复合粉体,并用XRD、TEM等方法对其进行了表征,给出了相关的工艺参数.研究了纳米SnO2及SnO2/TiO2复合材料的红外吸收特性.结果表明,本文制备的纳米SnO2/TiO2复合材料在4000～1500cm-1和1000～400cm-1范围内有较好的红外吸收.     

Pd掺杂SnO_2纳米膜的制备及H_2敏感性能研究

以分析纯SnCl2.2H2O和PdCl2为主要原料,控制不同n(Pd2+)/n(Sn2+),利用溶胶凝胶-浸渍提拉法制备了Pd掺杂SnO2纳米膜。用XRD、AFM对样品的结构、形貌进行了分析,并测试了Pd掺杂SnO2纳米膜的阻温特性和对H2敏感性能。结果表明,Pd掺杂SnO2纳米膜平整而致密,表面椭球形粒子颗粒尺寸约为20nm;Pd掺杂SnO2为金红石型晶体结构,但Pd2+进入SnO2晶格代替八面体中部分Sn4+,导致其晶胞参数比未掺杂SnO2略小;Pd掺杂SnO2纳米膜的电阻随温度升高而减小,表现出n型半导体阻温特性;随着Pd掺杂比例的增大,元件的电阻增大,其对H2的灵敏度先增大后减小,当掺杂比例为1%时对H2灵敏度最高。     

Ta掺杂提高TiO_2光催化效率及对微观结构的调制

采用Ta元素掺杂TiO_2光催化剂,研究掺杂引起的光催化效率变化、微观结构改变和催化剂改性的机制。采用溶胶凝胶法制备不同浓度的Ta元素掺杂纳米TiO_2光催化剂,并通过降解罗丹明B表征其光催化性能。通过X射线衍射、拉曼光谱和X射线光电子能谱分析Ta掺杂纳米TiO_2催化剂晶相、微观结构、元素组成和化合价等。结果表明:Ta掺入纳米TiO_2催化剂后,Ta原子将取代Ti的位置,以Ta~(5+)形式存在于TiO_2晶格中,促进掺杂样品中形成氧空位,可以有效提高电子密度,并抑制光生载流子复合,从而提高催化效率。当掺杂比例n_(Ta)/n_(Ti)为3%时,光催化效率最高,光照2 h对罗丹明B降解率高达83.8%,是未掺杂样品的2倍以上。     

纳米MgO/SnO2复合粉体的制备及性能研究

采用共沉淀法制备了MgO/SnO2纳米复合粉体.用热重分析(TG)、X射线衍射仪(XRD)、透射电镜(TEM)和能谱(EDS)对样品的物相、形貌、粒径和组成进行了表征.并用DSC考察了纳米MgO/SnO2对RDX热分解的催化作用.结果表明 400℃煅烧样品的平均粒径约为3nm, MgO的掺杂可提高纳米SnO2粒子的热稳定性和对RDX热分解的催化作用, 它使RDX的分解峰温降低了8.5℃, 分解热增加了518J·g-1(约50%).     

SnO2共混Fe2O3纳米氧化物的制备及其组织结构研究

用SnCl4和FeCl3为原料,采用化学共沉淀法制备掺杂Fe2O3的纳米SnO2,运用差热(DSC)、X射线粉末衍射(XRD)和透射显微镜(TEM)等方法对Fe2O3和SnO2混杂纳米粉末的物相和粒径进行了分析。结果发现：与纯SnO2相比,(1)掺杂Fe2O3可以降低前驱体Sn(OH)4分解制备SnO2纳米晶的焙烧温度,从纯Sn(OH)4的分解温度345．7℃下降到341．1℃;(2)掺杂Fe2O3可以有效阻碍SnO2纳米晶的团聚和长大,前驱体在650℃焙烧时,纯SnO2晶粒在25nm,而掺杂Fe2O3的SnO2晶粒可以保持在2nm左右;(3)掺杂Fe2O3使前驱体焙烧制备SnO2的温度范围更宽,对制备小于10nm的SnO2纳米晶,纯SnO2的焙烧温度范围在400～550℃,而掺杂Fe2O3的焙烧温度范围在400～650℃;(4)SnO2／Fe2O3复合粉末在650℃以下,其晶体结构保持溶剂SnO2的四方结构,部分Fe元素置换了Sn的位置;650℃以上,复合粉末从溶剂晶格中析出Fe2O3形成两相结构。     

纳米SnO2基气敏元件对甲醛气体的检测（英文）

采用溶胶-凝胶法制备了纳米SnO2粉末,利用X射线衍射仪(XRD)以及原子力显微镜(AFM)对材料的晶体结构及晶粒尺寸进行了表征.采用制备的纳米SnO2作为基底材料,掺杂纳米TiO2粉末(SnO2与TiO2的物质的量之比为9∶1)以及少量的Ag+(物质的量百分比为0.2%~0.4%),以此材料制成气敏元件,检测了元件的甲醛气敏性能.结果表明:该元件在工作温度为300℃时,对200×10-6的甲醛具有较好的敏感性,在不同的工作温度下,元件表现出良好的气敏选择性.理论计算表明,气体分子轨道能量的差异是元件气敏选择性的定性因素.     

SnO2纳米颗粒制备及其对溶胶-凝胶Sb:SnO2薄膜性能的影响

以Sn(OEt)2为起始原料,采用水热晶化法合成了分散性良好的金红石结构的SnO2纳米颗粒.采用X射线衍射对其进行了表征,表明SnO2纳米颗粒的结晶性良好,颗粒尺寸小于10nm.将合成的SnO2纳米颗粒均匀分散到Sb:SnO2镀膜液中,经陈化后制成镀膜溶胶,以溶胶-凝胶浸渍镀膜工艺制备纳米颗粒掺杂Sb:SnO2薄膜.分别采用范德堡(Van Der Pauw)法、UV/VIS分光光度计和FTIR中红外分析仪测量并分析膜层的导电性能、光学性能及结构特征,研究了导电纳米颗粒添加对Sb:SnO2薄膜电性能、光学性能和结构的影响.     

Ag/Bi-TiO_2的制备及光催化气相甲苯性能的研究

采用溶胶-凝胶法制备Ag/Bi-TiO2光催化剂,通过XRD、SEM、BET及UV-VisDRS对催化剂进行表征,并对其可见光催化气相甲苯的活性进行了考察。结果表明,与纯TiO2相比,Ag/Bi-TiO2光催化剂的晶粒粒径减小,比表面积增大,同时Bi—O—Ti键以及Ag杂质能级的形成,拓宽了TiO2的光吸收范围,减少了光生电子-空穴的复合几率,提高TiO2的光催化活性。当焙烧温度为450℃时,0.001Ag/0.05Bi-TiO2光催化剂(n(Ag)/n(TiO2)=0.001,n(Bi)/n(TiO2)=0.05)对甲苯的降解效率能达到77.7%,比纯TiO2提高了72.6%。     

C/SnO2/TiO2纳米复合物的制备及其电化学性能研究

通过碳化吸附在SnO2/TiO2电极上的葡萄糖制备出C/SnO2/TiO2纳米复合电极材料。采用晶体粉末衍射仪(XRD)、场发射扫描电镜(SEM)、X射线能谱分析(EDS)等手段对复合电极进行了表征。将复合电极作为锂离子电池负极材料,通过循环伏安和计时电位法研究了其电化学性能。结果表明,在大的电流密度200μA·cm-2下循环30次后,放电容量仍保持在120.1μAh·cm-2。相比SnO2/TiO2电极,C/SnO2/TiO2复合电极电化学性能显著提高,交流阻抗谱图也显示C/SnO2/TiO2纳米复合材料拥有更低的电荷转移电阻。     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Radial GRIN glasses in Li2O-Na2O-Al2O3-TiO2-SiO2 systems

A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Si_2N_2O-Al_2O_3-La_2O_3和Si_2N_2O-Al_2O_3-CaO系统的亚固相关系

本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O