ZrO2(Y2O3)含量对双峰晶粒度分布Mo-12Si-8.5B-ZrO2(Y2O3)复合材料力学性能的影响

多相Mo-12Si-8.5B合金是一种很有应用前景的高温结构材料,为了同时提高Mo-12Si-8.5B合金的强度和韧性,提出了采用纳米ZrO₂(Y₂O₃)强韧化具有双峰晶粒度分布Mo-12Si-8.5B复合材料的方法。首先采用溶胶-凝胶和高温氢还原法制备了纳米Mo-ZrO₂(Y₂O₃)复合粉末,然后以纳米Mo-ZrO₂(Y₂O₃)粉末和微米Mo粉末为原材料,采用放电等离子烧结(SPS)技术制备了具有双峰晶粒度分布的Mo-12Si-8.5B-ZrO₂(Y₂O₃)复合材料。结果表明,随着ZrO₂(Y₂O₃)含量的增加,制备的Mo-ZrO₂(Y₂O₃)纳米粉末的粒度和烧结体相对致密度均逐渐减小,ZrO₂(Y₂O₃)含量小于2.5wt%时,烧结体的相对致密度均大于98.1%。当ZrO₂(Y₂O₃)含量为1.5wt%和2.5wt%时,复合材料具有较高的硬度(9.76~9.98 GPa),抗弯强度(672~678 MPa)和断裂韧性(12.68~12.82 MPa·m1/2)。Mo-12Si-8.5B-ZrO₂(Y₂O₃)复合材料中Mo晶粒细化、粗细Mo晶粒的晶界强化和纳米ZrO₂(Y₂O₃)颗粒第二相强化是提高硬度和抗弯强度主要原因;复合材料中粗晶粒Mo和纳米ZrO₂(Y₂O₃)有助于断裂韧性的提高,材料的增韧机制主要是裂纹偏转和裂纹桥接。      

以H3PW12O40为底物制备具有光催化活性的WO3

以H3PW12O40固体和PVA/H3PW12O40电纺纤维为基底,在不同的温度下进行焙烧,制备了WO3颗粒和超细的WO3纤维。场发射扫描电镜(FE-SEM)、X-射线粉末衍射(XRD)、红外光谱(FT-IR)等表征手段对WO3的形貌和内部结构进行测定,结果表明WO3纤维为单斜晶系,而WO3颗粒为单斜与斜方晶系共存的结构。依据紫外漫反射(UVDRS)数据计算了不同形貌WO3的禁带隙宽;在365nm波长的光照射染料,小尺寸的WO3具有较高光催化活性,并对其光催化反应机理进行了探讨研究。     

Ag/Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si结构铁电薄膜制备及其铁电性能的研究

利用溶胶-凝胶(sol-gel)方法,在硅基底上制备了Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si铁电薄膜,其中Bi4Ti3O12作为缓冲层.用XRD方法分析了该结构铁电薄膜的物相结构;用扫描电镜对薄膜样品进行表面形貌观察;并且对该结构的铁电性能进行了研究.     

反应烧结制备Li2Zn2Mo3O12微波介质陶瓷及其微波介电性能研究

采用反应烧结法制备了具有超低烧结温度的Li₂Zn₂Mo₃O₁₂微波介质陶瓷,研究了烧结温度对Li₂Zn₂Mo₃O₁₂陶瓷的烧结特性、物相组成、微观结构以及微波介电性能的影响。XRD表明：在550～650℃范围内,温度对陶瓷的物相组成影响不大;随着烧结温度的升高,Li₂Zn₂Mo₃O₁₂陶瓷的体积密度、相对密度、介电常数(ε_r)和品质因数(Q×f)均呈先增大后减小的趋势,谐振频率温度系数(τ_f)在-(70～90)×10^-6/℃波动。在625℃烧结2 h获得最大体积密度和相对密度：4.25 g/cm³和96.4%,以及优异的微波介电性能ε_r=10.9,Q×f=69 459 GHz,τ_f=-84×10<...     

Sr2NaMg2V3O12的合成及发光性研究

采用高温固相法制备了Sr2NaMg2V3O12荧光粉,研究了焙烧温度、保温时间和NH4VO3用量等工艺参数对合成产物发光性能的影响,得出优化的工艺条件为NH4VO3过量1.5%,600℃预烧2h后900℃保温6h。所合成Sr2NaMg2V3O12荧光粉在紫外激发下发淡蓝绿色近白光,荧光光谱分析结果显示其激发峰主要位于波长小于390nm的近紫外和紫外区,发射谱带为400～640nm,发射主峰位于470nm左右,有望成为新型近白光LED荧光粉。     

Bi4Ti3O12铁电薄膜I-V特性的研究

采用溶胶-凝胶工艺(Sol-Gel)在Pt/Ti/SiO2/p-Si衬底上成功制备了低漏电流Bi4Ti3O12(BIT)铁电薄膜,对所得样品的漏导行为进行了研究.研究表明,Bi4Ti3O12薄膜的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.在不同场强下薄膜的漏导机制不同,而且正向和负向电场作用下I-V曲线明显不同,正向漏电流明显小于负向漏电流.电压低于2V时,薄膜以欧姆导电机制为主,电压在2～5.4V(加正向电压)或2.2～3.6V(加负向电压)时,BIT薄膜应以Schottky emission导电机制为主;而对于较高的场强下,BIT薄膜以Space-charge limited currents(SCLC)导电机制为主.     

铈掺杂黄色荧光粉（LuGd）2CaMg2Si3O12的发光性能研究

在还原气氛下采用高温固相法合成了钇铝石榴石结构的荧光粉Lu2CaMg2Si3O12∶R(Ce3+,Gd3+),其中Gd3+的浓度变化为1~5 mol%。利用X射线衍射仪对其物相进行分析,结果显示:Ce3+的掺入使晶相结构不稳定,出现了少量杂相,而掺入少量Gd3+时,晶相结构不再变化。利用荧光光谱仪对其光学性能进行研究,结果发现随着Ce的浓度增大,发光强度先增大后减小且同时伴随着少许的发光红移,在2 mol%出现浓度淬灭;Gd的掺入对红移的贡献比较明显,最大波长从561 nm(1%Gd)→568 nm(5%Gd),同时也发现发光强度有明显的下降。这种荧光粉的激发波长在465 nm左右,与蓝光LED芯片的发射中心相吻合,而且发射峰明显比YAG要长,所以这种荧光粉能很好的补充YAG的显色性。     

基于RSM的Al2O3陶瓷膏体配方优化

为采用低成本在低温下实现复杂陶瓷零件的成型,研究Al2O3陶瓷膏体的配方对其成型过程以及成型后物理机械性能的影响.采用中心组合方法设计实验方案,考察了p H值、粘结剂和分散剂三因素对Al2O3陶瓷膏体黏度的影响,运用响应面方法(RSM)对影响Al2O3陶瓷膏体黏度的工艺参数进行详细分析,建立了Al2O3陶瓷膏体黏度的响应模型,进行响应曲面分析,根据满意度函数(DFM)确定最佳陶瓷膏体黏度值对应的工艺参数,试验表明,所建立的模型能实现相应的黏度值预测.     

基于第一性原理计算的Li7La3Zr2O12固态电解质的研究进展

Li₇La₃Zr₂O₁₂固态电解质具备高离子电导率、对锂金属负极良好的化学稳定性以及宽电化学窗口等特点,被视为最具发展和应用前景的固态电解质之一。基于密度泛函理论计算的第一性原理计算是从量子力学出发,在电子层面计算个体和总体的电子和原子行为。将第一性原理计算与Li₇La₃Zr₂O₁₂固态电解质研究相结合可以在原子尺度上预测和解释电解质材料的性质和行为,同时将计算和系统模型相结合有助于解释该电池系统复杂的实验表征结果。概括了第一性原理计算在Li₇La₃Zr₂O₁₂固态电解质中的应用,总结Li₇La₃Zr₂O₁₂的电子结构和晶体结构等微观结构特征,分析了锂负极与电解质的接触角、锂离子的迁移以及电解质热力学性质等物理化学性质,最后对第一性原理计算...     

Time-resolved spectroscopy of intrinsic luminescence of Y3Ga5O12 and (LaLu)3Lu2Ga3O12 single crystals

The nature of intrinsic luminescence of Y₃Ga₅O₁₂ (YGG) and (LaLu)₃Lu₂Ga₃O₁₂ (LLGG) single crystals grown from a melt was determined. In the case of a YGG single crystal containing Y_Ga antisite defects with a concentration of 0.25–0.275 at.% the intrinsic luminescence was considered as a superposition of luminescence of self-trapped excitons (STE), luminescence of excitons localized near antisite defects (LE(AD) centers) and luminescence caused by a recombination of an electron with a hole captured at Y_Ga antisite defects. Due to a large (2–3%) concentration of Lu_La antisite defects in LLGG single crystals the intrinsic luminescence was a superposition mainly of the LE(AD) center emission and the recombination luminescence of Lu_La antisite defects. The energy structure of the mentioned centers in YGG and LGGG hosts was determined from the excitation spectra of their luminescence under excitation by synchrotron radiation in the range of the fundamental absorption edge of these garnets.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

第一性原理对CaTiO3和CaCu3Ti4O12的对比研究

通过Ca替换CaCu_3Ti_4O_(12)晶胞中的所有Cu,建立了包含TiO6八面体扭转的CaTiO3;通过Cu替换CaTiO32×2×2超胞中3/4的Ca,建立了不包含CuO_4正方形的CaCu_3Ti_4O_(12)。采用Materials Studio软件的CASTEP模块,对比了上述晶体和标准晶体成键状况、能带结构、态密度及介电函数,分析了TiO6八面体扭转和CuO_4正方形的影响,发现了Cu-O键或CuO_4正方形对CaCu_3Ti_4O_(12)光频介电常数的关键性作用。研究结果提供了通过内禀机制优化CaCu_3Ti_4O_(12)材料介电性能的新途径。     

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

纳米Fe3O4及Fe3O4-SrFe12O19吸波复合材料的制备及性能

采用共沉淀法成功制备出具有超顺磁性的纳米Fe₃O₄, 并将Fe₃O₄与SrFe₁₂O₁₉复合制成复合吸波材料Fe₃O₄-SrFe₁₂O₁₉, 利用X射线衍射仪(XRD)、透射电镜(TEM)、振动样品磁强计(VSM)和矢量网络分析仪(PNA)对产物的物相、显微结构、磁性能和吸波性能进行了表征与分析。结果表明, 当Fe₃O₄与SrFe₁₂O₁₉质量比为1∶0.3时, Fe₃O₄-SrFe₁₂O₁₉饱和磁化强度为11.1 emu·g^-1, 矫顽力0.86 Oe, 剩余磁化强度0.08 emu·g^-1, 其吸波性能最佳, 最大吸收峰值为-17.7 dB,-5 dB频宽为1.3 GHz, 较Fe₃O₄和 SrFe₁₂O₁₉的最大吸收峰值分别提高247%和185%, 频带分别拓宽1.12 GHz和0.40 GHz。     

Spectroscopic properties of red Bi4Ge3O12 by vertical Bridgman method

Red Bi₄Ge₃O₁₂ (BGO) single crystals had been grown by vertical Bridgman (VB) method. The structure of this crystal was determined by XRD. The absorption and emission spectra of the red BGO in visible and near infrared region (NIR) were measured at room temperature. The emission intensity of the red BGO is weaker than that of ordinary BGO at about 500 nm. Interestingly, the red BGO shows a significant emission band centered at about 1495 nm. The red BGO faded and its properties recovered after ultraviolet (UV) irradiation or annealing.     

Improved dielectric properties of CaCu3Ti4O12 thin films on oxide bottom electrode of La0.5Sr0.5CoO3

We report on the effect of La_0.5Sr_0.5CoO₃ (LSCO) bottom electrode to the dielectric properties of CaCu₃Ti₄O₁₂ (CCTO) thin films grown on Ir/Ti/SiO₂/Si substrates. Compared with the films grown directly on Ir/Ti/SiO₂/Si substrates, the dielectric constant has been increased greatly about 100%, and the dielectric loss decreased to lower than 0.2 in the frequency range of 1-100 kHz. The origin has been discussed in details based on the analysis of the X-ray diffraction and impedance spectra measurements. Results of the impedance spectra suggest that the absence of undesired interfacial layer between Ir/CCTO thin films might be one of the major reasons of the improvement of the dielectric properties when the LSCO was introduced as the bottom electrode.     

Topochemical synthesis of plate-like Na0.5Bi0.5TiO3 templates from Bi4Ti3O12

Plate-like templates for the development of grain oriented microstructures are required for lead-free piezoelectric ceramics with directionality of properties. Plate-like Na_0.5Bi_0.5TiO₃ templates with perovskite structure were synthesized by the Topochemical Microcrystal Conversion (TMC) method from bismuth layer-structured ferroelectric compound Bi₄Ti₃O₁₂. The TMC-derived NBT templates, with diameters of 5-15 µm and an average thickness of 0.7 µm, maintained the morphology of Bi₄Ti₃O₁₂ precursors, showing a high degree of preferred pseudocubic < 001> orientation. The Na_0.5Bi_0.5TiO₃ particles prepared could serve as good templates for the preparation of grain oriented lead-free NBT-based piezoelectric ceramics.     

The effect of stress on the dielectric constants of Bi4Ti3O12 films

Both experiment and theory have shown that the stress has a notable impact on the polarization of Nd-doped Bi₄Ti₃O₁₂ films. In this paper, thermodynamic theory is used to study the effect of stress on the dielectric constants of Bi₄Ti₃O₁₂ films at room temperature with a two-dimensional model. Results indicate that the change of the dielectric constant for a-phase induced by the lattice distortion is far greater than that for c-phase. Considering the domain reorientation, the external tensile stress may lead to an obvious decrease in the effective dielectric constant of Bi₄Ti₃O₁₂ films.