真空烧结对SrTiO3功能陶瓷性能的影响

采用真空烧结替代气氛烧结制备SrTiO3陶瓷材料,获得了既具有电容效应又具有良好压敏效应性能的SrTiO3复合功能陶瓷元件.在此基础上探讨了Nb2O5和La2赴O3作为单、双施主掺杂对SrTiO3功能陶瓷半导化、电性能及显微结构的影响.研究结果表明,双施主掺杂不仅可以促进SrTiO3功能陶瓷半导化,而且对显微结构有重要的影响.在x(Nb2O5);x(La2O3)0.6:0.2时可获得性能较好的半导体材料.相比于气氛烧结工艺,真空烧结同样可以得到性能优良的SrTiO3功能陶瓷材料.     

Sm2O3掺杂Bi2O3-ZnO-Nb2O5基陶瓷的结构与性能

研究了Sm2O3掺杂的bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xSmxZn0.5)(Zn0.5Nb1.5)O7(O≤x≤0.6,BSZN),的结构及介电性能.结果表明纯BZN陶瓷的结构为立方焦绿石单相;当Sm2O3掺杂量较少(O＜x≤0.5)时,样品的相结构仍然保持立方焦绿石单相;随着Sm2O3掺杂量的进一步增加(x≥0.6),样品出现其它相.同时,试样的介电性能随结构的变化而呈现有规律的变化.     

CaTiO3基微波介质陶瓷材料的研究进展

综述了CaTiO3基微波介质陶瓷的发展与研究现状,比较分析了CaTiO3、Ca1-xLn2/3x TiO3、CaO-Li2O-Ln2O3-TiO2与Ca(B1/23 B'1/25 )O3微波介质陶瓷的重要微波介电性能,讨论了Bi2O3、B2O3、ZnO等低熔点烧结助剂对CaTiO3基微波介质陶瓷结构、介电性能的影响以及该系陶瓷制备的新工艺,指出了目前急需解决的问题与今后的发展方向.     

Y3+取代Bi3+的Bi2O3-ZnO-Nb2O5基陶瓷的结构与介电性

研究了Y3 取代的Bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xYxZn0.5)(Zn0.5Nb1.5)O7(0≤x≤1.5,BYZN)的结构和介电性能.采用传统的固相反应法制备陶瓷样品,XRD分析样品的相结构,SEM分析样品的微观形貌.结果表明:BZN陶瓷的结构为立方焦绿石单相;当Y3 取代量较少(0＜x≤0.3)时,样品的相结构仍然保持立方焦绿石单相;随着Y3 取代量的进一步增加(x≥0.6),样品由立方焦绿石相向YNbO4和ZnO复相过渡.同时,样品的介电性能随结构的变化而呈现有规律的变化.     

La_2O_3掺杂对ZnNb_2O_6陶瓷微观缺陷和介电常数的影响

通过测量不同La2O3含量的ZnLa2xNb2(1-x)O(6-2x)微波介质陶瓷的介电常数、符合正电子湮没辐射多普勒展宽谱和寿命谱,研究不同La2O3含量对该陶瓷介电常数和微观缺陷的影响。结果表明,x0.20时,随着La2O3含量增加,样品正电子平均寿命τm和缺陷浓度减小,致密度、商谱谱峰和介电常数εr升高。x=0.20时,样品正电子平均寿命τm和缺陷浓度最小,致密度、商谱谱峰和介电常数εr最高。x≥0.30时,样品正电子平均寿命τm和缺陷浓度升高,致密度、商谱谱峰和介电常数εr降低。     

Bi1.5-xCaxZnNb1.5O7陶瓷结构、介电性能与结晶化学特性

采用固相反应法制备Bi1.5-xCaxZnNb1.5O7(0≤x≤0.50,BCZN)陶瓷,研究Ca2+替代Bi3+对Bi1.5ZnNb1.5O7陶瓷烧结特性、显微结构、介电性能和结晶化学特性的影响.结果表明:替代量x≤0.25 mol时,样品为单一的α-BZN相.随着Ca2+替代量增加,样品最佳烧结温度从1000℃升高到1020℃;致密度从7.011 g/cm3减小到6.353 g/cm3;样品晶粒尺寸、晶格常数、电阻率均减小;结晶化学参数键价和,AV(O’)[Bi4]、AV(O’)[Bi3Zn]、AV(O’)[Bi2Zn2]和AV(O’)[Ca3Zn]均增大,且该行为与其晶格常数、介电性能变化相吻合.     

La掺杂对(Bi1.5Zn0.5)(Ti1.5Nb0.5)O7陶瓷组织和介电性能的影响

研究了La3+取代的(Bi1.5Zn0.5)(Ti1.5Nb0.5)O7基陶瓷(Bi1.5-xLaxZn0.5)(Ti1.5Nb0.5)O7(0.0≤x≤1 2,BLZNT)的结构与介电性能。采用传统的固相反应法制备了陶瓷样品,用XRD、SEM分析了样品的组织。在整个取代范围内,La3+取代的样品基本保持单一烧绿石相,稳定范围由容忍因子(RA/RB值)来确定;同时,随着La3+取代量的增加,晶胞常数先增后减。介电性能随结构变化而变化,其中介电性能为:ε=130～170,tanδ=～0.9×10-3(1MHz),并且掺杂La优化了BLZNT x样品高频端(>100kHz)的频谱特性。     

Al2O3掺杂对Ba4Sm9.33Ti18O54陶瓷显微结构和介电性能的影响

采用固相反应法制备了Ba4Sm9.33Ti18O54(简称BST)xwt%Al2O3(x=0~1.5)微波介质陶瓷.研究了掺杂Al2O3对BST陶瓷的显微结构和介电性能的影响.扫描电镜和能谱分析结果显示:未掺杂的BST陶瓷中有少量Sm2Ti2O7相,随着增加Al2O3掺入量,Sm2Ti2O7相消失,BST陶瓷中先后产生了BaTi4O9(x≥0.6)和BaAl2Ti5O14(x≥1.0)两种新相.介电性能测试结果表明Sm2Ti2O7相的消失以及少量BaTi4O9相的形成,能显著提高BST陶瓷的Qf值,但会降低陶瓷的介电常数.当Al2O3的掺入量从0.6wt%增加到1.0wt%时,BaTi4O9相的量逐渐增加,引起BST陶瓷的Qf值略微下降.BaAl2Ti5O14相的产生会同时降低BST陶瓷的介电常数和Qf值.掺入0.6wt%Al2O3的BST陶瓷在1340℃烧结3 h后具有最佳的介电性能:εr=74.7,Qf=10980 GHz,τf=–11.8×10-6/℃.     

PMN基复相弛豫铁电陶瓷电致应变及其温度稳定性的研究

用熔盐法制备的不同居里温度的Pb(Mg1/3Nb2/3)O3基陶瓷预烧粉体和烧结粉体为初始高、低温组元,采用混合烧结法制备出PMN基弛豫铁电复相陶瓷,研究了PMN基复相陶瓷的介电性能和电致伸缩性能及其温度稳定性.结果表明:采用烧结粉体制得的复相陶瓷不仅具有较大的介电常数(室温介电常数为8368)和电致应变2.8×10-4,而且在-10～ 70℃范围内温度稳定性也较好.     

Nb或La掺杂的Ba(Ti0.9Sn0.1)O3基陶瓷的介电性能

研究了掺杂Nb2O5或La2O3的Ba(Ti0.9Sn0.1)O3基陶瓷的介电性能.结果表明掺入0.5%(摩尔比)Nb或La后Ba(Ti0.9Sn0.1)O3基陶瓷的居里温度向低温方向明显移动,而且介电常数显著增大,室温介电常数达30000,峰值介电常数达35000左右,同时介电损耗也明显增加.     

CeO2掺杂的SrTiO3陶瓷的介电性质

SrTiO_3陶瓷是一种具有多功能特性的介质材料:用CeO_2掺杂改性的SrTiO_3陶瓷,可以提高其介电常数和降低介质损耗,对其介电温度特性和介电频率特性也有明显的改善。本文主要报道CeO_2对SrTiO_8陶瓷介电性质的影响。     

Phase evolution and microwave dielectric characteristics of Ti-substituted Mg2SiO4 forsterite ceramics

In the present paper, the phase evolution and microstructures of Ti-substituted Mg₂SiO₄ forsterite ceramics with nominal composition Mg₂(Si_1 − xTi_x)O₄ were investigated together with their microwave dielectric characteristics. MgSiO₃ secondary phase was observed in Mg₂SiO₄ ceramics, and it could be suppressed by Ti-substitution. However, Mg₂TiO₄ and MgTi₂O₅ appeared gradually with increasing Ti-substitution amount. The dielectric constant slightly increased from 6.8 to 8.1 with Ti-substitution, and the Qf value was improved significantly and reached the maximum at x = 0.1 where the optimum combination of microwave dielectric characteristics were achieved: ε_r = 7.4, Qf = 73,760 GHz at 15 GHz, τ_f = − 60 ppm/°C.     

Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-metal diodes

Planar asymmetric Ni-NiO-Cr/Au thin film Metal-Insulator-Metal (MIM) tunnel diodes were fabricated for use in an ultra-sensitive infrared detector operating at room temperature. MIM diodes with contact areas of 100 μm² and 1 μm² were fabricated using standard Micro-Electro Mechanical Systems techniques. A linear relationship between the thickness of reactively sputtered Nickel Oxide (NiO) and the breakdown voltage was experimentally determined, and the diode performance was verified using a theoretical approach. Current-Voltage measurements of the MIM diode revealed an increase in the current from 1.5 nA to 0.8 mA, when the thickness of the dielectric and the contact area of the detector decreased. Also, the rectification ratios of the detectors were determined, exhibiting an asymmetry of 4.5 at 1 V and 6 at 0.2 V for detectors A and B, respectively. Further, the ratio was observed to be increasing with bias voltage suggesting a strong asymmetric behavior. The results are in agreement with the theoretical predictions confirming conduction via tunneling. The nonlinearity and asymmetry exhibited by these diodes suggests their viability in infrared applications.     

Dielectric properties and relaxation of Bi<Subscript>0·5</Subscript>Na<Subscript>0·5</Subscript>TiO<Subscript>3</Subscript>-BaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> lead-free ceramics

A new member of lead-free piezoelectric ceramics of the BNT-based group, (1 − x)Bi_0·5Na_0·5TiO_3−x BaNb₂O₆, was prepared by conventional solid state reaction and its dielectric properties and relaxation was investigated. X-ray diffraction showed that BaNb2O6 diffused into the lattice of Bi_0·5Na_0·5TiO₃ to form a solid solution with perovskite-type structure. A diffuse character was proved by the linear fitting of the modified Curie-Weiss law. The temperature dependence of dielectric constant at different frequencies revealed that the solid solution exhibited relaxor characteristics different from classic relaxor ferroelectrics. The samples with x = 0·002 and 0·006 exhibited obvious relaxor characteristics near the low temperature dielectric abnormal peak, T _f, and the samples with x = 0·010 and 0·014 exhibited obvious relaxor characteristics between room temperature and T _f. The mechanism of relaxor behaviour was also discussed according to the macro-domain to micro-domain transition theory.     

微波对褐煤介电特性及干燥的影响

为研究微波干燥褐煤的可行性,选取云南昭通褐煤进行试验研究,采用微波介电特性变温测试系统研究褐煤介电特性及微波穿透深度随表观密度的变化。结果表明,褐煤介电特性与表观密度成正相关,穿透深度与表观密度成负相关,同时拟合得到褐煤表观密度与介电特性、微波穿透深度的关系式。采用微波干燥系统对不同功率和质量下的褐煤升温特性进行研究。结果表明,微波可以在1min内将褐煤升温至100℃,最大干燥速率为0.198(g/g db)·min-1,微波加热过程中,温度变化表现出3个阶段:快速升温阶段、恒温阶段、减速升温阶段。褐煤升温至100℃前,物料的质量和功率对升温速率影响不大,100℃之后,褐煤的升温速率随着功率的增加而增大,随物料质量增加而减小;通过微波干燥与常规干燥对比,发现当褐煤完全干燥时,微波干燥用时17min,常规干燥用时320min,微波干燥明显优于常规干燥。     

反应溅射SiO_xN_y栅介质薄膜的成分及C-V特性研究

在前期工作基础上,研究了不同反应气体组合条件下SiQxNy栅介质薄膜的反应溅射制备.反应气体的不同组合首先导致薄膜氮氧比以及沉积速率的不同,并进一步导致薄膜电学性能的差异.对薄膜电容-电压特性的分析表明,沉积速率降低会使薄膜体缺陷密度减小,而氮含量的减少则有助于提高薄膜界面质量.最终结果显示,采用合适的反应气体组合(QN2=1.0sccm,Qo2=1.0sccm)制得的SiOxNy薄膜具有较低的体缺陷密度和较好的界面质量,适合于MOS栅介质领域的应用.     

Study of the characteristics of the soil of Chhattisgarh at X-band frequency

The real and imaginary parts (ε₁ and ε₂) of the complex dielectric constant (ε) of sand, silt and clay with varied moisture content have been determined experimentally under laboratory conditions at 9·967 GHz. using infinite sample method. The values of (ε₁) and (ε₂) first increase slowly with moisture content upto a certain transition point and then increase rapidly with moisture content     

高介电陶瓷材料在油品介电精制方法中的应用

目前对于介电材料的研究与应用一般集中于电子产品及其相关领域，高介电陶瓷材料应用于油品精制领域还是一个新的尝试。首先简要介绍了介电力学精制工艺装置，并重点讨论了介电陶瓷在其中的应用及基本原理，最后选用几种不同介电常数的介电陶瓷材料在装置中进行了实验，实验证明，高介电陶瓷材料对油品有较好的精制效果，并且对于所选用的几种介电材料而言随着介电常数的增加精制效果也提高。     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。     

钇掺杂改性PbTiO3纳米陶瓷介电特性及复阻抗研究*

报道了sol-gel技术制备Pb1-x YxTiO3纳米陶瓷(x=0.1%,0.2%,0.4%,0.8%,1.2%,1.6%).试样采用介电分析仪测试.结果发现,当钇掺杂量高于0.4%时,可以烧结得到致密陶瓷片,不同掺杂量的PbTiO3在居里温度区域都出现电容量激增现象.在该区域介电损耗(tgδ)出现突变峰,峰高依次为0.8%,0.4%,1.2%,居里点以下,tgδ大小顺序为0.4%＞0.8%＞1.2%.陶瓷复阻抗虚部随温度升高而降低,实部几乎不随温度变化.且居里点以上,实部和虚部复阻抗趋同.